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PCB Dry Film Photoresist Eternal Chemical ETEC

    • Product Name: PCB Dry Film Photoresist Eternal Chemical ETEC
    • Factroy Site: Yudu County, Ganzhou, Jiangxi, China
    • Price Inquiry: admin@ascent-chem.com
    • Manufacturer: Ascent Petrochem Holdings Co., Limited
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    Specifications
    HS Code 738567
    Product Name ETEC Dry Film Photoresist
    Product Type Negative-working dry film photoresist
    Color Blue
    Film Thickness 25 µm (typical available range: 20-50 µm)
    Resolution 25 µm line/space for 25 µm film
    Lamination Temperature 100-120 °C
    Lamination Pressure 3-5 kg/cm²
    Exposure Energy 80-120 mJ/cm² (depending on film thickness)
    Developer 1% sodium carbonate solution at 28-32 °C
    Stripping Solution 3-5% sodium hydroxide solution at 45-55 °C
    Adhesion Excellent adhesion to copper surfaces
    Shelf Life 6 months from manufacturing date
    Storage Conditions Store below 25 °C and under 60% RH, protected from UV/light

    As an accredited PCB Dry Film Photoresist Eternal Chemical ETEC factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.

    Packing & Storage
    Packing Packaged as light-proof, sealed rolls of dry film photoresist with desiccant to prevent contamination. Quantity: 1 roll.
    Container Loading (20′ FCL) Loading 20′ FCL container with PCB Dry Film Photoresist ETEC: palletized, secured cartons/rolls, ensuring safe transport and maximum weight utilization.
    Shipping Ship via opaque, sealed packaging to block UV/light exposure. Maintain cool, dry conditions to prevent polymer degradation. Avoid extreme temperatures, moisture, and pressure. Label as photosensitive PCB material; safe standard air freight or ground transportation is acceptable. Include material safety data sheet for customs clearance and handling compliance.
    Storage Store PCB Dry Film Photoresist (ETEC) in its original sealed packaging in a cool, dry, dark environment at controlled room temperature, ideally 15–25°C. Avoid humidity, direct sunlight, and heat sources. Keep away from sparks and oxidizers. Handle with clean gloves. Follow the manufacturer’s stated shelf life and rotate stock accordingly.
    Shelf Life Shelf life is typically 12 months if stored in original packaging below 25°C, away from light and humidity.
    Application of PCB Dry Film Photoresist Eternal Chemical ETEC

    For innerlayer patterning of rigid multilayer FR-4 core stock, Eternal Chemical ETEC dry film photoresist is used as an etch mask after alkaline cleaning, sodium persulfate or sulfuric peroxide micro-etching, and warm-air drying. The resist is a negative-acting aqueous-processable photopolymer supplied in dry film thicknesses from 20 µm to 50 µm. In a yellow room held at 22±2 °C and 55±5 %RH, lamination on a hot roller laminator with silicone rubber covered rolls is maintained at roll surface temperatures of 100–120 °C, transport speeds of 1.0–2.0 m/min, and nip pressures of 3–5 kgf/cm². The polyester cover sheet is peeled only after the photopolymer has contacted the copper surface to prevent air entrapment. UV imaging is performed in a collimated or semi-collimated exposure unit with spectral output weighted between 350 nm and 420 nm; typical exposure doses for 25–38 µm resist range from 45 mJ/cm² to 80 mJ/cm², measured with a calibrated radiometer at the vacuum frame plane. Exposure latitude is narrow because under-exposure reduces crosslink density at the base of the resist and promotes undercut during development, while over-exposure increases line broadening through interfacial scatter. Development is carried out in a sodium carbonate solution at 0.8–1.2 wt% and 28–32 °C using spray chamber pressure of 1.5–2.5 kg/cm²; the breakpoint is controlled to 40–60% of the developer chamber length to maintain clean resist sidewalls. After development, exposed copper is removed by cupric chloride or alkaline ammonia etching, and the remaining resist is stripped with 3–5 wt% sodium hydroxide at 50–55 °C. The etched line quality is evaluated against IPC-A-600 and IPC-6012 Class 2/Class 3 criteria for conductor width and annular ring. On production lines, the most frequent failure under subtractive etching is edge lifting caused by insufficient copper surface roughness after micro-etching, which appears as halo or resist loss at the conductor periphery during spray impingement. The process window is therefore sensitive to both the surface preparation sequence and the ratio of exposure dose to film thickness.

    Dry film thickness (µm)Typical UV exposure dose (mJ/cm²)Sodium carbonate developer concentration (wt%)Maximum reliable tented hole diameter (mm)
    2040–600.8–1.00.3–0.4
    2545–700.8–1.00.4–0.5
    3855–851.0–1.20.6–0.7
    5065–1001.0–1.20.8–1.0

    What Limits Tenting Reliability Over Through-Hole Vias on Double-Sided and Flex Laminates?

    Tenting applies the ETEC dry film as a bridging membrane over drilled through-holes, eliminating the need for soldermask via plugging on double-sided rigid and flexible copper-clad laminates. The process places concentrated mechanical stress at the rim of each hole during lamination and thermal stress. For a 25 µm film, reliable tenting is usually limited to holes no larger than 0.4–0.5 mm; for 50 µm film, holes up to 0.8–1.0 mm are occasionally tented, but the maximum safe aperture depends on the lamination pressure profile and the glass transition temperature of the photopolymer. Lamination for tenting uses slower transport speed, typically 0.5–1.0 m/min, and slightly reduced nip pressure relative to innerlayer lamination to avoid film thinning at the hole edge. Air entrapment within the via barrel is a critical defect because trapped air expands during post-lamination thermal excursions and can cause the resist cap to blister. On double-sided flex, the resist must additionally withstand bend-induced deformation around the hole surroundings. Thermal shock testing per IPC-TM-650 2.6.8, commonly used to evaluate tented via integrity, subjects the laminate to solder float at 288 °C for 10 s. The primary failure modes observed on production lines are radial cracking from the hole rim, circular resist rips above the via, and solvent entrapment blisters after the final rinse. Process control involves measuring the resist cap thickness over the hole by cross-section or non-contact optical profilometry; a thickness loss greater than 20% of the original dry film thickness at the rim indicates excessive tension during lamination and predicts lower thermal stress resistance. Published data for ETEC films on very small holes below 0.3 mm in flex materials is limited, and those configurations are generally qualified by the fabricator using their own lamination and thermal stress conditions.

    When a high-density outer layer is produced by pattern plating, ETEC dry film serves as a plating resist that must survive acidic cupric ion exposure, organic addition agents, and internal stress from high-throw acid copper deposition. The board is first plated with electroless copper to make holes conductive, then laminated with dry film, exposed with the outer layer photo-tool, and developed to open only the circuit trace and pad areas. Acid copper electroplating is commonly operated at current densities from 1.5 A/dm² to 2.5 A/dm² with a bath temperature of 24–28 °C and air or eductor agitation. Typical high-throw acid copper electrolyte contains copper sulfate at 50–80 g/L, sulfuric acid at 180–250 g/L, chloride ion at 40–80 ppm, and a brightener-suppressor system based on sulfopropyl sulfonates and polyalkylene glycols. For via filling or through-hole wall reinforcement, plated copper thickness may reach 20–25 µm. The dry film must retain adhesion under this plating thickness, because lateral growth at the resist/copper interface causes overplating and mushroom-shaped sidewalls if adhesion is uneven. After copper plating, tin or tin-lead etch resist is electroplated to a thickness of 5–8 µm; alternative selective finishes may use nickel and gold. ETEC dry film is then stripped in 3–5 wt% sodium hydroxide or a formulated organic stripping solution at 50–55 °C, and the exposed base copper is removed by differential etching. In this application the main process conflict is the trade-off between development aggressiveness and plating adhesion: an over-developed image line loses the less crosslinked resist toe, allowing acid copper electrolyte to penetrate under the resist edge, whereas under-development leaves residual polymer pools that produce scum and can lead to pre-preg contamination in downstream lamination. The sidewall profile is inspected after differential etching with SEM or optical microscopy; a vertical-to-slightly positive slope is preferred, with no undercut exceeding the allowable conductor width tolerance defined in the customer-specific IPC-6012 Class 2/3 profile.

    Chemical Milling Mask Performance on Copper Alloy Lead Frame Stock

    ETEC dry film is laminated onto copper alloy strip for photochemical machining of lead frames and precision etched metal parts. The substrate alloys are typically Cu-Fe-P grades such as C19400 or Cu-Ni-Si grades such as C70250, sometimes with selective silver spot plating performed after etch. Typical strip thickness is 0.10–0.50 mm. After lamination, exposure, and development, the dry film mask must withstand acid cupric chloride or ferric chloride etchants sprayed at 45–55 °C and pressures of 1.0–3.0 kgf/cm² for several minutes while maintaining adhesion at the etched sidewall. Because chemical milling etches isotropically, the side etch factor becomes the dominant dimensional variable; for deep etching the lateral undercut may approach 1:1 with the etched depth unless compensating the photo-tool is performed. Process engineers use step etching with fresh etchant, downstream rinse, and resist stripping to produce half-etch features for bond-line locks and tie bars. The critical threshold is the resist edge at the top of the etch cavity: as etch depth increases, the etchant generates an undercut notch that concentrates hydraulic shear on the resist overhang. If the resist adhesion near the etched rim is weakened by moisture uptake or excessive developer attack, the overhang breaks away and the etched contour becomes ragged. On production-scale conveyorized etching machines, panel speed is set to keep the total etch time balanced with the available etch factor, often targeting minimum etch factor between 1.5 and 2.0 for feature widths above 100 µm. Dimensional inspection after stripping uses optical measurement systems with tolerance bands of ±10 µm or better, depending on the lead pitch. Published data for ETEC dry film on non-copper substrates and exotic lead frame alloys is limited; qualification for these configurations requires pilot-lot testing rather than reliance on general printed-circuit process windows.

    When Etch Depth Exceeds Copper Seed Thickness in Semi-Additive Package Substrate Processing

    In semi-additive processing of organic package substrates, ETEC dry film is applied over a thin electroless copper seed layer and used to define fine-pitch circuit features by selective electrodeposition. The seed thickness may be in the range of 2–5 µm, and the carrier layer is often a low-roughened or ultra-thin copper clad laminate or resin-coated copper. A dry film thickness of 15–20 µm is used for lines and spaces in the 25–35 µm pitch range. Lamination pressure and surface hardness determine whether the resist conforms to the underlying circuit topography without crushing the thin seed layer. Imaging is increasingly performed with laser direct imaging systems with a depth of focus and exposure dose adjusted for the resist thickness; typical exposure doses for 15–20 µm film can range from 35–60 mJ/cm², but the supplier-specific response must be measured by a step wedge. Development uses dilute sodium carbonate or potassium carbonate solution with tight pH control; the key residue failure is scumming at the interface between the seed copper and the resist base. Semi-additive processing then plates acid copper into the defined resist openings to build the circuit traces and vias to 15–20 µm thickness. The dry film must withstand the plating chemistry and resist the lateral stress that arises when plated copper grows above the resist surface. After copper plating, the dry film is stripped, and the exposed seed copper is flash-etched to remove the conductive layer between the plated features. The flash etch must be fast enough to remove the seed layer but not so aggressive that it undercuts the fine traces. Because the seed layer is thinner than the plated feature height, the etch depth required to remove the seed is much smaller than the plated conductor thickness, making the resist strip cleanliness and etch uniformity the primary yield limiters. Process deviations such as developer residue, redeposited polymer, or excessive bath temperature can produce resist lifting and subsequent copper nodules. Inspection is performed per IPC-6012, and cross-section analysis measures trace width deviation at the top, middle, and bottom of the plated line. The absence of robust published data for ETEC films at pitches below 25 µm means those applications require a dedicated design-of-experiment matrix before high-volume release.

    Following lamination and vacuum-frame exposure, ETEC dry film also serves as the etch mask in photochemical machining of SMT stencil foils, precision screens, and filtration meshes. The substrate is typically cold-rolled stainless steel 304 or 301 foil from 0.05 mm to 0.30 mm. The applied dry film is often 38–50 µm thick to resist prolonged contact with ferric chloride or cupric chloride etchants at temperatures between 45 °C and 55 °C. In stencil manufacture, apertures for solder paste deposition may be as small as 0.08–0.12 mm, and positional tolerance is usually held within ±5–10 µm. The resist must cover both sides of the foil when double-sided etching is required; alignment of the two photo-tools is achieved with tooling pins or vision alignment. The etching process is run in a conveyorized spray etcher or oscillating spray chamber with programmable pressure control. The main production defect is galvanically assisted attack at the resist/steel interface, which starts at the aperture rim and spreads under the resist if the film has lost adhesion due to excessive heat or alkaline developer attack. Rinse water quality, etchant free-acid concentration, and spray turbulence all influence the sidewall profile of the stencil aperture. Etch depth is normally equal to the full metal thickness, so the resist receives high-pressure fluid impingement for the entire removal period. After etching, the resist is stripped in heated alkaline solution, and the aperture sidewalls are examined by SEM or optical profilometry to confirm a smooth trapezoidal profile that permits stable solder paste release. Published data for Eternal Chemical ETEC dry film on stainless steel stencil etching is limited; the process parameters are typically adapted from copper chemical milling and refined by controlled run-off trials on the specific foil grade and etchant composition.

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    Certification & Compliance
    More Introduction

    In rigid PCB imaging lines requiring fine-line patterning on copper-clad laminate, the Eternal Chemical ETEC dry film photoresist is employed as a negative-acting, aqueous-alkaline-developable photopolymer layer. The product is supplied as a three-layer composite: a polyethylene terephthalate carrier film, a carboxylated acrylate photoresist layer, and a polyolefin cover sheet. The ETEC 6228 grade is commonly specified with a nominal photoresist thickness of 38 µm; alternative grades in the same chemistry platform are available at 20 µm, 25 µm, and 50 µm thicknesses for different copper weights and aspect-ratio requirements. After hot-roll or vacuum lamination, UV exposure through a phototool crosslinks the resist in the exposed regions, reducing solubility in 0.9–1.1 wt% sodium carbonate developer. Unexposed areas remain soluble and are removed by spray development. The resulting pattern supports two primary process routes: innerlayer etching and acid copper pattern plating.

    The carboxylated acrylate formulation differs from early dry film systems by eliminating organic solvent development. The exposed photopolymer network contains pendant carboxylic acid groups that are ionized only in the unexposed state under alkaline conditions, so the development step produces an aqueous waste stream rather than a solvent-laden waste stream. The resist layer includes photoinitiator, multifunctional acrylate monomers, thermal polymerization inhibitor, and adhesion promoter. The thermal polymerization inhibitor remains active during storage but is consumed during UV exposure; this mechanism gives the film a shelf life of 12 months from manufacture when stored at 5–20 °C and below 60% relative humidity. Storage outside these boundaries reduces photospeed and can increase development residue. Published data for this specific configuration is limited for long-term batch-to-batch photospeed drift; users should confirm lot-specific photospeed with a Stouffer 21-step tablet before production exposure.

    What lamination and exposure boundaries control fine-line resolution and sidewall geometry?

    Lamination parameters are governed by the need to remove air between the resist and the copper surface while avoiding excessive cold flow. A hot-roll laminator with silicone rubber rolls and closed-loop temperature control is set to a roll temperature of 100–125 °C, a lamination speed of 0.8–2.0 m/min, and a nip pressure of 0.25–0.45 MPa. For printed circuits with recessed copper features deeper than 70 µm or high aspect-ratio through-holes, vacuum lamination at 0.08–0.12 MPa vacuum level is required to eliminate air entrapment. Copper surface preparation is critical: the innerlayer is microetched with sodium persulfate or sulfuric-peroxide to an etch depth of 1.0–2.5 µm, rinsed, and dried to a surface moisture content below 0.1 mg/cm². Adhesion to copper measured after tape peel per IPC-TM-650 method 2.4.1 is typically above 4 N/cm at the recommended lamination temperature.

    Temperature deviations outside the 100–125 °C window produce recognizable failure modes on production lines. At lower roll temperatures, air bubbles remain trapped at the copper/resist interface and appear as circular voids after development. At temperatures above 130 °C, cold flow thins the resist over the copper surface and can reduce the effective resist thickness by 15–20%, which degrades etching resistance in cupric chloride. Lamination speed and pressure interact with board surface topography; for a 1.6 mm FR-4 panel with 35 µm copper, a speed of 1.2 m/min at 115 °C and 0.35 MPa is a commonly used starting condition. Panels with 70 µm copper require the speed to be reduced to 0.8–1.0 m/min to ensure complete conformity at the base of the circuit traces.

    After lamination, the panel is allowed to dwell for 15–30 minutes before exposure to relax laminator-induced stress and improve dimensional stability. Exposure may be performed with a collimated UV-A source at 365 nm or with a laser direct imaging system at 405 nm, depending on the grade. Photospeed is expressed as the energy density needed to retain 8 steps on a Stouffer 21-step density wedge. For the 38 µm film, the manufacturer-published photospeed range is 30–60 mJ/cm² at 365 nm when measured with a UV-A radiometer calibrated under ISO 17025. The exposure energy for LDI at 405 nm is typically higher because photoinitiator absorption is lower at the longer wavelength. A 21-step Stouffer evaluation is run on every new batch because photospeed shifts with storage age, lamination temperature, and humidity.

    Manufacturer-published reference ranges for Eternal Chemical ETEC 6228 38 µm dry film photoresist
    Parameter Reference range Test method or equipment
    Photoresist layer thickness 38 ± 2 µm Calibrated contact micrometer, ISO 4593
    PET carrier thickness 19–25 µm Calibrated contact micrometer
    Cover sheet thickness 25–35 µm Calibrated contact micrometer
    Photospeed at 365 nm 30–60 mJ/cm² UV-A radiometer, ISO 17025
    Resolution on 18 µm copper 50 µm lines and spaces Cross-section optical microscopy at 200×
    Adhesion to copper, tape peel 4 N/cm IPC-TM-650 method 2.4.1
    Development breakpoint 35–50% Conveyorized spray chamber
    Strip condition 2–4 wt% NaOH, 45–55 °C, 30–60 s Conveyorized spray stripper

    Development is conducted in a conveyorized spray chamber containing 0.9–1.1 wt% sodium carbonate at 28–32 °C. Nozzle pressure is maintained at 1.5–2.5 kg/cm², and conveyor speed is adjusted to produce a 35–50% breakpoint. Breakpoint is defined as the point at which unexposed resist has just been removed from the substrate; operating at the low end of the range preserves adhesion but increases residue risk, while operating at the high end improves throughput but can undercut fine lines. Developer pH is controlled within 10.0–11.0; higher pH accelerates unexposed resist removal but also attacks the exposed resist surface, increasing sidewall undercut and reducing adhesion. Sodium carbonate concentration is maintained by a conductivity controller with a dead band of ±0.05 wt%; temperature is maintained by an in-line heater at 28–32 °C. After development, the panel is rinsed in deionized water and dried before etching or plating. Chemical resistance testing by immersion in acidic cupric chloride at 50 °C for 60 minutes shows no blistering or lifting when the resist is fully crosslinked. For alkaline etching, the resist remains intact at 49–54 °C for 90–120 seconds, provided that the etch chemistry does not exceed pH 12.0.

    Chemical resistance and plating resist differentials in manufacturer-published data

    In pattern plating, the ETEC film functions as a mask for acid copper sulfate plating at 2.5–4.0 A/dm² and 25–28 °C for 60–120 minutes. The resist must maintain adhesion at the resist/copper interface and resist electrolyte penetration along the sidewall. Compared with a solvent-developable dry film that swells in contact with plating baths, the carboxylic acid network of ETEC resists shows lower thickness increase after plating exposure; typical thickness change is reported as 5–10% after 60 minutes in an acid copper bath at 28 °C. The sidewall angle after development is 70°–80°, which provides a wider base for adhesion. However, adhesion loss can occur if the plated copper overplates the resist sidewall by more than 50% of the resist thickness; this limitation is common to all dry film resists and requires plating distribution control.

    Differences from solvent-based resists are most evident in waste handling and resolution. Because ETEC is developed in dilute sodium carbonate, the developer waste stream contains dissolved acrylate oligomers and can be treated by pH neutralization and coagulation; solvent-based resists require separate solvent recovery or incineration. The aqueous process also permits a thinner resist layer to cover copper surfaces without forming pinholes. Resolution on 18 µm copper is typically 50 µm lines and spaces for the 38 µm film; thinner 25 µm films extend resolution to 40 µm lines and spaces under the same exposure and development conditions. The trade-off is that the thinner film has lower tenting strength and is not recommended for hole sizes above 300 µm in tent-and-etch applications.

    Laser direct imaging at 405 nm requires a grade with an adjusted photoinitiator package. The ETEC LDI grades show lower photospeed at 405 nm than at 365 nm, so the LDI tool is calibrated using a 21-step wedge at the operating wavelength. For a 38 µm film, LDI exposure doses in published data may range from 80 mJ/cm² to 150 mJ/cm² at 405 nm, depending on resist grade and copper reflectivity. Copper reflectivity changes after microetch: darker microetched surfaces reduce backscatter and stabilize effective dose at the resist/copper interface. Underexposure at the base of fine lines produces a foot, while overexposure reduces sidewall angle and creates a wide top. The processing window is therefore narrower for LDI than for collimated UV-A contact printing, particularly when line widths are below 60 µm.

    When the ETEC resist must be stripped from copper after pattern plating

    Stripping is performed after etch or after pattern plating using 2–4 wt% sodium hydroxide at 45–55 °C for 30–60 seconds in a spray stripper. The exposed resist swells and fragments under caustic attack; the fragments are removed by subsequent spray rinses. Stripping failure on production lines is often caused by insufficient swelling time or low stripper temperature. The exposed resist network is crosslinked; caustic stripping works by hydrolysis of ester linkages and ionization of acid groups. At 45–55 °C, the resist swells and loses adhesion, allowing the spray to remove fragments. At temperatures below 40 °C, swelling is too slow and the resist may leave a smeared film that is not visible until after solder mask. The strip bath is replenished based on dissolved solids or pH; a spent bath with pH below 12.5 can increase stripping time beyond 60 seconds and leave residue. Complete stripping is verified by backlight inspection at 100× magnification. The film is also supplied with a cover sheet that must be removed before lamination; the cover sheet peel force is specified to allow automatic removal on hot-roll laminators without tearing.

    Storage and handling impose additional constraints not typically listed in short-form product literature. The film is sensitive to white light and UV; it must be stored in light-tight packaging in a darkroom under safe-light conditions. Relative humidity above 60% at the lamination area can produce moisture entrapment at the copper/resist interface, leading to bubbles during development; panels should be pre-dried at 60–80 °C for 20–30 minutes when ambient humidity exceeds 60%. The recommended room temperature for lamination is 20–24 °C. If the film is stored at low temperature, a conditioning period of 4–6 hours at room temperature is required before opening the sealed package to prevent condensation. Users should avoid combining the resist with amine-containing surface treatments immediately before lamination, because amine residues can prematurely neutralize carboxyl groups and reduce the development clearing of unexposed areas.

    Compliance with international environmental requirements is anchored to the RoHS Directive 2011/65/EU as amended by (EU) 2015/863. Eternal’s manufacturing sites operate under ISO 9001:2015 quality management and ISO 14001:2015 environmental management registration. Material safety data sheets should be consulted for developer, stripper, and rinse water handling; the diluted carbonate developer is alkaline and requires pH neutralization before discharge. Because the dry film is photopolymer-based, disposal of unused film is typically managed as non-halogenated solid waste, but local regulations may require waste code classification.

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