| HS Code | 998802 |
| Product Name | LCD Photoresist |
| Manufacturer | Beixu Electronics |
| Chemical Composition | Novolac resin with diazonaphthoquinone photoactive compound |
| Physical State | Liquid |
| Color | Reddish-brown to amber |
| Viscosity | 15 to 25 mPa·s at 25°C |
| Solid Content | 25% to 35% |
| Spectral Sensitivity | 350 to 450 nm (i-line and h-line) |
| Resolution | Up to 1.0 μm line/space |
| Adhesion | Excellent on glass and indium tin oxide substrates |
| Transparency | Low optical absorption after curing |
| Storage Temperature | 5°C to 25°C |
| Shelf Life | 12 months under recommended storage |
As an accredited LCD Photoresist Beixu Electronics factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in sealed 1-liter opaque containers, Beixu Electronics LCD photoresist ensures safe handling and stable storage. |
| Container Loading (20′ FCL) | 20′ FCL: Beixu Electronics LCD photoresist loaded in sealed, labeled drums; secured, ventilated, and containerized for safe chemical transport. |
| Shipping | Ship LCD Photoresist (Beixu Electronics) as a light-sensitive, temperature-controlled chemical. Use opaque, sealed containers with proper hazardous material labeling. Avoid extreme heat, direct sunlight, and freezing. Comply with local chemical transport regulations, ensure ventilation, and use certified carriers for safe, stable delivery. |
| Storage | Store in a cool, dry, well-ventilated area away from heat, sparks, open flames, direct sunlight, and incompatible oxidizers. Keep the container tightly sealed and upright when not in use. Prevent moisture and contamination. Follow manufacturer’s recommended temperature range, and inspect regularly for leakage or expiry. |
| Shelf Life | Shelf life is typically 6–12 months when stored in a cool, dark, airtight container at recommended temperatures. |
LCD photoresist supplied by Beixu Electronics is a liquid radiation-sensitive coating system intended for panel-level photolithography on glass substrates. The material is available in positive-tone and negative-tone grades, depending on downstream process architecture. In positive-tone systems, exposed areas are removed in aqueous-alkaline developer; in negative-tone systems, exposed areas undergo free-radical or acid-catalyzed crosslinking and remain after development. The following application scenarios are restricted to established display manufacturing routes for thin-film transistor liquid crystal displays (TFT-LCD), colour filter arrays, photo spacers, planarization layers, and touch sensor integration. Product-specific numerical data should be verified against the supplier’s current technical data sheet and material safety data sheet because formulation variants for different fab generations may shift the processing window.
| Application scenario | Primary compliance standard | Test condition or clause | Typical acceptance limit |
|---|---|---|---|
| TFT array positive photoresist | RoHS Directive 2011/65/EU | Annex II restricted substance screening | Cd < 100 ppm; Pb < 1000 ppm |
| Color filter negative photoresist | ISO 7724-2 | Chromaticity over CIE Illuminant C | Δx ≤ ±0.010; Δy ≤ ±0.010 |
| Black matrix negative photoresist | IEC 62321-3-1:2013 | XRF screening of cured film | Pb, Hg, Cd, Cr(VI) below RoHS limits |
| Photo spacer negative photoresist | ISO 14577-1 | Indentation modulus at 23 °C | Height CV < 2.5% |
| Overcoat negative photoresist | ISO 13468-2 | Total luminous transmittance 400–700 nm | Transmittance > 95% |
| On-cell touch sensor sacrificial mask | IEC 62321-3-1:2013 | Restricted substance screening | RoHS compliance after stripping |
In TFT-LCD array fabrication, the positive-tone LCD photoresist is applied by slit coating to glass substrates from Gen 5 (1100 mm × 1300 mm) to Gen 10.5 (3370 mm × 2940 mm). Coating uniformity across the full platen is maintained within ±3% of target thickness, typically 1.3–2.0 μm for gate and source-drain metal etch processes and 2.5–4.0 μm for thicker data-line electroplating resists. The photoresist is diluted with propylene glycol monomethyl ether acetate (PGMEA) to a solids content of 18–25 wt%; viscosity is adjusted to 7–15 mPa·s at 25 °C for slit nozzle operation. Prebake at 90–110 °C for 90–120 s on a hotplate removes residual solvent without thermal decomposition of the photoactive compound. UV exposure at 365 nm i-line using a mirror projection aligner or step-and-repeat scanner delivers 20–80 mJ/cm², depending on feature size and photoresist sensitivity. Development with 2.38 wt% tetramethylammonium hydroxide (TMAH) at 23 ± 1 °C removes exposed regions, leaving patterns with critical dimension loss below 0.15 μm. Postbake at 120–140 °C hardens the resist for wet etch resistance. Batch-to-batch viscosity drift above 2% on the coater pump causes striation defects; hotplate temperature inhomogeneity of ±2 °C across the substrate produces post-develop CD variation of 0.1–0.2 μm on 3 μm lines.
Compliance in this segment is governed by RoHS Directive 2011/65/EU Annex II for cadmium, lead, mercury, and hexavalent chromium; REACH Regulation (EC) No 1907/2006 for SVHC disclosure; and ISO 14644-1 Class 5 for photoresist handling. Formulation addition ratio for coating is 18–25 wt% active solids, 75–82 wt% PGMEA, with 0.01–0.1 wt% fluorosurfactant as leveling agent. Downstream production sequence comprises sputter deposition, photoresist coating, prebake, mask alignment exposure, development, postbake, wet etching, and resist stripping. Terminal products include TN, IPS, and VA LCD panels for televisions, desktop monitors, notebook computers, and automotive instrument clusters.
Color filter fabrication on indium tin oxide (ITO)-coated glass uses a negative-tone photoresist system in which Beixu Electronics LCD photoresist is supplied as a pigment-loaded photocurable liquid with red, green, and blue variants. The colour filter segment requires a final pixel film thickness of 1.5–2.5 μm after postbake, with chromaticity coordinates controlled to Δx ≤ ±0.010 and Δy ≤ ±0.010 against the panel maker’s target under CIE Standard Illuminant C. Compliance is verified by ISO 7724-2 for colour measurement and ASTM E308 for computing tristimulus values; optical density and transmittance are evaluated under ASTM D1003 and ISO 13468-2. Formulation addition ratios for colour filter resists typically fall within 15–30 wt% pigment dispersion, 4–10 wt% alkali-soluble acrylic binder, 3–8 wt% multifunctional acrylate monomer, 0.5–2.0 wt% photoinitiator, and 55–70 wt% PGMEA/cyclohexanone solvent. The coating solution is adjusted to a final solid content of 15–25 wt% for slit coating. Downstream processing consists of RGB subpixel coating, vacuum drying, prebake at 90–110 °C, proximity exposure through a chromium mask at 100–300 mJ/cm², post-exposure bake at 100–120 °C, development with pH-controlled aqueous-alkaline solution, and postbake at 220–240 °C for full crosslinking. Terminal finished products include colour filter arrays laminated or integrated into smartphone, tablet, monitor, and television LCD modules. The primary process conflict is between pigment loading and photocurability: if pigment concentration exceeds 30 wt%, UV attenuation lowers bottom-cure conversion and causes undercut in fine pixel lines; below 15 wt%, colour saturation and thermal stability fall outside panel specification.
The black matrix layer is deposited between RGB subpixels to suppress light leakage and improve contrast ratio. Beixu Electronics LCD photoresist for black matrix applications is a negative-tone system loaded with carbon black or black pigment dispersion in an acrylic monomer-binder matrix. Optical density per micrometre is the critical process control parameter; typical panel specifications require OD ≥ 3.0/μm at 550 nm, with total film thickness after postbake between 0.8 μm and 1.2 μm. Formulation addition ratios are typically 18–28 wt% carbon black dispersion, 4–8 wt% acrylic binder, 3–6 wt% multifunctional acrylate, 0.5–1.5 wt% photoinitiator, and 60–70 wt% solvent. The downstream production sequence includes cleaning, slit coating, vacuum dry, prebake at 90–110 °C, UV exposure at 365 nm with 100–250 mJ/cm², post-exposure bake at 100–120 °C, spray or puddle development with TMAH, and postbake at 220–240 °C.
Compliance is anchored to IEC 62321-3-1:2013 for RoHS screening, ASTM D1003 for luminous transmittance and haze, and ISO 13468-2 for total transmittance of the cured film. Terminal products include high-contrast LCD panels for automotive displays, medical monitors, high-resolution smartphones, and ambient-light-readable industrial human-machine interfaces. The known threshold risk in this segment is the trade-off between optical density and developability: carbon black loading above 28 wt% reduces solubility in unexposed areas, increasing residue defects and tapering at the matrix edge; loading below 18 wt% drops OD below 3.0/μm and causes pixel-to-pixel light leakage. Published data for this specific configuration is limited; the stated ranges reflect general industrial practice for black matrix negative photoresists.
Photo spacer formation directly on the colour filter or TFT substrate is one of the most dimensionally constrained operations in LCD fabrication because the spacer height defines the liquid crystal cell gap. Beixu Electronics LCD photoresist for photo spacers is a negative-tone formulation based on acrylic or epoxy-acrylate chemistry with postbake heights from 2.0 μm to 4.0 μm. Across a Gen 8.5 substrate, spacer height variation is required to remain within ±0.05 μm, equivalent to a coefficient of variation of 1.5–2.5%. Formulation addition ratios are typically 10–20 wt% acrylic or epoxy-acrylic binder, 5–10 wt% multifunctional acrylate or epoxy monomer, 0.5–2.0 wt% photoacid generator, and 65–80 wt% solvent; final solids are adjusted to 18–25 wt%. The production sequence includes slit coating, vacuum drying, prebake at 90–100 °C, UV exposure through a photomask with circular or polygonal spacer patterns at 150–300 mJ/cm², post-exposure bake at 100–120 °C for 120 s, TMAH development, and postbake at 220–250 °C for thermal crosslinking.
Compliance and performance verification use ISO 14577-1 for instrumented indentation hardness, ASTM D3359 method B for cross-cut adhesion, and ISO 2409 for adhesion classification. Terminal products are TN, IPS, and VA LCD panels for televisions, monitors, mobile devices, and automotive display assemblies requiring uniform cell gap and resistance to panel flexure. The depth of focus and UV dose latitude are the principal process conflicts: if photo spacer top width is below 8 μm after development, spacer deformation under panel lamination exceeds 0.05 μm and causes cell gap mura; if exposure dose exceeds 300 mJ/cm², crosslink density rises and elastic recovery drops below acceptable panel durability limits.
In high-aperture-ratio TFT-LCDs, the organic overcoat layer functions as a dielectric planarization film between the thin-film transistor array and the pixel electrode. Beixu Electronics LCD photoresist in this application is a transparent negative-tone acrylic formulation, coated to a cured thickness of 2.0–6.0 μm. The material is adopted when the design calls for lower surface topography and higher pixel aperture than plasma-deposited silicon nitride passivation can provide. Compliance is verified by ASTM D1003 with haze specified below 0.5%, ISO 13468-2 with total transmittance above 95% over 400–700 nm, and IEC 62321-3-1:2013 for RoHS substance screening. Formulation addition ratios are typically 5–10 wt% alkali-soluble acrylic resin, 2–5 wt% multifunctional acrylate monomer, 0.3–1.0 wt% photoinitiator, and 80–90 wt% solvent, giving a final solid content of 12–18 wt%.
Downstream processing comprises slit coating, vacuum drying, prebake at 80–100 °C, UV exposure at 150–250 mJ/cm², post-exposure bake at 100–120 °C, development with TMAH or potassium hydroxide based developer, and postbake at 220–250 °C. Via holes are patterned simultaneously at 10–20 μm diameter to connect source electrodes to pixel electrodes through the planarized overcoat. Terminal products include high-aperture-ratio LCD panels for notebook PCs, monitors, televisions, and touch-integrated display modules. The main processing boundary is thermal stability: postbake temperature above 250 °C can induce yellowing and reduce transmittance below 95%, while insufficient postbake below 220 °C leaves residual solvent and lowers outgassing performance in subsequent vacuum deposition.
Capacitive touch sensor integration into LCD modules has shifted toward on-cell architectures where the sensor electrode pattern is defined directly on the colour filter glass. In this segment, Beixu Electronics LCD photoresist is used as a positive-tone or negative-tone sacrificial mask for patterning low-resistance ITO or metal bridge layers. The photoresist is selected for compatibility with acidic ITO etch solutions containing hydrochloric acid/nitric acid mixtures or ceric ammonium nitrate, and for clean stripping in alkaline or solvent-based removers without attacking underlying organic overcoat layers. Formulation addition ratios depend on tone: positive-tone systems are diluted to 15–20 wt% solids and develop in 2.38 wt% TMAH; negative-tone systems are coated at 10–18 wt% solids and developed in pH-controlled aqueous developer. Compliance is governed by RoHS Directive 2011/65/EU, REACH Regulation (EC) No 1907/2006, and IEC 62321-3-1:2013 for restricted substances.
The production process includes cleaning of colour filter glass, sputtering of ITO or metal bridges, photoresist coating, prebake at 90–110 °C, UV exposure with 60–150 mJ/cm² for positive-tone or 100–250 mJ/cm² for negative-tone, development, postbake, etching, and photoresist stripping. Minimum touch sensor linewidths are typically 10–25 μm, with short-term linewidth capability down to 5 μm for advanced on-cell designs. Terminal products include touchscreen LCD modules for smartphones, tablets, automotive centre consoles, and industrial panel PCs. The compatibility constraint is etch selectivity between photoresist and underlying polyimide or overcoat layers; a process change from ITO wet etch to metal-lift-off chemistry can shift the required postbake window by ±10 °C. Amine-based additives in strippers should be avoided because they can cause premature crosslinking in negative-tone residues and increase contact pad contamination. Fab-specific qualification is required before transfer because published data for this particular etch sequence is limited.
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Beixu Electronics supplies a liquid photoresist platform for thin-film transistor liquid crystal display photolithography. The product range is organized by functional layer architecture rather than a single numeric designation: positive-tone diazonaphthoquinone-novolac resist for array electrode patterning, pigmented acrylic resist for RGB color filter arrays, carbon-black loaded black matrix resist for light-shielding layers, and photo spacer resist for cell gap formation. Functional grades are identified by the manufacturer’s internal model codes for array, RGB, black matrix, and photo spacer layers, with the current datasheet referenced for the active code suffix. The materials are dispensed as filtered, low-particle liquids onto Gen 5 through Gen 10.5 glass substrates. Application occurs on standard TFT photolithography lines using slot-die or spin coating, proximity or stepper exposure, aqueous tetramethylammonium hydroxide development, and thermal postbake. Differences from other LCD photoresists center on solvent composition, metal ion control, thermal decomposition profile, and compatibility with Cu/Mo/Al source-drain metallization stacks. Published data for some direct performance comparisons between the Beixu product and imported grades is limited; the following sections therefore describe class-level technical characteristics and controlled process parameters.
Lot-release acceptance data for positive-tone TFT array resists in this class include kinematic viscosity, percent solids, density, moisture, trace metal concentration, and particle counts after point-of-use filtration. The values below are representative of controlled lot-release specifications for TFT array positive-tone photoresists; the manufacturer’s current certificate of analysis should be consulted for grade-specific limits.
| Parameter | Typical class range | Test method |
|---|---|---|
| Kinematic viscosity at 25 °C | 8–18 mm²/s | ASTM D445-24 |
| Solids content | 22–32 wt% | ASTM D2369-20 |
| Density | 0.98–1.15 g/cm³ | ISO 1183-1:2019 |
| Moisture | ≤0.5 wt% | ASTM E203-24 |
| Particle count after 0.05 µm filtration | ≤50 particles/mL at ≥0.5 µm | ASTM F312-08 |
Resist containers are filled in an ISO 14644-1:2015 Class 5 cleanroom to limit airborne particle contamination. Filtration is performed through polytetrafluoroethylene membranes, and the dispensing system is maintained at positive pressure with point-of-use filter housing integrity testing. Trace metal control is critical for TFT backplane reliability because sodium and potassium above 50 ppb can shift threshold voltage in amorphous silicon and oxide semiconductor transistors.
For positive-tone array resists, lithographic response is specified by film thickness, prebake temperature, exposure dose, post-exposure delay, developer concentration, and developer temperature. The process window is narrow: prebake hot plate temperature variation must remain within ±2 °C across the plate because insufficient solvent removal leaves residual solvent that retards dissolution, whereas excessive prebake reduces photoactive compound sensitivity and increases required exposure dose. Typical exposure dose for 1.5–2.0 µm films lies in the range 30–120 mJ/cm² on broadband g/h/i-line exposure tools. Development uses 2.38 wt% tetramethylammonium hydroxide at 23±0.5 °C for 60–90 s puddle or spray processes.
Operational boundaries include pre-drying at relative humidity above 60% because absorbed moisture on the coated glass or in the resist film causes developer scum and reduced adhesion. The resist should not be exposed to amine-containing vapors prior to development; residual amines from adjacent curing ovens or adhesion promoter stations accelerate dark erosion and foot rounding at the resist-substrate interface. On production lines, post-exposure delay exceeding 10 minutes in ambient air can shift critical dimensions by more than 0.2 µm due to water uptake and acid diffusion; therefore, track transfer time between exposure and developer is typically maintained below 300 seconds. Adhesion is evaluated after hardbake by cross-hatch tape pull per ASTM D3359-17; class 5B is required on cleaned glass and Mo/Al substrates.
On Gen 8.5 coater/developer tracks equipped with slit coaters and reduced-pressure drying chambers, film thickness uniformity across a 2,200 mm × 2,500 mm substrate is governed by solvent vapor extraction rate, chuck temperature ramp, and resist dispense rheology. Batch records from TFT array lines show that a 0.05 µm change in coating gap or a 0.5 rpm spin-speed error at the edge bead removal step can generate edge thickness deviation exceeding 3%, which corresponds to post-develop linewidth variation above 0.15 µm after wet etch. Failure modes observed on manufacturing equipment include streaking from agglomerated pigment particles, comet defects from filter housing contamination, striations caused by localized solvent evaporation, and edge bead residues from insufficient rinsing with propylene glycol monomethyl ether acetate. Resist dispense line pressure is maintained below 1.5 bar to avoid shear-induced particle shedding from point-of-use membranes. Slit nozzle tip clearance is verified with laser displacement sensors at every lot change; a deviation of ±5 µm triggers recalibration of the coat gap. These data reflect production-scale behavior, not laboratory spin-coater results.
Developer concentration below 2.25 wt% produces incomplete dissolution of the exposed positive-tone resist in via or contact hole regions, leaving scum that persists after post-develop rinse. The resulting residue increases contact resistance in source-drain via chains and lowers panel probe yield. Equilibrium between developer bath concentration and dissolved resist loading must be maintained by conductivity monitoring and automatic replenishment. Batch data indicate that a developer pH shift from 13.4 to 13.2 correlates with a 15–20% reduction in development rate at 23 °C. The production limit is therefore set at 2.38±0.10 wt% TMAH. At the high end, developer concentrations above 2.50 wt% accelerate dark erosion and degrade linewidth uniformity. Developer temperature is controlled at 23±0.5 °C; the drop in development rate at 20 °C is sufficient to leave bridges between 3 µm lines and spaces, while operation above 25 °C produces excessive CD loss and undercut on Cu/Mo stacks. Developer normality is verified by titration per ASTM E200-23.
Spray development chambers require exhaust manifold pressure differentials of 50–100 Pa relative to the cleanroom to prevent developer mist migration into adjacent process modules. Incompatibility with amine-based additives is documented: residual monoethanolamine from stripper tanks raises the pH of the developer bath and accelerates attack on aluminum capping layers. The resist must be segregated from solvent-based color filter resists in shared waste drain lines because acrylic monomer carryover forms insoluble residues in TMAH-neutralized wastewater streams.
Thermogravimetric analysis of positive-tone novolac resists of this class shows onset of thermal decomposition between 180 °C and 220 °C. Postbake at 130–150 °C does not fully crosslink the matrix but densifies the film and reduces moisture uptake. The photoactive compound decomposes between 120 °C and 150 °C, generating nitrogen gas; postbake exhaust must be maintained at 100–150 m³/h per oven to prevent condensation of diazo decomposition products on chamber walls. Excess postbake above 160 °C causes measurable thickness loss and interfacial voiding on copper surfaces. Film thickness is determined by interferometry per ISO 2808:2019 before and after postbake; thickness loss above 5% is cause for lot rejection.
Beixu Electronics positive-tone array photoresist differs from negative-tone acrylic formulations used for color filter and black matrix layers in crosslinking mechanism, development chemistry, and thermal budget. The table below summarizes class-level differences; values should be treated as representative for production grades, not as a single lot certificate.
| Property | Positive-tone TFT array resist | Negative-tone acrylic RGB/BM resist | Test method |
|---|---|---|---|
| Viscosity at 25 °C | 8–18 mm²/s | 15–30 mm²/s | ASTM D445-24 |
| Solids content | 22–32 wt% | 18–28 wt% | ASTM D2369-20 |
| Prebake range | 90–110 °C | 80–100 °C | ISO 2808:2019 |
| Postbake range | 130–150 °C | 220–250 °C | Thermogravimetric analysis |
| Resolution | 2–5 µm | 3–10 µm | SEM linewidth |
| Adhesion on Mo/Al | 5B | 4B–5B | ASTM D3359-17 |
Unlike some imported negative-tone color filter resists, the positive-tone array grade is stripped in amine-based strippers at 50–65 °C, while crosslinked acrylic grades require oxygen plasma ashing or solvent swelling followed by megasonic cleaning. The array resist also contains lower photoacid generator loading than chemically amplified deep-UV resists, reducing the potential for substrate acid contamination after removal.
Solvent compatibility for the Beixu LCD photoresist platform is defined by the edge bead remover and rinse chemistry. The positive-tone array resist is diluted with propylene glycol monomethyl ether acetate or propylene glycol monomethyl ether; methyl ethyl ketone and acetone are not recommended for dilution because rapid evaporation at the nozzle creates crystal residues. Post-develop rinsing uses deionized water meeting ASTM D5127-18 Type E-1.2 quality, with a resistivity of 18.2 MΩ·cm at 25 °C. Incompatibilities include contact with alkaline stripper baths containing monoethanolamine above 70 °C, which attacks glass edges and releases silicate particles into subsequent resist lots. The product’s metal ion specification is relevant for TFT backplanes because sodium and potassium above 50 ppb can shift threshold voltage in amorphous silicon and oxide semiconductor transistors. End users should verify that the selected grade is compliant with local wastewater regulations and with the fab’s SEMI S2 equipment integration review.
