| HS Code | 157327 |
| Chemical Formula | H2Te |
| Molecular Weight | 129.62 g/mol |
| Cas Number | 7783-09-7 |
| Purity | ≥99.999% (Electronic/EL Grade) |
| Appearance | Colorless gas |
| Odor | Very unpleasant; garlic-like |
| Gas Density At Stp | 5.81 g/L |
| Vapor Density Relative To Air | 4.47 |
| Melting Point | -49 °C |
| Boiling Point | -2.2 °C |
| Solubility In Water | Soluble; solution decomposes |
| Molecular Shape | Bent (C2v) |
As an accredited Hydrogen Telluride (H₂Te) Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Hydrogen Telluride, Electronic/EL Grade, packaged as a liquefied/compressed gas in a stainless steel cylinder, quantity 100 grams. |
| Container Loading (20′ FCL) | Load H₂Te Electronic/EL grade cylinders upright in a 20′ FCL, securely braced, clearly labeled, with proper hazmat documentation, ventilation, and handling precautions. |
| Shipping | Ship Hydrogen Telluride (H₂Te), Electronic/EL Grade, as a DOT-approved, valve-protected compressed gas cylinder. Label as UN 2190, toxic and flammable gas. Strictly regulate temperature, avoid moisture/air exposure, and use only certified hazardous-material carriers. Ensure leak checks, secondary containment, and compliance with all transport and safety regulations for high-purity toxic gases. |
| Storage | Store H₂Te electronic/EL grade as a liquefied/compressed gas in leak-tight, corrosion-resistant cylinders, kept upright in a cool, dry, well-ventilated area. Avoid heat, sunlight, ignition sources, and oxidizers. Maintain secondary containment and gas detection. Use only compatible valves/regulators, ensure proper labeling, and follow strict inventory rotation to prevent decomposition. |
| Shelf Life | Hydrogen Telluride is thermally unstable; shelf life is limited. Store refrigerated, use within 6 months to prevent decomposition. |
In cadmium telluride photovoltaic absorber deposition, electronic/EL grade H₂Te is metered from a 316L electropolished cylinder manifold into a low-pressure metalorganic chemical vapour deposition reactor as the tellurium source gas. Liquid diethyltellurium is replaced to eliminate alkyl carbon incorporation at the growth surface and to decouple tellurium delivery from source temperature. The tellurium-to-cadmium molar feed ratio is maintained between 1.5:1 and 2.5:1, with the higher end used when reactor pressure exceeds 100 Torr to offset hydrogen telluride thermal decomposition in the boundary layer. Deposition proceeds on transparent conductive oxide coated soda-lime glass at a substrate temperature of 320–400 °C, total pressure of 50–150 Torr, and growth rate of 1–4 µm h⁻¹. The showerhead is cooled to 80 °C to suppress gas-phase pre-reaction between H₂Te and dimethylcadmium, which otherwise produces tellurium particulate and downstream exhaust-line clogging. Gas purity is specified under SEMI C3 hydride gas limits, with cylinder change-out controlled in an ISO 14644-1:2015 class 6 cleanroom. Terminal product is the CdTe absorber film for thin-film photovoltaic modules subject to IEC 61215-1:2021 qualification testing. The main operational boundary is the requirement to keep the cylinder and manifold below 20 °C to prevent slow H₂Te decomposition into elemental tellurium and hydrogen; batch-to-batch variance is most often traced to regulator diaphragm fouling by tellurium dust when the manifold is not purged after cylinder change-out.
Mercury cadmium telluride focal-plane array epitaxy with H₂Te requires simultaneous control of mercury vacancy concentration and CdZnTe-substrate interface interdiffusion. The reactor is operated at 350–410 °C and 50–200 Torr; mercury inlet molar flow is set to an Hg/Cd ratio of 80:1 to 150:1, while the Te/Cd molar feed ratio is held at 1.0:1 to 1.5:1. Excess mercury suppresses Hg vacancy formation and allows the post-growth mercury-saturation anneal at 250–280 °C for 16–48 h to reduce native acceptor levels before diode fabrication. The use of H₂Te eliminates carbon-bearing reaction products that are observed with diethyltellurium, and this is critical for long-wavelength infrared photodiode reverse-bias dark current. Gas purity is certified under SEMI C3; focal-plane array packaging hermeticity is verified by MIL-STD-883 Method 1014.15, and wafer processing occurs in an ISO 14644-1:2015 class 5 cleanroom. Terminal products are mercury cadmium telluride photodiode arrays for 3–5 µm mid-wave and 8–12 µm long-wave infrared detectors used in thermal imaging instruments. The process boundary is the narrow Hg/Cd ratio window: below 80:1, surface roughening and mercury vacancy-related p-type levels increase, while above 150:1, mercury condensation on the downstream section can occur if exhaust temperature is not maintained above 120 °C.
For n-type doping of gallium arsenide and indium gallium phosphide heterojunction bipolar transistors, hydrogen telluride is diluted in purified hydrogen and injected downstream of the group-III introduction point to limit premature dopant depletion in the gas phase. The tellurium-to-group-III molar flow ratio is set between 1×10−7 and 5×10−5, producing net donor concentrations from 5×1016 cm−3 to 9×1018 cm−3 in GaAs and InGaP layers. The MOCVD tool runs at 550–700 °C substrate temperature, 20–100 Torr reactor pressure, and a V/III ratio of 20:1 to 100:1. A recognised process limitation is the tellurium memory effect: elemental tellurium adsorbate on reactor walls and quartz liner surfaces produces a non-abrupt doping tail, requiring purge durations of 30–120 s between doping and undoped layer growth. Gas purity is controlled to SEMI C3 specifications, wafer handling is performed in an ISO 14644-1:2015 class 5 cleanroom, and finished discrete transistors are qualified under MIL-PRF-19500. Terminal products are n-type epitaxial wafers for heterojunction bipolar transistors, high-electron-mobility transistors, and edge-emitting laser diodes operating in RF and optical communication bands.
Bismuth telluride thermoelectric thin-film deposition from H₂Te and triethylbismuth is constrained by the volatility of tellurium and the absence of a wide self-regulating stoichiometric plateau. Stoichiometric Bi₂Te₃ requires a Te/Bi molar ratio of 1.5:1, but the inlet Te/Bi molar feed ratio is deliberately maintained at 1.6:1 to 2.0:1 to compensate for tellurium re-evaporation from the growth surface. If the measured gas-phase Te/Bi ratio falls below 1.6:1, the film becomes tellurium-deficient and the majority carrier polarity shifts from p-type to n-type, accompanied by a carrier concentration increase above 1×1019 cm−3. Deposition is conducted on alumina or polyimide substrates at 200–300 °C and 1–10 Torr, using a plasma-enhanced CVD configuration to achieve usable growth rates of 0.2–1.0 nm·s⁻¹ while keeping the substrate below the decomposition threshold of the tellurium source. Gas purity follows SEMI C3; substrate cleaning and film handling take place in ISO 14644-1:2015 class 5 conditions. Terminal products are thermoelectric generator and Peltier cooler elements with p-type and n-type regions patterned from the same deposition sequence by locally adjusting the Te/Bi ratio. Published data for production-scale H₂Te-based Bi₂Te₃ CVD is limited; the above ranges are derived from low-pressure reactor studies and require in-line ellipsometry for run-to-run verification.
When hydrogen telluride is used as the tellurium precursor for germanium-antimony-tellurium phase-change memory films, the temperature window is constrained at both ends by metal-organic precursor condensation and gas-phase H₂Te decomposition. The target GST-225 composition has a Ge:Sb:Te atomic ratio of 2:2:5; inlet tellurium is oversized relative to the sum of germanium and antimony, with a Te/(Ge+Sb) molar feed ratio of 1.2:1 to 1.5:1 because the tellurium precursor decomposition rate is lower than that of the germanium and antimony precursors at the substrate. Deposition is performed in a plasma-enhanced atomic layer deposition or low-pressure CVD chamber at 120–220 °C and 0.5–5 Torr, with the upper temperature bound set by H₂Te decomposition into hydrogen and elemental tellurium. The lower bound is set by incomplete removal of antimony precursor ligands. Gas purification is specified under SEMI C3, cleanroom wafer handling under ISO 14644-1:2015 class 5, and memory chip qualification under JEDEC JESD47. Terminal products are nonvolatile phase-change memory cells and embedded memory elements in which the tellurium-containing chalcogenide is switched between amorphous and crystalline states by controlled current pulses. The batch-to-batch variable most frequently observed is tellurium composition drift as the H₂Te cylinder pressure drops; this is mitigated by mass-flow calibration against an in-line Fourier-transform infrared analyser.
| Scenario | Precursor system | Molar feed ratio | Temperature window | Pressure | Terminal product |
|---|---|---|---|---|---|
| CdTe photovoltaic absorber | H₂Te + dimethylcadmium | Te/Cd 1.5:1–2.5:1 | 320–400 °C | 50–150 Torr | CdTe thin-film PV modules |
| HgCdTe infrared detector | H₂Te + mercury + dimethylcadmium | Hg/Cd 80:1–150:1; Te/Cd 1.0:1–1.5:1 | 350–410 °C | 50–200 Torr | Mid-wave and long-wave infrared focal-plane arrays |
| III-V n-type doping | H₂Te diluted in H₂ | Te/III 1×10−7–5×10−5 | 550–700 °C | 20–100 Torr | GaAs/InGaP HBT, HEMT, and laser diode epiwafers |
| Bi₂Te₃ thermoelectric film | H₂Te + triethylbismuth | Te/Bi 1.6:1–2.0:1 | 200–300 °C | 1–10 Torr | Peltier cooler and thermoelectric generator elements |
| GST phase-change memory | H₂Te + Ge/Sb precursors | Te/(Ge+Sb) 1.2:1–1.5:1 | 120–220 °C | 0.5–5 Torr | Nonvolatile phase-change memory cells |
| CZT radiation detector epitaxy | H₂Te + dimethylcadmium + diethylzinc | Te/(Cd+Zn) 1.5:1–2.5:1; Zn/(Cd+Zn) 0.04:1–0.10:1 | 350–450 °C | 50–150 Torr | X-ray and gamma-ray spectrometer crystals |
Cadmium zinc telluride detector-grade epitaxy uses dimethylcadmium, diethylzinc, and H₂Te in a low-pressure MOCVD reactor to grow high-resistivity CZT films for direct X-ray and gamma-ray detection. The zinc fraction is held at 4–10 at% to increase bandgap and reduce leakage current without degrading charge-carrier mobility below acceptable values. The tellurium-to-group-II molar feed ratio is set from 1.5:1 to 2.5:1, and the zinc-to-group-II molar fraction is 0.04:1 to 0.10:1. Substrate temperature is 350–450 °C, reactor pressure 50–150 Torr, and growth rate 1–3 µm h⁻¹ on semi-insulating GaAs or CdTe wafers. Hydrogen telluride is preferred over diethyltellurium to avoid carbon-related deep levels that degrade spectroscopic resolution. Gas purity is governed by SEMI C3, wafer processing occurs in an ISO 14644-1:2015 class 5 cleanroom, and detector characterisation follows IEC 60759 for semiconductor X-ray energy dispersive spectrometers. Terminal products are CZT epitaxial layers for X-ray and gamma-ray spectrometers used in medical imaging, industrial radiography, and nuclear safeguards instrumentation. Published data for production-scale H₂Te-based CZT epitaxy is limited; therefore the process window above is derived from laboratory-scale MOCVD studies and requires qualification on the specific reactor geometry before transfer to multi-wafer platforms.
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Hydrogen telluride (H2Te, CAS 7783-09-7) is supplied in electronic/EL grade as a high-purity liquefied gas for vapor-phase tellurium delivery. The molecule has a molar mass of 129.62 g mol−1, a normal boiling point of −2.2 °C, and a melting point of approximately −49 °C. Its gas-phase standard enthalpy of formation is approximately +99.6 kJ mol−1, so the compound is thermodynamically unstable toward dissociation into hydrogen and tellurium. Electronic/EL grade designations are supplier-specific and commonly appear as 5N or 6N descriptors corresponding to bulk assays of 99.999% and 99.9995% by mole, respectively. The product is intended for processes in which a carbon-free tellurium source is required, including mercury cadmium telluride epitaxy, cadmium telluride film formation, and chalcogenide thin-film deposition. The material is not a drop-in replacement for hydrogen sulfide or hydrogen selenide; its lower thermal stability and higher molecular weight alter acceptable storage temperature, mass-flow calibration, and reactor residence time. Because electronic/EL grade H2Te is often produced in limited quantities, cylinder size, valve outlet, and analytical certificate format are specified at the time of order. The EL designation is also relevant to electroluminescent device processes, where trace oxygen and moisture can alter emission-layer stoichiometry or carrier lifetime.
There is no SEMI standard or ISO specification specific to H2Te, so electronic/EL grade is a negotiated product definition rather than a fixed grade under a published gas standard. The analytical package typically combines gas chromatography with a pulsed discharge ionization detector, Fourier transform infrared spectroscopy, cavity ring-down spectroscopy for moisture, and laser particle counting. Limits are established after cylinder passivation because the internal surface contributes oxygen and moisture to the gas phase. Table 1 lists representative purchase-specification values for a 5N-to-6N electronic/EL grade product. These values are commonly requested, but each parameter must be verified against the supplier certificate of analysis. Published specification data for this specific product are limited relative to silane, ammonia, and hydrogen chloride electronic grades.
| Parameter | Representative electronic/EL grade limit | Analytical method |
|---|---|---|
| Bulk assay | ≥ 99.999% (5N) to ≥ 99.9995% (6N) | GC-PDID / FTIR mass balance |
| Oxygen | ≤ 1 ppmv | GC-PDID or electrochemical sensor |
| Moisture | ≤ 1 ppmv | CRDS or quartz crystal microbalance |
| Total hydrocarbons as methane | ≤ 0.5 ppmv | GC-FID |
| Carbon monoxide | ≤ 0.5 ppmv | GC-PDID |
| Carbon dioxide | ≤ 0.5 ppmv | FTIR |
| Total metallic impurities | ≤ 100 ppbw | ICP-MS after impinger |
| Particles at ≥ 0.1 µm | ≤ 5 particles ft−3 | Laser particle counter |
The specification should also include a maximum permissible hydrogen accumulation or pressure-gain test at a defined low-temperature storage condition. Because H2Te decomposes to hydrogen and tellurium, total cylinder pressure may increase without a corresponding change in liquid composition. Users should require calibration gases traceable under ISO 17034 and analytical data from an ISO/IEC 17025 accredited laboratory.
Delivery infrastructure for H2Te is constrained by the compound’s low boiling point and decomposition tendency. The product is packaged in small stainless-steel or internally passivated cylinders, and the cylinder connection is commonly a high-integrity valve rather than a standard lecture-bottle outlet. No universal CGA assignment should be assumed; the outlet must be confirmed with the supplier and matched to the gas panel pigtail. Cylinder storage is specified at low temperature because decomposition accelerates as temperature rises. Supplier safety documentation commonly requires long-term cylinder storage in the range of −20 °C to 4 °C, with short-duration movement permitted only for small cylinders and only after review of the pressure history. The gas cabinet should maintain negative pressure, and the exhaust should be treated by a dry scrubber or wet scrubber rated for hydride gases. Gas panels should use 316L electropolished stainless steel wetted surfaces with roughness no greater than 10 μin Ra. Diaphragm valves and metal-face seals are preferred; elastomeric seals should be avoided unless validated for H2Te service. Delivery line heating above ambient should be avoided because forced decomposition can deposit elemental tellurium downstream. Deposition of tellurium in mass flow controllers, pressure transducers, or viewports is a known operational failure mode on research and pilot-scale lines. Mass flow controllers should be calibrated with a surrogate gas only after the manufacturer confirms a gas correction factor; direct calibration with H2Te is difficult because of decomposition and toxic-gas handling constraints.
The purge manifold should use a two-stage pressure reduction scheme with a tied-diaphragm stainless steel regulator. A high-purity argon or helium purge with vacuum evacuation is used before and after cylinder change. The panel should be leak-tested with helium to a sensitivity of 1×10−9 std cm³ s−1 or better for semiconductor gas service, although practical acceptance criteria are site-specific. Flow rates are typically in the low standard cubic centimeter per minute range for research and pilot-scale deposition, but the mass flow controller must maintain stable control at low setpoints without pressure overshoot.
In chemical vapor deposition and atomic layer deposition, H2Te is introduced at low partial pressure through a mass flow controller. The principal process advantage is the absence of carbon–tellurium bonds. Metalorganic tellurium precursors such as diethyl telluride can introduce hydrocarbon fragments into the film or require higher substrate temperatures to crack the C–Te bond. H2Te can supply tellurium without this carbon burden, but the usable process window is constrained by gas-phase decomposition. The reactor should be configured for low residence time, and the precursor injection line should be kept short. Cold-wall reactor components are preferred; heated lines and heated injectors should be excluded from the design unless the temperature is actively controlled below the decomposition threshold. Exhaust monitoring should use electrochemical or gas-detection hardware capable of low-ppb response and should be interlocked with the gas cabinet.
Published process data for electronic/EL grade H2Te in high-volume manufacturing are limited. Most commercial CdTe and HgCdTe deposition routes use metalorganic precursors or elemental tellurium effusion cells because H2Te instability raises transport, inventory, and abatement cost. Where H2Te is used, reactor exhaust should be oxidized to water and tellurium dioxide, and scrubber residue should be managed as hazardous waste. The process engineer should also evaluate chamber wall deposition: tellurium films can form on chamber internals, requiring more frequent mechanical cleaning than with metalorganic tellurium sources under identical throughput. In ALD systems, the pulsing valve must be resistant to particle generation from tellurium dust, and the precursor manifold should be designed for rapid evacuation to minimize hold-time decomposition.
H2Te is treated as a highly toxic gas with the additional hazard of hydrogen generation. There is no widely accepted occupational exposure limit; the user must rely on supplier safety data sheets and national exposure legislation. Toxic gas detection points should be placed at the cylinder connection, purge panel, process line, and exhaust duct. Gas cabinet face velocity is to be measured according to the applicable mechanical code and should be verified after each cylinder change. Cylinder change is permitted only after inert purge, leak testing, and confirmation that the toxic gas monitor reading is below the alarm threshold. H2Te is incompatible with oxidizers, halogens, and air; contact can convert it to water and tellurium or tellurium oxides. The gas should not be mixed with silane, diborane, or other hydrides in a common exhaust stream unless the abatement system is specifically designed for mixed hydrides. Spent scrubbing media and cylinders are hazardous waste streams and must be handled accordingly. Emergency response equipment should include a portable gas detector capable of hydride-family response, self-contained breathing apparatus, and an engineering plan for cylinder isolation.
Gas cabinet and abatement equipment are typically specified to comply with SEMI S2 and SEMI S6 provisions; facility-level cylinder quantity limits are generally controlled by local fire code and NFPA 55. The abatement system should have a dedicated tellurium-specific analytical check, because total hydride monitoring may not distinguish H2Te from H2Se or H2S. Scrubber media change intervals should be shortened if the downstream line shows tellurium dust or if hydrogen concentration increases above the value recorded during commissioning.
The standard enthalpies of formation of H2S, H2Se, and H2Te are approximately −20.6 kJ mol−1, +29.7 kJ mol−1, and +99.6 kJ mol−1, respectively. The shift from an exothermic to a strongly endothermic formation enthalpy makes H2Te susceptible to slow decomposition even at ambient temperature. Table 2 summarizes selected properties relevant to precursor selection. Process suitability is not determined solely by boiling point; decomposition behavior and carbon architecture dominate film purity and equipment design.
| Precursor | Normal boiling point | Standard enthalpy of formation | Carbon architecture | Practical stability note |
|---|---|---|---|---|
| Hydrogen sulfide | −60 °C | −20.6 kJ mol−1 | Carbon-free | Stable under ambient storage |
| Hydrogen selenide | −41 °C | +29.7 kJ mol−1 | Carbon-free | Controlled storage required |
| Hydrogen telluride | −2.2 °C | +99.6 kJ mol−1 | Carbon-free | Refrigerated storage and low-temperature delivery |
| Diethyl telluride | 137–138 °C | Not comparable to hydride | Contains C–Te bonds | More stable transport; carbon contamination risk |
| Elemental tellurium effusion cell | 988 °C | 0 kJ mol−1 as standard state | Carbon-free | High-temperature effusion cell required |
The practical difference in an H2Te process is the narrow thermal operating envelope. In H2S or H2Se systems, gas delivery can often be maintained at ambient or modestly elevated temperature, but H2Te lines must be kept cold and short. Filters, valve materials, and mass flow controller surfaces should be validated for catalytic decomposition; published metal-compatibility data for H2Te are limited, so qualification work is required before line lock. Film quality from H2Te is strongly influenced by gas-phase impurities and decomposition particles. Oxygen at 1 ppmv can oxidize the growing telluride surface or generate TeO2 suboxide. Moisture can hydrolyze the precursor and alter film stoichiometry. Therefore the cylinder change and purge sequence is as critical as the precursor purity itself. The process line should be passivated with a non-reactive gas after exposure to atmosphere, and the first process run after cylinder change should be qualified with a witness sample because surface-adsorbed species can shift the initial deposition rate.
Incoming quality assurance for electronic/EL grade H2Te includes cylinder-by-cylinder certification and a review of the pressure history. The certificate of analysis should be issued by an ISO/IEC 17025 accredited laboratory and should list the analytical methods, detection limits, and calibration gas traceability. Because the product can decompose during storage, a batch that passes initial certification may fail a later low-temperature stability check if the cylinder is held beyond the supplier-defined shelf life. Procurement contracts should define a maximum time between certification and installation, a maximum hydrogen level, and a maximum allowable pressure rise at the specified storage temperature. Cylinder models and product codes are supplier-specific; the specification should include cylinder capacity, fill density, valve outlet, and any required restrictor. Routine installation should include a helium or argon pressure-decay leak test of the pigtail and mass flow controller block before process gas introduction. After installation, the gas detection system should be placed in alarm mode and logged for a defined hold period before the process can start.