| HS Code | 979087 |
| Product Name | TOK Strip-700 |
| Product Type | Photoresist Stripper |
| Manufacturer | Tokyo Ohka Kogyo Co., Ltd. (TOK) |
| Appearance | Transparent to light yellow liquid |
| Chemical Family | Organic amine-based stripping solution |
| Primary Function | Photoresist removal in semiconductor manufacturing |
| Application Method | Wet chemical immersion or spray processing |
| Specific Gravity | Approximately 1.0 |
| Viscosity | Low viscosity liquid |
| Solubility | Miscible with water and polar organic solvents |
| Storage Condition | Sealed container, cool and dark environment |
| Safety Classification | May cause skin and eye irritation; handle with appropriate protection |
As an accredited Photoresist Stripper TOK Strip-700 factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Photoresist Stripper TOK Strip-700 is packaged in a 20 liter polyethylene container, formulated for efficient photoresist removal. |
| Container Loading (20′ FCL) | One 20′ FCL loaded with drums/IBCs of Photoresist Stripper TOK Strip-700, safely secured, labeled, and segregated for transport. |
| Shipping | Per its SDS, Photoresist Stripper TOK Strip‑700 is shipped as: UN 3267, Corrosive Liquid, Organic, N.O.S. (contains 2-aminoethanol), Hazard Class 8, Packing Group III. Use UN-approved leak-proof containers, mark with the corrosive label, keep upright and away from incompatible materials, and include the SDS/shipping declaration. |
| Storage | Store Photoresist Stripper TOK Strip-700 in a tightly sealed, original or compatible container in a cool, dry, well-ventilated area. Keep away from direct sunlight, heat, open flames, and strong oxidizers. Ensure secondary containment to prevent leaks. Maintain area at stable temperature, inspect regularly, and follow local chemical storage regulations. |
| Shelf Life | Shelf life is typically 2 years from manufacture if stored sealed, at room temperature, and protected from light and moisture. |
In dual damascene via and trench sequences, the stripper must dissolve post-etch polymer, organometallic residues, and photoresist from copper/low-k interconnects without raising copper surface roughness or shrinking the via critical dimension. TOK Strip-700 is charged at 100 wt% concentrate into PFA wet benches equipped with quartz immersion heaters, pneumatic diaphragm recirculation pumps, 0.2 µm PTFE cartridge filtration, and nitrogen bubbling. The formulation addition ratio at point of use is 100 wt% product, 0 wt% co-solvent, and 0 wt% deionized water; the bath is not diluted. The immersion process is operated at 65–75 °C for 10–20 min, while single-wafer spray tools run the same liquid at 70 °C and 1.0 L/min spray flow. The upper temperature boundary is constrained by low-k sidewall damage measured as a capacitance shift between comb structures. Moisture is controlled by Karl Fischer titration; water ingress beyond 1.0 wt% destabilizes the solvent mixture and triggers polymer redeposition at the wafer bevel. Replenishment on immersion baths is made at 0.7–1.2 L of fresh chemical per 100 L bath when bath density shifts by ±0.005 g/cm³ or when refractive index drifts outside the lot-specific control range. Industry compliance standards include SEMI S2 for equipment safety, ISO 14644-1:2015 for cleanroom particle control during wafer-open handling, and REACH (EC) No 1907/2006 Article 31 for safety data sheet communication. Metal contamination is verified on production test wafers by vapor phase decomposition–droplet collection ICP-MS; copper, iron, and nickel limits are set per fab specification, and published data for this specific product configuration on advanced low-k films is limited. Terminal finished product types include copper dual damascene logic devices at mature technology nodes, analog/mixed-signal controllers, automotive microcontrollers, and high-reliability RF integrated circuits with aluminum or copper interconnect stacks.
In copper pillar bump and redistribution-layer fabrication, photoresist thickness after electroplating often reaches 60–120 µm, and the baked resist edge bead is more chemically resistant than the bulk film. The production line uses single-wafer spray processors with dual-fluid spray bars, 0.8–1.5 mm PFA nozzles, and temperature-controlled recirculation. The strip step is executed at 70–80 °C for 300–900 s depending on resist thickness and edge bead profile. The tool dispenses 50–80 mL of fresh TOK Strip-700 per 300 mm wafer during the initial wetting stage, then maintains low spin speed at 20–30 rpm for peel initiation and 800–1200 rpm for deionized water rinse. The formulation addition ratio is 100 wt% as-supplied product, 0 wt% co-solvent, and 0 wt% water; no co-solvent is mixed on the tool because altering the Hansen solubility parameter shifts resist swell and causes non-uniform lift-off at the wafer edge. The main failure mode observed on production-scale equipment is incomplete edge bead removal after the first pass; the corrective action is extending the low-speed wetting interval rather than raising temperature. Industry compliance standards include SEMI S2 for coating, develop, and strip tool safety, IEC 62474 material declaration for electrical and electronic equipment, and EU RoHS Directive 2011/65/EU Annex II restricted substance control at the device level. Copper compatibility is evaluated on blanket electroplated copper wafers by sheet resistance shift before and after strip, with a fab-specific control typically below 5 Å/min copper thickness loss; published data for compatibility with high-roughness copper pillars is process-specific. Terminal finished product types include copper pillar bumped wafers, redistribution-layer test vehicles, fan-out wafer-level packages, and 2.5D/3D interposer assemblies with through-silicon vias.
Indium gallium zinc oxide (IGZO) thin-film transistor arrays are sensitive to residual donor-like defects and hydrogen incorporation, so resist stripping after via or pixel electrode etch must remove acrylate or novolak photoresist without changing the back-channel oxygen vacancy distribution. In Gen 8.5 flat panel lines using horizontal spray tools, TOK Strip-700 is delivered at 50–60 °C through full-width fan nozzles across 2200×2500 mm glass substrates, with a total contact time of 180–600 s and a deionized water cascade rinse immediately after the chemical zone. The formulation addition ratio is 1:0 product to diluent by mass; the bath is continuously topped up by process control that meters 0.5–1.5 L of fresh chemical per 100 L bath per 50–100 m² of substrate surface, based on loaded area and steady-state refractive index. Water contamination is held below 0.5 wt% because excess moisture in the bath raises particle counts at the glass bevel and produces visible haze in final panel inspection. Industry compliance standards include SEMI S2 for flat panel production equipment safety, ISO 14644-1:2015 Class 5–7 cleanroom control during open transfer, and EU RoHS 2011/65/EU Annex II for restricted substance documentation in display modules. Production-line process control includes transfer-curve measurement of IGZO test elements after strip and anneal; a negative threshold-voltage shift larger than the fab-specific limit indicates incomplete residue removal or excessive amine concentration, but published data for TOK Strip-700 on IGZO thermal stability is limited. Terminal finished product types include large-size TFT-LCD television modules, mobile OLED backplanes, desktop monitor panels, and industrial display modules with high-resolution oxide semiconductor backplanes.
In sacrificial MEMS resist processing, the photoresist is used as a temporary spacer, anchor, or release layer and must be removed without attacking the underlying oxide, nitride, or metal layers while leaving no residue that alters mechanical resonance. TOK Strip-700 is used in immersion wet benches at 70 °C for 30–60 min, with continuous recirculation through 0.2 µm PTFE filters and nitrogen-induced agitation to avoid mechanical damage to released structures. The formulation addition ratio is 100 wt% concentrate and 0 wt% water; no water dilution is made because water increases surface tension and can collapse released beams before intermediate solvent exchange is complete. A production-scale failure mode seen in stiction-sensitive accelerometer and gyroscope lots is collapse of polysilicon combs after premature water rinse; the corrective sequence is full resist removal in the stripper, isopropyl alcohol exchange, and supercritical CO₂ drying. Industry compliance standards include SEMI S2 for wet bench safety, ISO 14644-1:2015 for wafer handling, and ASTM E595-15 for outgassing of hermetic MEMS packages where residual polymer is a contamination concern. The process is monitored with wafer surface particle scanners using 0.3 µm latex sphere equivalent sensitivity, and residual carbon is verified by X-ray photoelectron spectroscopy on representative dies. Terminal finished product types include inertial measurement units, accelerometers, gyroscopes, MEMS microphones, pressure sensors, and uncooled infrared microbolometers.
GaN-on-SiC and GaN-on-silicon epitaxial wafers create a specific strip conflict: the plasma etch step can carbonize and crosslink the resist mask, while the exposed titanium/aluminum or nickel/gold stack beneath must not be etched or lifted. In these lines, TOK Strip-700 is applied undiluted at 75–85 °C in quartz batch vessels or single-wafer spin processors for 10–20 min, followed by an ambient-temperature isopropyl alcohol quench to prevent redeposition of stripped polymer onto the mesa foot. The formulation addition ratio is 100 wt% as-supplied product, 0 wt% water, and 0 wt% acid or base; no pH spike is made because pH drift beyond 0.3 units accelerates aluminum corrosion on bond pad test structures. Replenishment is based on bath volume turnover after 25 100 mm wafers per 100 L bath or by refractive index shift, whichever occurs first. Industry compliance standards include SEMI S2 for compound semiconductor wet processors, REACH (EC) No 1907/2006 Article 31 for safety data sheet control, EU RoHS 2011/65/EU Annex II for solderable device finish documentation, and IEC 62474 for material declaration in power modules. On production lots, the most frequent failure is aluminum bond pad galvanic attack when the wafer is held in the hot chemical beyond 20 min; the corrective control is a hard timer interlock and immediate dump rinse at end of process. Terminal finished product types include GaN HEMT power amplifiers, radio-frequency front-end devices for cellular infrastructure, GaN power transistors for server power supplies, and silicon carbide power diodes and MOSFETs where the same strip sequence is qualified for mesa resist removal.
Silicon power device fabrication frequently uses high-dose boron or arsenic implant layers that form a carbonized crust on photoresist. The crust must be cracked by controlled solvent swelling rather than simple dissolution, because unswollen crust fragments can redeposit in trench gates. TOK Strip-700 is operated at 75–85 °C in batch immersion quartz tanks for 15–30 min, with a first swell period at 60 °C for 5 min to prevent shock exfoliation. The formulation addition ratio is 100 wt% product and 0 wt% diluent; no water is added because hydrolytic breakdown can accelerate silicon loss on exposed trenches. The downstream production process includes recirculation through 0.2 µm PTFE filtration, nitrogen agitation, and post-strip deionized water rinse followed by isopropyl alcohol vapor drying. Industry compliance standards include SEMI S2, REACH (EC) No 1907/2006 Article 31, EU RoHS 2011/65/EU Annex II, and IEC 62474 for material declaration. The most common production failure is incomplete removal at trench sidewalls after ion implant shadowing, detected by top-down scanning electron microscopy as polymer residue and corrected by extending the low-temperature swell phase rather than raising the final process temperature. Terminal finished product types include IGBTs, superjunction MOSFETs, fast-recovery diodes, and thyristors in wafer form.
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Photoresist Stripper TOK Strip-700 is a formulated liquid photoresist stripper supplied by Tokyo Ohka Kogyo Co., Ltd. for positive photoresist removal in display array processing, reticle manufacturing, and selected semiconductor packaging flows. The model designation Strip-700 identifies a solvent-alkanolamine blend that is used as a ready-to-use bath rather than as a dilutable concentrate. Its primary integration role is the removal of positive resist films after dry etch, ion implantation, or descum operations where the underlying layer stack includes aluminum, molybdenum, indium tin oxide, chromium, or passivated copper. In those applications, the stripper is selected to lift resist skins and polymerized residues without generating the severe aluminum or copper attack associated with sulfuric acid-peroxide mixtures and without the chlorinated solvent handling burden of older systems.
Typical solvent-class operation for TOK Strip-700 falls within 60 °C to 80 °C in batch immersion tanks and spray processors. The supplier certificate of analysis provides lot-specific results for density, water content, amine value, and filtered particle level. Because the proprietary formulation may include corrosion inhibitors and polar aprotic solvents, the public literature does not contain a complete numerical specification for the exact mixture. Process engineers are therefore advised to qualify the material using controlled coupons and fixed equipment rather than extrapolating from a single published value. The manufacturer-controlled safety data sheet remains the source for chemical identity, flash point, vapor pressure, and occupational exposure limits.
In production-scale automated wet benches, the primary process conflict is not the gross stripping capacity of the formulation but the separation between resist removal and metal attack at the edge of the qualified temperature window. As temperature rises, both the positive resist dissolution rate and the aluminum etch rate increase. For thin aluminum or molybdenum data lines, the acceptable process window may narrow to 5 °C or less. To maintain that window, heated recirculation baths are fitted with duplex resistance temperature detectors, and heater elements are not placed in direct contact with the tank wall. Recirculation flow rates of 40 L/min to 80 L/min are typical for 80 L to 120 L wet bench tanks. Stagnant zones near heating elements can create local temperature overshoot and produce localized aluminum thinning even when the control thermocouple reports a stable bath set point.
When exposed copper is present, the material is qualified separately from aluminum stacks. Copper is not passivated by the inhibitor package that protects aluminum, and organic solvent baths can show immersion-time-dependent copper roughening. Coupon testing should follow ASTM G31-72(2021) using the actual metal stack and the maximum expected production residence time, typically 30 min to 60 min. Stylus profilometry and scanning electron microscopy are used to measure etch depth and surface roughening. A short open-circuit potential test is not sufficient; copper pitting may initiate only after the native oxide is undermined by the solvent blend.
Water ingress into an alkaline organic stripper bath can change the dissociation equilibrium of the alkanolamine component and reduce the effectiveness of corrosion inhibitors on aluminum. In cleanroom ambient air with relative humidity above 60%, bulk and day tanks should be sealed or blanketed with dry nitrogen. The same concern applies to fractional-use bottles left open on a wet bench; container lids should be closed immediately after dispense. Lot qualification of the incoming material includes Karl Fischer titration using ASTM E203, and the acceptance criterion is set from supplier process capability data rather than from a generic water specification for single-component solvents.
Bath life in high-volume production is usually limited by resist loading or water uptake rather than by full consumption of the active stripper. When resist loading approaches the formulation-specific limit, stripped resin can redeposit as an organic haze on substrates, and filter pressure drop increases. The bath is monitored by visual clarity, filter differential pressure, and water content. A rapid pressure rise across the recirculation filter often indicates precipitation of resist residue or localized water contamination. Operators should not restore a loaded bath by adding fresh stripper indefinitely because nonvolatile residue and metal ions are not removed by dilution alone.
Filtration in recirculation loops is configured as a side-stream circuit with 10 µm or 5 µm polypropylene or PTFE membrane cartridges. When defectivity on bare substrates is the controlling parameter, point-of-use dispense may use 0.45 µm filtration or finer. Cartridges must be preflushed with the stripper or a compatible solvent to remove binder extractables before the filter is placed in service. Pressure drop is recorded after the filter has reached thermal equilibrium because the viscosity of the stripper decreases with temperature and a cold start can produce a misleading high differential pressure.
Wetted components for TOK Strip-700 delivery should be limited to fluoropolymers such as PTFE and PFA, 316L stainless steel, and selected elastomers. EPDM and perfluoroelastomer seals are generally compatible, while polycarbonate sight glasses and acrylic flow meters are not used because solvent-induced crazing can lead to component failure. PVC is avoided because plasticizer extraction can contaminate the bath. Magnetic-drive or double mechanical seal pumps are preferred for recirculation; single mechanical seals with water flush must be evaluated for leak path contamination.
Single-wafer spray processing is used in semiconductor fabs when cross-contamination control is more stringent than in panel batch lines. In that configuration, the stripper is delivered through a heated chemical line at a flow rate of 1.0 L/min to 2.0 L/min per nozzle, with backside rinse and nitrogen purge steps synchronized to the spin speed. Exhaust balance in the spray chamber must be set to prevent stripper vapor from condensing on the lid and dripping onto the substrate. Published data for TOK Strip-700-specific spray uniformity is limited, so nozzle spacing and dispense time are established by wafer edge bead removal tests and particle maps rather than by visual inspection alone.
Rinsing after stripping is a two-stage overflow sequence. The first stage uses hot deionized water at 40 °C to 50 °C to remove the bulk solvent film and reduce viscosity at the substrate surface. The second stage uses ambient deionized water until overflow resistivity reaches 10 MΩ·cm or above. If the rinse is terminated too early, amine-bearing residues remain in grain boundaries or high-aspect-ratio features and can form electrochemical cells that corrode aluminum after the batch is transferred to the next operation. For substrates with implanted resist crust, a short intermediate rinse with heated water helps prevent crust particles from redepositing on the wafer or panel.
The selection of TOK Strip-700 over other product classes is evaluated by comparing the stripping mechanism, operating temperature, waste stream, and metal compatibility under the specific device stack. Sulfuric acid-peroxide mixtures rely on strong oxidation and operate at 100 °C to 130 °C; they are effective on heavily implanted resist but generate high aluminum and copper etch rates and require acid-resistant plumbing. Hydroxylamine-based strippers operate at lower temperatures and can be gentler on some metals, but they carry amine-based residue and may require tighter pH control. Phenol-based strippers are effective for difficult positive resists but create phenolic waste handling and workplace exposure controls. The following table compares those classes at the level of publicly documented chemistry-class behavior; product-specific values for TOK Strip-700 should be obtained from the manufacturer's controlled datasheet.
| Feature | TOK Strip-700 class | Sulfuric acid-peroxide mixtures | Hydroxylamine-based strippers | Phenol-based strippers |
|---|---|---|---|---|
| Primary removal mechanism | Solvent swelling and dissolution | Strong oxidation and dissolution | Metal-ion chelation and resist swelling | Solvent dissolution with phenolic swelling agent |
| Typical bath temperature | 60 °C to 80 °C | 100 °C to 130 °C | 50 °C to 65 °C | 80 °C to 100 °C |
| Aluminum-line compatibility | Controlled by water content and inhibitor package | Poor; rapid attack | Moderate; inhibitor-dependent | Moderate; residue dependent |
| Copper compatibility | Requires stack-specific qualification | Poor in immersion; etch rate high | Generally better; still must be qualified | Requires qualification |
| Residue after strip | Organic film; removed by hot-water rinse | Sulfur-bearing residue; acid neutralization required | Amine residue; rinse limited | Phenolic residue; waste controlled |
| Waste handling | Solvent waste stream, no continuous oxidizer bleed | Acid waste with residual peroxide; no organic solvent load | Aqueous amine waste; pH neutralization | Phenolic waste stream |
Published data for TOK Strip-700 in direct comparison with referenced commercial hydroxylamine or sulfuric acid-peroxide formulations is limited. The table therefore serves as a screening matrix, not as a replacement for fab qualification. A product change from a phenol-based stripper to TOK Strip-700 requires requalification of the rinse system, seals, filter media, and waste manifold in addition to film-removal testing.
When the stripper is used on indium tin oxide films, the process target is to remove resist without reducing the ITO film thickness beyond the controlled loss budget. Etch-rate coupon tests for ITO are performed with sheet resistance measurement before and after immersion. Sheet resistance can change due to surface roughening even if thickness loss is small; therefore, resistance measurement alone is not sufficient. Optical transmission and haze measurements are included for display-grade ITO substrates.
On chromium hard masks, the stripper is usually selected to reduce residue rather than to etch chromium. However, chromium surfaces can develop micro-pitting when the stripper is held at the upper end of its temperature range for excessive time. Process optimization should use the minimum temperature and immersion time that achieve complete resist removal; extended over-strip should be avoided. Coupon tests should include the maximum over-strip condition, not just the nominal condition, so that routine line stops do not produce a separate failure mode.
Incoming inspection is designed to detect lot-to-lot shifts in solvent ratio or water content before the material is released to production. The following table lists the commonly applied test methods. The numerical acceptance limits are typically derived from three to five supplier lots and process capability studies, because the supplier may not publish a complete public specification.
| Parameter | Standard method | Control objective |
|---|---|---|
| Density | ASTM D4052 | Detects solvent ratio drift and gross contamination |
| Water content | ASTM E203 | Limits aluminum attack and loading loss |
| Amine value | ASTM D2896 | Confirms active stripper component concentration |
| Viscosity | ASTM D445 | Predicts recirculation pressure drop and spray tool flow behavior |
| Particle count | ISO 21501-4 | Controls defectivity on bare wafers and panels |
| Metal etch rate | ASTM G31 | Confirms compatibility with production metal stack |
No single viscosity or density value can be used as a universal release limit because the proprietary blend may contain multiple high-boiling solvents with differing evaporation rates. The control plan should trend density and water content per lot and pair that trend with a production coupon run on the first lot used in any new wet bench. Particle count is evaluated after 24 h of standing to allow microbubbles and fiber shedding from sample containers to settle; immediate post-shipment readings are often biased by entrained air.
Because the stripper is not a true aqueous solution, pH electrodes designed for water can drift or respond slowly. The amine value by non-aqueous titration is preferred for active-solvent control. Some fabs use a simplified acid-base back titration after solvent dilution; however, the result must be correlated to the full ASTM D2896 method before it is used for lot rejection.
In semiconductor wafer fabs, the stripper is commonly dispensed through a solvent cabinet with stainless steel or fluoropolymer canisters and a high-purity nitrogen pressurization system. Pressurized delivery avoids pump contamination, but the nitrogen line must be equipped with a point-of-use particle filter and hydrocarbon trap. If the stripper is delivered by a pump instead, the pump should be a low-pulsation magnetic-drive design with no dynamic shaft seals. Leak sensors in the cabinet should be solvent-resistant and tied to an automatic stop valve.
For flat panel display lines, batch immersion often runs at higher bath volumes and longer residence times than semiconductor single-wafer tools. In that environment, the dominant failure mode is not mechanical pump seal failure but organic residue build-up on tank walls and carrier edges. Scheduled cleaning with a compatible solvent or the manufacturer's cleaning protocol prevents cross-contamination. Cleaning frequency is usually set by cumulative panel throughput or the number of bath turnovers, and the recirculation filter differential pressure is used as the alarm trigger. If panel edge residue is observed before the filter pressure limit, the bath loading limit must be reduced.
Use of TOK Strip-700 in a wet bench that previously ran a phenol-based stripper requires a system-wide solvent compatibility check. Phenol-resistant elastomers are not automatically compatible with the TOK blend, and residual phenol in dead legs can alter the corrosion inhibition package. Lines should be flushed, drained, and verified by total organic carbon or ultraviolet spectroscopy before the first production lot is processed. Incompatible elastomer swelling can release particulate contamination and create a seal failure that is difficult to detect until a leak occurs.
For stripped aluminum lines, the post-rinse surface may be dried by isopropyl alcohol vapor or inert gas blow-off. If an alcohol vapor dryer is used, the drag-out of residual stripper must be minimized because stripper components can contaminate the alcohol bath and change its flash point. Alcohol replacement rate is set by the measured flash point rather than visual clarity; regular sampling by closed-cup flash point testing, such as ASTM D56, is used in the vapor dryer loop.
Monitoring of batch-to-batch variance in a production line is based on resist removal time, filter pressure rise, water content, and post-rinse metal loss. If the resist removal time increases without a water-content increase, the cause is usually resist loading or a change in the incoming resist formulation. If metal loss increases without a temperature change, the cause is often water ingress or loss of inhibitor by drag-out and replenishment imbalance. These two failure modes should be tracked separately rather than combined into a single bath-life number.
Storage of TOK Strip-700 in bulk is typically in high-density polyethylene or fluoropolymer-lined containers. Iron or copper-containing alloys are not used for long-term storage because trace metal dissolution can accelerate degradation. The material is not mixed with strong acids, hydrogen peroxide, or chlorine-containing oxidizers; such mixtures can generate heat and decompose the solvent blend. Spill response requires solvent-compatible absorbents and ventilation because the vapor may contain alkanolamine compounds. Local exhaust ventilation is employed at the wet bench and in the chemical storage cabinet.
When a production line switches to TOK Strip-700 from an aqueous stripper, the waste stream must be reclassified as organic solvent waste if it is not effectively diluted and neutralized. Local discharge permits should be checked before changing the stripper, and the waste manifold must be labeled for the new stream. The material should not be discharged to an acid waste line that may contain residual hydrogen peroxide from other bath operations.
On copper-pillar packaging wafers with exposed titanium-tungsten seed layers, strip qualification follows the same hierarchy but adds an electrochemical migration test after strip and rinse. The test measures leakage current between adjacent pillars under bias and humidity; a strip chemistry that passes only visual resist removal may still leave ionic contamination that reduces reliability. Qualification of TOK Strip-700 for such devices therefore includes biased humidity testing at 85 °C and 85% relative humidity after a controlled strip cycle.
