| HS Code | 819260 |
| Product Name | Negative PR Rinse Electronic/EL Grade |
| Grade | Electronic/EL |
| Physical State | Liquid |
| Appearance | Clear, colorless |
| Odor | Mild organic solvent odor |
| Chemical Nature | High-purity organic solvent rinse for negative photoresist processing |
| Water Content | ≤ 0.05% by weight |
| Boiling Point | 140 - 185 °C |
| Flash Point | 40 - 70 °C (closed cup) |
| Density At 20 C | 0.95 - 1.05 g/cm3 |
| Non Volatile Residue | ≤ 5 ppm |
| Metallic Impurities | Each metal ≤ 1 ppb |
| Solubility | Miscible with common photoresist solvents; low water solubility |
As an accredited Negative PR Rinse Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | High-purity Negative PR Rinse Electronic/EL Grade supplied in a 1-gallon HDPE bottle with secure closure for ultra-clean processing. |
| Container Loading (20′ FCL) | 20′ FCL: Drums/IBCs secured, inerted, and cushioned for Electronic/EL Grade negative PR rinse, ensuring contamination-free, safe transit. |
| Shipping | Negative PR Rinse Electronic/EL Grade is shipped as a high-purity electronic solvent. Transport requires sealed, static-resistant containers, temperature control, and moisture protection. It must be labeled as flammable/irritant if applicable, with documentation for cleanroom-grade materials. Use dedicated freight to prevent contamination, and follow hazardous material regulations for safe delivery. |
| Storage | Store in a tightly sealed original container in a clean, dry, well-ventilated area, away from direct sunlight, heat, sparks, and incompatible materials. Maintain a stable room temperature environment. Keep segregated from oxidizers and acids. Label clearly and ensure secondary containment to prevent spills. Avoid prolonged exposure to air to preserve electronic-grade purity. |
| Shelf Life | Shelf life is typically 12 months from manufacture date when stored tightly sealed at room temperature, away from light and moisture. |
In 300 mm logic wafer fabrication, the edge bead removal (EBR) sequence for negative-tone photoresist is performed on coater/developer track modules after spin coating and before post-exposure bake. The EL-grade negative PR rinse is delivered through a low-pressure EBR nozzle at 0.1 MPa to 0.3 MPa with a fan width of 0.8 mm to 1.2 mm positioned 1.0 mm to 2.0 mm from the wafer edge; dispense volume is 0.8 mL to 1.2 mL per wafer edge pass at 800 rpm to 1,200 rpm. Backside rinse follows at 1.5 mL to 3.0 mL, and spin dry is held at 2,000 rpm to 2,500 rpm for 20 s to 30 s. For negative resist films of 1.5 µm to 3.0 µm thickness, edge exclusion width is maintained at 1.0 mm to 2.5 mm; when ambient relative humidity exceeds 60%, the rinse is cut with n-butyl acetate at 15 wt% to 25 wt% to reduce condensation-related edge film lifting. The PGMEA-dominant rinse stream is characterized by viscosity of 1.1 mPa·s to 1.6 mPa·s at 25°C, surface tension of 27.0 mN/m to 28.5 mN/m, water content below 0.05 wt% by ASTM D1364-02(2012), and trace metal content below 10 ppb per element. Lot-release alignment with SEMI C25-0618 is used for incoming solvent purity, and track equipment is qualified under SEMI S2 safety evaluations. The downstream process continues through post-exposure bake, development, hard bake, etch, and strip; terminal product types include logic SoCs, DRAM, 3D NAND, and power management integrated circuits.
| Parameter | Test method or standard anchor | Acceptance criterion | Associated failure mode |
|---|---|---|---|
| Trace metals Na, K, Fe, Cu, Zn | SEMI C25-0618 via ICP-MS | ≤ 10 ppb per element | Gate oxide mobile ion contamination |
| Particles ≥ 0.2 µm | Liquid-borne particle counter calibrated per ISO 21501-1:2009 | ≤ 10 particles/mL | Post-exposure edge defects |
| Water | ASTM D1364-02(2012) Karl Fischer | ≤ 0.05 wt% | SU-8 swelling and crack formation |
| Nonvolatile residue | ASTM D1353-13 | ≤ 2 ppm | Display mura and mask printing defects |
Thick SU-8 negative photoresist structures used for electroplating masters and microfluidic mold inserts are developed in solvent-based developer, then transferred to EL-grade negative PR rinse before drying. On a 150 mm wafer, the rinse is applied as two static puddles of 3 mL to 6 mL each with 30 s residence, or through an immersion bath of 10 L to 15 L per 25-wafer batch with turnover after 50 wafers. The defining process limit is water: above 0.05 wt% by ASTM D1364-02(2012), the cross-linked epoxy network absorbs water and swells non-uniformly, producing sidewall cracks in features with aspect ratios above 10:1. Rinse temperature is controlled at 20°C to 23°C because higher temperatures accelerate solvent exchange at feature mouths faster than at bases, causing occlusion in trenches narrower than 10 µm. Ultrasonic agitation at 40 kHz and 40 W/L to 60 W/L is permitted only when adjacent feature spacing exceeds 50 µm; below that spacing, capillary oscillatory forces collapse high-aspect-ratio lines during extraction. Incoming metal levels below 10 ppb per element are required to prevent cation loading in electroplating baths. Downstream processing continues with hard bake at 150°C to 200°C, seed layer deposition, and nickel electroplating for mold replication. Terminal products include microfluidic master molds, inkjet nozzle plates, MEMS accelerometer proof masses, and polydimethylsiloxane replication tooling.
Fan-out wafer-level packaging lines that plate copper pillar bumps and redistribution layers use negative-tone photoresist with dry film thickness from 30 µm to 100 µm. After development, the EL-grade negative PR rinse removes residual photoreaction by-products from via surfaces before descum; the stream is dispensed at 2 mL to 4 mL per 200 mm wafer at 1,500 rpm to 2,000 rpm for 30 s to 45 s. For films above 60 µm, cyclohexanone is added at 10 wt% to 20 wt% to reduce drying rate and prevent skin-over blockage of solvent exchange at via mouths. The rinse is incompatible with water contamination above 0.05 wt% and with strong alkaline additives because the additives accelerate surface hydrolysis of epoxy-acrylate hybrid resists. Plasma descum follows with O2/CF4 at 80 W to 120 W for 20 s to 40 s, then Cu/Ni/SnAg electroplating is performed. Chemical purity is benchmarked against SEMI C25-0618, and final package materials are screened against RoHS Directive 2011/65/EU Annex II and REACH Annex XVII. Terminal product types include fan-out wafer-level packages, copper pillar bumped die, chip-last redistribution interconnects, and high-density bump arrays for mobile processors.
In GaN LED fabrication, negative photoresist is used as a sacrificial layer for metal lift-off; after Ni/Au or ITO evaporation, the resist template is removed in a solvent blend. The EL-grade negative PR rinse is charged at 75 wt% to 90 wt%, with N-methyl-2-pyrrolidone at 10 wt% to 25 wt% and a nonionic surfactant at 0.1 wt% to 0.3 wt%. The bath is held at 60°C to 70°C for 20 min to 40 min, with 40 kHz ultrasonic energy at 0.1 W/cm² to 0.3 W/cm². Penetration of the rinse through the metal edges is the rate-limiting step; the rinse blend is therefore formulated to maintain a Hildebrand solubility parameter near 9.5 cal^0.5 cm^−1.5 to swell the cyclized polyisoprene resist matrix without dissolving the metal adhesion layer. Water ingress above 0.05 wt% slows lift-off and leaves organic residue on the p-GaN contact interface. Metal contamination below 10 ppb per element by ICP-MS is necessary to avoid Schottky contact poisoning. Incoming solvent purity is benchmarked against SEMI C25-0618. Final LED die are evaluated under RoHS Directive 2011/65/EU, and the solvent system is assessed under REACH Annex XVII. Terminal product types include GaN-based blue and green LED chips, AlInGaP red LED chips, and VCSEL emitter arrays.
Gen 8.5 display panel photolithography uses slit-coated negative-tone photoresist for black matrix, photo spacer, and pixel definition layers with dried thickness of 1 µm to 5 µm. The EL-grade negative PR rinse is applied during the coating edge bead removal sequence through a linear nozzle array at 0.15 MPa to 0.25 MPa and 20 mL/m² to 40 mL/m², with panel edge rinse diluted to 60:40 by weight with PGMEA to reduce drying rate on large glass bodies. Nonvolatile residue is controlled below 2 ppm by ASTM D1353-13 because residues are imaged as black matrix mura after thermal curing at 230°C. Incoming purity is aligned with SEMI C25-0618, and finished panel components are screened under RoHS Directive 2011/65/EU and REACH Annex XVII. The process is incompatible with ambient humidity above 60% unless an air knife is used at the coating head. Terminal products include TFT-LCD panels, OLED backplanes, and quantum dot color filter plates.
Photomask and reticle fabrication with e-beam negative resists requires solvent streams with nonvolatile residue below 2 ppm and particles ≥ 0.2 µm below 5 particles/mL. The EL-grade negative PR rinse is dispensed at 1 mL to 2 mL per 152 mm mask blank in a multi-step spin sequence at 800 rpm to 1,500 rpm, followed by final dry at 2,000 rpm to 2,500 rpm. Isopropanol is added at 0 wt% to 5 wt% only when a more volatile final drying step is required for feature widths below 50 nm; higher IPA levels swell the edge of certain e-beam resists and produce line-edge roughness after chromium etch. Lot acceptance references SEMI C25-0618 for solvent purity and ASTM D1353-13 for nonvolatile residue. Downstream processing includes dry etching of chrome or molybdenum silicide, resist strip, and defect inspection. Terminal products include chrome-on-glass masks, attenuated phase-shift masks, and EUV mask blanks.
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Negative PR Rinse Electronic/EL Grade is a solvent-based rinse formulated for post-develop cleaning of negative-tone photoresist films, development by-products, and partially crosslinked resist scum in semiconductor lithography and advanced packaging lines. The product designation consists of the functional name, the resist polarity, and the Electronic/EL grade suffix; supplier packaging documentation uses this string without an additional numeric model identifier. The material is supplied through semiconductor chemical distribution channels in fluoropolymer-lined containers, with lot-level certificates of analysis covering assay, water content, particle burden, trace metals, and nonvolatile residue. The rinse is intended for cleanroom use in ISO 14644-1:2015 Class 5 or better environments and is dispensed through point-of-use filtration at the coating track.
Compared with general-purpose negative resist rinses sold for printed circuit board or flat-panel display applications, the Electronic/EL Grade imposes lower ceilings for mobile alkali and alkaline-earth ions, transition metals, halides, and sub-0.1 µm particles. General-purpose grades are frequently controlled only for gas chromatographic assay and acidity; electronic-grade shipments are screened by inductively coupled plasma mass spectrometry in accordance with EPA 6020 and ion chromatography for chloride, sulfate, nitrate, phosphate, and fluoride. Filtration through 0.05 µm rated media in a Class 5 cleanroom is applied during filling, and the product is packaged to minimise extractable metals. The tighter specification is relevant where the rinse dries on a wafer surface before subsequent plasma processing or metal deposition, because residual cations can migrate under electric field and alter device reliability.
Representative lot-release limits reported for this grade include sodium at ≤ 10 ppb, potassium at ≤ 5 ppb, iron at ≤ 10 ppb, and total trace metals at ≤ 50 ppb. Published data for this specific configuration is limited to supplier lot-release documentation; these values should be treated as representative electronic-grade organic rinse limits rather than universal solvent properties. Anion limits are specified as chloride ≤ 5 ppb, sulfate ≤ 10 ppb, and nitrate ≤ 10 ppb by ion chromatography. Water content is controlled to ≤ 0.3 % by Karl Fischer titration in accordance with ASTM D6304, and nonvolatile residue is limited to 5 mg/L to reduce post-dry surface haze. Particle counts at the 0.1 µm threshold are held to ≤ 100 particles/mL using an optical particle counter calibrated to ISO 21501-4:2018.
| Property | Test/control method | Electronic/EL Grade | General-purpose negative PR rinse |
|---|---|---|---|
| Particle count ≥0.1 µm | ISO 21501-4:2018 optical particle counter | ≤ 100 particles/mL | often not specified or > 1,000 particles/mL |
| Total trace metals | EPA 6020 ICP-MS | ≤ 50 ppb | typically > 500 ppb |
| Sodium | EPA 6020 ICP-MS | ≤ 10 ppb | not routinely controlled |
| Water content | ASTM D6304 Karl Fischer | ≤ 0.3 % | often ≤ 1.0 % or unspecified |
| Nonvolatile residue | gravimetric after evaporation | 5 mg/L maximum | not routinely specified |
| Filtration rating | membrane integrity test | 0.05 µm | 0.2 µm or unfiltered |
On a single-wafer spin develop track, Negative PR Rinse Electronic/EL Grade is applied after the developer rinse and before the final deionized water wash. The dispense step must overcome the low solubility margin of partially crosslinked negative resists: the material must remove unpolymerised resin from pattern floors without swelling the crosslinked photoresist sidewalls. Track recipes commonly set dispense flow at 10–100 mL/min through a 0.05 µm point-of-use barrier filter, with a dispense spin speed of 800–1,500 rpm and a spin-off step of 2,000–3,000 rpm. Low-energy defect inspection on 300 mm tracks has documented crescent-shaped residue at the wafer edge when nozzle sweep duty cycle drops below the coverage window; such residue is attributable to incomplete meniscus contact rather than insufficient solvent strength. The product’s low particulate burden reduces the number of add-on defects in the spray zone, but maintenance of suck-back valves and nozzle tip seating remains a production line variable.
Point-of-use filtration is not solely a quality step; it controls defect density because the rinse is dispensed directly onto patterned areas. The filter should be a membrane-rated 0.05 µm cartridge with PTFE or high-density polyethylene supports, and filter changes must be followed by a flush volume equal to at least 5 L/m² of membrane area to remove wetting-agent extractables. When the product is stored in pressurised canisters, a nitrogen headspace of 200–600 kPa is used; nitrogen purity should be ≥99.999 % to avoid oxygen and moisture ingress that can raise water content and reduce shelf stability. Inline particle sensors before the dispense nozzle have been used on production tracks to monitor particle excursions during filter start-up. If the point-of-use filter is not fully wetted, air slugs travel through the dispense line and cause intermittent spray pattern flutter at the wafer surface.
Storage and equipment compatibility limits are explicit. The product should be held at 15–25 °C in sealed original packaging, with a typical shelf life of 12 months from lot release. It must not be mixed with aqueous alkaline developers because the pH shift precipitates dissolved resist solids and raises defect density. Contact with strong oxidizers, including hydrogen peroxide above 10 % and sulfuric acid-based piranha solutions, is incompatible due to exothermic reactions and volatile decomposition products. Wetted dispense materials should be 316L stainless steel, PTFE, or perfluoroalkoxy alkane; brass, aluminium, and Buna-N elastomers are excluded from the flow path because extractables and solvent permeation can contaminate the rinse.
Negative-tone resists are widely used for lift-off profiles, micro-bump plating, thin-film head structures, and interposer features where pattern height-to-width ratios exceed 3:1. In these applications, the post-develop rinse contacts exposed metal pads, redistribution lines, or seed layers; if chloride or sulfate remain after drying, galvanic corrosion and adhesion loss may occur before the next wetting or plasma step. The Electronic/EL Grade reduces chloride to ≤ 5 ppb, sulfate to ≤ 10 ppb, and nitrate to ≤ 10 ppb. No single published SEMI standard defines every trace impurity limit for organic negative photoresist rinses, but the specified range matches the general lot-release practice of electronic-grade solvent suppliers for post-develop cleans. The product is not formulated as a post-etch residue remover; it does not contain chelating additives intended to dissolve metal-organic etch residues.
High-aspect-ratio features require careful meniscus control. The product’s surface tension is adjusted within a range typical of organic solvent rinses, but published vapor-liquid equilibrium data for this specific confidential blend is limited. Process engineering evaluations on 10:1 aspect-ratio test structures show that spin-off ramps above 3,000 rpm can increase pattern collapse due to capillary forces; the maximum spin-off speed is therefore qualified for each resist stack. Use of a low-rotation initial spin-off step of 300–600 rpm for 5–10 seconds reduces solvent pooling at the wafer edge before final drying.
The rinse is formulated to dissolve the non-crosslinked fraction of acrylic and epoxy-based negative-tone photoresist systems while avoiding attack on copper, aluminium, silicon dioxide, or silicon nitride surfaces. Process windows are narrow for semi-crosslinked resist films: contact times greater than 10 minutes can soften the patterned resist and degrade linewidth stability, while contact times below 20 seconds may leave scum in tight spaces. In single-wafer tracks, the recommended dispense-to-rinse interval is 20–60 seconds. In immersion tanks, the bath is recirculated through a 0.05 µm filter at a turnover rate of at least 3 bath volumes per hour to control particle accumulation. The vapour pressure and flash point differ from simple acetone or methyl ethyl ketone blends, so spin-bowl exhaust and solvent dryer setpoints must be adjusted to avoid condensed solvent film carry-over. Evaporation and water absorption must be monitored by density or Karl Fischer testing when the bath is operated in humid cleanroom locations.
| Process variable | Typical setpoint/range | Control method |
|---|---|---|
| Dispense contact time | 20–60 seconds | track recipe timer |
| Spin speed during dispense | 800–1,500 rpm | tachometer |
| Final spin-off speed | 2,000–3,000 rpm | accelerometer/tachometer |
| Immersion bath turnover | ≥3 bath volumes/hour | flow meter |
| Point-of-use filter rating | 0.05 µm | membrane integrity test |
| Storage temperature | 15–25 °C | warehouse data logger |
Negative PR Rinse Electronic/EL Grade is distinct from edge-bead removers and positive-resist developing rinses. Edge-bead removers are applied to the wafer periphery before or after develop and typically contain higher-vapour-pressure solvents to evaporate quickly, leaving minimal residue at the wafer bevel; the subject rinse is delivered across the full patterning surface. Positive-resist developer rinses are frequently aqueous or low-solvent formulations that stop the action of tetramethylammonium hydroxide-based developers, whereas the negative resist rinse must dissolve unexposed monomers and oligomers in solvent-rich areas without destabilising the crosslinked pattern. The Electronic/EL grade is also not equivalent to bulk photoresist strippers based on N-methyl-2-pyrrolidone, dimethyl sulfoxide, or strong amines; those materials remove heavily crosslinked resist after hard bake and require heated immersion or spray tooling. Equipment lines that switch from a bulk stripper to this rinse without changing bath filters, tank geometry, or dispense nozzles often carry over residual amine contamination, which can contribute to pattern lifting and must be flushed before lot qualification.
