| HS Code | 424966 |
| Chemical Formula | CeO2 |
| Cas Number | 1306-38-3 |
| Molecular Weight | 172.12 g/mol |
| Purity | ≥99.9% |
| Particle Size | 20-50 nm |
| Appearance | White to light yellow powder |
| Crystal Form | Cubic |
| Density | 7.13 g/cm³ |
| Melting Point | ~2400 °C |
| Solubility | Insoluble in water |
| Specific Surface Area | 30-70 m²/g |
| Grade | Electronic/EL Grade |
As an accredited Nano Ceria Abrasive Powder Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Sealed in double-layer PE bags under argon, packed in HDPE drums with desiccant; net quantity 1 kg per container. |
| Container Loading (20′ FCL) | Nano Ceria Abrasive Powder, Electronic/EL Grade, packed in sealed drums on pallets, loaded and secured in 20′ FCL container. |
| Shipping | This nano ceria abrasive ships in sealed, moisture-resistant containers to preserve purity and particle size. Standard ground transport is suitable, with proper labeling for non-hazardous material. Avoid extreme temperatures and handle with care to prevent container damage or dust exposure. Ensure compliance with all applicable shipping regulations. |
| Storage | Store in a tightly sealed, original container in a clean, dry, cool environment. Protect from moisture, humidity, and direct sunlight to prevent agglomeration. Keep away from incompatible materials and dust-generating areas. Use desiccants if needed. Ensure proper labeling and minimize exposure to air; ideal under inert gas for extended shelf life. |
| Shelf Life | Shelf life is typically 12 months when stored sealed in a cool, dry place, retaining polishing performance. |
For 300 mm shallow trench isolation planarization on logic and DRAM wafers, electronic-grade nano ceria powder with a median particle size D50 of 80–130 nm measured by ISO 22412:2017 and a BET specific surface area of 15–40 m²/g measured by ISO 9277:2022 is dispersed in ultrapure water at 0.5–2.0 wt% solids. Total rare earth impurity is specified below 200 ppm, sodium below 1 ppm, and chloride below 50 ppm by acid digestion and ICP-MS to avoid transistor threshold voltage shifts. The slurry pH is maintained at 7.8–9.2 using dilute nitric acid or potassium hydroxide; the oxide-buffered surface charge prevents rapid agglomeration. An anionic polyacrylate dispersant at 0.05–0.20 wt% of slurry mass is added to control zeta potential at −30 to −50 mV. Filtration through 0.5 µm polypropylene depth filters at point-of-use dispensing prevents large-particle counts from exceeding 150 particles/mL at a 0.2 µm threshold. On a rotary CMP platform with a polyurethane pad having Shore D hardness 50–60, applied downforce is 3.0–5.0 psi, platen speed 63–90 rpm, carrier speed 57–87 rpm, and slurry flow 120–200 mL/min. Under these conditions, removal rate for TEOS silicon dioxide ranges from 2500 to 4500 Å/min, while silicon nitride removal is held below 150 Å/min to yield a selectivity above 30:1. Post-polish within-wafer non-uniformity is typically 3–5% one sigma, and post-clean AFM surface roughness remains below 0.5 nm Ra. Post-CMP cleaning uses a double-sided brush scrubber with 0.5–1.0 wt% ammonium hydroxide and 0.1–0.5 wt% hydrogen peroxide at 40–60 °C, followed by spin rinsing and nitrogen drying. The planarized wafers are used for STI structures in advanced logic and DRAM devices. The table below summarizes the operational envelope.
| Parameter | Observed Range | Measurement / Control Method |
|---|---|---|
| Slurry solids loading | 0.5–2.0 wt% | Gravimetric solids analysis, daily |
| Particle size D50 | 80–130 nm | ISO 22412:2017 dynamic light scattering |
| pH | 7.8–9.2 | In-line pH probe, two-point calibration |
| Downforce | 3.0–5.0 psi | Polisher air-bearing pressure transducer |
| Platen / carrier speed | 63–90 / 57–87 rpm | Servo encoder feedback |
| Slurry flow | 120–200 mL/min | Coriolis flowmeter |
| SiO₂ removal rate | 2500–4500 Å/min | Ellipsometry after dry-in |
| Selectivity to Si₃N₄ | >30:1 | Ellipsometry on blanket monitors |
| Post-polish WIWNU | 3–5% 1σ | 49-point diameter scan, ellipsometry |
| Post-clean roughness | Ra <0.5 nm | AFM 10×10 µm scan |
High-density plasma SiO₂ films at 0.5–1.5 µm thickness present a drift problem because the Ce³⁺/Ce⁴⁺ redox couple on ceria particles shifts with slurry age and dissolved oxygen ingress. At pH 4.5–6.5, the removal rate for HDP oxide is 3000–6000 Å/min with fresh slurry, but recirculated loops can lose 15–25% of removal rate over 8 h unless oxidation-reduction potential is held at +250 to +450 mV versus Ag/AgCl. The slurry is dosed point-of-use at 1.0–2.5 wt% ceria and blended with 0.05–0.15 wt% picolinic acid to suppress nitride attack. Pad conditioning with a diamond disk of 100–150 µm grit at 5–8 lbf downforce maintains microtexture; improper conditioning raises shear stress and adds sub-surface damage. The process is run on 300 mm polishing platforms with carrier backpressure 2–4 psi, retaining ring pressure 5–7 psi, and platen temperature 45±5 °C. Endpoint is detected by motor current and optical reflectance; wafers remain in Class 4 cleanroom conditions defined by ISO 14644-1:2015. The finished interlayer dielectric meets a post-CMP thickness range of ±100 Å across the wafer.
Polishing of 6025 synthetic quartz photomask blanks for 193 nm immersion lithography uses nano ceria at 0.1–0.5 wt% with a D50 of 50–120 nm. The slurry is prepared in ISO Class 5 cleanroom conditions and filtered through 0.2 µm polypropylene membranes. Double-sided planetary polishers with polyurethane pads apply 100–300 g/cm² downforce at platen rotation 20–40 rpm, and slurry pH is held at 9.0–11.0 with potassium hydroxide. Excessive large-particle counts from slurry aggregation are the primary cause of scratch/dig failures; a 20-10 scratch–dig designation per MIL-PRF-13830B requires post-polish surface roughness below 0.2 nm Ra measured by atomic force microscopy and flatness total thickness variation below 2 µm. The finished photomask blank is inspected under high-intensity collimated light; defect maps must show fewer than 5 particles at or above 10 µm per blank. Compliance is documented against ISO 10110-7:2017 surface imperfection tolerances and EU RoHS Directive 2011/65/EU for heavy metal restrictions.
| Characteristic | Limit | Reference Method / Standard |
|---|---|---|
| Scratch–dig | 20-10 | MIL-PRF-13830B |
| Surface roughness Ra | ≤0.2 nm | AFM, 10×10 µm scan |
| Total thickness variation | ≤2 µm | Interferometric thickness mapping |
| Defect count ≥ 10 µm | ≤5 per blank | Automated dark-field inspection |
| Sodium / alkali residues | <1×10¹² atoms/cm² | TOF-SIMS after cleaning |
| Heavy metals Pb/Cd/Hg/Cr(VI) | <100 ppm homogeneous material | EU RoHS 2011/65/EU |
During double-sided polishing of aluminosilicate glass hard disk blanks, edge roll-off and microwaviness rather than bulk removal rate control acceptance yields. A ceria slurry with median particle size 60–100 nm and total alkali below 1 ppm is used at 1.5–4.0 wt% solids; pH is maintained at 8.5–10.5. The polishing tool applies 80–150 g/cm² on both sides with platen speed 40–70 rpm. Stock removal is controlled to 10–25 µm per side to avoid taper; edge roll-off is kept below 0.25 mm from the outer 1 mm annulus. Micro-roughness after final polish is below 0.3 nm Ra measured by optical profilometry. The substrate is chemically strengthened and used as a 2.5-inch glass hard disk substrate. Slurry concentration drift above 0.5 wt% between replenishment cycles causes pad glazing and chatter marks; on production lines, densitometric slurry monitoring with in-line specific gravity correction is applied.
CNC sub-aperture polishing of aspherical glass lenses requires ceria powders with a controlled size distribution between 50 nm and 150 nm and a specific surface area of 20–50 m²/g. The slurry is mixed at 0.5–3.0 wt% and pH 8.0–10.0. Polishing pressure is 0.5–2.0 bar against a polyurethane pad, with spindle speed 300–1200 rpm depending on tool radius. Removal depth per pass is 50–300 nm per dwell point, and surface figure error is held to λ/10 peak-to-valley at 632.8 nm using interferometry. Slurry aging changes the particle size distribution through shear-induced aggregation; recirculation beyond 4–6 h can produce surface roughness above 1.0 nm Ra. Compliance with ISO 10110-7:2017 and MIL-PRF-13830B governs cosmetic defects; the polished lenses are used in camera objectives and laser beam shaping optics.
In LTPS TFT backplane fabrication, ceria polishing slurries are applied to aluminosilicate display glass prior to ITO and polycrystalline silicon deposition. The critical boundary is alkali contamination: post-polish sodium and potassium on the glass surface must remain below 1×10¹² atoms/cm² by X-ray photoelectron spectroscopy. Slurry solids are typically 0.2–1.0 wt% with pH 9.0–10.5; polishing time is constrained to 2–5 min per plate to avoid thickness reduction beyond 0.5 µm. Large-area polishing uses linear reciprocating tools with pad pressure 50–100 g/cm². The end product is 0.5 mm display glass with roughness Rq <0.5 nm and total thickness variation below 10 µm across a G5 substrate. Published data for specific ceria formulations at G6 and larger is limited; tool qualification typically uses witness wafers and daily SIMS checks.
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Nano Ceria Abrasive Powder Electronic/EL Grade is supplied as a high-purity cerium(IV) oxide particulate for chemical mechanical planarization, precision glass finishing, photomask polishing, and electroluminescent display substrate processing. Model coding follows the NC-EL designation, with lot suffix variants -50, -80, and -120 corresponding to nominal median particle diameters of 50 nm, 80 nm, and 120 nm, respectively. The powder consists primarily of cubic fluorite CeO₂ with a crystal density of 7.13 g/cm³ and is manufactured to electronic-grade acceptance limits for trace metals, coarse particle counts, and alpha-emitting impurities. Unlike optical-grade ceria, the Electronic/EL Grade is specified for device-level defect control in semiconductor and display manufacturing. Primary use involves dispersion into aqueous CMP slurries at solids loadings from 1 wt% to 10 wt%, with the grade-specific particle size selected according to the required material removal rate and surface roughness budget.
The primary specification boundary separating Electronic/EL Grade from optical-grade ceria is the simultaneous control of coarse-particle defects and ionic contamination. Optical polishing grades may allow broader particle size distributions and higher rare earth substitution; the Electronic/EL Grade requires the D90/D10 ratio to remain below 3.0 and total trace metal content below 100 µg/g. This distinction is operationally significant because a single ≥0.5 µm agglomerate can create a scratch or embedded particle defect in oxide or low-k dielectric CMP, while mobile ions such as sodium can shift transistor threshold voltages after thermal processing. Selection among the three model suffixes is governed by removal-rate and roughness trade-offs. The 50 nm model provides the lowest post-polish roughness for photomask and display glass; the 80 nm model is the default for shallow trench isolation and interlayer dielectric CMP; the 120 nm model is intended for fast blanket oxide thinning where post-CMP roughness tolerance is wider.
Lot acceptance testing for the Electronic/EL Grade is performed on samples from each production lot. Particle size distribution is measured by dynamic light scattering in accordance with ISO 22412:2017; the allowed D50 range is 50–150 nm depending on the ordered model, and the D90/D10 span is held below 3.0. Specific surface area is measured by nitrogen adsorption in accordance with ISO 9277:2010 and typically falls between 10 m²/g and 30 m²/g. Zeta potential in 0.01 M KCl at pH 4.5 is measured by electrophoretic light scattering per ISO 13099-1:2012 and is specified as +25 mV to +45 mV for the anionic-dispersant-compatible grade. Trace metal content is determined by ICP-MS after closed-vessel acid digestion. Combined rare earth impurities are limited to 100 µg/g, sodium and potassium are each limited to 5 µg/g, iron to 10 µg/g, and uranium plus thorium to 1 ng/g total for electronic-grade applications. Loss on drying at 105 °C is specified at 0.5 wt% maximum.
Table 1. Representative acceptance ranges for the Nano Ceria Abrasive Powder Electronic/EL Grade.
| Property | Test method / equipment | Acceptance range |
|---|---|---|
| Crystal phase | X-ray diffraction | Cubic fluorite |
| CeO₂ purity | ICP-MS | ≥ 99.95 mass % |
| Median particle diameter D50 | ISO 22412:2017 | 50–150 nm |
| D90/D10 span | ISO 22412:2017 | ≤ 3.0 |
| BET specific surface area | ISO 9277:2010 | 10–30 m²/g |
| Zeta potential at pH 4.5 | ISO 13099-1:2012 | +25 mV to +45 mV |
| Total rare earth impurities | ICP-MS | <100 µg/g |
| Sodium | ICP-MS | <5 µg/g |
| Iron | ICP-MS | <10 µg/g |
| Uranium + thorium | ICP-MS | <1 ng/g |
| Loss on drying at 105 °C | Gravimetric | ≤ 0.5 wt% |
Cleanroom handling is required at the point of packaging. The powder is double-bagged in low-sodium polyethylene liners and packed in fiber drums with desiccant in environments meeting ISO 14644-1 Class 7 or better. Unopened containers stored at 10–30 °C and relative humidity below 60% retain certified particle size distribution for 12 months. If the liner is opened outside cleanroom conditions, the risk of coarse particle ingress increases and the powder should be requalified by large-particle counting before slurry blending.
In shallow trench isolation CMP, removal-rate selectivity between silicon dioxide and silicon nitride is governed by the Ce³⁺/Ce⁴⁺ redox pair and by adsorption of slurry additives on the nitride surface. The ceria particle surface exhibits an isoelectric point near pH 6.5–7.5. At acidic pH values between 4.0 and 6.0, the particle charge becomes positive, promoting interaction with silicon dioxide while anionic carboxylate or phosphate additives suppress nitride contact. On a 300 mm rotary CMP tool with a polyurethane pad and downforce of 3–5 psi, ceria-based slurries formulated from the 80 nm model typically produce thermal oxide removal rates in the 80–150 nm/min range, while thermal nitride removal rates are maintained below 10 nm/min under the same conditions. Selectivity ratios therefore exceed 10:1, which is required for advanced logic and memory integration where nitride erosion and step-height degradation must be minimized. Published removal-rate data for this exact Electronic/EL Grade configuration are limited; split-lot screening on target oxide and nitride films is recommended because pad conditioning, slurry flow, platen temperature, and post-platen redox state all affect the Ce³⁺/Ce⁴⁺ balance.
For electroluminescent display glass and photomask substrates, the 50 nm model is dispersed at 1–3 wt% solids in high-purity deionized water with an anionic polyacrylate dispersant at 0.1–0.5 wt% relative to solids. Polishing is performed on a planetary glass polisher with polyurethane pads at platen speeds of 30–60 rpm and slurry flow of 50–150 mL/min. Surface roughness of fused silica after 10 min polishing is routinely below 1 nm Ra when measured by atomic force microscopy over 10 µm × 10 µm scans. The EL-grade qualification for display glass includes migration testing for sodium and lithium because alkali ions from glass can degrade electroluminescent phosphor layers. The narrow particle size distribution reduces light point defects compared with conventional ceria, but polishing pad conditioning remains necessary to maintain removal-rate stability over extended runs.
Slurry preparation for the Electronic/EL Grade requires dispersion equipment capable of generating tip speeds between 8 m/s and 15 m/s, such as a rotor-stator mixer or a high-shear centrifugal disperser. The accepted addition sequence is to pre-adjust deionized water to pH 4.0–5.0, add dispersant, and then add powder under continuous shear. Reverse addition or simultaneous addition of pH adjuster and powder produces localized gel-like agglomerates that cannot be fully redispersed by later milling. After dispersion, the slurry is filtered through 0.5 µm nominal-depth polypropylene filters. Large-particle counts measured by single-particle optical sensing at ≥0.5 µm should remain below 100 counts/mL before tool use. Raising solids loading above 10 wt% typically increases viscosity above 10 mPa·s and reduces filter lifetime; high-solids slurries are therefore commonly let down after filtration. The processing window for pH is narrow because a shift above pH 8.0 can move the zeta potential toward the isoelectric point and initiate particle aggregation, while a shift below pH 3.0 can leach trivalent cerium species and alter removal-rate stability.
Post-polish cleaning with ceria abrasives differs from cleaning after silica-based CMP. Ceria residues adhere more strongly to hydrophobic dielectric surfaces and require dilute organic acid or surfactant-based brush scrubbing at pH 2.0–4.0. Filtration of the cleaning chemistry at 0.2 µm is necessary to prevent re-deposition of particles. On silicon nitride stop layers, residual ceria can create metal contamination risk if the cleaning bath is not changed at intervals; iron and sodium limits in the powder do not eliminate contamination introduced from spent slurry bulk.
Table 2. Comparative operational attributes of abrasive systems used in oxide CMP and glass finishing.
| Attribute | Nano Ceria Electronic/EL Grade | Colloidal silica | Fumed alumina | Conventional ceria |
|---|---|---|---|---|
| Typical particle size | 50–150 nm | 20–100 nm | 10–100 nm | 1–5 µm |
| Primary removal mechanism | Chemical-mechanical via Ce³⁺/Ce⁴⁺ surface complexation | Mechanical with pH-dependent hydrolysis | Mechanical abrasion | Mechanical-chemical |
| Oxide: nitride selectivity | High, exceeding 10:1 | Moderate | Low | Moderate |
| Dispersion stability | Stabilized at pH 4–6 or 9–11 | Excellent in alkaline pH | Moderate; requires surfactant | Poor; settles rapidly |
| Post-polish surface roughness | Ra <1 nm | Ra <1 nm | Ra 1–2 nm | Ra 1–5 nm |
| Relative hardness | Mohs 6–7 | Mohs 7 | Mohs 9 | Mohs 6–7 |
| Relative cost position | Higher | Moderate | Moderate | Lower |
The Electronic/EL Grade is incompatible with high concentrations of free amine-based additives at pH above 9.0. Under these conditions, amine adsorption displaces anionic stabilizers and can cause rapid recirculation-line agglomeration in slurry distribution systems. Oxidizer compatibility is process-dependent: hydrogen peroxide at 0.1–1.0 wt% can be used with the ceria slurry for enhanced oxide removal, but pre-mixing peroxide with concentrated dispersant before powder addition may generate oxygen bubbles that destabilize the slurry. The dry powder should not be stored in opened containers at relative humidity exceeding 60%; if exposure has occurred, pre-drying at 120 °C for 2 h is required before use because surface hydration alters redispersion behavior and particle size measurements. The product should be segregated from strong acids, strong bases, and volatile organic solvents in storage. Slurry equipment should be cleaned with high-purity deionized water after each lot; residual dried ceria on pipe walls can seed large-particle defects in subsequent batches.
