| HS Code | 786802 |
| Product Name | Nanostripper Electronic/EL Grade |
| Grade | Electronic/EL Grade |
| Physical State | Liquid |
| Appearance | Clear, colorless to pale yellow liquid |
| Odor | Pungent acidic odor |
| Chemical Type | Stabilized sulfuric acid-hydrogen peroxide (SPM) stripper |
| Ph | < 1 |
| Specific Gravity | 1.60 to 1.70 at 20°C |
| Boiling Point | Approximately 110°C with decomposition |
| Flash Point | None |
| Solubility In Water | Fully miscible |
| Stability | Stable under recommended storage conditions; decomposes if contaminated or overheated |
| Typical Metals Content | ≤ 1 ppb each critical metal |
As an accredited Nanostripper Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Nanostripper Electronic/EL Grade is supplied in a sealed 1-gallon HDPE container, ensuring purity, safe handling, and stable shelf life for precision cleaning applications. |
| Container Loading (20′ FCL) | 20′ FCL loaded with palletized, secured drums/containers of Nanostripper Electronic/EL Grade, ensuring safe transport and handling. |
| Shipping | Nanostripper Electronic/EL Grade is transported in sealed, certified HDPE containers to preserve ultra-high purity. Containers are packed upright in sturdy outer cartons with absorbent padding and proper hazard labels. Standard ground freight is customary; protect from sunlight and extreme temperatures during transit. Consult the SDS for exact shipping classification. |
| Storage | Store Nanostripper Electronic/EL Grade in its original, tightly sealed container in a cool, dry, well-ventilated area away from direct sunlight, heat sources, and incompatible chemicals. Maintain stable temperatures, avoid moisture/condensation, and ensure secondary containment. Inspect containers regularly and follow manufacturer’s SDS for shelf-life and handling requirements. |
| Shelf Life | Shelf life is typically 12 months from manufacture date when stored sealed in original container at recommended room temperature. |
Photoresist films subjected to high-dose ion implantation at 1×10¹⁵ atoms/cm² or greater undergo surface carbonization to depths of 150–400 nm, forming a dehydrogenated crust that resists conventional solvent attack. Nanostripper Electronic/EL Grade addresses this condition through a formulated blend of polar aprotic solvents and quaternary ammonium hydroxide activators that solvate the carbonized layer at a measured etch rate of 0.8–1.4 μm/min at 70 °C in recirculated immersion baths equipped with 0.2 μm PTFE filtration membranes. The loading specification for production use typically falls within 1:1 to 1:3 dilution with deionized water having resistivity ≥ 18 MΩ·cm at 25 °C, though wafer-level tests on ion-implanted novolak resists indicate that undiluted operation maintains crust penetration efficiency above 85% for implant energies exceeding 80 keV. Process control parameters recorded on 200 mm wafer batch immersion tools reference a bath temperature window of 65–75 °C; excursion beyond 80 °C accelerates solvent volatilization and shifts pH upward through amine evaporation, compromising bath life. Metallic contamination is controlled to <10 ppb for Na, K, Fe, Cu, and Zn as verified by ICP-MS following SEMI F57-0301 test protocols. The stripping sequence for post-etch via chains in advanced logic devices typically requires 12–25 min immersion, followed by isopropyl alcohol rinse and N₂ blow-off at 0.34–0.48 MPa. End-product integration includes sub-65 nm node transistor gates, shallow trench isolation structures, and source-drain implant masking removal where crumble-free lift-off prevents particulate redeposition on high-aspect-ratio features.
Wafer-level packaging lines processing copper pillar bumps with 40–100 μm pillar height and 20–50 μm photoresist thickness demand stripping chemistries that remove crosslinked acrylic or epoxy-based resists without etching exposed copper, titanium seed layers, or solder caps. Nanostripper Electronic/EL Grade operates within a pH band of 11.2–11.8 at working temperature, which is sufficiently alkaline to cleave ester linkages in acrylic resists while remaining below the copper oxide dissolution threshold; electrochemical monitoring on patterned test wafers shows copper etch rates of <0.5 nm/min at 60 °C over 30-min exposure. The recommended bath formulation for this application is 80 vol% Nanostripper EL diluted with 20 vol% deionized water, maintained at 55–65 °C in a single-wafer spray processor with 1.0–1.5 bar nozzle pressure and 150–300 rpm wafer rotation. Throughput analysis on 300 mm lines indicates a process window of 8–15 min for complete resist dissolution at 25–40 μm film thickness; thicker films above 50 μm require either multiple dispense cycles or bath temperature elevation to 70 °C, though the latter reduces bath stability to approximately 8 h versus 24 h at 60 °C. Compatibility with electroplated copper pillars has been validated under JEDEC JESD22-A109 reliability preconditions, with no measurable undercut at pillar bases above 0.1 μm after 60-min dwell. End products include flip-chip ball grid array packages, fan-out wafer-level packages with 2/2 μm line/space redistribution layers, and copper pillar interconnects for high-density memory stacks. The stripper leaves no organometallic residue as confirmed by TOF-SIMS depth profiling on post-clean TiW seed layers.
Flat-panel display manufacturing processes for TFT-LCD and AMOLED substrates require removal of acrylic-based color filter resists and polyimide alignment layer residues from indium tin oxide surfaces. Nanostripper Electronic/EL Grade contains no aggressive oxidizers or fluorine-bearing species; this compositional constraint protects ITO sheet resistance stability, with measured change of <2% after 30-min immersion at 50 °C on Gen 8.5 glass substrates as evaluated by four-point probe per ASTM F1711-20. Dilution ratios in display fabs typically range from 1:1 to 1:5 with deionized water, with lower concentrations deployed for thin (1–3 μm) RGB color filter resists and higher concentrations reserved for black matrix or photo-spacer layers exceeding 5 μm. Process temperature is held at 40–55 °C in conveyorized spray chambers with 0.4–0.8 bar fan-spray nozzle arrays; residence time is set between 90–180 s depending on film thickness and crosslink density. A critical operational boundary is the exclusion of ultrasonic agitation above 40 kHz, which can induce micro-pitting on indium tin oxide grain boundaries, as documented by AFM surface roughness measurements exceeding Ra 2.5 nm. Stripping completeness is verified by contact angle measurement, with acceptance criterion set at <10° water contact angle on cleaned ITO; residual resist detection below 1 at% carbon by XPS is the standard lot release metric. End products include 4K/8K television panels, smartphone OLED displays, and automotive instrument cluster TFT modules, where alkali metal contamination must remain below 5×10¹⁰ atoms/cm² per SEMI F57 protocol.
MEMS acoustic sensor fabrication demands complete removal of thick SU-8 negative photoresist from silicon diaphragms and cavity structures without attacking aluminum bond pads or releasing sacrificial oxide layers. In this application, Nanostripper Electronic/EL Grade is typically prepared at a 1:2 dilution with deionized water and heated to 60–70 °C in a quartz immersion vessel fitted with gentle nitrogen sparging at 0.5–1.0 L/min to prevent localized thermal stratification. SU-8 films of 50–150 μm thickness, which exhibit crosslink densities exceeding 85% after UV exposure at 365 nm, require extended strip times of 30–60 min; mechanical assistance through low-frequency megasonic agitation at 0.8–1.2 MHz and power density 2–4 W/cm² reduces this interval by approximately 40% without compromising silicon membrane integrity. The formulation's absence of sodium hydroxide and potassium hydroxide is decisive for MEMS compatibility, as alkali metal residues on released cantilever structures cause stiction failures during accelerated lifetime testing per IEC 62047-22. Aluminum bond pad etch rate is held below 0.2 nm/min at 60 °C, verified by profilometry on sacrificial wafers; passivation nitride etch is below detection limits over 60-min exposure. End products include MEMS microphones, accelerometers, pressure sensors for tire-pressure monitoring systems, and microbolometer arrays for thermal imaging. Published comparability data for silicon-on-insulator wafer configurations processed with this exact formulation remains limited; qualification on device wafers is recommended before mass production.
Photomask fabrication for advanced lithography at 193 nm immersion and EUV wavelengths employs chemically amplified resists that leave halogen-containing residues along chrome sidewalls after dry etch. Nanostripper Electronic/EL Grade functions in this segment as a post-etch residue remover rather than a bulk resist stripper, applied in a 1:4 to 1:6 dilution at 35–45 °C in a puddle process on 6025 quartz substrates. The working solution produces an alkaline pH of 10.8–11.3, which hydrolyzes chlorinated and fluorinated polymer residues generated by chlorine/oxygen plasma etching without roughening the exposed quartz surface; atomic force microscopy on post-processed photomask blanks shows root-mean-square roughness of <0.3 nm over 5×5 μm scan areas. Puddle residence time is controlled between 60–120 s, with continuous refill from a 0.1 μm filtered recirculation loop to maintain homogeneous chemistry at the substrate surface; spin-off occurs at 800–1200 rpm followed by ultrapure water rinse to 18 MΩ·cm resistivity endpoint. Sulfate and chloride residual ion limits on completed photomasks are specified at <1×10¹¹ atoms/cm² per mask shop internal standards aligned with SEMI P39 defect density classifications. The absence of N-methylpyrrolidone in this grade eliminates solvent-related adhesion degradation of pellicle frames, a failure mode observed after repeated stripping cycles with conventional formulations. End products include binary and phase-shift photomasks for sub-28 nm logic nodes, DRAM contact layer masks, and EUV multilayer reticles where absorber sidewall cleanliness directly impacts critical dimension uniformity across the exposure field. Batch-to-batch viscosity variation of the concentrate is specified at ±5% of nominal 12–18 cP at 25 °C, which stabilizes puddle thickness during spin application.
Rigid and flexible PCB production lines use Nanostripper Electronic/EL Grade as a substitute for sodium hydroxide and monoisopropanolamine-based strippers where copper trace widths fall below 25 μm and etch factor control dominates yield economics. The formulation strips aqueous-processable dry-film resists at a concentration of 3–6 wt% active solids in deionized water, operating at 45–55 °C in spray conveyor systems with 0.6–1.2 bar nozzle pressure and 1.5–2.5 min conveyor dwell. Copper dissolution under these conditions measures <0.1 mg/cm²·h at 50 °C, a value that sustains trace width tolerance of ±5 μm on 18 μm copper foil. Liquid photoimageable resists, typically of acrylate-epoxy hybrid composition, require slightly higher working concentrations of 7–10 wt% and temperatures of 50–60 °C for comparable strip times. The rinse sequence following stripping comprises two cascading deionized water stages and one air-knife drying stage at 0.4 MPa; residual pH on board surfaces must return to 6.5–7.5 before oxide coating or solder mask application. Halide content is limited to <5 ppm chloride and <2 ppm bromide in the concentrate, a specification that prevents ionic contamination failures during IPC-TM-650 method 2.3.25 resistance of solvent extract testing. End products include high-density interconnect substrates, flexible printed circuits for wearables and camera modules, and automotive LED lighting boards where alkaline stripper residues degrade wire-bond adhesion. Stripping bath life in continuous PCB lines extends to 48–72 h at 12–15 m²/L loading, after which viscosity rise and suspended resist particle accumulation above 500 mg/L necessitate bath replacement.
Electroluminescent display backplane manufacturing deposits insulator and phosphor layers over patterned indium tin oxide on flexible polyethylene terephthalate or heat-stabilized polyethylene naphthalate substrates. Photoresist removal following wet-etch patterning of transparent conductive traces uses Nanostripper Electronic/EL Grade at a 1:3 dilution, held at 35–40 °C — a temperature ceiling imposed by PET dimensional stability limits of ±0.1% shrinkage at 150 °C glass transition onset, not by stripper chemistry. The low-temperature operation necessitates extended immersion times of 3–5 min in dip tanks with gentle panel oscillation at 10–15 cycles/min; spray processing is avoided due to web tension variations on roll-to-roll conveyors. Cathodic delamination tests conducted per ASTM B117 salt spray exposure on post-strip test coupons show no oxide undercutting along trace edges after 96 h. The stripper leaves a native oxide on indium tin oxide surfaces that is subsequently removed by a 0.5% citric acid rinse at room temperature before dielectric screen printing. End products include thin-film electroluminescent lamps for automotive dashboard backlighting and keypad illumination, where the total panel thickness is constrained below 0.3 mm and optical transmission through the ITO layer must remain above 88% per ASTM D1003. The grade's low metal impurity profile — <1 ppb total heavy metals by ICP-MS — prevents electromigration failures that are accelerated in high-humidity electroluminescent lamp operating environments, typically 85% RH at 85 °C per JESD22-A101 biased humidity testing.
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Nanostripper Electronic/EL Grade is a formulated photoresist and post-etch residue stripper intended for wafer-level packaging, redistribution layer cleaning, and copper pillar bump processing. The product is filtered through 0.1 µm fluoropolymer membranes and filled in cleanroom environments that maintain ISO 14644-1:2015 Class 5 conditions at the primary container. The Electronic/EL denomination refers to a purification and packaging protocol for semiconductor surfaces, not to a defined SEMI Grade classification; contaminant expression follows SEMI C8, and rinse-water compatibility is assessed against ASTM D1193 Type E-1.2. Lot-specific documentation includes trace metal cations by inductively coupled plasma mass spectrometry, chloride by ion chromatography, water content by Karl Fischer titration, and submicrometer particle counts.
Two application routes are common. In immersion wet-bench processing, the material is charged into a closed-lid PVDF bath with recirculating filtration and temperature control; in single-wafer spray processing, point-of-use dispensing through fluoropolymer lines and nozzle-assisted deionized water rinsing are used for short-cycle post-etch residue removal. The EL grade is not a general-purpose solvent replacement; spent bath and first-rinse effluent must be segregated according to local hazardous-waste regulation and to the site’s copper and fluoride discharge limits. Packaging is typically a 20 L fluoropolymer-coated drum or a 200 L stainless steel tote with nitrogen blanket, but container size must be confirmed with the supplier.
Typically, immersion processing with Nanostripper Electronic/EL Grade is constrained by moisture uptake, volatile loss, and galvanic corrosion risk on electroplated copper pillars. At a setpoint of 65 °C, the open bath surface exchanges water with ambient air; water content increases with cleanroom relative humidity and alters the solvency balance. The known production failure mode in open immersion tanks is enhanced moisture absorption at relative humidity above 60%, producing edge-die undercut variability within 8 h of unattended operation. Closed-lid wet benches with nitrogen sweep reduce this drift but do not eliminate bath ageing caused by dissolved atmospheric carbon dioxide.
Heat-up rate should not exceed 5 °C/min because localized overheating in quartz heater pockets can cause solvent decomposition and charring. Exhaust flow must be balanced to avoid cooling the bath surface and condensing water vapor; condensation droplets returning to the bath are a source of water and particles. Bath sampling every 2 h for water content and pH is recommended for high-volume copper pillar lines.
PTFE or PVDF tanks and quartz heaters are preferred over passivated stainless steel. Exposed metal heater surfaces are a source of particle and cation contamination, particularly nickel and chromium if passivation is incomplete. Recirculating filtration should use 0.1 µm polytetrafluoroethylene cartridges, with pump capacity arranged to turn the bath volume in 2–5 min; lower turnover rates permit particle deposition on wafer topside edges. The upper processing temperature is 75 °C. Above this limit, volatile losses increase, viscosity decreases, and copper pitting susceptibility rises on exposed seed layers. Dilution with deionized water above 5 wt% is not recommended unless patterned-wafer galvanic testing has been completed.
For front-end-of-line and memory-wafer use, total metallic contamination below 10 ppb is frequently the incoming process requirement. The EL grade is therefore documented by lot-specific release data rather than by a single guaranteed maximum, because analytical detection varies with digestion and dilution. The table below lists the routine release parameters and the analytical reporting capability, not an exhaustive limit set.
| Release parameter | Analytical method | Reporting capability |
|---|---|---|
| Trace metal cations: Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn | ICP-MS after acid digestion | 0.1–1 ppb |
| Chloride | Ion chromatography; ASTM D4327-17 | 50 ppb |
| Water | Karl Fischer titration; ASTM E203-16 | 0.01 wt% |
| Particles ≥ 0.2 µm | Laser light obscuration | 1 particle/mL |
| Particles ≥ 0.5 µm | Laser light obscuration | 1 particle/mL |
Chloride is monitored because chloride residues at the polymer-to-tin-alloy interface and at aluminum bond pads accelerate pitting and can reduce biased-HAST reliability. Sodium, potassium, and calcium are controlled to limit mobile ion drift in gate oxides and low-k dielectrics. It should be noted that incoming wafers carrying plasma-etch residues may introduce titanium, aluminum, and copper into the bath; filtration alone does not remove ionic metal contamination, so bath exchange intervals must be established by trace-metal trending and patterned-wafer corrosion testing, not by clearing time alone.
The primary process conflict in Cu/low-k residue removal is selectivity to low-k dielectric sidewalls versus dissolution of cross-linked etch residues. Microporous low-k films with k below 2.6 absorb solvent and undergo dielectric constant shift during immersion. Process temperature must remain at the lower end of the supplier window for thick porous low-k stacks to limit capillary damage. The temperature window is often narrow; controller cycling beyond ±3 °C around 55 °C can produce lot-level dielectric constant non-uniformity. Published data for Nanostripper Electronic/EL Grade specific to dense low-k films below k = 2.6 are limited; process qualification should include dielectric constant recovery after vacuum bake at 250 °C for 4 h.
Particle removal is most sensitive at the via bottom, where chemical exchange is poor. In single-wafer spray tools, a two-phase sequence of short chemical dispense followed by deionized water rinse at 0.3–0.5 MPa prevents redeposition. If the rinse is delayed beyond 10 s, stripper film dries at the wafer edge and leaves organic residue that is not removed by downstream vapor-phase cleaning. Copper oxidation is controlled by maintaining a non-oxidizing chemical environment. Oxygen sparging must be avoided, and nitrogen blanketing is recommended for bath storage.
Gasket and seal compatibility in immersion tanks must also be validated. Ethylene propylene diene monomer and perfluoroelastomer gaskets are commonly used; silicone rubber should be avoided because it swells in polar aprotic formulations and releases siloxane particulates. This failure mode has been observed as white particle deposition at the wafer bevel after prolonged bath idling.
Aluminum bond pads and titanium nitride barriers are vulnerable to chloride-induced pitting and alkaline attack. Nanostripper Electronic/EL Grade must be qualified by patterned-wafer split-lot testing using the actual pad stack, because electrochemical potential differences between copper and aluminum in the stripper can create galvanic corrosion. Process conditions that are acceptable for pure copper redistribution layers may not be acceptable for Al-Cu alloy pads. The product should not be combined with amine-based additives or strong alkaline buffering agents, because such modifiers raise pH and accelerate aluminum dissolution. If titanium nitride is exposed, the first qualification phase should restrict stripper temperature to 50 °C. Fluoride-containing residues from previous plasma etch steps increase TiN attack; a deionized water pre-rinse is therefore mandatory before chemical immersion.
Compared with NMP-based photoresist strippers, Nanostripper Electronic/EL Grade is distinguished primarily by particulate and metal-cation documentation and by deionized water rinse compatibility, not by raw solvency alone. N-methyl-2-pyrrolidone has been subject to regulatory restriction in several jurisdictions, but that classification does not by itself define the toxicological or handling profile of the EL grade; a full REACH Safety Data Sheet and local exposure assessment remain mandatory. In comparison with hydroxylamine-based formulations, the EL grade is positioned for lower alkaline attack on aluminum if chloride and water contents are controlled. This difference must be verified by potentiodynamic polarization testing per ASTM G5-14 on the intended metal stack.
Single-wafer cleaning platforms typically dispense the stripper through a point-of-use fluoropolymer heat exchanger set to a wafer-plane temperature of 25–50 °C. Published data for this specific product configuration on 300 mm platforms are limited; users should establish the minimum dispense time that achieves complete resist clearing at the wafer-center via, because extended dwell time increases bottom-of-via etch loss. Final rinse with ASTM D1193 Type E-1.2 deionized water is followed by spin drying. Residual moisture must be below 0.1% by surface evaporation gravimetry before downstream plating or passivation.
