| HS Code | 651652 |
| Product Name | IC-Stripper Electronic/EL Grade |
| Physical State | Liquid |
| Appearance | Clear, colorless to very light yellow liquid |
| Odor | Mild, characteristic organic/amine-like odor |
| Ph | 11.0 to 12.0 (concentrate) |
| Specific Gravity | 1.02 to 1.06 at 25°C |
| Density | 1.04 g/cm³ at 25°C |
| Boiling Point | Approximately 150–170°C at 760 mmHg |
| Flash Point | Above 93°C (closed cup) |
| Vapor Pressure | Less than 0.5 mmHg at 20°C |
| Vapor Density | Greater than 1 relative to air |
| Solubility In Water | Fully miscible |
| Water Content | Typically less than 0.5% |
| Metal Impurities | Controlled to low parts per billion (ppb) levels |
| Shelf Life | 12 months from date of manufacture when stored properly |
As an accredited IC-Stripper Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | IC-Stripper Electronic/EL Grade is packaged in sealed, contamination-free containers, available in 1-liter and 5-liter quantities for precise use. |
| Container Loading (20′ FCL) | 20' FCL loading of IC-Stripper Electronic/EL Grade: secure chemical drums on pallets, upright, with proper dunnage and hazard segregation. |
| Shipping | IC-Stripper Electronic/EL Grade ships as a regulated chemical requiring hazard-compliant packaging and labeling. Use sealed, corrosion-resistant containers, protect from moisture and extreme temperatures, and follow IMDG/IATA ground or air freight protocols. Ensure proper documentation for safe, traceable delivery to semiconductor facilities. |
| Storage | Store IC-Stripper Electronic/EL Grade in a cool, dry, well-ventilated area away from direct sunlight and incompatible materials. Keep the original container tightly sealed when not in use, protected from moisture, heat, and ignition sources. Follow manufacturer’s temperature guidelines and maintain proper labeling to ensure purity and safe handling. |
| Shelf Life | Shelf life is typically 12 months from manufacture date when stored sealed in original containers at controlled room temperature. |
IC-Stripper Electronic/EL Grade is specified for photoresist and dry film removal where the remaining metal, dielectric, or semiconductor surface must meet low-defect and low-ionic-contamination limits. The application profile is divided according to the downstream process module, the resist type, and the final device or package substrate, because each module imposes a different thermal ceiling, dilution tolerance, and endpoint detection method. The operational limits listed in the following modules are derived from production-scale wet-bench and in-line equipment logs and are not to be read as generic strip chemistry ranges.
At the post-etch strip module, the bath is charged with 100% as-supplied IC-Stripper Electronic/EL Grade and maintained at 80–85 °C with a thermal band of ±1.0 °C in a quartz immersion tank equipped with titanium immersion heaters. Addition ratio adjustments for viscosity reduction are confined to 5–10 vol% ultrapure water at 18.2 MΩ·cm; exceeding 10 vol% water causes the strip rate on boron- and arsenic-implanted crust to fall by more than 20%, and the bath must then be drained or replenished. Wafers are processed in 25-wafer cassettes through a sequence of DI-water pre-rinse, immersion stripping with 950 kHz megasonic irradiation at 0.8–1.2 W/cm², intermediate isopropanol rinse, and single-wafer spin drying under filtered nitrogen at 0.3 MPa. Bath turnover is maintained by bleed-and-feed replenishment at 6–8 vol% per lot based on refractive index and dissolved solids; the recirculating filter is a 0.05 µm PTFE membrane, and the filter pressure drop is recorded at line-level trend. The heavy crust produced by fluorocarbon plasma etch and high-dose ion implantation is removed by swelling and delamination, not by simple dissolution. Compliance is bounded by SEMI S2 venting and effluent criteria and by SEMI C27 high-purity photoresist stripper specifications for metal cations and particle counts. Finished terminal products include 300 mm FinFET and gate-all-around logic wafers, DRAM and 3D NAND memory arrays, and embedded memory on logic platforms.
Production-scale copper pillar and redistribution-layer lines observe that the stripper bath load rises sharply after electroplating because thick dry film resists of 25–80 µm from the pattern mask drag out copper ions, sulfate, and organic brightener decomposition products. The immersion bath is therefore operated at 70–75 °C in high-density polypropylene tanks, not quartz, to avoid silanol leach and to allow the corrosion inhibitor package to remain adsorbed on the copper pillar foot. At temperatures above 80 °C, the passivation efficiency of the inhibitor drops and copper etch increases from a qualified baseline below 0.5 Å/min to 2–3 Å/min, measured by four-point probe before and after strip. The formulated addition ratio for single-wafer spray tooling is 85–90 vol% stripper to 10–15 vol% deionized water; immersion baths remain at 100% active stripper with drag-out makeup of 0.8–1.2 L per 25-wafer lot, adjusted by conductivity and amine titration. Endpoint is determined by dark-field microscopy at 200× for resist foot residue around the pillar base, and profilometry across the pillar array is used to confirm copper height loss below 0.5 µm per pass. The process is audited under SEMI S2 chemical safety, IEC 61340-5-1 electrostatic discharge control, and the facility's copper waste treatment permit. Finished terminal product types include flip-chip chip-scale packages, fan-out wafer-level packages, high-bandwidth memory interposer stacks, and copper-pillar-bumped application processors.
| Process module | Bath temperature | Addition ratio | Endpoint criterion | Equipment |
|---|---|---|---|---|
| Post-implant / post-etch resist strip | 80–85 °C | 100% as supplied, ≤10 vol% DI water | Light microscopy 200×; no residual foot > 0.1 µm | Quartz tank, 950 kHz megasonic, 0.05 µm PTFE filter |
| Copper pillar / RDL thick resist strip | 70–75 °C | 85–90 vol% spray, 100% immersion | Profilometry Cu loss < 0.5 µm per pass | High-density polypropylene tank, single-wafer spray, titanium heaters |
| MEMS sacrificial release | 60–65 °C | ≥90 vol% active stripper | Optical interferometry on test die | Class 5 bath, 0.05 µm filter, megasonic < 0.5 W/cm² |
Within surface micromachining release baths, the sacrificial photoresist is covered by oxide or nitride thin films, so the stripper enters only through narrow etch-release channels. The process uses IC-Stripper Electronic/EL Grade as supplied at 60–65 °C; dilution below 90 vol% active stripper is avoided because the surface tension shift restricts penetration through channels narrower than 5 µm and can lengthen release time unpredictably. The bath is held in a Class 5 environment per ISO 14644-1:2015 and circulated through 0.05 µm filtration. Megasonic agitation is not used on fragile beams and springs unless the minimum feature size is above 10 µm; when used, the power density is capped at 0.5 W/cm² to prevent cavitation-induced feature collapse. Release times of 1–4 h are normal for sacrificial layers of 5–20 µm, and the endpoint is checked by optical interferometry on wafer test dies. After release, the wafer is transferred through isopropanol or another low-surface-tension intermediate rinse to suppress capillary stiction before final DI-water rinse and spin drying. The main compatibility boundary is aluminum bond pad exposure: the bath will attack aluminum if the bond pad is not protected by an oxide or nitride cap. Finished terminal products include inertial sensors, gyroscopes, pressure transducers, inkjet print heads, and DLP micromirror arrays.
After pattern plating on semi-additive flow substrates, the dry film resist is removed in horizontal conveyorised modules directly coupled to the plating line. The stripper is sprayed at 50–55 °C through flat-fan nozzles at 1.5–2.0 bar in a reciprocal oscillation pattern; the addition ratio is 80–90 vol% active stripper to 10–20 vol% deionized water, with conductivity-controlled replenishment. The lower temperature is set by the ABF dielectric: operation above 55 °C causes ABF surface swelling, and laser profilometer roughness relative to the pre-strip baseline rises above 0.2 µm Ra, which is nonconforming for fine-line lamination. After stripping, the substrates pass through a counterflow cascade rinse, an acid neutralizer stage to prevent alkaline carryover staining of copper traces, and an air-knife dry zone. Copper trace adhesion is verified by tape testing per IPC-TM-650 2.4.1, and the substrate lot is released against IEC 61249-2-22 for halogen-free copper-clad cores and IPC-4101D base material requirements. Finished terminal product types include chip-scale package substrates, flip-chip ball grid array substrates, system-in-package interposers, and thin-core module cards.
Thermal evaporation in III-V lift-off sequences deposits gold, titanium, platinum, or nickel over a patterned resist template, and the wet stripper must dissolve the template without undercutting the metal stack or leaving edge flags. The bath temperature is held at 55–60 °C; excursions above 70 °C cross the onset of resist carbonization for carbonyl-containing positive resists, after which the material converts into a dark insoluble residue and the lot is quarantined for residue analysis. The addition ratio is 95 vol% IC-Stripper Electronic/EL Grade to 5 vol% of a formulated wetting additive approved for the specific metal stack; no water dilution is permitted. The lift-off endpoint is determined by reflected-light inspection for edge curl and by 40 kHz ultrasonic agitation for 10–15 min in a bath filtered to 0.05 µm. The process is operated under SEMI S2 chemical handling and metrology controls for metal purity on compound semiconductor surfaces. Published data for this exact metal stack configuration is limited, so qualification on GaAs and GaN programmes uses a tungsten etch test coupon to confirm that the stripper does not shift the tungsten hard mask. Finished terminal product types include GaAs and GaN power amplifiers, HEMTs, VCSELs, and optical modulator chips.
Indium tin oxide edge profile shift in TFT array manufacturing is controlled by limiting stripper contact after the molybdenum/aluminum wet etch step. The in-line shower system uses a dilution ratio of 60–80 vol% stripper to 20–40 vol% deionized water at 45–50 °C, with a contact time of 60–120 s depending on the photoresist thickness and the etch residue load. The bath is filtered through 0.05 µm capsules, and the amine concentration is monitored by refractive index and pH; pH below 11.0 indicates lost activity and triggers replenishment dosing. The cleanroom operation follows ISO 14644-1:2015 Class 5, and the material's outgassing signature is compared with ASTM E 595-15 limits before subsequent cell assembly. Finished terminal product types include thin-film-transistor backplanes for LCD and OLED displays, as well as flexible display substrates on polyimide where the strip chemistry must not craze the plastic carrier.
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IC-Stripper Electronic/EL Grade is a formulated organic stripping fluid for post-etch and post-ash residue removal from silicon wafers, electroplated copper redistribution layers, and through-silicon via test vehicles. The product designation identifies an electronic-grade supply form controlled for trace-metal content, sub-micrometre particle burden, chloride and sulfate carryover, water uptake, and nonvolatile residue. Model suffixes attached to the base IC-Stripper designation are assigned by container volume, wetted-material configuration, and point-of-use filtration rating. The suffix is not interchangeable with technical-grade stock-keeping units. Lot release data include density measured according to ASTM D4052-18a, water content by ASTM E203-16, trace-metal concentrations by SEMI C43-compatible inductively coupled plasma mass spectrometry, and particle counts with a liquid-borne optical particle counter calibrated to ISO 21501-2. Reported metal units are mass fractions in ng/g for sodium, potassium, aluminum, calcium, copper, iron, magnesium, and zinc. Particle counts are recorded as cumulative counts above 0.1 µm and 0.2 µm.
Because the product is used in device fabrication, no single numerical specification applies across all fabs. A valid release limit is node-specific and is derived from electrical test data after strip and clean. Where porous low-k dielectrics are present, qualification is performed on patterned coupons before production use. Published data for this specific configuration is limited when the dielectric contains high organic-porogen content; therefore, electrical leakage and breakdown voltage measurements are required after the first lot is introduced. The certificate of analysis is the controlling document, not the product data sheet.
Packaging is executed in an ISO 14644-1 Class 5 cleanroom using fluoropolymer or fluoropolymer-lined containers to limit extractable contamination. Container headspace is purged with filtered nitrogen. The product is stored at 15 °C to 25 °C away from direct sunlight and ignition sources. Opened containers are blanketed with dry nitrogen when ambient relative humidity exceeds 60 % RH to reduce moisture uptake. Unopened shelf life is assigned by the manufacturer after accelerated aging; no universal shelf-life value applies to all package sizes.
The exact solvent composition is proprietary to the manufacturer. Typical electronic-grade stripper formulations may contain one or more polar aprotic solvents, glycol ethers, surfactants, and corrosion inhibitors, but the presence and ratio of these species are not controlled by the generic product description. Because the product is a formulated mixture, the safety data sheet is the only valid source for hazard classification, flash point, and personal protective equipment requirements. The flash point is determined by ASTM D7094-17 or equivalent closed-cup method and is reported on the safety data sheet.
The separation is not created by a change in solvent strength. General-purpose strippers can contain ionic contaminants, suspended particles, and high-boiling oligomers that remain after spin-rinse drying. In contrast, the electronic-grade supply form is filtered through sub-micrometre membranes, filled in an ISO 14644-1 Class 5 environment, and analyzed for cations that affect gate oxide integrity and copper electromigration. Sodium and potassium are controlled because they degrade post-etch passivation integrity. Iron and copper are controlled because they can deposit on silicon and alter recombination lifetime. Aluminum and calcium are monitored because they contribute to particle defects after dry etching. The lot certificate includes the analytical close-out for each of these species rather than a single total metals value.
General-purpose strippers may be sold on the basis of solvency alone, with no ion-chromatography or particle-count close-out. For wafer-level use, that absence creates an uncontrolled variable. In production, a residue of nonvolatile organic material measured gravimetrically above the lot limit correlates with carbonaceous defects after the subsequent etch or deposition operation. The electronic-grade lot release therefore includes gravimetric nonvolatile residue expressed in mg/kg. Lot-to-lot variation in trace metals is more likely to be observed at the ICP-MS close-out than in bulk solvent assay because the impurity sources are raw-material and packaging related. The following release-control matrix indicates the measurement basis for the electronic-grade designation:
| Control parameter | Analytical or engineering reference | Reported lot record |
|---|---|---|
| Density | ASTM D4052-18a oscillating U-tube | Certificate of analysis |
| Water content | ASTM E203-16 Karl Fischer titration | Certificate of analysis |
| Trace metals, including Na, K, Al, Ca, Cu, Fe, Mg, Zn | SEMI C43 ICP-MS | ng/g |
| Liquid particle count | ISO 21501-2 optical particle counter | Cumulative counts at 0.1 µm and 0.2 µm |
| Anions, including Cl, NO3, SO4, Br | Ion chromatography | mg/kg |
| Nonvolatile residue | Gravimetric after evaporation | mg/kg |
In copper pillar and redistribution-layer processing, the stripper is applied after electroplating and photoresist masking to remove the thick resist mold and organic plating residues. The bath is monitored for metal accumulation because copper and tin may dissolve from exposed metal surfaces. Inductively coupled plasma analysis of the bath at regular intervals detects copper and silver buildup before the bath produces metal plating on dielectric surfaces. A production-scale failure is the formation of a brown haze on the wafer edge when bath copper exceeds the qualified limit; the haze is removed by fresh bath exchange and point-of-use filter replacement.
In recirculated immersion baths, the wetted path is constructed from fluoropolymer or high-density polyethylene. Point-of-use filtration is installed downstream of the recirculation pump, with a membrane rating of 0.05 µm or 0.10 µm depending on defect density requirements. On production-scale tools, a frequent failure mode is particle shedding immediately after filter cartridge replacement. Until the filter is flushed to waste with the stripper for a volume equal to several housing turnovers, the online optical particle counter may exceed baseline. The cartridge is conditioned with the same fluid because solvent compatibility affects the membrane support and the pleat pack. Differential pressure across the housing is recorded at a constant flow rate; a sustained increase of more than 70 kPa from the post-installation baseline is used as a bath-exchange trigger in some production lines, though the limit is tool-specific.
Megasonic or ultrasonic energy is applied at 40 kHz to 80 kHz for immersion removal of heavily cross-linked resist. The bath is blanketed with filtered nitrogen to limit moisture uptake and oxidative degradation. If the tool is idle for more than 4 hours, the bath is sampled for water content before production wafers are committed. Water content above the qualified lot limit depresses residue dissolution and can promote metal corrosion in exposed copper lines. Batch-to-batch variation in cleaning rate is assessed with a send-ahead wafer carrying a cured resist layer of known thickness; the endpoint is verified by optical microscopy after rinse and dry.
Spray-tool processing of 300 mm wafers uses a single-wafer chamber with temperature-controlled liquid delivery. The product is heated through an in-line heat exchanger immediately before the dispense nozzle. A production-scale residue pattern appears as an edge ring when the exhaust balance is not sufficient to remove vapor from the chamber; the condensed solvent drains back onto the wafer edge and redeposits residue. The defect is observed as a contact-angle boundary under optical inspection. Corrective action is to adjust exhaust and reduce dispense volume at the edge zone while maintaining center coverage. In some tool configurations, dispense pressure is set from 0.10 MPa to 0.30 MPa, but the value must be qualified for the specific nozzle and fluid temperature.
For organosilicate low-k films with porosity above 25 %, processing temperature is typically held below 65 °C to limit solvent penetration and dielectric-constant shift. A higher temperature shortens resist removal time but may cause pore swelling and an increase in line-to-line leakage. The qualified process window is established by measuring capacitance, refractive index, and Fourier-transform infrared spectra on patterned wafers after ashing and wet strip. In some production lines, a 10 °C reduction in bath temperature extends the required immersion time by approximately 1.5 to 2.0 times for high-dose implanted resist. Published data for this specific configuration is limited; the response is resist- and implant-dependent and must be confirmed with send-ahead wafers.
When processing is performed in an open tank, evaporative loss changes the solvent balance. The bath should be sampled when bulk density shifts by more than 0.005 g/cm³ from the initial lot value as measured by ASTM D4052-18a. Such a shift does not confirm failure, but it triggers compositional analysis and metal recheck before further wafer processing. Replenishment with fresh product is governed by bath life studies, not by color change alone. For metal-oxide-selective removal, the stripper is not a substitute for oxygen plasma ashing; it follows plasma as a wet residue-removal step. When processing thick resists without plasma, higher temperature or longer time is used, but the acceptability is determined by electrical test structures rather than by visual endpoint alone.
Fluoride-containing strippers are excluded from metal stacks containing exposed aluminum bond pads, titanium nitride barriers, or tantalum nitride liners because fluoride-bearing solutions attack these layers. The IC-Stripper Electronic/EL Grade is positioned for copper and aluminum interconnect structures if the selected formulation is free of hydrofluoric acid and fluoride salts. This differentiates it from aggressive residue removers that rely on ammonium fluoride or buffered oxide etch chemistry. Compared with acetone and isopropanol mixtures, the electronic-grade stripper is controlled for low metallic impurity carryover rather than simple solvency; acetone and isopropanol lots used in hardware cleaning often lack the same cation package and sub-micrometre particle control. Compared with N-methyl-2-pyrrolidone, the electronic-grade supply form is controlled for peroxide-former behavior and is not positioned as a laboratory solvent. Users must still verify material compatibility with exposed copper, nickel, tin-silver, and polyimide because data for this specific configuration is limited across all device designs.
At the batch-release level, the product is not a single-component solvent; therefore, evaporation can shift composition in open baths. Recovery of spent baths is not recommended because nonvolatile photoresist degradation products accumulate and can form filter cakes that alter flow distribution. Waste disposal and exhaust handling must follow local volatile organic compound requirements; the stripper is not to be mixed with hydrogen peroxide or strong acids unless the manufacturer's written compatibility matrix allows the combination. Mixing with oxidizing agents may generate heat and gas. The product is not a general solvent for polyurethane or epoxy encapsulation. Those substrates require different swelling and dissolution mechanisms, and the Electronic/EL Grade is not qualified for hardware cleaning unless the tool vendor has approved the wetted elastomers. O-rings and seals in older wet benches may contain fluorocarbon or perfluoroelastomer materials; compatibility with the specific solvent package is verified with soak coupons before use.
