| HS Code | 752578 |
| Chemical Formula | PH3 |
| Molecular Weight | 33.997 g/mol |
| Cas Number | 7803-51-2 |
| Purity El Grade | >=99.9999% (6N) |
| Appearance | Colorless gas |
| Melting Point | -132.8 °C |
| Boiling Point | -87.7 °C |
| Vapor Density | 1.18 (air = 1) |
| Vapor Pressure At 20 C | 35.6 atm |
| Solubility In Water | 0.26 volumes PH3 per volume water at 20 °C |
| Flammability | Flammable gas; autoignition temperature ~38 °C |
As an accredited Phosphine (PH₃) Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in high-pressure steel cylinders for safe transport; 47 L capacity, with CGA valves and leak-tested seals for electronic-grade purity. |
| Container Loading (20′ FCL) | 20′ FCL: secure PH₃ electronic-grade cylinders upright in approved packaging, fully blocked/braced, compliant with dangerous goods regulations. |
| Shipping | Phosphine (PH₃) Electronic/EL Grade is shipped as UN2199, a toxic, flammable compressed gas, in DOT-approved high-pressure cylinders. Shipping requires Hazardous Materials (Class 2.3/2.1) labeling, a certified dangerous goods declaration, and qualified personnel. Cylinders must be secured upright, valve-protected, and isolated from oxidizers during ground or air transport. |
| Storage | Phosphine (PH₃) Electronic/EL Grade must be stored as a compressed gas in approved, secured cylinders in a cool, dry, well-ventilated area. Keep cylinders upright, valved, and capped when not in use. Store away from heat, ignition sources, oxidizers, and incompatible materials. Use leak detection and emergency ventilation; monitor for toxic exposure. |
| Shelf Life | Shelf life is typically 24 months from manufacturing date when stored in the original sealed cylinder under recommended conditions. |
| Parameter | InP/InGaAsP photonic epitaxy | AlGaInP LED epitaxy |
|---|---|---|
| Susceptor temperature | 600–650 °C | 650–750 °C |
| Reactor pressure | 30–100 mbar | 50–150 mbar |
| V/III ratio | 50–300 | 200–500 |
| PH3 supply configuration | 100% electronic grade or H2-diluted | 100% electronic grade or H2-diluted |
| Primary downstream device | DFB lasers, APDs, EAMs | Red-orange-yellow LEDs, VCSELs, HBTs |
High-aluminum-content AlGaInP emitters grown on 150 mm GaAs substrates are produced in planetary or close-coupled showerhead MOCVD tools using trimethylgallium, trimethylaluminum, trimethylindium, arsine, and electronic-grade PH3. The PH3 fraction is set independently for the InGaP and AlInP constituents, and a total V/III ratio of 200–500 is maintained because PH3 decomposition at 650–750 °C is less complete than AsH3, requiring excess phosphorus to prevent group-III-rich surface phases that shift the dominant emission wavelength and degrade internal quantum efficiency. Gas-phase pre-reactions between the aluminum precursor and PH3 are suppressed by reducing reactor pressure to 50–150 mbar and by increasing total carrier flow through the injection showerhead; insufficient carrier flow produces adduct-derived particulate that deposits on the quartz liner and changes wafer-to-wafer reproducibility. Device structures include multi-quantum-well active regions, p-AlInP cladding, and current-spreading layers, with in-situ reflectance monitoring used to terminate each layer after a specified optical pair thickness. Finished wafers are qualified by electroluminescence mapping for dominant wavelength, with edge exclusion criteria tied to ±2 nm across a 150 mm substrate on high-volume LED lines, and photoluminescence intensity and full-width at half-maximum are recorded against vendor control limits. Compliance for the PH3 cylinder and gas cabinet follows SEMI C3.16 and ISO 14644-1:2015 particle criteria at the point of connection, while scrubber efficiency for unconverted PH3 is validated by trace-level electrochemical sensors before exhaust release. A typical process conflict on production epitaxy tools is phosphorus carryover into subsequent InGaP/GaAs interfaces; post-run purging and temporary AsH3 stabilization are used to reduce cross-contamination, but the required purge time is tool-specific and published data for every close-coupled injector configuration is limited.
In silicon-based wafer fabs, PH3 diluted to 1% in ultra-high-purity hydrogen serves as the phosphorus source for n-type single-crystal silicon epitaxy and in-situ doped polysilicon. Reduced-pressure epitaxial reactors using dichlorosilane or silane co-meter PH3 at molar ratios between 10-5 and 10-2 to achieve blanket and buried-layer resistivities relevant to power transistors, BiCMOS collectors, and polysilicon gate electrodes. In low-pressure polysilicon deposition at 550–650 °C and 0.2–1.0 Torr, the dopant incorporation rate depends on both PH3 partial pressure and the amorphous-to-polycrystalline transition at the wafer surface; higher PH3 flows decrease as-deposited resistivity but can retard deposition rate and shift grain size. Process engineers compensate for dopant memory in horizontal LPCVD tubes by running dummy wafers after PH3-doped runs and by isolating the dopant line with separate mass-flow controllers. Terminal devices include DRAM cell plates, polysilicon gate stacks, and power MOSFET body regions, with sheet resistance verified by four-point probe according to ASTM F84-93 and phosphorus concentration confirmed by secondary ion mass spectrometry on monitor wafers. Operational incompatibility arises if PH3 is co-injected with oxidizing precursors into the same manifold without adequate purge, because phosphorus oxide formation can block the injector and shift subsequent wafer resistivity. Published data for exact dopant incorporation kinetics on specific RP-epitaxy tool geometries is limited, but the variance between rotated and non-rotated wafer positions is routinely quantified on production lines.After silicon transistor gate formation, PH3 is co-oxidized with silane or TEOS to deposit phosphosilicate glass layers that act as mobile-ion gettering and planarizing dielectrics. In sub-atmospheric and plasma-enhanced CVD configurations, PH3 is introduced alongside SiH4 and O2 or TEOS and O3 so that the resulting film contains phosphorus at 2–8 wt% as P2O5. The P2O5 component traps sodium and potassium ions that would otherwise drift toward the gate dielectric under bias-temperature stress; the gettering efficiency improves as phosphorus content rises but process limits appear above 8 wt% because the film absorbs moisture, develops tensile stress, and may form phosphoric acid on the surface. Film stress is measured by wafer curvature before and after anneal, with batch-to-batch variation influenced by PH3 flow stability, O3 concentration, and TEOS partial pressure. Reflow planarization is performed at 850–950 °C for films containing sufficient phosphorus, while lower-temperature PECVD films are used where thermal budget is constrained by silicide or metal layers. End products include intermetal dielectrics for VLSI logic, gettering layers under passivation, and sacrificial films in MEMS release steps. Compliance is anchored to SEMI C3.16 for gas quality and to wafer-level particle inspection according to ISO 14644-1:2015 at the load lock. A known failure mode is phosphorus content drift when the PH3 mass-flow controller is operated below 5% of full scale, where zero-offset errors produce large film composition shifts.
Hot-wall CVD systems growing 4H-SiC drift layers for 1.2 kV to 10 kV power devices operate at 1500–1650 °C with silane/propane chemistry and hydrogen carrier. Nitrogen is the standard n-type dopant, but PH3 is introduced where a different donor incorporation site or lower sheet resistance is required for specific blocking-voltage designs. Phosphorus incorporation in 4H-SiC is sensitive to carbon-silicon site competition, growth temperature, and C/Si ratio, so the PH3 flow fraction is frequently three to five orders of magnitude lower than the silane flow and must be controlled by low-vapor-pressure thermal mass-flow devices. Process conflicts include increased surface roughness and step bunching when PH3 is ramped too early; pre-epitaxial surface conditioning and continuous dopant ramping are used to preserve step-flow morphology. Finished devices include Schottky barrier diodes, junction barrier Schottky diodes, and vertical MOSFETs qualified by mercury-probe capacitance-voltage and Hall effect, with carrier concentration targets between 1×1014 cm-3 and 1×1017 cm-3 depending on drift-layer thickness and blocking voltage. Gas delivery compliance includes SEMI C3.16 material specifications and continuous toxic gas monitoring at the gas cabinet, valve manifold box, and exhaust duct. Published data on phosphorus incorporation efficiency in commercial hot-wall reactors is limited because temperature profile, susceptor material, and ramp-rate differences dominate the measured doping density.
Although PH3 is not the most widely used phosphorus feed in beamline ion implantation, it functions as a hydride source gas in selected medium-current implanters to generate phosphorus ions for n-well and source/drain formation in CMOS platforms. The gas is admitted to the ion source through a mass-flow-controlled manifold, ionized, and then mass-separated to extract 31P+ beams at energies from 10 keV to 200 keV and doses from 1012 cm-2 to 1016 cm-2. Implanter-specific issues include source deposit buildup from phosphorus and hydrogen recombination, accelerator column contamination, and the need for extensive SCBA-protected maintenance when the source is opened. The terminal product is a dopant profile in silicon that is activated by rapid thermal processing, with sheet resistance monitored by ASTM F84-93 and junction depth measured by secondary ion mass spectrometry. Operational boundaries are set by PH3 pyrophoric and toxic risks, so gas cabinet exhaust, purge gas interlocks, and scrubber capacity are specified by the implanter vendor and local fire code rather than by wafer-level performance alone. Published data for PH3-source implant performance on advanced logic nodes is limited, since many fabs have migrated to solid-source or alternative gaseous precursors to reduce hazardous gas inventories.Competitive Phosphine (PH₃) Electronic/EL Grade prices that fit your budget—flexible terms and customized quotes for every order.
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Phosphine (PH3) Electronic/EL Grade is a liquefied compressed gas certified for phosphorus delivery in semiconductor front-end processes where oxygen, moisture, carbon, and metal impurities must not interfere with device electrical performance. The material is supplied most often under 5N5 and 6N assay designations, corresponding to 99.9995% and 99.9999% minimum purity, respectively. The EL suffix records suitability for electroluminescent and laser diode epitaxy; it does not distinguish a different molecular species from other high-purity phosphine fills. Primary applications include n-type doping in silicon ion implantation, group-V precursor duty in metal-organic chemical vapor deposition of InP, GaAsP, GaInP, and AlInP, and phosphorus doping of polysilicon and phosphosilicate glass by chemical vapor deposition. The CAS registry number is 7803-51-2, the molecular mass is 33.998 g/mol, the normal boiling point is -87.7 °C, and the vapor pressure at 21.1 °C is approximately 41.3 atm (606 psig).
The certification envelope for EL-grade material differs from commodity 3N phosphine mainly in the maximum permitted oxygen, moisture, carbon dioxide, total hydrocarbons, and metal impurities. In 3N material, oxygen and moisture may be measurable in the tens of parts per million by volume, whereas Electronic/EL Grade 5N5 fills are typically controlled to ≤ 0.5 ppmv for each. The 6N envelope, used for oxygen-sensitive phosphide epitaxy, commonly reduces oxygen and moisture to ≤ 0.1 ppmv. Total hydrocarbons are limited to ≤ 0.5 ppmv in 5N5 material and ≤ 0.1 ppmv in 6N material to avoid amorphous carbon incorporation. The specification also restricts AsH3 and H2S to sub-ppm concentrations because these hydrides act as unintentional dopants in III-V layers.
Representative acceptance limits assembled from supplier product bulletins are shown below; exact values vary by fill site and cylinder passivation method.
| Parameter | 5N5 EL limit | 6N EL limit | Analytical method |
|---|---|---|---|
| Assay | 99.9995% | 99.9999% | Difference from measured impurities |
| O2 | ≤ 0.5 ppmv | ≤ 0.1 ppmv | GC-PDHID |
| H2O | ≤ 0.5 ppmv | ≤ 0.1 ppmv | Cavity ring-down spectroscopy |
| N2 | ≤ 1 ppmv | ≤ 0.5 ppmv | GC-PDHID |
| CO | ≤ 0.5 ppmv | ≤ 0.1 ppmv | GC-PDHID |
| CO2 | ≤ 0.5 ppmv | ≤ 0.1 ppmv | GC-PDHID |
| Total hydrocarbons | ≤ 0.5 ppmv | ≤ 0.1 ppmv | Flame ionization detection |
| Metal impurities | ≤ 10 ppbw | ≤ 1 ppbw | ICP-MS after impinger sampling |
Lot release testing is performed in laboratories accredited to ISO/IEC 17025; calibration gas mixtures are tied to NIST-traceable reference materials where available. Gas chromatography with pulsed discharge helium ionization detection is used for permanent gases; moisture is measured by cavity ring-down spectroscopy because it avoids surface adsorption artifacts common in older electrolytic sensors. Metal impurities are collected by impinger and quantified by ICP-MS. Published data for lot-to-lot metal variance is limited, but aluminum, iron, and zinc are the most frequently monitored transition metals because of their impact on minority carrier lifetime in InP and GaInP.
In MOCVD of phosphide semiconductors, the PH3 source is injected through a high-pressure mass flow controller into the group-V manifold. The low oxygen and moisture content of the EL grade matters most during low V/III ratio growth, where excess group-V hydride is insufficient to scavenge oxygen from the growth surface. Oxygen incorporation in InP and GaInP can create non-radiative recombination centers, reduce photoluminescence intensity, and shift Hall carrier concentration. Typical phosphine mass flow rates for multi-wafer planetary reactors range from 50 sccm to 500 sccm, with V/III ratios between 20:1 and 150:1. At the gas stick, point-of-use filtration at 0.003 µm or smaller is specified because phosphine decomposition particles can otherwise migrate to the chamber and cause epitaxial defects. The EL designation is most often invoked for MOCVD growth of quaternary AlInGaP light-emitting diode and vertical-cavity surface-emitting laser structures. In these devices, oxygen contamination at the AlInP/InGaP interface can produce mid-gap traps that lower internal quantum efficiency and accelerate thermal degradation under forward bias. Some epitaxial reactors are qualified with in-line Fourier transform infrared spectroscopy to verify that O2 and H2O concentrations have not risen after cylinder change.
For silicon ion implantation, Electronic/EL Grade PH3 is selected when beam currents and source lifetimes are sensitive to gas purity. Carbon monoxide and carbon dioxide in the source gas can form carbon deposits on the arc chamber walls, shifting ion beam stability. Moisture can increase the formation of oxygen-bearing ions, which complicates mass separation at 31 amu for phosphorus. The certificate of analysis must be compared with the implanter manufacturer’s maximum impurity limits; some high-current implanters accept only 5N5 purity while others used for shallow-junction doping require 6N moisture and oxygen specifications.
Electronic/EL Grade PH3 is packaged in lecture bottles, subatmospheric delivery systems, and full-size cylinders with water capacities from 0.44 L to 44 L. Because vapor pressure at 21.1 °C is approximately 41.3 atm, the cylinder valve outlet must be reduced through a dual-stage regulator built from 316L stainless steel with Hastelloy C-22 or equivalent trim. The line from cylinder to tool should be electropolished 316L stainless steel with an inner surface roughness of Ra ≤ 0.25 µm to minimize adsorbed moisture and particulate release. Cylinder connections are specified by the fill site; the user must verify the valve outlet and regulator seal against the delivered cylinder CGA designation and the gas cabinet datasheet.
Regulator selection is critical because PH3 can degrade elastomeric seals used in generic gas regulators. Metal-to-metal diaphragm regulators with Hastelloy C-22 trim are specified; the regulator body is pre-passivated with a high-purity inert gas bake-out before installation. Outlet pressure is typically set to 30–60 psig for MOCVD gas sticks and 5–15 psig for ion implant source delivery, depending on the equipment manufacturer. The gas line should be swept with high-purity nitrogen or argon for at least 10–20 min before and after cylinder replacement to reduce moisture and oxygen ingress.
Subatmospheric storage and delivery packages reduce the maximum release rate during valve failure by storing the gas below ambient pressure. However, these packages introduce additional internal components that may contribute to moisture reads if not properly passivated. Cylinders must be stored vertically in exhausted gas cabinets meeting SEMI S2 and local fire code requirements. Exposure monitoring at the gas cabinet exhaust and tool foreline is normally set to alarm at 0.3 ppm, the ACGIH TLV-TWA, with a second alarm at 1 ppm before emergency shutdown. The NIOSH immediately dangerous to life or health value is 50 ppm. Cylinder heating must not exceed 50 °C because pressure rises rapidly near the critical point. Incompatible materials include strong oxidizers, halogens, and certain metal oxides that can catalyze phosphine decomposition.
Gas cabinets used for PH3 service are equipped with toxic gas detectors that sample from the cabinet interior and exhaust duct. Alarm set points are typically 0.3 ppm and 1.0 ppm; the higher alarm initiates automatic isolation of the cylinder valve and purge. Cylinder change-out is performed under an inert purge with a portable gas monitor in the access corridor. These measures are required not because of the purity of the gas but because of its acute inhalation hazard.
Centralized PH3 delivery is used in some high-volume fabs to reduce cylinder change frequency and cabinet footprint, but it creates a specification conflict between implant and MOCVD tools. An ion implantation source may tolerate oxygen and moisture concentrations that would degrade InP or GaInP epitaxy. Pressure fluctuations during high-flow implant draws can also perturb the mass flow control stability of an MOCVD group-V line. The documented solution is to segregate 6N MOCVD supply from 5N5 implant supply, or to install point-of-use purifiers on the MOCVD gas stick that reduce oxygen and moisture to ≤ 0.01 ppmv. Qualification of the purifier must include in-line tunable diode laser absorption spectroscopy for moisture and oxygen at the reactor inlet because published data for purifier capacity at high PH3 flow is limited.
Some suppliers append suffixes such as PH3-EL-5N5 or PH3-EL-6N to cylinder part numbers. The suffix does not change the CAS number or chemical properties; it records the certification envelope. Users should request the certificate of analysis for the exact lot before connecting to a process tool because fill site procedures and analytical detection limits can vary.
Compared with fumigant-grade PH3 and dilute phosphine mixtures, the Electronic/EL product differs in certification scope, not molecular identity. Fumigant-grade material may contain higher hydrocarbons, ammonia, and moisture that are not compatible with semiconductor process chambers. Dilute mixtures in hydrogen or nitrogen reduce storability and safety risk but constrain the V/III ratio available for MOCVD. The selection between 5N5 and 6N should be driven by the most oxygen-sensitive device layer in the process flow; if the cylinder is later used for InP regrowth or AlInP cladding layers, the 6N specification becomes the limiting constraint.
