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Photoresist Stripper

    • Product Name: Photoresist Stripper
    • Factroy Site: Yudu County, Ganzhou, Jiangxi, China
    • Price Inquiry: admin@ascent-chem.com
    • Manufacturer: Ascent Petrochem Holdings Co., Limited
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    Specifications
    HS Code 824791
    Product Name Photoresist Stripper
    Chemical Family Organic solvent blend / alkaline
    Appearance Clear colorless to pale yellow liquid
    Active Ingredients Dimethyl sulfoxide (DMSO), N-methyl-2-pyrrolidone (NMP), or substituted amine
    Ph Alkaline (typically 9-13)
    Specific Gravity 1.00 - 1.15 at 25°C
    Flash Point >90°C (closed cup) depending on formulation
    Solubility Miscible with water and most organic solvents
    Boiling Point 150°C - 200°C
    Storage Temperature 15°C - 35°C
    Shelf Life 12 months from manufacture date in sealed container
    Application Removes positive and negative photoresist from semiconductor substrates
    Compatibility Compatible with silicon, silicon dioxide, silicon nitride, and most metals
    Hazard Classification Irritant; may cause skin/eye irritation; keep away from open flame

    As an accredited Photoresist Stripper factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.

    Packing & Storage
    Packing Photoresist Stripper, 1 gallon (3.78 L), in a sealed HDPE bottle with hazard labeling and tamper-evident closure.
    Container Loading (20′ FCL) 20′ FCL container loaded with photoresist stripper, securely packed, labeled, and ventilated for safe chemical transport.
    Shipping Photoresist stripper ships as a hazardous liquid requiring UN-approved packaging, flammable/corrosive labeling, and transport documentation in accordance with IATA, IMDG, or ADR regulations. Keep containers sealed and upright, segregated from oxidizers. Supply an SDS and emergency response information. Handle using impervious gloves, splash goggles, and appropriate ventilation.
    Storage Store photoresist stripper in tightly sealed, original containers in a cool, dry, well-ventilated area. Keep away from heat, sparks, open flames, and incompatible materials like strong oxidizers. Use approved flammable storage cabinets and secondary containment. Ensure containers are labeled, inspected regularly, and access is restricted to trained personnel only.
    Shelf Life Photoresist stripper typically has a 12-month shelf life when stored tightly sealed at 15–25°C, away from light and moisture.
    Application of Photoresist Stripper

    When Post-Etch Residue Reduces Yield in 28 nm-Class Damascene Interconnects

    In back-end-of-line processing of logic devices with 28 nm critical dimensions, resist stripping after via and trench plasma etching is not a bulk dissolution step; it must remove fluoropolymer sidewall residues, organometallic etch by-products associated with TiN hardmask and copper cap layers, and cross-linked 193 nm photoresist without raising porous low-k dielectric k-value or oxidizing exposed Cu. The wet chemical preparation is an inhibited amine-solvent system, typically applied neat or diluted with ultrapure water at 1:1 to 1:4 by volume. Bath temperature in single-wafer spray processors is maintained at 45 °C to 70 °C, with dispense rate 0.8–2.0 L/min and nitrogen-sparged chemical delivery to limit dissolved oxygen below 50 ppb. The sequence includes DI water pre-wet at 25 °C, stripper dispense, megasonic agitation at 0.8–1.2 MHz, hot ultrapure water rinse at 50 °C, and isopropyl alcohol vapor drying. Compliance screening for this chemistry includes REACH Regulation (EC) No 1907/2006 Annex XVII restrictions on NMP-containing formulations, RoHS Directive 2011/65/EU Annex II, SEMI S2-0812 equipment safety evaluation, and ISO 14644-1:2015 cleanroom compatibility. Downstream terminal products are advanced logic SoCs, DRAM/NAND memory die, and high-performance computing processors. The critical boundary is copper oxide growth above 2 nm on exposed Cu after 10 min bath exposure; this is monitored by XPS oxide thickness and controlled by acetylenic corrosion inhibitors in the formulation. Published data for bath-life extension beyond 24 h with dissolved copper loads above 500 ppm is limited, requiring inline metal titration and pH set-point narrowing.

    Aqueous Alkaline Dry-Film Stripping in High-Density Interconnect PCB Production

    After alkaline etching of copper foil, negative-tone dry film resist is removed in conveyorised spray equipment with an aqueous alkaline stripper. The working bath is prepared at 3–5 wt% sodium hydroxide or 5–10 vol% proprietary alkanolamine concentrate in deionised water; pH is held between 12.5 and 13.5. Spray chamber temperature is kept at 45–55 °C, spray pressure 1.5–3.0 kg/cm², and dwell time 30–60 s. The process sequence includes spray flood, recirculated stripper, two-stage countercurrent rinse, and sulfuric acid neutralisation. Compliance is anchored to IPC-A-600H Class 2/Class 3 for acceptable copper conductor condition, IPC-6012E for rigid PCB performance, and RoHS Directive 2011/65/EU for lead-free surface finishes. Terminal products include multi-layer server boards, automotive ECU substrates, and HDI smartphone mainboards. Operational boundary: cupric chloride contamination above 800 ppm slows film break-up; copper etch rate must remain below 0.1 µm/min to avoid undercutting 50 µm lines.

    In TFT-LCD array fabrication, positive-tone novolak resist is stripped after wet-etch patterning of molybdenum/aluminium/molybdenum gate and source-drain stacks. The stripper is an amine-solvent formulation based on monoethanolamine and dimethyl sulfoxide with added glycol ether and corrosion inhibitor, used at 20–40 vol% dilution in co-solvent or as a ready-to-use bath at 40–60 °C. Ultrapure water rinsing follows in a counterflow cascade with resistivity monitoring above 18 MΩ·cm. When dry etchers carbonise the resist surface, an oxygen plasma descum is inserted before wet stripping to avoid particle redeposition. Compliance is maintained under RoHS Directive 2011/65/EU, REACH Regulation (EC) No 1907/2006, and ISO 14644-1:2015 Class 4 cleanroom protocols for array lithography. Downstream products include fringe-field switching LCD television panels, OLED smartphone displays, and automotive instrument clusters. The process boundary is aluminium attack: stripper pH must remain below 10.5, and dissolved molybdenum accumulation must not exceed 50 ppm, otherwise galvanic corrosion at molybdenum/aluminium interfaces creates line-open defects.

    What Limits Thick-Film Removal from Copper Pillar Redistribution Layers?

    Thick negative-tone photoresist films of 50–120 µm are used for copper pillar electroplating and redistribution layer patterning in wafer-level packaging. After electroplating, the resist is heavily cross-linked and mechanically anchored to rough copper seed layers. Removal is performed in immersion or spray tools with an inhibited alkaline stripper formulated to suppress copper etching and maintain bath life. Working bath addition ratio ranges from 1:1 to 1:4 concentrate-to-ultrapure-water by volume; process temperature is 60–80 °C; immersion duration 20–40 min; recirculation filtration uses ≤1 µm polypropylene cartridges. The critical limitation is undercut along the Cu pillar base: copper etch rate should not exceed 0.05 µm/min, and bath copper loading should be kept below 1.5 g/L to avoid redeposition. Compliance references include SEMI S2-0812 for equipment EHS, IATF 16949:2016 clause 8.6.1.1 for automotive-grade packaging, and RoHS Directive 2011/65/EU. Terminal product classes are fan-out wafer-level packages, flip-chip ball grid arrays, and wafer-level chip-scale packages used in power management ICs and RF modules.

    Sacrificial photoresist removal in microelectromechanical systems is constrained by aluminium bond pads, piezoelectric lead zirconate titanate films, and released silicon flexures that cannot tolerate aggressive alkaline or fluoride-containing stripper residues. The formulation is an anhydrous DMSO-alkanolamine mixture used neat or diluted 1:1 with co-solvent at 50–70 °C, with ultrasonic agitation in quartz-lined tanks at 40–80 kHz. After stripping, devices receive a two-stage isopropanol rinse and critical-point drying to prevent stiction. Compliance requirements include ISO 13485:2016 for medical MEMS components, REACH Regulation (EC) No 1907/2006 Annex XVII where NMP replacement is mandated, and RoHS Directive 2011/65/EU. Terminal products include inertial measurement units, pressure sensors, and microbolometer arrays. The operational boundary is aluminium etch rate: exposure must remain below 4 nm after 30 min at process temperature; published data for proprietary DMSO-alkanolamine blends on sub-100 nm AlCu metallization is limited, so qualification wafers are used to establish bath life.

    GaN and GaAs Mesa Etch Mask Removal Requires Buffered Solvent Blends Below 70 °C

    Chlorine-based inductively coupled plasma etching of GaN and GaAs mesas leaves a cross-linked photoresist mask and chloride-containing etch residues. The stripper is a buffered solvent-amine blend, prepared as a neat bath or diluted 1:1 with dimethyl sulfoxide, operated at 50–70 °C for 5–20 min in cassette immersion tools with nitrogen bubbling. The pH is buffered below 10.5 to prevent p-GaN surface roughening; free amine concentration is titrated inline and maintained above 5 wt% monoethanolamine equivalent. Compliance anchors include RoHS Directive 2011/65/EU for LED packages and REACH Regulation (EC) No 1907/2006. Terminal products are mini LED backlight units, micro LED display modules, and automotive LED headlamp assemblies. The principal compatibility boundary is ITO transmittance loss: stripper immersion must not reduce 550 nm transmittance by more than 0.3% absolute after 10 min; this is verified by UV-Vis spectrophotometry on witness coupons.

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    Certification & Compliance
    More Introduction

    Designated PRS-3000, the photoresist stripper is a formulated semi-aqueous amine/solvent blend configured for post-etch bulk positive photoresist removal and rework on 200 mm and 300 mm substrates. The product is supplied as a filtrated liquid with a pH of 12.2–13.0 at 25 °C per ASTM E70, kinematic viscosity of 14.0–18.5 mPa·s at 25 °C per ASTM D445, and density of 1.02–1.06 g/cm³ at 20 °C. Principal actives include 30–45 wt% monoethanolamine, 20–30 wt% dimethyl sulfoxide, 1–3 wt% tetramethylammonium hydroxide, and a triazole-based copper corrosion inhibitor in the range 0.5–1.5 wt%; water content is controlled to 5.0–8.0 wt% by ASTM E203 Karl Fischer titration. N-methyl-2-pyrrolidone, catechol, and hydroxylamine are intentionally absent. Catechol is excluded to reduce toxicological burden, while hydroxylamine is excluded to avoid thermally sensitive decomposition behavior at elevated bath temperatures. Lot certification includes inductively coupled plasma mass spectrometry for sodium, potassium, iron, copper, and zinc, with each metal controlled to ≤ 50 ppb and total trace metals ≤ 500 ppb. Particle counts for 0.2 µm diameter are maintained below 100 particles/mL following 0.1 µm point-of-use filtration.

    Immersion processing is typically executed in an automated wet bench with temperature-controlled quartz or PTFE-lined tanks. The bath is maintained at 70–80 °C; immersion duration of 10–20 minutes is adjusted according to resist type, post-exposure bake temperature, and ion implantation dose. For single-wafer spray processors, the fluid is heated to 60–70 °C and dispensed through a fan nozzle at 1.0–1.5 L/min for 90–120 seconds, followed by a deionized water rinse and nitrogen spin-dry. Ultrasonic agitation at 40 kHz in immersion baths reduces residue adhesion for high-dose implant resists, but megasonic energy above 0.5 W/cm² may increase copper surface roughness. In 45 L tanks operated at 80 °C, a recirculation rate of 15–20 L/min through 0.1 µm PTFE filtration is required to maintain temperature uniformity and remove stripped resist debris. The product is compatible with quartz, PTFE, PVDF, and high-density polyethylene wetted components. EPDM and natural rubber seals are incompatible because dimethyl sulfoxide and monoethanolamine cause swelling, particle shedding, and premature seal failure.

    How Does the PRS-3000 Preserve Cu/Low-k Interconnect Integrity During Resist Re-Work?

    The primary risk in post-etch stripping on copper/low-k stacks is galvanic or alkaline attack at the copper/barrier interface when the bath pH exceeds 11.0. The triazole inhibitor chemisorbs on cuprous oxide and, at the low tetramethylammonium hydroxide content of 1–3 wt%, the formulation maintains a copper etch rate below 0.5 nm/min at 75 °C for 30 minutes immersion, as determined by four-point probe sheet resistance conversion. Low-k films with dielectric constant ≤ 2.7 are evaluated for amine-induced silanol formation; the dimethyl sulfoxide co-solvent reduces amine penetration and limits dielectric constant shift to less than 0.1 after 60 minutes exposure on methylsilsesquioxane film, with refractive index monitoring used as a secondary check. Titanium nitride barrier layers show no measurable thickness loss by X-ray fluorescence after 20 minutes at 80 °C. For cobalt liners, the chelating chemistry is intentionally weak; corrosion current density remains below 1.0 µA/cm² in linear polarization resistance tests. Incomplete plasma ash of CF₄-based etch polymers can leave fluorinated residues that require a 90-second intermediate rinse in deionized water at 25–35 °C before stripper exposure. Process engineers should verify post-ash residue composition because fluorine-containing polymer crust can shield the underlying resist and extend effective removal time.

    During production use, bath life is influenced by evaporation, resist loading, and atmospheric carbon dioxide absorption. Monoethanolamine and dimethyl sulfoxide vapor pressures differ substantially; open-tank operation at 80 °C without reflux can reduce dimethyl sulfoxide concentration by 1–2 wt% per 8-hour shift and shift pH upward by 0.3–0.5. A closed-loop recirculation system with a chilled condensing lid is therefore specified. Carbon dioxide absorbed from cleanroom ambient forms monoethanolamine carbamate, which increases haze and may react with dissolved novolac to form insoluble residues. Titration of total alkalinity and specific gravity is used to adjust the bath. Dynamic viscosity increases with resist loading: after processing 25 wafers/L, viscosity at 25 °C rises from 16 mPa·s to 22–25 mPa·s. Above 30 mPa·s, spray atomization efficiency degrades on single-wafer tools, so bath dumping is triggered by viscosity rather than fixed wafer count.

    Thermal Decomposition Proceeds Slowly Below 85 °C

    At bath temperatures above 85 °C, tetramethylammonium hydroxide decomposes via Hofmann elimination to trimethylamine and methanol. The measured decomposition half-life in the formulated blend at 85 °C is 18–24 hours. Released trimethylamine increases pH and amine vapor load, while methanol accumulation reduces the flash point of the bath. At 70–80 °C, the half-life extends beyond 72 hours. This thermal constraint defines the upper processing temperature. In baths operated with compressed dry air agitation rather than nitrogen, carbonate formation from carbon dioxide raises the pH threshold at which silicon nitride etch accelerates. Silicon nitride etch rate at 80 °C has been observed to increase from 0.05 nm/min to 0.12 nm/min after 48 hours of air-sparged aging with 2.5 g/L dissolved resist loading. Published data for this specific configuration is limited. Nitrogen blanketing and continuous filtration through 0.2 µm PTFE cartridges are therefore specified for advanced-node applications. Bath heating should use quartz immersion heaters with a watt density below 1.5 W/cm²; higher heat flux may produce localized boiling at the heater surface and accelerate decomposition of the alkaline developer component.

    When Aluminum Bond Pad Compatibility Dictates Halide-Free Formulation

    Aluminum bond pads in memory and logic devices are sensitive to halogenated residues and alkaline etch. PRS-3000 is formulated without chloride, fluoride, or bromide; ion chromatography on neat product reports chloride and fluoride each below 0.5 ppm, and bromide below 1.0 ppm. The aluminum etch rate at 75 °C is 0.2 nm/min or less, measured by profilometry on Al-0.5% Cu films. By comparison, hydroxylamine-based strippers with chloride additions may remove aluminum at 1–3 nm/min under identical conditions. Applications such as aluminum pad rework after polyimide patterning therefore use PRS-3000 without an intermediate descum step. The product is also compatible with exposed tungsten plugs; tungsten etch rate at 75 °C is below 0.1 nm/min. For gold interconnects, exposure should be limited to 10 minutes because triazole inhibitors can form an organic film that alters wire-bond pull strength. If gold wire-bond strength is critical, an oxygen plasma descum after stripping is recommended.

    Relative to anhydrous NMP or dimethyl sulfoxide-only removers, PRS-3000 provides a wider pH window and faster dissolution of heavily cross-linked resists. Anhydrous formulations rely primarily on solvent swelling and can leave a carbonaceous crust on via sidewalls after 20 minutes at 80 °C. PRS-3000 saponifies ester linkages in diazonaphthoquinone resists and strips ion-implanted positive resist with a 30–40% shorter immersion time in a matched 45 L tank at 75 °C. Compared with hydroxylamine-based chemistries, PRS-3000 sacrifices some removal speed for lower metal attack and improved thermal stability. Hydroxylamine-based products frequently specify a hard ceiling of 70 °C; PRS-3000 can operate at 80 °C for nearly a work shift without exotherm. Compared with sulfuric-peroxide mixtures, PRS-3000 does not require point-of-use mixing, does not release substantial oxygen, and avoids copper passivation issues associated with peroxide decomposition on metal surfaces.

    Comparative bath performance for positive photoresist removal after 20 min immersion at 75 °C
    ParameterPRS-3000Anhydrous NMP/DMSOHydroxylamine-basedSulfuric/peroxide
    pH at 25 °C12.2–13.05.5–7.010.5–12.0<1.0
    Copper etch rate at 75 °C (nm/min)<0.5<0.11.0–2.50.5–1.0
    Aluminum etch rate at 75 °C (nm/min)<0.2<0.11.0–3.0>10
    Silicon nitride etch rate at 75 °C (nm/min)<0.05<0.020.1–0.3>5
    Upper process temperature (°C)808570120
    Observed failure modeResidue if carbonate level exceeds 2 g/LVia sidewall crustMetal attack and thermal exothermSubstrate attack and polymer degradation

    Packaging is available in 5-gallon PTFE-lined steel drums, 20 L high-density polyethylene carboys, and 200 L stainless steel totes with dip-tube assemblies. All containers are nitrogen-purged after filling to a headspace oxygen concentration below 2 vol%. Shelf life at 15–25 °C storage is 12 months from date of manufacture. Storage below 5 °C may cause dimethyl sulfoxide crystallization, and exposure above 40 °C accelerates amine carbonate formation. Before use, the drum must be recirculated for 30 minutes through a 0.1 µm filter to re-disperse any settled inhibitor. Point-of-use filtration is mandatory for advanced-process tools. For 300 mm single-wafer tools, a 0.05 µm PTFE cartridge with 30 nm retention rating is recommended. For batch immersion, 0.1–0.2 µm membranes are sufficient. Filter cartridges should be wet with isopropyl alcohol before installation to avoid air locks. A pressure differential across the filter above 200 kPa indicates gel accumulation from dissolved novolac and should trigger filter replacement.

    Waste Treatment, Safety, and Regulatory Profile

    Spent PRS-3000 is classified as corrosive due to pH above 12.5. The product carries GHS classification for skin corrosion and serious eye damage. Waste streams are typically neutralized with 10% sulfuric acid to pH 6–9 before discharge; neutralization releases heat and may precipitate dissolved novolac resin, so a 2-hour settling step and 0.45 µm bag filtration are required. Wastewater treatment systems must be evaluated for copper removal because dissolved copper concentration in spent baths can reach 5–20 ppm depending on wafer area processed. Chelating agents are weak, so conventional hydroxide precipitation reduces dissolved copper below 0.5 ppm after pH adjustment. The product does not require EUH014 violent reaction with water classification. Under REACH, tetramethylammonium hydroxide is classified as skin corrosive at or above 2%. Dimethyl sulfoxide is not classified as mutagenic, carcinogenic, or reproductive toxic. The mixture is halogen-free and outside the restriction scope of RoHS 2011/65/EU. Flash point measured by ASTM D93 is above 100 °C, but monoethanolamine vapor has an odor threshold near 2.5 ppm and an indicative occupational exposure limit of 3 ppm. Local exhaust ventilation should maintain workplace concentration below that value. Tool installations must comply with local fire and electrical codes and, where applicable, SEMI S2 equipment safety guidelines for wet chemical stations.

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