| HS Code | 359820 |
| Product | Particle Removal Cleaning Solution Electronic/EL Grade |
| Grade | Electronic/EL |
| Form | Liquid |
| Appearance | Clear, colorless, particle-free liquid |
| Primary Function | Removal of microscopic particles from semiconductor and electronic component surfaces |
| Chemical Composition | Ultrapure water, electronic-grade nonionic surfactant, and low-metal organic alkali |
| Particle Removal Efficiency | ≥99% for particles 0.1 µm and larger |
| Ph At 20 C | 10.5–11.5 |
| Specific Gravity At 20 C | 0.998–1.006 |
| Boiling Point | Approximately 100°C |
| Solubility | Fully miscible in water |
| Metallic Impurity Content | Each metallic element <0.1 ppb |
| Particle Content | ≤10 particles/mL at ≥0.1 µm |
| Filtration Rating | 0.1 µm and 0.02 µm membrane filtered |
| Shelf Life | 6 months from date of manufacture when unopened |
| Storage Conditions | Store sealed in clean, cool, inert-gas protected environment |
| Safety Profile | Minimally hazardous; avoid eye, skin, and prolonged inhalation contact |
As an accredited Particle Removal Cleaning Solution Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in a 1 L high-density polyethylene bottle with a tamper-evident cap, double-bagged in cleanroom-grade plastic for purity. |
| Container Loading (20′ FCL) | One 20-foot FCL loaded with Electronic/EL Grade Particle Removal Cleaning Solution, securely packed in drums per regulations, ready for shipment. |
| Shipping | Shipping for Particle Removal Cleaning Solution Electronic/EL Grade requires strict compliance with hazardous materials regulations. Use sealed, corrosion-resistant containers to prevent leaks and contamination. Ensure proper labeling, documentation, and temperature control. Avoid extreme heat or cold. Transport via ground or air freight only after confirming applicable chemical compatibility and safety data sheets are accessible to all handlers. |
| Storage | Store in a tightly sealed original container in a cool, dry, well-ventilated area, away from direct sunlight, heat, and incompatible materials. Keep container upright and protected from moisture and contamination. Maintain stable temperatures between 5–35°C (41–95°F) or per manufacturer specifications. Do not store near acids, oxidizers, or food areas. |
| Shelf Life | Shelf life is typically 12 months from manufacture date when stored sealed at room temperature, away from light and moisture. |
In front-end-of-line semiconductor manufacturing, post-chemical mechanical planarization wafers retain 30–150 nm ceria or fumed silica agglomerates mechanically pressed into oxide, tungsten, or copper damascene surfaces. The electronic/EL-grade particle removal cleaning solution is metered into a point-of-use ultrapure water stream at 0.5–2.0 vol% and supplied through 0.05 µm polytetrafluoroethylene membrane filtration. Addition ratios above 2.0 vol% reduce the dispersion stability margin because excess surfactant adsorption shifts the zeta potential of the wetted wafer surface toward the isoelectric point, increasing redeposition unless the final rinse is extended to 120 s per wafer. Process equipment includes single-wafer spin tools operating at 300–1,200 rpm, 0.8–1.2 MPa ultrapure water rinse nozzles, and 950 kHz–1.5 MHz megasonic transducers at 2–5 W/cm². Bath temperature is maintained at 22–25°C; sustained operation above 40°C accelerates surfactant thermal breakdown and produces organic residue transfer onto gate oxide surfaces. Compliance is assessed by SEMI C8 for liquid-borne particle counting, ISO 14644-1:2015 Class 3 for the point-of-use minienvironment, and SEMI S2 for equipment safety. Finished wafer types include logic devices at 28 nm node and below, 64–128 word-line-layer 3D NAND stacks, and copper/tungsten dual-damascene interconnects. The solution must not be pre-blended with hydrogen peroxide-based SC1 chemistry in the same day tank; pH shift beyond ±0.3 destabilizes dispersed particles into gel films that adhere to wafer edges and bevels.
| Standard or method | Parameter controlled | Production acceptance reference |
|---|---|---|
| SEMI C8 | Liquid-borne particle count in chemical supply | ≥0.1 µm: ≤ 100 counts/mL |
| ISO 14644-1:2015 | Airborne particle concentration at point of use | Class 3, 0.1 µm monitoring |
| ASTM F312-19 | Optical particle counter sampling validation | Sampled from 0.2 µm filtered line; background < 5 counts/mL |
| SEMI S2 | Equipment safety and exhaust capture | Captured drain with leak detection at point of use |
Published data for the exact dilution curve on sub-10 nm FinFET front-end-of-line process flows is limited; production qualification requires 3–5 batch cycles per wafer type to verify bath life and particle-count consistency before full integration into the wafer cleaning sequence.
TFT-LCD and OLED mother glass substrates acquire glass chips, edge-grinding debris, and 0.1–1.0 µm silica particles during cutting, grinding, and cleanroom transfer. The particle removal cleaning solution is blended at 0.8–2.5 wt% in ultrapure water at 30–38°C and delivered through horizontal spray conveyor systems containing 4–6 spray zones, 300–500 rpm polyvinyl alcohol brush scrubbers, and air-knife dryers. The recirculation loop passes through 0.04 µm polyethersulfone membranes and 5 µm pre-filters; in-line optical particle counters sample the supply line following ASTM F312-19 methodology. Production acceptance typically requires fewer than 10 particles larger than 0.3 µm per cm² before indium tin oxide sputter, low-temperature polysilicon deposition, or thin-film encapsulation. Compliance references SEMI D15 for liquid chemicals used in flat panel display manufacturing, ISO 14644-1:2015 Class 5 for the production cleanroom, and SEMI C8 for chemical-borne particle control. Terminal finished product types include amorphous silicon TFT-LCD modules, oxide TFT backplanes for high-refresh-rate displays, and OLED panels with multi-layer thin-film encapsulation. The cleaning bath must remain separated from indium gallium zinc oxide etch chemistry; residual fluoride ion carryover above 10 ppb from shared plumbing roughens the glass surface and increases post-anneal haze.
In flat-panel fabs, the cleaning stage is a bottleneck when conveyor speed exceeds 4 m/min because brush contact time falls below the threshold needed to dislodge particles embedded in the glass edge-bevel region. Process engineers therefore adjust the solution feed rate to maintain bath surface tension below 35 mN/m, measured by pendant-drop tensiometer at 25°C, while compensating for evaporation-driven concentration drift in the open recirculation tank.
Silicon photovoltaic cell processing after diamond wire sawing and alkaline texturing leaves 20–50 µm silicon fines, metal wire debris, and residual texturing bath salts on wafer surfaces. The particle removal cleaning solution is used in ultrasonic immersion and spray lines at 0.3–1.5 vol% in ultrapure water, with bath temperature controlled at 20–28°C and immersion time between 120–300 s. Ultrasonic transducers operating at 40–68 kHz with power density of 10–20 W/L dislodge particles from saw-damage-etched pyramids; overflow rinsing at 3–5 L/min per 100 mm wafer carrier prevents particle reattachment. The process boundary is defined by total organic carbon load before POCl₃ diffusion; residual carbonaceous films above 50 ppm degrade emitter uniformity and drive shunt resistance loss. Compliance is anchored to ISO 14644-1:2015 Class 6 for cell assembly areas, SEMI C8 for chemical-borne particle limits, and IEC 61215-1:2021 for downstream module performance validation. Finished cell types include p-PERC, n-type TOPCon, and heterojunction cells with indium tin oxide contact layers. Published data for this specific cleaning solution configuration in tunnel oxide passivated contact production lines is limited; transfer to new lines requires pilot-scale verification with 3–5 batches before full qualification.
Laser-drilled microvias and plasma-desmeared blind vias in high-density interconnect printed circuit boards retain carbonized epoxy residue and sub-10 µm glass fiber fragments before electroless copper deposition. The electronic/EL-grade cleaning solution is applied at 3–10 vol% in deionized water, heated to 35–45°C, and sprayed through flat-jet nozzles at 0.4–0.8 MPa in conveyorized surface preparation equipment. For assembled PCB defluxing, the same stock is diluted to 5–15 vol% and used in inline air-spray or ultrasonic reciprocaters with saponification time of 60–120 s depending on solder paste residue type. Ionic cleanliness is verified by IPC-TM-650 Method 2.3.25 resistivity of solvent extract, with acceptance below 1.56 µg NaCl equivalent/cm² for Class 3 electronics. Compliance includes IPC-CH-65B for cleaning process selection, IEC 61189-5 for cleanliness evaluation methods, and IPC-A-600J for internal board acceptance. Terminal products include HDI smartphone main boards, IC substrates with 20/40 µm line and space patterns, and flexible polyimide circuits with coverlay openings. The bath must not be shared with halogenated solvent systems or municipal deionized water containing chloride above 5 ppm; residual chloride increases electromigration risk in fine-pitch flip-chip assemblies.
Cleaning bath life in HDI lines is influenced by dissolved copper loading from previous microetch stages. At dissolved copper concentrations above 25 ppm, the cleaning solution shows reduced particle-removal rate and begins to deposit copper oxide stain on exposed inner-layer pads. Ion exchange bleed-and-feed operation maintains dissolved copper below 10 ppm and extends bath usability to 72 h under continuous production.
Alumina and diamond slurry residues in hard disk drive media manufacturing present a conflict between high-frequency particle dislodgement and surface damage control. The particle removal cleaning solution is mixed at 1–3 wt% in ultrapure water and used in multi-stage ultrasonic immersion tanks at 40–80 kHz with power density of 5–15 W/L. The downstream process follows a high-pH alumina polish with intermediate ultrapure water rinse; adding the cleaning solution into the rinse stage at 1.0–2.0 wt% reduces particle transfer to the final sputter coater by 2–3 orders of magnitude, though published validation data for specific media formats is limited. Bath temperature is held at 30–35°C; operation above 45°C lowers the ultrasonic cavitation threshold and increases pitting on electroless nickel-plated aluminum substrates. Final rinsing uses 0.05 µm-filtered ultrapure water and hot air knives at 60–70°C. Compliance is assessed by ASTM F312-19 for liquid-borne particle counting, SEMI C8 for chemical particle limits, and ISO 16232 for component cleanliness in precision mechanical production. Terminal products include 2.5-inch and 3.5-inch hard disk drive platters, heat-assisted magnetic recording media, and actuator head stack assemblies. Combination with amine-based pH adjusters must be avoided; rapid pH rise beyond ±0.5 precipitates dissolved aluminum species and forms agglomerates that are difficult to remove from recessed slider surfaces.
The ultrasonic field must be qualified with hydrophone mapping because standing-wave nodes inside the immersion tank generate low-energy zones where particle removal drops by more than 40% relative to tank average. Manufacturers insert sapphire witness coupons at fixed positions and measure residual particle counts by scanning electron microscopy after 300 s exposure to verify process uniformity before media lot release.
Roll-to-roll electrode coating lines for lithium-ion cells require particle-free 6–12 µm rolled copper foil and 10–16 µm aluminum foil before slurry coating. The particle removal cleaning solution is applied in a roll-to-roll spray module at 1–5 vol% in ultrapure water, delivered through 0.02 µm filtration, with spray pressure of 0.3–0.6 MPa and air-knife drying at 50–70°C. The process must maintain foil surface roughness change below 0.02 µm Rz because aqueous anode and cathode slurry adhesion depends on a controlled surface profile; excessive chemical etching creates uncoated islands and raises cell internal resistance. Compliance is based on ISO 14644-1:2015 Class 7 dry rooms, SEMI C8 for chemical particle limits, and IEC 62619:2017 for secondary cell safety during downstream validation. Terminal products include cylindrical 18650 and 21700 cells, prismatic cells, and pouch cells with nickel-rich cathode chemistries. The cleaning solution must not be recirculated across copper and aluminum foil lines without dedicated filtration; copper ion carryover above 1 ppm onto aluminum cathode foil creates galvanic corrosion pits that degrade slurry coating uniformity and reduce cell calendar life.
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Electronic/EL Grade particle removal cleaning solution is a high-purity liquid cleaning medium supplied for removal of submicron particles from semiconductor substrates, advanced package interposers, photomasks, and microelectromechanical systems before critical adhesion steps. The product is filtered at final fill through a 0.05 µm absolute-rated membrane and filled in an ISO 4 mini-environment. Lot-release data include liquid-borne particle counting by ASTM F51/F51M-21, trace metal analysis by ASTM D5673-16, nonvolatile residue by ASTM D1353-13, conductivity by ASTM D1125-23, pH by ASTM E70-19, and ionic contamination by IPC TM-650 2.3.28. The supplied designation is Electronic/EL Grade; the EL suffix identifies the electronic-grade particle removal formulation rather than a solvent-only semiconductor cleaner or an aqueous detergent blend. The product is a low-viscosity, near-neutral aqueous mixture with a density of 1.00 g/cm³ to 1.05 g/cm³ at 25 °C and a closed-cup flash point above 93 °C by ASTM D93-20. These properties allow use in open immersion baths without the flammability controls required for isopropyl alcohol or acetone. The lot-release specification controls sodium, potassium, iron, copper, aluminum, and zinc at <1 ppb each and total trace metals at <10 ppb. This distinction is relevant when cleaning exposed aluminum bond pads, copper pillars, or C4 bumps because alkali metal residues can shift wire-bond electrical performance and promote under-bump corrosion. The cleaning mechanism relies on wetting and dispersion rather than aggressive oxide etching. Dynamic surface tension is maintained in the 28 mN/m to 32 mN/m range at 25 °C to allow penetration into narrow saw kerfs and through-silicon via structures. The formulation contains no intentionally added amines, chelating agents, or aromatic hydrocarbon solvents, reducing the post-clean residue that would otherwise require a heated deionized-water rinse. In ultrapure-water rinsing, the solution is miscible in all proportions. For 200 mm and 300 mm single-wafer tools, a rinse resistivity return to 18 MΩ·cm within 30 s is used as an endpoint signal on conductivity-controlled spray processors.
Solvent-only electronic cleaners such as high-purity isopropyl alcohol or acetone remove nonpolar organic residues but exhibit limited particulate lifting from charged dielectric surfaces under low-flow immersion. Aqueous detergent blends can reduce surface tension and suspend particles but frequently leave sodium or surfactant films if not rinsed under controlled resistivity. The EL Grade occupies an intermediate position: it is a water-based semi-aqueous formulation with sufficient organic co-solvent to lower surface tension to 28 mN/m to 32 mN/m while retaining water-rinsibility. Lot-release data for the EL Grade are tighter than for general-purpose electronic cleaners. Particles at ≥0.2 µm are controlled to <25 particles/mL, particles at ≥0.5 µm to <5 particles/mL, and nonvolatile residue to <2 ppm. By comparison, solvent-only grades purchased without particle redistribution testing may contain >1000 particles/mL at ≥0.2 µm after container transfer. The difference matters in cleanroom operations because point-of-use filters on dispensing equipment have retention curves that shift with particle load. A cleaner with uncontrolled particle burden increases filter change frequency and creates a source of batch-to-batch defect variation.
| Cleaning medium | Particle count at ≥0.2 µm | Nonvolatile residue | Trace metal burden | Representative use environment |
|---|---|---|---|---|
| Reagent-grade isopropyl alcohol | >1000 particles/mL | >20 ppm | >100 ppb | General laboratory |
| High-purity semiconductor solvent | <100 particles/mL | <5 ppm | <10 ppb | Wafer backside and edge clean |
| Aqueous detergent blend | <500 particles/mL | <50 ppm | 50–500 ppb | Package substrate deflux |
| Electronic/EL Grade particle removal cleaning solution | <25 particles/mL | <2 ppm | <1 ppb per element | Semiconductor and MEMS particle removal |
In a 300 mm single-wafer spray processor with a 0.05 µm point-of-use filter, dispense flow should be maintained between 0.5 L/min and 1.5 L/min. At flows below 0.3 L/min, the liquid film becomes discontinuous at the wafer edge and re-deposited particles can remain in the exclusion zone. At flows above 2.0 L/min, aerosol formation increases and sprayback onto the wafer backside becomes detectable by particle inspection. Wafer rotation is typically set at 300 rpm to 1500 rpm; below 200 rpm, the liquid layer thickens and spray energy is attenuated before it reaches the substrate, while above 1800 rpm the fluid residence time is too short for consistent particle detachment. Contact time of 30 s to 120 s is used for ceramic polishing slurries, dicing debris, and metal-organic particles. The cleaning step is followed by ultrapure-water rinse at 18.2 MΩ·cm and spin dry under 0.1 µm filtered nitrogen. Production tools with conductivity monitoring use a rinse return to 18 MΩ·cm in less than 30 s as the endpoint; a longer return indicates incomplete removal of the cleaning solution, a fouled rinse line, or an exhausted point-of-use filter.
Batch immersion cleaning with the EL Grade is performed in 40 kHz ultrasonic or 0.8 MHz to 1.0 MHz megasonic baths. The choice of frequency is determined by feature geometry. Lower frequency produces larger cavitation bubbles and faster bulk particle removal, but increases the risk of edge damage to thin ceramic lids and fragile microstructures. Higher frequency yields lower cavitation intensity and more uniform acoustic streaming in 5 µm to 50 µm trenches. Megasonic transducer power density is controlled at 2 W/cm² to 5 W/cm². The bath is equipped with a recirculating filtration loop rated at 10 turnover volumes per hour through a 0.1 µm cartridge. Degasification to <2 ppm dissolved oxygen before cleaning reduces uncontrolled inertial cavitation and improves particle removal repeatability. When the solution is heated to 40 °C to 60 °C, viscosity decreases and particle detachment improves. However, pH drift above 7.5 during extended bath life indicates absorption of atmospheric carbon dioxide or ammoniated residues and requires replenishment.
The product is filled into 1 L, 5 L, and 20 L fluoropolymer containers or 200 L stainless steel ball-lock canisters for larger immersion tools. Final fill is performed through a 0.05 µm absolute-rated filter in an ISO 4 cleanroom. Container headspace is blanketed with 0.1 µm filtered nitrogen. Transfer into production tools must follow the tool manufacturer’s recommended purge procedure. Unpressurized decanting in an ISO 7 bay can increase particle counts in the dispense line by more than one order of magnitude. On a 200 L stainless steel canister with a 0.05 µm point-of-use filter, particle count at the dispensing nozzle was observed to rise from <10 particles/mL to >100 particles/mL at ≥0.2 µm when the canister was opened outside the cleanroom. The product should be stored at 5 °C to 30 °C and protected from UV light. The manufacturer assigns a 24-month closed-container shelf life; after opening, the product should be used within 30 days or verified by particle count before reintroduction into a critical cleaning loop.
| Parameter | Test method | Control limit |
|---|---|---|
| Particle count at ≥0.2 µm | ASTM F51/F51M-21 | <25 particles/mL |
| Particle count at ≥0.5 µm | ASTM F51/F51M-21 | <5 particles/mL |
| Total trace metals | ASTM D5673-16 | <10 ppb |
| Sodium, potassium, iron, copper, aluminum, zinc | ASTM D5673-16 | <1 ppb each |
| Nonvolatile residue at 105 °C | ASTM D1353-13 | <2 ppm |
| Chloride, nitrate, sulfate | IPC TM-650 2.3.28 | <0.2 ppm each |
| pH | ASTM E70-19 | 6.5–7.5 |
| Conductivity at 25 °C | ASTM D1125-23 | <20 µS/cm |
| Flash point, closed cup | ASTM D93-20 | >93 °C |
Published data for the use of this product on porous low-k dielectrics, metal-organic frameworks, and fragile photoresist adhesion layers is limited. Compatibility must therefore be verified on representative test coupons before full-wafer deployment. The product is not recommended for direct blending with strong oxidizing acids, chlorine-containing oxidizers, or quaternary ammonium hydroxide developers; exothermic mixing or phase separation may occur. The formulation is compatible with stainless steel, PTFE, PFA, and high-density polyethylene wetted surfaces, but prolonged contact with natural rubber or Buna-N seals can extract plasticizers and increase nonvolatile residue. In applications requiring an oxide-free copper surface under an inert atmosphere, the product is not a replacement for vacuum plasma etching or reducing-environment plasma cleaning. The operational boundary of the cleaning process is defined by the particle specification of the downstream deposition or bonding step. If defect inspection after cleaning shows particles at ≥0.2 µm above the tool baseline, the first corrective action should be replacement of the point-of-use filter element rather than an increase in chemical concentration.
For high-aspect-ratio through-silicon vias with aspect ratios above 10:1, penetration of the cleaning solution is mass-transfer-limited. Spray processing may not deliver sufficient fluid exchange at the via bottom. In such configurations, vacuum-assisted wetting or sequential soak and spin cycles are required. The use of megasonic energy in 1:10 aspect-ratio copper through-silicon via structures may induce copper grain boundary attack if the fluid pH drops below 6.0. Therefore, the bath must be monitored by in-line conductivity and pH rather than infrequent manual sampling. Compliance with SEMI C63-0718 and ISO 14644-1:2015 is applied to the rinsing water and cleanroom transfer environment, respectively, when the solution is integrated into production cleaning sequences.
