| HS Code | 189212 |
| Property 1 | Product Name: PCB Developer (TOK TSMR-8900 Matching Developer) Electronic/EL Grade |
| Property 2 | Product Type: Photoresist Developer |
| Property 3 | Application: Development of TOK TSMR-8900 positive photoresist in PCB and electronic device fabrication |
| Property 4 | Compatible Resist: TOK TSMR-8900 positive photoresist |
| Property 5 | Grade: Electronic/EL grade for high-purity processing |
| Property 6 | Chemical Composition: Aqueous tetramethylammonium hydroxide (TMAH) solution |
| Property 7 | Active Ingredient: Tetramethylammonium hydroxide (TMAH) |
| Property 8 | Active Ingredient Concentration: 2.38 wt% TMAH |
| Property 9 | Appearance: Clear colorless liquid |
| Property 10 | pH: Approximately 13 |
| Property 11 | Specific Gravity: Approximately 1.00 at 20°C |
| Property 12 | Metal Impurity Level: Controlled to trace levels suitable for electronic/EL grade |
| Property 13 | Filtration: Sub-micron filtered for particle removal |
| Property 14 | Storage Temperature: 20 to 25°C recommended |
| Property 15 | Shelf Life: Typically 6 to 12 months under recommended storage conditions |
| Property 16 | Manufacturer: Tokyo Ohka Kogyo Co., Ltd. (TOK) |
As an accredited PCB Developer (TOK TSMR-8900 Matching Developer) Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in 1-liter amber HDPE bottles, TOK TSMR-8900 matching developer is an electronic/EL grade PCB developer for precision processing. |
| Container Loading (20′ FCL) | 20′ FCL loaded with electronic-grade PCB Developer TOK TSMR-8900, packed in sealed containers, secured, and labeled for safe transport. |
| Shipping | This chemical ships in UN-approved containers, strictly compliant with hazardous materials regulations. Ground transport only; no air freight. Requires proper labeling, safety data sheets, and temperature-controlled handling to prevent degradation. Ensure secure packaging, spill containment, and clear marking for corrosive/flammable properties. Signature required upon delivery. |
| Storage | Store TOK TSMR-8900 Matching Developer in its original, tightly sealed container in a cool, dry, well-ventilated area away from direct sunlight, heat, acids, and oxidizers. Keep storage temperature stable (typically 10–30°C) and protect from freezing. Ensure proper labeling, secondary containment, and restricted access to authorized personnel only. |
| Shelf Life | Shelf life is typically 6 months from manufacture when stored unopened at 20-25°C, away from light and heat. |
In high-density interconnect PCB fabrication, the TOK TSMR-8900 matching developer is introduced into a conveyorized spray module immediately after laser direct imaging of positive-tone dry-film photoresist. The developer is an aqueous alkaline formulation based on tetramethylammonium hydroxide, used where sodium-free processing is required for high-frequency dielectric materials and fine-line interconnects. Bath make-up is adjusted by acid-base titration to 0.250 N to 0.280 N, with pH held between 13.1 and 13.5 at 25 °C; dilution water meets ASTM D5127-13 Type E-1 and exhibits resistivity not less than 18.2 MΩ·cm at 25 °C. The spray chamber is operated at 28 °C to 32 °C, with nozzle pressure from 1.2 kg/cm² to 1.8 kg/cm² and breakpoint maintained at 45% to 55% of chamber length; this breakpoint window prevents under-development residue in blind vias while avoiding over-development of fine trace edges. Replenishment is bleed-and-feed, with 5–10 L of fresh developer per 100 m² of processed panel area and a continuous 0.45 µm polypropylene filtration loop to remove resist sludge. Non-rinse residues are controlled by air-knife pre-rinse and double cascading DI water rinse at 1.5–2.0 kg/cm². The resulting boards are qualified under IPC-6012E Class 3 and inspected per IPC-A-600K; terminal products include high-layer-count smartphone mainboards and wearable-device flex-rigid boards with 40 µm to 60 µm line/space features.
Because the electroplating mold must retain a vertical sidewall after 25–50 µm thick positive-tone photoresist is patterned, copper pillar bump processing imposes a narrow development window. The developer is puddle-applied on a wafer track or immersion-tank system with temperature controlled at 22 °C to 24 °C; higher temperatures accelerate surface attack and produce undercut at the resist-substrate interface. Working normality is typically 0.261 N (2.38 wt% TMAH equivalent) and is verified every 4 h by automated titration against 0.100 N hydrochloric acid. A pre-wet step with nitrogen-purged ultrapure water prevents gas bubble adhesion in high-aspect-ratio vias with diameters from 20 µm to 100 µm. Development time is endpoint-driven rather than fixed; endpoint is detected by laser reflectometry or optical contrast at 60% to 70% clear-through, followed by a timed over-develop of 15 s to 30 s. The process conflict centers on footing: insufficient over-develop leaves a resist scum at the base of the via and blocks seed-layer wet etch, while excessive over-develop erodes the critical dimension by 1–3 µm. Rinse is performed with chilled UPW at 18 °C and a final spin-dry with 0.1 µm filtered nitrogen. Because copper pillar electroplating is sensitive to metallic contamination, the developer is supplied as electronic/EL grade with transition metal cations controlled below 10 µg/L per element, verified by ICP-MS with 10× preconcentration. Terminal products are flip-chip copper pillar interconnects on advanced logic and memory packages, where post-plating metrology for pillar height and coplanarity follows the wafer foundry internal specification.
| Segment | Developer normality | Temperature | Process mode | Particle or impurity limit | Terminal product |
|---|---|---|---|---|---|
| HDI PCB dry-film patterning | 0.250–0.280 N | 28–32 °C | Conveyorized spray | 0.45 µm filtration loop | Smartphone mainboards, wearables |
| Copper pillar bump | 0.261 N | 22–24 °C | Puddle/immersion with endpoint | Transition metals <10 µg/L | Flip-chip Cu pillars |
| Redistribution layer | 0.250–0.275 N | 21–23 °C | Double-puddle spin | <100 counts/mL at 0.1 µm | Fan-out RF/PMIC packages |
| IC substrate fine-line etch | 0.260 N ± 0.010 N | 30 °C ± 1 °C | Segmented spray manifold | 0.22 µm depth filter, 1 µm bag | Flip-chip BGA substrates |
| MEMS thick-film structuring | 0.230–0.250 N | 23 °C ± 0.5 °C | Immersion with megasonic | <500 particles/mL at 0.2 µm | Microfluidic chips, sensors |
| Gold bumping | 0.255 N ± 0.005 N | 21–22 °C | Triple-puddle | 0.05 µm point-of-use | Gold-bumped driver ICs |
During redistribution layer formation for fan-out wafer-level packaging, the developer is delivered as a puddle on a spin-coater cup after exposure of a liquid positive-tone photoresist. The bath is maintained at 0.250 N to 0.275 N with temperature at 21 °C to 23 °C. Because the RDL seed layer is exposed after development, the developer must not introduce mobile ions that would cause under-bump metallization corrosion; sodium and potassium are each held below 5 µg/L, sulfate below 20 µg/L, and chloride below 10 µg/L, with particle counts below 100 counts/mL at 0.1 µm threshold. The process sequence is a double-puddle: first puddle for 40 s, spin off at 800 rpm, second puddle for 20 s, then DI water rinse at 500 rpm with resistivity monitored at 18.2 MΩ·cm. The rinse water is oxygenated to 0.5–1.0 ppm dissolved ozone to oxidize surface organic residues and reduce redeposition on the exposed copper. The photoresist thickness is typically 6–10 µm for line/space patterns of 8/8 µm to 15/15 µm, and the developer over-etch is controlled by endpoint trace on the resist film thickness. The developed RDL pattern is then descummed in a downstream oxygen plasma prior to electroplating. Batches are run in an ISO 14644-1 Class 5 cleanroom with relative humidity below 50% to prevent amine uptake and surface inhibition. Terminal products include fan-out packages for power management and radio-frequency transceivers where fine-pitch copper traces replace wire bonds.
For build-up substrates and thin-core IC package carriers, positive-tone etch resist is developed in a horizontal conveyorized chamber with a segmented spray manifold. The developer feed is temperature-controlled at 30 °C ± 1 °C and delivered through oscillating fan nozzles at 1.0–1.5 kg/cm²; the bath normality is held at 0.260 N ± 0.010 N by conductivity-adjusted replenishment. Sodium-free chemistry is essential because the surface finish later includes electroless nickel/immersion gold or electroless palladium immersion gold, and residual metal ions degrade wire-bond pull strength. The breakpoint is measured by colorimetric dye dissolution and is set at 50% of the final spray zone; a second-stage rinse bank floods the panel with DI water at 1.8–2.0 kg/cm² within 10 s of development to arrest the alkaline reaction. The recirculation loop includes a 0.22 µm depth filter and a bag filter of 1 µm to remove resist particles larger than 1 µm before they can redeposit in fine-pitch traces. The substrate line/space target is 20/20 µm to 35/35 µm on ABF film or solder mask defined pads. Process control follows IPC-TM-650 Test Method 2.3.25 for ionic cleanliness and resist development residue detection; final substrates are inspected per IPC-A-600K. Terminal products include flip-chip ball grid array substrates and multi-chip module carriers.
| Control parameter | Method or standard | Limit | Applicable segment |
|---|---|---|---|
| Dilution water resistivity | ASTM D5127-13 Type E-1 | ≥18.2 MΩ·cm at 25 °C | All |
| Cleanroom classification | ISO 14644-1 | Class 5 | RDL, gold bump |
| Bath pH | ASTM E70-19 | 13.1–13.5 at 25 °C | HDI, IC substrate |
| Transition metals | ICP-MS 50× preconcentration | <10 µg/L total | Advanced packaging, gold bump |
| Liquid particle count | Liquid-borne particle counter 0.1 µm threshold | <100 counts/mL | RDL |
| Ionic cleanliness | IPC-TM-650 2.3.25 | Pass per IPC-6012E Class 3 | HDI, IC substrate |
| Resist residue | Visual inspection per IPC-A-600K | No scum or foot | HDI, IC substrate |
MEMS structures built with thick positive-tone photoresist demand low-metal-ion development because mobile cations alter the stiction profile of released silicon microstructures. The developer is used in an immersion tank with megasonic agitation at 3–5 W/cm² and temperature maintained at 23 °C ± 0.5 °C. Bath normality is set at 0.230 N to 0.250 N to moderate dissolution rate for resist thicknesses of 30–80 µm; higher normality generates excessive sidewall attack and reduces the mechanical integrity of the mold. A small amount of nonionic surfactant, typically 0.05–0.10 vol%, is added only if bubble entrapment is observed in channels with aspect ratios above 4:1. The development time is determined by optical endpoint spectroscopy and is usually 180–360 s for a 50 µm film, with an over-develop of 10–20 s to clear residual scum at the bottom of trenches. Rinsing uses two cascading baths: first a recirculated quick dump rinse at 20 °C for 60 s, then a final overflow rinse with UPW resistivity 18.2 MΩ·cm for 120 s. Particle counts in the developer bath are monitored by a liquid-borne particle counter at 0.2 µm sensitivity; action limit is 500 particles/mL. Terminal products include microfluidic chips, inertial sensors, and acoustic resonators where the developed photoresist is subsequently used as a sacrificial layer or electroplating mold for gold and nickel structural layers.
For gold bumping on display driver ICs and chip-on-glass packages, the matching developer is dispensed through a point-of-use filtration cartridge rated at 0.05 µm and mixed with inline nitrogen blanketing to keep dissolved oxygen below 0.5 ppm; this minimizes oxidation of exposed copper seed layers prior to gold electroplating. Bath normality is controlled at 0.255 N ± 0.005 N, with temperature at 21 °C to 22 °C, because the gold bump mold must retain a top opening larger than 15 µm after 20–40 µm thick resist patterning. The process uses a triple-puddle sequence with 15 s spin-off intervals; endpoint is confirmed by visual inspection under amber light after a timed over-develop of 10 s to 15 s. Post-development rinse uses ultrapure water at 18.0 MΩ·cm minimum and is followed by isopropyl alcohol vapor dry in a closed chamber to prevent water marks in deep vias. The developer is qualified against a low-alkali specification: sodium and potassium individually below 2 µg/L, calcium below 5 µg/L, iron below 5 µg/L, and total transition metals below 10 µg/L, determined by ICP-MS with 50× preconcentration and reported on each lot certificate. Terminal products are gold-bumped driver ICs and chip-on-glass modules used in flat-panel display and automotive instrument clusters.
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The product designated PCB Developer (TOK TSMR-8900 Matching Developer) Electronic/EL Grade is a metal-ion-free aqueous alkaline developer formulated specifically for use with the TOK TSMR-8900 photoresist series in printed circuit board and advanced packaging lithography. It is supplied as a ready-to-use tetramethylammonium hydroxide solution; the active concentration is normally expressed as 2.38 wt% TMAH, corresponding to approximately 0.261 N at 25 °C. The Electronic/EL Grade designation indicates that the product is processed to control trace metal contamination, particulate burden, and organic residue for fine-line and high-density interconnect applications. The formulation functions as a matched developer: its normality tolerance, surfactant package, and low-quaternary-ammonium residue profile are designed to produce a reproducible development endpoint, low scum, and controlled resist undercut for TSMR-8900 films. Direct substitution with a generic 2.38% TMAH developer may alter breakpoint, sidewall angle, and linewidth bias because lot-to-lot normality tolerance, buffering behavior, and additive content are not equivalent. The product is not a general-purpose carbonate developer and should not be used where sodium carbonate processes are specified without requalification.
Electronic/EL Grade developers of this class are filtered through submicrometer cartridges at packaging, typically 0.2 µm or 0.1 µm, and are analyzed for sodium, potassium, calcium, magnesium, iron, copper, zinc, and chloride. The absence of sodium and potassium species is significant for PCB reliability: residual hydroxyl-alkali metal compounds can contribute to electrochemical migration and surface insulation resistance degradation under humid bias. Conformance is commonly assessed against SEMI C8 for photoresist developer quality and by ICP-MS using EPA Method 200.8 for trace metals, with electronic-grade water meeting ASTM D5127-13 Type E-1 used for final dilution and rinsing. Final rinse compatibility is critical; after development, deionized water quality directly affects ionic cleanliness measured by IPC-TM-650 2.3.25.
Bath stability is governed by atmospheric carbon dioxide uptake, evaporation, resist loading, and equipment-derived contamination. When TMAH solutions are exposed to air, carbon dioxide absorption produces tetramethylammonium carbonate and bicarbonate species, which reduce free hydroxide concentration and depress titration normality even though total organic base concentration appears stable. This leads to a gradual increase in clearing time and a shift in critical dimension if compensation is performed by time alone. For closed-loop or recirculating development equipment, nitrogen blanketing of storage tanks and use of CO₂-scrubbed make-up air on spray modules are necessary when bath life beyond 24 h is required. Particle generation in TMAH developers is primarily associated with resist polymer precipitation, carbonate salt formation, and microbial growth. Because TMAH is strongly alkaline, microbial growth is generally suppressed; however, organic by-products from resist dissolution can agglomerate. Filtration through 0.5 µm or finer filter cartridges in the recirculation loop is recommended, and daily particle counts should be logged with a liquid particle counter.
Representative acceptance criteria for TMAH-based electronic-grade developers are shown below. Lot-specific values appear on the certificate of analysis; the values in the table should not replace the manufacturer’s release documentation.
| Property | Representative acceptance criterion | Test method or equipment |
|---|---|---|
| TMAH concentration | 2.38 wt% ± 0.02 wt% | Acid-base titration with 0.1 N HCl |
| Normality at 25 °C | 0.261 N ± 0.002 N | Calculated from titration and density |
| Density at 25 °C | 1.010 g/mL ± 0.005 g/mL | ASTM D891 |
| pH at 25 °C | > 13.2 | Calibrated pH electrode |
| Appearance | Clear, colorless to pale straw | Visual inspection |
| Total trace metals | ≤ 50 µg/L | ICP-MS per EPA Method 200.8 |
| Sodium and potassium, each | ≤ 5 µg/L | ICP-MS per EPA Method 200.8 |
| Iron, calcium, magnesium, copper, each | ≤ 5 µg/L | ICP-MS per EPA Method 200.8 |
| Chloride, nitrate, sulfate, each | ≤ 0.5 mg/L | Ion chromatography with conductivity detection |
| Particle count ≥ 0.5 µm | ≤ 100 particles/mL | Liquid particle counter |
| Particle count ≥ 0.2 µm | ≤ 200 particles/mL | Liquid particle counter |
| Dissolved organic carbon | ≤ 50 mg/L | UV/persulfate oxidation |
| Storage temperature | 15–25 °C | Temperature logger |
| Shelf life | 12 months from manufacture in sealed original container | Manufacturer’s certificate of analysis |
Development mode changes hydrodynamic boundary-layer conditions, which is particularly important for fine-line pattern plating and blind microvia resists. In immersion processing, development rate depends on diffusion of dissolved resist away from the surface; agitation and dissolved oxygen can produce nonuniform endpoint near dense patterns. For fine-line work, spray development on a conveyorized module with 0.08–0.15 MPa nozzle pressure and 30–60 s residence time is usually preferred because impingement flow reduces resist residue in narrow spaces. The matching developer is compatible with both modes, but requalification of development time and linewidth bias is required when changing from immersion to spray. In puddle development on cup-type track systems, a starting dispense volume of 2–3 mL per 100 mm × 100 mm panel and 23 °C puddle temperature are typical process starting points; however, published data for this specific configuration is limited, and the response of TSMR-8900 to puddle development should be verified with a focus-exposure matrix.
Process control for the TSMR-8900 matching developer is based on three measurement axes: normality by titration, particle count by liquid particle counter, and trace metals by ICP-MS. Normality should be measured before the first shift after 1 h of bath equilibration at process temperature. Titration is performed with 0.1 N hydrochloric acid to a potentiometric endpoint; the result is expressed as weight percent TMAH or normality. The temperature correction for density and normality must be applied if the bath is not at 25 °C. A drop in normality without corresponding evaporative volume loss indicates CO₂ absorption or reaction with resist loading. Particle counting should be performed on a quiescent sample drawn from the recirculation loop with a laser particle counter calibrated at 0.5 µm and 0.2 µm; count increases above baseline indicate filter breakthrough, precipitation, or contamination. Trace metal panels are typically run weekly on production baths because metal contamination accelerates resist cracking and changes surface charge. For high-layer-count boards, copper, iron, and tin are the most relevant metals because they can be released from panel handling equipment.
Development endpoint is best established with a clearing-time coupon using the production exposure tool. At the qualified exposure dose, the time required to completely clear unexposed or dark-field regions is recorded; the production develop time is then set at 1.2–1.5 times that clearing time. If the clearing time shifts by more than 10% at a stable exposure dose, the bath is outside its qualified range. Linewidth bias and sidewall angle should be verified by cross-sectional SEM on a daily or lot basis, depending on feature size. The development attack rate depends on resist post-exposure bake, exposure dose, and developer normality; changes in any of these variables propagate to critical dimension. This product is not designed to compensate for significant exposure or bake drift by developer time adjustment alone.
After development, a two-stage cascade rinse is recommended. The first rinse removes bulk developer; the second rinse uses fresh deionized water. Final rinse water quality should be monitored by resistivity at 18.0 MΩ·cm at 25 °C or better. Incomplete rinsing can leave quaternary ammonium hydroxides on the resist surface, which later release corrosive residues under humidity. Spin drying or air-knife drying at 50–60 °C is used; higher temperatures may soften or degrade certain resist films. Published data for this specific configuration is limited, so drying profiles should be validated by adhesion and pattern quality inspection.
The product differs from sodium carbonate developers in cation composition, residue profile, and process temperature. Sodium carbonate solutions, typically 0.8–1.2% w/v Na₂CO₃, operate at 30–40 °C and leave sodium-containing residues that can degrade electrical insulation resistance unless removed by aggressive rinse. The TSMR-8900 matching developer is formulated as a quaternary ammonium hydroxide developer and is supplied at 0.261 N normality at 25 °C for lower-temperature, finer-pitch processing. Compared with generic 2.38% TMAH, the matched product controls normality to a narrower tolerance, reduces particulate release from the developer itself, and is qualified for a specific resist surface interaction. Generic electronic-grade TMAH may still produce acceptable results, but batch-to-batch variation in surfactant content or low-level organic impurities can shift the development endpoint. The table below summarizes process-critical differences. Published data for this specific configuration is limited beyond the manufacturer’s application notes; the comparison represents general process engineering observations.
| Process parameter | TSMR-8900 matching developer | Generic 2.38% TMAH | Sodium carbonate developer |
|---|---|---|---|
| Active chemistry | TMAH | TMAH | Na₂CO₃ |
| Typical concentration | 2.38 wt% TMAH; 0.261 N at 25 °C | 2.38 wt% TMAH; 0.261 N at 25 °C | 0.8–1.2% w/v Na₂CO₃ |
| Typical process temperature | 20–23 °C | 20–23 °C | 30–40 °C |
| Metal ion contamination risk | Low; electronic-grade limits | Variable; depends on chemical grade | High sodium |
| Residue after rinse | Low for matched resist | Low to moderate | Sodium residue if rinse is inadequate |
| Fine-line compatibility | Designed for TSMR-8900 | Process dependent | Limited |
| Bath maintenance | Normality titration, particle count, trace metals | Normality titration, particle count | pH, carbonate titration, sodium buildup |
| Wetted materials | 316L stainless steel, PVDF, PTFE, polypropylene | 316L stainless steel, PVDF, PTFE, polypropylene | Similar; sodium carbonate may be more aggressive to aluminum |
Storage should be in sealed original containers at 15–25 °C; freezing or extended exposure above 30 °C may increase particle formation and reduce shelf life. Bulk storage tanks should be equipped with nitrogen blanketing or CO₂ scrubbers to prevent normality drift. Wetted materials should be 316L stainless steel, PVDF, PTFE, or polypropylene; avoid aluminum, brass, zinc, and galvanized steel because alkaline attack releases metal ions into the developer. The product must not be mixed with strong mineral acids or oxidizing agents; neutralization heat and possible release of trimethylamine from quaternary ammonium decomposition are safety hazards. Do not blend with amine-based additives or other developers without compatibility testing. Before disposal, spent developer should be neutralized under controlled conditions and handled according to local discharge permits.
TMAH is a corrosive alkaline material. Personnel handling should use chemically resistant gloves, face shields, and splash aprons; emergency showers and eye washes must be accessible. The product contains tetramethylammonium hydroxide, which is toxic by dermal and oral exposure and can cause severe burns. Spent developer should be segregated from acids and oxidizing agents. Ventilation should be adequate to control mist from spray development; local exhaust is recommended for conveyorized spray modules. The material safety data sheet and local chemical hygiene plan govern handling, not this document.
The developer is intended for liquid TSMR-8900 photoresist films; its application as a drop-in developer for dry-film photoresists or solder mask materials is not assured. Alkaline TMAH solutions can interact with exposed copper surfaces, particularly in long immersion cycles, causing cupric ion release and surface discoloration. In pattern-plating processes, the developer should be rinsed immediately after endpoint detection with deionized water meeting ASTM D5127-13 Type E-1 or better. Inadequate rinse or extended post-develop hold time before etch can lead to undercut and etch penetration under resist edges. For polyimide or flex circuits, the developer’s high pH may modify substrate surfaces; coupon qualification is required before full production. Because the product is a matched component of a two-part resist-developer system, process parameters from other TOK developers or other photoresist platforms should not be transferred without a new focus-exposure matrix and adhesion tape test per IPC-TM-650 2.4.1 or the equivalent.
