| HS Code | 415447 |
| Product Name | LCD Photoresist TOK TPR-1000 |
| Tone | Positive |
| Resin System | Novolak |
| Sensitizer | Naphthoquinone diazide (DNQ) |
| Solvent | Propylene glycol monomethyl ether acetate (PGMEA) |
| Appearance | Amber to brown transparent liquid |
| Viscosity | Typically 10–30 mPa·s at 25°C depending on grade |
| Solid Content | Typically 20–35% |
| Density | Approximately 1.0 g/cm³ at 25°C |
| Flash Point | Above 30°C |
| Spectral Sensitivity | i-line (365 nm) and broad-band UV |
| Resolution | Supports fine patterns on the order of 1–3 µm |
| Film Thickness Range | Approximately 0.5–5 µm depending on spin/slit coating conditions |
| Etch Resistance | Good stability during LCD panel etching processes |
| Developer Compatibility | Compatible with TMAH aqueous alkaline developers |
| Typical Use | TFT-LCD patterning including electrodes, channel layers, and circuit patterns |
As an accredited LCD Photoresist TOK TPR-1000 factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Supplied in opaque, nitrogen-purged plastic bottles, each containing 1 liter of LCD photoresist TOK TPR-1000, sealed against light and contamination. |
| Container Loading (20′ FCL) | 20′ FCL loading of LCD Photoresist TOK TPR-1000: secure drums/pails upright, segregate from oxidizers, protect from heat, ensure proper labeling and ventilation. |
| Shipping | Ship LCD Photoresist TOK TPR-1000 in light-shielded, sealed containers to prevent UV exposure and evaporation. Keep away from heat, sparks, and open flames. Label as flammable/irritant per SDS. Use grounded, ventilated transport; avoid extreme temperatures and moisture. Follow local dangerous goods regulations for safe handling and delivery. |
| Storage | Store LCD Photoresist TOK TPR-1000 in its original, tightly sealed container in a cool, dry, well-ventilated area. Keep away from direct sunlight, ultraviolet light, heat, and ignition sources. A controlled temperature is recommended. To prevent contamination and performance degradation, avoid exposure to moisture, acids, bases, and oxidizing agents. Maintain proper storage conditions to ensure product stability and intended shelf life. |
| Shelf Life | Shelf life is typically 6–12 months if stored unopened in original containers, away from light, at controlled temperatures. |
Application-relevant process windows for TPR-1000 are assembled from public flat-panel-display photoresist data and typical production settings; lot-specific certificates of analysis must govern final production targets. Following PVD deposition of molybdenum/aluminum or molybdenum-tungsten gate-metal stacks, TPR-1000 is applied on G8.5 to G10.5 display glass as a positive-tone i-line mask for gate-level photoengraving. The PGMEA-based formulation is supplied at a solids fraction of 20–25 wt%; spin-coat tracks dispense 1.2–2.0 mL per 1,000 cm² in two stages—300–500 rpm for 3 s leveling, then 1,400–1,800 rpm for 20–30 s final spin—to produce a post-softbake film of 1.2–1.8 µm. Slot-die coaters on Gen 10.5 lines maintain wet-film viscosity at 15–18 cP and hold PGMEA dilution at ≤3 wt%; when dilution exceeds 5 wt%, edge bead height degrades and dried-film range widens beyond 0.15 µm. Softbake at 100–110°C for 90–120 s precedes 365 nm i-line exposure at 30–80 mJ/cm² and 2.38 wt% TMAH development at 23±1°C for 40–80 s. Oxygen plasma descum and wet etch follow; resist stripping in hot NMP or commercial stripper completes the gate layer. The process operates under ISO 14644-1:2015 Class 5 cleanroom conditions; equipment safety is referenced to SEMI S2-0718 and SEMI S8-0718; final modules are evaluated against RoHS 2011/65/EU Annex II restricted substances and REACH EC 1907/2006 SVHC. Terminal products are TFT gate patterns for LCD televisions, notebook panels, desktop monitors, automotive displays, and industrial monitors.
Source-drain metal patterning for a-Si or IGZO TFT backplanes uses i-line positive resist on aluminum, copper, or Cu/Mo source-drain layers. TPR-1000 is coated after interlayer dielectric deposition and via opening; the resist is dispensed at 1.0–1.8 mL per 1,000 cm² to a softbake thickness of 1.0–1.6 µm, with final thickness matched to the 0.2–0.5 µm metal step height. PGMEA dilution is allowed up to ≤3 wt% for viscosity control, and the solution is filtered through 0.2 µm absolute capsules before coating to limit particle defects on fine 1.5–2.5 µm channel patterns. Softbake runs at 95–110°C for 90–120 s; exposure uses 365 nm i-line steppers or scanners at 40–90 mJ/cm²; development in 2.38 wt% TMAH at 23±1°C for 40–70 s clears the exposed regions. Wet etch of copper-based stacks uses acid-based chemistry, during which resist adhesion and post-development hardbake at 110–130°C for 120–180 s prevent lift-off and undercut beyond 0.3 µm. The downstream process then strips the resist in hot NMP or a commercial stripper before the subsequent passivation layer. Compliance includes ISO 14644-1:2015 Class 5 lithography bays, SEMI S2-0718 and SEMI S8-0718 equipment provisions, and RoHS/REACH screening of finished displays. Terminal products are source-drain electrode patterns for active-matrix backplanes in laptops, desktop monitors, ultra-high-definition televisions, and automotive instrument clusters.
Chromium-based black matrix layers on color filter substrates require a positive resist mask with sufficient adhesion and chemical resistance during ceric ammonium nitrate etching. TPR-1000 is coated over sputtered CrOx or Cr/CrOₓ films of 0.1–0.2 µm thickness at a post-softbake thickness of 0.8–1.2 µm; spin-coating dispense volumes of 0.8–1.2 mL per 1,000 cm² yield acceptable uniformity, and slot-die PGMEA dilution is limited to ≤5 wt% on large substrates. Softbake at 90–100°C for 60–120 s is followed by 365 nm exposure at 30–60 mJ/cm² and development in 2.38 wt% TMAH for 30–60 s. Chromium etching is performed with 15–20 wt% ceric ammonium nitrate solution at 30–40°C; resist lifting in this acid-oxidizer environment is controlled by a post-development hardbake at 110–130°C for 120–180 s. After stripping, the resulting black matrix pattern exhibits optical density above 4.0 per µm in the visible range, verified by ISO 11664-1:2017 spectral transmittance measurements. Compliance for the final color filter includes RoHS 2011/65/EU Annex II and REACH SVHC, and where halogen-free designation is required, IEC 61249-2-21 applies. Terminal products are black matrix layers integrated into color filter glass for LCD panels in consumer electronics, automotive clusters, and industrial displays.
Transparent indium tin oxide (ITO) electrodes for LCD pixel electrodes and touch sensing layers are patterned with TPR-1000 where the downstream etch chemistry generates thermal and acidic stress. The resist is coated on ITO-sputtered glass at a post-softbake thickness of 1.0–1.5 µm; spin recipes dispense 0.8–1.5 mL per 1,000 cm² and final spin speed is adjusted to 1,600–2,000 rpm to keep radial thickness nonuniformity below 0.10 µm. PGMEA addition is restricted to ≤3 wt% and must be followed by 0.2 µm absolute filtration to avoid particle defects on the transparent electrode surface. The coated substrate is softbaked at 95–105°C for 90 s, exposed on an i-line aligner at 50–100 mJ/cm², and developed in 2.38 wt% TMAH at 23±1°C for 50–90 s. A post-development hardbake at 130–150°C for 150–300 s densifies the resist before etching in 6–10 wt% HCl/FeCl₃ or oxalic acid-based ITO etchants at 35–45°C. Inline sheet-resistance mapping after etch, performed per ASTM F1711-96 or equivalent, rejects glass with line width variation above 5% of target. Final displays comply with RoHS 2011/65/EU Annex II, REACH SVHC, and ISO 14644-1:2015 Class 5–7 environments depending on lithography and etch room classification. Terminal products include ITO pixel electrodes in liquid crystal cells, capacitive touch sensor films, and display-integrated touch modules.
In the back-end passivation sequence of a-Si TFT backplanes, plasma-enhanced chemical vapor deposition of SiNx at 250–500 nm is followed by via-hole opening to the drain pad. TPR-1000 is coated directly over the inorganic passivation layer at a post-softbake thickness of 2.0–3.0 µm, providing step coverage across 0.5–1.5 µm topography. Coating systems dispense 1.5–2.5 mL per 1,000 cm² at 1,000–1,500 rpm; slot-die coaters in G8.5 lines maintain wet-film viscosity at 18–20 cP, and PGMEA dilution is held at ≤2 wt% because higher dilution reduces film thickness at the via rim and exposes SiNx during plasma etch. Softbake at 100–115°C for 120 s, i-line exposure at 60–120 mJ/cm² through a via mask, and spray development in 2.38 wt% TMAH for 60–100 s clear the via openings. A hardbake at 120–140°C follows before plasma etching in CF₄/O₂ or SF₆-based gases; the resist is then stripped in hot 5–10% TMAH or a commercial stripper, leaving clean vias for subsequent ITO or metal interconnection. The critical failure mode on production lines is passivation sidewall cracking if hardbake exceeds 150°C, so thermal profiles are verified by weekly thermocouple traverses of the oven. Compliance includes SEMI S2-0718 for coater/developer equipment, SEMI S8 for ergonomics, ISO 14644-1:2015 Class 5 for the lithography bay, and RoHS/REACH for the finished panel. Terminal products are TFT backplanes with passivated via contacts for LCD modules used in notebook PCs, desktop monitors, and industrial control displays.
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TOK TPR-1000 is a positive-tone photoresist supplied by Tokyo Ohka Kogyo Co., Ltd. for liquid-crystal display photolithography. The product belongs to the TPR series of solvent-borne liquid resists intended for LCD array, black-matrix, and color-filter patterning on soda-lime and alkali-free glass substrates. In exposed regions, diazonaphthoquinone–novolak chemistry undergoes photolysis to generate aqueous-alkali-soluble products; unexposed regions remain as the etch mask after development. Typical layer applications include gate-electrode patterning, source-drain electrode formation, passivation via definition, and black-matrix photomasking. The TPR-1000 model is specified for slot-die or spin coating, with viscosity, solvent-release characteristics, and film thickness controlled for large-generation panel handling.
Physical-property control at release includes viscosity, density, non-volatile content, water content, and particle count. Viscosity is measured by cone/plate viscometry under ASTM D4287-18. Density is determined by ISO 1183-1:2019. Non-volatile content is reported from ASTM D2369-20. Water content is measured by Karl Fischer titration in accordance with ASTM E203-16. Because the resist is dispensed through precision pumps and slot-die heads, lot-to-lot viscosity variation must be held within the manufacturer’s release window; deviations shift wet-film thickness and therefore dry-film thickness after prebake. Storage at 5 °C to 25 °C in unopened containers minimizes solvent loss and particle agglomeration. Freezing must be avoided. Before use, the product is conditioned in the cleanroom for 12–24 h and filtered through point-of-use membranes. Published shelf-life and specific release limits for TPR-1000 must be obtained from the current Tokyo Ohka Kogyo certificate of analysis.
Coating onto Gen 6 or larger glass is performed with slot-die coaters operating in cleanroom environments. The wet-film thickness is governed by the volume delivery rate, die-to-substrate gap, and coating speed. For a given dry-film target, the resist is supplied or diluted to a fixed non-volatile content to achieve cross-panel uniformity. The basic process relationship is dry-film thickness equal to wet-film thickness multiplied by solids fraction; therefore solids variation is as significant as pump-rate variation. After coating, the panel enters a prebake oven or vacuum hotplate; solvent evaporation and film densification occur. Temperature uniformity across the plate is critical because development rate in positive-tone resists is sensitive to residual solvent and polymer free volume. Batch records commonly include prebake plate temperature mapping, and coating thickness is measured by reflectometry or ellipsometry at multiple panel points. The dried film is inspected for streak, comet, and pinhole defects using automated optical inspection. A typical film thickness range for display photoresist processes is 1.0 µm to 3.0 µm; the TPR-1000-specific target depends on the layer design and etch selectivity.
In a production bay, coated and exposed panels may wait before development if the developer line is occupied. For DNQ-novolak positive-tone resists, the primary post-exposure risk is not airborne amine contamination, as with chemically amplified systems, but surface inhibitor redistribution and moisture uptake. Extended delay can increase dark-film loss in unexposed areas or alter the effective exposure dose at the resist-substrate interface. Process engineers therefore set maximum post-exposure delay and hold times after evaluating line-resolved critical-dimension data. Exposure is normally performed through a photomask at 365 nm, 405 nm, or 436 nm, depending on the aligner or stepper optics. Development is accomplished in aqueous alkaline developers, often potassium hydroxide or tetramethylammonium hydroxide solutions, at controlled temperature and spray or dip mode. Developer normality, pH, temperature, and agitation are maintained within statistical process control limits to avoid residue, scum, or excessive dark erosion. Published Dill parameters, contrast curves, and photospeed values for TPR-1000 should be obtained from the current TOK technical data sheet; public sources do not provide a complete set for this product.
The patterned TPR-1000 film serves as an etch mask for dry or wet etching of molybdenum, aluminum, copper, indium tin oxide, and dielectric layers in TFT-LCD processing. Positive-tone novolak resists generally exhibit adequate plasma-etch resistance; film thickness is selected so that residual resist remains after etching. Etch selectivities depend on plasma source power, gas chemistry, substrate temperature, and pattern density. In wet-etch lines, adhesion to the underlying layer is critical. Adhesion loss during spray etching can produce undercut or lifted features; bond strength is therefore checked on test coupons or first production panels. After the etch step, the crosslinked or densified resist can be removed by solvent stripping or oxygen-plasma ashing. Solvent strippers based on N-methylpyrrolidone or formulated blends are common; ashing is used where solvent residues must be minimized. Incomplete stripping leaves organic residues that affect downstream deposition and can shift TFT electrical characteristics. Stripping completeness is monitored by contact-angle measurement, optical microscopy, or electron spectroscopy.
Point-of-use filtration is performed before dispense. Membrane cartridges with 0.05 µm or 0.1 µm retention reduce particle-related coating defects. The pressure differential across the filter is monitored; an upward trend indicates particle loading or gel formation. Pumps must be compatible with the solvent system, typically propylene glycol monomethyl ether acetate or similar esters. Elastomeric seals in contact with the resist are selected for solvent resistance to prevent swell and particle shedding.
Batch-to-batch variance in photoresist production is managed through release testing of polymer molecular weight, DNQ loading, and solvent composition. In display fabs, changes in molecular weight distribution can shift development rate, even when viscosity remains within specification. A high-shear viscosity test alone does not fully constrain the resist’s development behavior. Gel-permeation chromatography of the novolak resin and ultraviolet-visible spectrophotometry of the DNQ photoactive compound are therefore used by the manufacturer for quality assurance. The end user may repeat development-rate and contrast measurements for each incoming lot when linewidth control is tighter than the production specification.
When potassium hydroxide or sodium carbonate developers are used instead of metal-free tetramethylammonium hydroxide, trace alkali ions can remain on the glass surface after rinse. In TFT backplanes, sodium and potassium contamination can shift threshold voltage and degrade gate-oxide reliability. The rinse sequence therefore uses deionized water with controlled resistivity, and final cleanliness is verified by inductively coupled plasma mass spectrometry or total reflection X-ray fluorescence. Metal-ion developer use may be acceptable for black-matrix or color-filter layers where the electrical sensitivity is lower, but array layers generally require metal-free development. The choice depends on the specific TPR-1000 application layer and the customer’s contamination budget for the gate insulator interface.
Compared with conventional g-line novolak display resists, TPR-1000 is differentiated by formulation adjustments for large-area slot-die coating uniformity and lower defect density under high-speed coating. Compared with chemically amplified positive resists, it does not rely on photoacid diffusion and is therefore less sensitive to post-exposure bake temperature and airborne amine contamination. This stability is offset by lower intrinsic photospeed, which may constrain throughput in high-volume fabs. Compared with negative-tone display resists, TPR-1000 does not swell during development and is removed by the same downstream strip processes. The absence of solvent swelling tends to preserve feature edge quality in dense line arrays. These differences must be validated against the user’s specific exposure equipment, developer chemistry, and etch stack; published data for TPR-1000 in all possible configurations is limited.
| Attribute | TPR-1000 class (DNQ-novolak positive tone) | Chemically amplified positive resist | Negative-tone solvent-develop resist |
|---|---|---|---|
| Exposure mechanism | DNQ photolysis to indene carboxylic acid; aqueous alkaline solubility increase | Photoacid generation; acid-catalyzed deprotection | Photoinitiated crosslinking or polymerization |
| Post-exposure bake sensitivity | Moderate; no acid amplification | High; linewidth depends on PEB temperature and time | Variable; oxygen inhibition possible |
| Development medium | Aqueous alkaline developer | Aqueous alkaline or solvent developer | Organic solvent developer |
| Dark erosion tendency | Controlled by developer normality and temperature | Low in unexposed areas if PEB controlled | Low in crosslinked areas |
| Strip method | Solvent stripper or oxygen plasma | Solvent stripper or oxygen plasma | May require stronger solvent or plasma |
Process limits include developer concentration, temperature, and immersion or spray time. Exceeding the dark erosion budget causes film thinning in unexposed regions and degrades etch mask performance. The product must not be blended with amine-containing additives or exposed to alkaline vapors before exposure, because surface inhibition can alter development. Moisture absorption by the dried film before exposure can also shift development rate; relative humidity in coating and staging areas is often maintained at 45% to 55% RH. Coating equipment should be maintained with cleanroom-grade solvents and lint-free wipers; metal ion contamination must be controlled to avoid TFT threshold-voltage shifts. Regulatory compliance documentation, including safety data sheets and REACH declarations, must be obtained from the manufacturer for the specific lot. Because the safety data sheet defines flash point, ventilation rate, and personal protective equipment requirements, those values take precedence over generic display-resist handling literature.
