| HS Code | 806068 |
| Product Name | Photoresist Thinner Jingrui Electric Material |
| Chemical Composition | Mixture of propylene glycol monomethyl ether acetate and other organic solvents |
| Appearance | Clear transparent liquid |
| Color | Water-white |
| Density | 0.98 g/cm³ at 20°C |
| Viscosity | 1.5 mPa·s at 25°C |
| Boiling Point | 150°C |
| Flash Point | 45°C |
| Evaporation Rate | 0.2 relative to butyl acetate |
| Purity | ≥99.5% |
| Water Content | ≤0.05% |
| Metal Ion Content | ≤1 ppb per metal element |
| Particle Count | ≤10 particles/mL for particles ≥0.5 μm |
| Solubility | Miscible with common photoresist solvents; practically insoluble in water |
As an accredited Photoresist Thinner Jingrui Electric Material factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | One gallon HDPE bottle, safety-capped and labeled, contains Photoresist Thinner Jingrui Electric Material. |
| Container Loading (20′ FCL) | 20′ FCL container loading for Photoresist Thinner (Jingrui Electric Material) ensures secure, safe transport in approved drums or IBCs. |
| Shipping | Ship as UN1993, Flammable Liquid, n.o.s. (photoresist thinner), Class 3, Packing Group II. Use approved containers with flammable/combustible labels. Keep away from heat and oxidizers. Ground containers during transfer. Comply with IATA/IMDG/ADR regulations. Avoid spills; provide ventilation and secondary containment. |
| Storage | Store Photoresist Thinner (Jingrui Electric Material) in a cool, dry, well-ventilated area away from heat, sparks, and open flames. Keep the container tightly sealed when not in use, and isolate from oxidizers and acids. Use proper grounding and bonding, and follow local regulations for flammable liquid storage. |
| Shelf Life | The shelf life of Photoresist Thinner Jingrui Electric Material is typically 12 months when stored unopened in original, sealed containers. |
On a 300 mm track coater used for 248 nm and 193 nm photoresist coating, the Jingrui Electric Material thinner is metered into the resist supply line between the temperature-controlled resist handler and the dispense pump. The target is to reduce batch-to-batch viscosity drift before spin coating. For a chemically amplified KrF resist with an incoming kinematic viscosity of 5.4 mm²/s at 23.0 °C, a 13–17 wt% addition of thinner lowers the viscosity to 1.6–2.2 mm²/s measured by capillary viscometer according to ASTM D445-21. The dilution vessel is maintained under nitrogen at 20–25 kPa positive pressure, and the mixture is passed through a 0.05 µm PTFE point-of-use filter before reaching the photoresist nozzle. Metallic impurities after dilution are controlled below 5 ppb for sodium, aluminum, iron, copper, and zinc by ICP-MS calibrated to ASTM D5673-16; water uptake is held below 0.05 wt% by Karl Fischer titration according to ASTM D6304-20. Exceeding the water limit causes phase separation and microgel formation in chemically amplified resists, which appears as comet-shaped coating defects at wafer center.
In the same coater pass, edge bead removal uses a separate dispense arm with a 0.3 mm orifice. The thinner is sprayed under low pressure at 1.5–3.0 mL/s while the wafer rotates at 1,200–2,000 rpm. The solvent is directed to an edge exclusion zone of 1.0–1.5 mm. Production-scale defect maps show that nozzle alignment drift of ±0.2 mm increases post-develop residue at the bevel and reduces yield on edge die by 2–4%. Excessive backside rinse flow causes solvent infiltration into the wafer chucks, followed by temperature drop and localized resist thickness increase of 8–15 nm on the next wafer. Flash point of the Jingrui Electric Material thinner is above 45 °C by ASTM D93-20, which allows closed-cup handling in a track coater with local exhaust at 0.5–0.8 m/s face velocity. The end products are advanced logic and DRAM devices with minimum half-pitch down to 38 nm for 193 nm immersion lithography.
| Downstream segment | Typical thinning addition | Target kinematic viscosity at 23 °C | Primary function | Process limit |
|---|---|---|---|---|
| Semiconductor track coater | 13–17 wt% | 1.6–2.2 mm²/s | Viscosity correction, edge bead removal | Water above 0.05 wt% causes phase separation |
| Gen 8.5 TFT array edge rinse | Not used for bulk dilution | Not applicable | Edge bead removal, coater lip cleaning | Alkali metals above 1 ppb shift IGZO threshold voltage |
| Advanced packaging RDL thick resist | 5–12 wt% | 8–15 mm²/s | Striation suppression, EBR, rework | Solvent evaporation above 0.35 mg/cm²·s creates corona striations |
| MEMS SU-8 formulation | 10–25 wt% | 250–500 mm²/s | Viscosity reduction, edge bead control | Mixing shear above 200 s⁻¹ traps microbubbles |
| Patterned sapphire substrate etch mask | Edge cleanup only | Not applicable | Post-bake edge bead removal | Active-area solvent wicking changes linewidth by 0.2–0.5 µm |
Defect maps from Gen 8.5 lines show that sodium and potassium contamination from edge rinse solvent residues shifts the threshold voltage of indium gallium zinc oxide thin-film transistors by 0.2–0.8 V when the alkali metal concentration exceeds 10 ppb after evaporation. For IGZO backplanes, the Jingrui Electric Material thinner is specified with total alkali metals below 1 ppb, chloride below 0.5 ppm by ASTM D512-23, and sulfate below 0.5 ppm. The thinner is dispensed through the slit coater edge rinse nozzles at 30–60 mL/min on substrates up to 2,200 mm × 2,500 mm. It removes photoresist from the coater lip, substrate edge, and drain lines without attacking the molybdenum/aluminum/molybdenum gate stack. The substrate temperature is maintained at 23 ± 1 °C and relative humidity at 45–55%; lower humidity accelerates edge drying and produces a photo spacer height deviation of ±0.15 µm after full-field exposure. End products are TFT arrays with channel length 3–4 µm for LCD and OLED backplanes.
The relative evaporation rate is typically 0.3–0.5 against n-butyl acetate at 25 °C. This property is matched to the main PGMEA vehicle so that edge bead viscosity does not increase before the rinse nozzle reaches the substrate corner. If a butyl acetate-rich substitute is used without re-qualifying the edge rinse timing, corner buildup on large glass plates becomes visible after develop as a ridge of 40–70 nm. The thinner is not used for bulk dilution at Gen 8.5 because slit coater film thickness is controlled by pump speed, shim gap, and meniscus geometry. The product is filtered at 0.02 µm or smaller in the chemical distribution line to prevent particle contamination on the coater lip. For EU market compliance, the thinner is evaluated under REACH Regulation (EC) No 1907/2006, Annex II safety data sheet requirements. Published data for this specific configuration is limited; the above limits are derived from production-scale trend monitoring rather than a single public standard.
| Parameter | Test method | Control limit | Relevant downstream segment |
|---|---|---|---|
| Water content | ASTM D6304-20 | <0.05 wt% | Semiconductor, MEMS |
| Chloride | ASTM D512-23 | <0.5 ppm | Display TFT, advanced packaging |
| Flash point | ASTM D93-20 | >45 °C | Track coater, spray coater |
| Alkali metals | ASTM D5673-16 | <1–5 ppb | IGZO display, semiconductor |
| Filtration compatibility | ISO 16889:2016 multipass test | β₅(c) ≥ 1000 for 0.05 µm filters | Semiconductor, display |
For redistribution layer processing on 300 mm wafers with electroplated copper traces, the resist film must cover topography of 5–8 µm before exposure. The Jingrui Electric Material thinner is added at 5–12 wt% to reduce spin-coat striations and to extend bath life in an automated spin bowl. The diluted resist is dispensed through a 2.0 mm suck-back-free nozzle at 0.8–1.2 mL/s; final spin speed is 2,200–3,000 rpm for 90 s. A coating defect known as corona striation appears when solvent evaporation exceeds 0.35 mg/cm²·s at 23 °C; the PGMEA-rich profile of the thinner suppresses this by maintaining a solvent-rich boundary layer for the first 3–5 s of spin-off. The target film thickness after softbake is 6–10 µm, with uniformity of ±2.5% across the wafer.
Backside and edge bead removal for thick film uses a double-dispense configuration: a top edge nozzle located 0.5 mm from the wafer bevel and a backside rinse nozzle are triggered at 800–1,200 rpm. On a SUSS AltaSpray or EVG spray coater, the EBR flow rate is 4–6 mL/min, and the solvent edge cut width is held at 1.5–2.0 mm. After electroplating, the thinner removes residual resist from copper pillar sidewalls before reflow. Direct immersion of wafer cassettes for longer than 30 min is not recommended because dissolved novolac resin raises solvent viscosity and leaves a thin film on cassette surfaces; a separate isopropanol rinse is then required. The end products are flip-chip chip-scale packages, fan-out wafer-level packages, and 2.5D interposers with 10–40 µm pitch copper pillars.
A 20 µm thick SU-8 film spun at 400 rpm may produce edge beads of 80–120 µm; the Jingrui Electric Material thinner is used to reduce formulation viscosity before spin coating and to adjust edge bead removal. The thinning response is non-linear. At 10 wt% addition, film thickness decreases by 15–20% at constant spin speed; at 25 wt% addition, thickness decreases by 35–45% and the post-lithography sidewall angle changes from 88° to 82°. This property cliff requires gravimetric metering accurate to ±0.5 wt%. The solvent is dispensed through a 0.1 µm filter to prevent particle-induced pinholes in the thick film. Water content above 0.05 wt% causes residual layer clouding after post-exposure bake because the photoacid generator is quenched by absorbed moisture. At relative humidity above 60%, SU-8 coatings require pre-drying of the wafer before dispense.
Production-scale failure modes include bubble entrapment when thinner is mixed at high shear. The mixing protocol uses a planetary mixer at 15–20 rpm for 20 min, followed by vacuum degassing at −0.08 MPa for 30 min. If shear rate exceeds 200 s⁻¹ during mixing, nitrogen microbubbles remain in the high-viscosity film and produce post-develop voids of 3–10 µm diameter. The flash point of the thinner allows soft bake at 65 °C and 95 °C, but the ramp rate from 20 °C to 65 °C must not exceed 3 °C/min to avoid skinning and solvent boil. The thinner should not be combined with amine-containing adhesion promoters in this process because residual amine quenches the photoacid generator and produces footed sidewalls. End products include microfluidic stamp molds, inkjet nozzle plates, and MEMS sacrificial structures with aspect ratios above 5:1.
Patterned sapphire substrate etch-mask processing uses a thick positive resist that must survive chlorine-based dry etching but release cleanly after the etch. The Jingrui Electric Material thinner is applied as a post-bake edge bead remover on 2-inch and 4-inch sapphire wafers. Edge bead width is controlled to 0.5 mm because larger edge exclusion zones reduce usable patterned area. The solvent is dispensed at 0.3 mL/min through a needle nozzle while the wafer rotates at 150–300 rpm. If the solvent wicks into the active area, the resist linewidth changes by 0.2–0.5 µm after develop. The subsequent inductively coupled plasma etch uses Cl₂/BCl₃/Ar chemistry at 0.8–1.5 Pa; resist residues from incomplete edge bead removal cause micro-masking and cone defects on the sapphire surface. After ICP etch, the crosslinked resist shell is removed with hot N-methylpyrrolidone or a dedicated stripper blend; the Jingrui thinner is not recommended as sole stripper for post-etch crust, but is used for final edge cleanup after strip. The resulting LED chip has a cone pitch of 3 µm and a cone height of 1.5–1.8 µm on the sapphire exit face.
Electrostatic discharge during mask cleaning is a contamination risk when low-humidity air flows across quartz blanks. The Jingrui Electric Material thinner is used in final cleaning of the resist edge on 152 mm square photomask blanks and for pellicle frame cleaning before mounting. The dispense uses a PTFE-compatible valve at 0.2 mL/min and a 0.05 µm filter, because chromium hard mask etch lines are sensitive to alkaline residues. The solvent is selected to leave organic residue below 0.2 ng/cm² by TOF-SIMS after drying. Exposure tools operating at 193 nm will print edge haze if organic residue from an improperly filtered thinner accumulates on the backside pellicle surface. End products are 152 mm photomasks or EUV pellicle assemblies with critical dimension uniformity of ±2.5 nm.
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The Jingrui Electric Material photoresist thinner is an electronic-grade solvent blend for viscosity adjustment of photoresist systems, edge-bead removal, coater-cup cleaning, and dispense-nozzle rinsing on wafer track systems. The product family is assigned model suffixes according to solvent base: PGMEA-dominant, PGME/PGMEA mixed, and ethyl lactate-compatible grades. Exact model code should be selected from the lot-specific certificate of analysis, because public compilation of every suffix is limited. Each release lot is controlled against a certificate of analysis that includes water content by ASTM E203-16, color by ASTM D1209-05, density by ASTM D4052-18, and kinematic viscosity by ASTM D445-19a. The material is intended for point-of-use filtration through 0.1 µm or finer high-purity fluoropolymer membrane cartridges before delivery to the coater reservoir.
The primary distinction is not solvency but trace-contaminant control. General-purpose PGMEA may contain metal residues above 100 ppb, water above 0.1 wt%, and particles larger than 0.5 µm at counts exceeding 500 counts/mL. Such burdens produce cone defects, satellite droplets, and post-develop residue in advanced resist systems. The Jingrui Electric Material photoresist thinner is specified to reduce alkali and transition metals to below 10 ppb per element when measured by inductively coupled plasma mass spectrometry after closed-vessel acid digestion. Sodium, potassium, calcium, iron, chromium, nickel, copper, zinc, aluminum, and lead are the elements most often limited. Water is controlled to ≤0.05 wt% because water alters dissolution kinetics and can cause photoactive compound crystallization in DNQ-novolac resists. The solvent cut is narrowed to a boiling range of 144–147 °C at 101.3 kPa for PGMEA-dominant grades; this is narrower than industrial PGMEA, which may span 140–155 °C. A broader cut introduces mid-spin evaporation drift, causing film-thickness nonuniformity on 300 mm wafers.
Batch-to-batch variation in industrial PGMEA is a known source of spin-coating drift. Because photoresist thickness in the spin-coating regime scales inversely with the square root of spin speed, a change in solvent viscosity from 1.0 mm²/s to 1.2 mm²/s can require a spin-speed adjustment of 50–100 rpm to hold film thickness within a ±5 nm window. The Jingrui Electric Material product is controlled for viscosity and solvent composition so that the lot-to-lot spin-speed offset is minimized. This reduces re-qualification of spin curves after each shipment. The product also excludes amine-based pH adjusters; amine additives are avoided to prevent dark erosion in chemically amplified resists.
On production coaters with cup exhaust face velocity of 0.4–0.6 m/s, higher-boiling fractions in industrial PGMEA leave a heavier edge bead because of lower evaporation during the ramp phase. The Jingrui Electric Material photoresist thinner is used to reduce an as-supplied resist kinematic viscosity from 10.5–14.0 mm²/s to a target coating viscosity of 6.5–8.5 mm²/s at an addition of 10–20 % w/w. The addition ratio is confirmed by spin-curve generation on the actual wafer substrate, because surface reflectivity, topography, and bottom anti-reflective coating stack change the film-thickness response. The thinner is also used in the nozzle pre-wet cycle at 0.5–1.5 mL per dispense to prevent dried resist from adhering to the needle seat. Low nonvolatile residue is required; residue after evaporation at 110 °C for 30 min is controlled to ≤5 mg/100 mL.
The PGMEA-dominant grade exhibits a closed-cup flash point of 42 °C by ASTM D93-20, placing it under flammable liquid category 3 of the Globally Harmonized System. Vapor pressure at 20 °C is approximately 3.7 mm Hg (0.49 kPa). The relative evaporation rate against n-butyl acetate is below 0.25 by ASTM D3539-11, which reduces premature drying in the dispense line but still requires local exhaust ventilation. In coater enclosures, the lower explosive limit of the PGMEA-dominant grade is approximately 1.3 % v/v; maintain headspace concentration below 10 % of the LEL under normal operation. The ethyl lactate-compatible grade has a higher flash point, generally above 46 °C; however, published data for the Jingrui Electric Material ethyl lactate blend are limited, and confirmation from the lot safety data sheet is required.
In spray-puddle and dynamic dispense sequences, evaporation of the thinner during wafer acceleration is governed by air-flow pattern and substrate temperature. At a typical coater exhaust of 0.5 m/s and a wafer surface temperature of 21–23 °C, PGMEA-based thinner film on the wafer edge can dry within 0.5–1.0 s. This fast drying assists edge-bead removal but increases the risk of redeposited resist particles if the coater bowl is not rinsed. Therefore the product is used as a bowl-cleaning solvent at the end of each lot; its low residue and low metal profile allow the same solvent to perform dilution, edge-bead removal, and line cleaning without cross-contaminating subsequent layers. The user must verify that the coater exhaust design maintains a face velocity above 0.3 m/s at the cup and that the solvent waste line is grounded, because static discharge in low-conductivity solvents can create ignition sources.
On a wafer track configured with a positive-tone 193 nm resist with an as-supplied polymer solids content of 9.5–11.0 wt%, the thinner is introduced at 3–5 wt% to adjust spin-speed windows without changing the resin molecular weight distribution. Addition is performed in an ultraclean inert atmosphere with ≤10 ppm oxygen and ≤10 ppm water vapor. The blend is homogenized by low-shear rolling for 12–24 h, not by high-shear mixing, because high-shear can generate microbubbles and increase particle counts in the sub-0.1 µm range. Filtration through 0.05 µm polypropylene or high-density polyethylene membranes is common before filling. The use of stainless steel or nickel-alloy wetted surfaces is avoided in some lines because trace iron, chromium, and nickel can be mobilized by photoacid generator chemistry during post-exposure bake. Instead, wetted parts are constructed of fluoropolymer, high-density polyethylene, or fused silica. For older 365 nm i-line resists, the same thinner can be used at a lower addition of 2–5 wt%; process windows should nevertheless be re-established on the actual track because i-line resist film thickness is highly sensitive to solvent composition.
The product is characterized for trace metal burdens by inductively coupled plasma mass spectrometry after closed-vessel acid evaporation. The detection limit for each element should be ≤5 ppb; a release lot typically reports Na, K, Ca, Fe, Cr, Ni, Cu, Zn, Al, and Pb at or below 10 ppb. For ion-sensitive applications such as deep-ultraviolet resists, a total metal budget of 25 ppb across these elements is often imposed. Particle counts are measured by laser particle counting in a batch of 100 mL, with the particle size threshold at 0.5 µm. Electronic-grade materials typically report ≤50 counts/mL at this threshold, and point-of-use filtration can reduce counts to below 5 counts/mL. The container closure system is also critical: high-density polyethylene or fluoropolymer containers are required because glass bottles can release sodium, boron, and aluminum into solvent over extended storage. At 25 °C in closed containers, the product is stable for 12 months from date of manufacture when moisture ingress is prevented; the user should re-qualify after 9 months if the container has been opened. Because ASTM D5673-16 is written for aqueous matrices, solvent-based samples are evaporated to near dryness and reconstituted in dilute nitric acid before analysis; this method modification should be validated by spike recovery in the range of 80–120 % for each analyte.
Filtration housing design also affects downstream metal and particle levels. Point-of-use filters are often 0.05 µm UPE or PTFE membranes in all-fluoropolymer capsules. A pre-wet step with 2–5 L of thinner is used to remove extractables from the filter. The first 5 % of the thinner dispensed after filter change is diverted to waste to reduce filter leachables such as particulates and wetting agents. This procedure is common in fabs running 300 mm wafers. Elastomer compatibility should be confirmed for all dispense line seals; EPDM, fluoroelastomer, and PTFE-encapsulated O-rings are generally compatible with PGMEA, while nitrile and polyurethane are not recommended because they swell and release plasticizer. Diaphragm pumps with PTFE or ETFE wetted parts or bellows pumps are used; magnetically driven gear pumps can generate metal fines if the internals are not ceramic or fluoropolymer-coated.
| Property | Test method | Control window |
|---|---|---|
| Water | ASTM E203-16 | ≤0.05 wt% |
| Color | ASTM D1209-05 | ≤10 APHA |
| Density at 20 °C | ASTM D4052-18 | 0.965–0.970 g/cm³ |
| Kinematic viscosity at 25 °C | ASTM D445-19a | 1.0–1.5 mm²/s |
| Purity by GC | ASTM D3328 | ≥99.0 % area |
| Distillation range | ASTM D1078 | 144–147 °C |
| Flash point, PMCC | ASTM D93-20 | 42 °C |
| Residue on evaporation | Internal gravimetric method, 110 °C / 30 min | ≤5 mg/100 mL |
| Particle count, ≥0.5 µm | Laser particle counter, 100 mL batch | ≤50 counts/mL |
| Total critical metals | ICP-MS after acid evaporation | ≤10 ppb per element |
Compared with a generic industrial PGMEA thinner, the Jingrui Electric Material photoresist thinner differs in the control of water, distillation range, metal burden, and particle load. These differences are not cosmetic; they determine whether the same solvent can be used for both resist dilution and final device fabrication without leaving ionic residues.
| Process variable | Industrial PGMEA | Electronic-grade thinner | Jingrui Electric Material photoresist thinner |
|---|---|---|---|
| Water | ≤0.10 wt% | ≤0.05 wt% | ≤0.05 wt% |
| Distillation range | 140–155 °C | 143–148 °C | 144–147 °C |
| Metals per element | Often 100–500 ppb | ≤10 ppb | ≤10 ppb |
| Particle count ≥0.5 µm | Not guaranteed | ≤100 counts/mL | ≤50 counts/mL |
| Residue on evaporation | ≤10 mg/100 mL | ≤5 mg/100 mL | ≤5 mg/100 mL |
| Primary use | Industrial degreasing, non-critical thinning | General lithography support | Semiconductor and display lithography support |
General-purpose thinners formulated with cyclohexanone, acetone, or low-cost aromatic hydrocarbons are not directly interchangeable with the Jingrui Electric Material photoresist thinner. Cyclohexanone may attack plastic dispense-tip seals and can generate haze in positive-tone resists if oxidation products accumulate. Acetone has a flash point below -20 °C and evaporates too quickly for stable spin curves. Aromatic hydrocarbons alter dissolution selectivity and are not compatible with many fine-line resist systems. The ester and ether-ester solvent bases of the Jingrui Electric Material thinner are intended for compatibility with DNQ-novolac, polyhydroxystyrene, and many polymethacrylate resist platforms; compatibility with specific 193 nm immersion formulations must nevertheless be verified by topcoat adhesion testing and post-develop defect inspection. Storage above 25 °C or repeated nitrogen pressure transfers may deplete light ends and shift the flash point. For stability-sensitive applications, the thinner should be re-assayed after 6 months in opened containers. Avoid combination with amine-containing additives, because amines accelerate decomposition of DNQ photoactive compounds and can shift dark erosion in unexposed resist.
