| HS Code | 198169 |
| Chemical Name | Hydrofluorocarbons (Electronic/EL Grade) |
| Chemical Formula | Various (e.g., CHF3, CH2F2, C2HF5, C3H8) |
| Grade | Electronic/EL Grade |
| Purity | >= 99.999% |
| Moisture Content | <= 1 ppm |
| Oxygen Content | <= 1 ppm |
| Total Impurities | <= 5 ppm |
| Boiling Point | Varies by specific compound (e.g., -82°C to -26°C) |
| Vapor Pressure | High (specific value depends on compound) |
| Applications | Semiconductor etching, CVD chamber cleaning, electronics manufacturing |
| Container Specifications | High-pressure cylinders with electropolished internal surfaces |
| Storage Conditions | Cool, dry, well-ventilated area; avoid moisture and contamination |
As an accredited Hydrofluorocarbons Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Hydrofluorocarbons Electronic/EL Grade packaged in 10 kg high-purity stainless steel cylinders with secure valves, ensuring contamination-free handling and delivery. |
| Container Loading (20′ FCL) | Loading electronic-grade hydrofluorocarbons in 20' FCL, secured cylinders per hazmat regulations, ensuring safe transport of high-purity gas. |
| Shipping | Shipped as a liquefied compressed gas, Hydrofluorocarbons Electronic/EL Grade is classified under UN3163, Class 2.2 (nonflammable gas). It must be transported in clean, moisture-free cylinders, secured upright, and protected from heat or physical damage to maintain electronic-grade purity and safe handling. |
| Storage | Store Hydrofluorocarbons Electronic/EL Grade in clean, certified cylinders or approved bulk containers with leak-tight connections. Keep in a cool, dry, well-ventilated area away from ignition sources, oxidizers, and direct sunlight. Maintain temperatures below 52°C. Use compatible materials, ground containers, protect from physical damage, and prevent contamination to preserve ultra-high purity. |
| Shelf Life | Shelf life is typically 24 months from manufacture when stored sealed, dry, and at controlled temperatures to maintain purity. |
In 300 mm dual-frequency capacitively coupled plasma etch chambers equipped with silicon electrostatic chucks and helium backside cooling at 8–15 Torr, electronic-grade CHF3 is metered through mass flow controllers at 12–35 vol% of total gas feed, with O2 at 3–8 vol%, argon as balance, and optional CF4 at 10–20 vol%. The chamber is held at 15–45 mTorr, with source excitation at 13.56 MHz and bias excitation at 2 MHz, while wafer temperature is maintained between 20 °C and 60 °C. The dual-frequency discharge sustains ion-enhanced chemical etching of SiO2 contact/via holes by depositing a fluorocarbon sidewall polymer and removing that polymer from horizontal dielectric surfaces under ion bombardment. Endpoint detection tracks the 483.5 nm CO emission line, and the overetch step raises O2 to 8–15 vol% to clear residual polymer without producing excessive silicon recess. Gas delivery and cleanroom handling comply with ISO 14644-1:2015 Class 3 and require moisture ≤ 1 ppmv, oxygen ≤ 1 ppmv, and total hydrocarbons ≤ 1 ppmv, measured by gas chromatography with pulsed discharge helium ionization detection. Terminal product types include FinFET logic integrated circuits, GAAFET contact structures, and DRAM capacitor contact/via arrays. A production failure mode associated with this step is mass flow controller drift; when CHF3 partial pressure deviates by more than 0.5% of full scale, sidewall angle shifts of 0.5–1.2° have been observed across lots, requiring inert gas flow audits before lot start.
The selectivity window for silicon nitride removal over silicon dioxide in 3D NAND staircase and spacer applications is controlled less by total fluorine flux than by the C/F ratio and hydrogen availability generated from CH2F2 and CH3F. In inductively coupled plasma etch tools operating at 5–20 mTorr, CH2F2 is fed at 5–18 vol%, CH3F at 0–10 vol%, O2 at 2–8 vol%, and argon as balance; source power at 13.56 MHz is set from 500 W to 1500 W, bias power from 50 W to 300 W, and wafer temperature from 40 °C to 70 °C. Hydrogen supplied by HFC dissociation stabilizes SiO2 surfaces through Si–H termination while silicon nitride is removed through SiF4 and NH3 formation, yielding selectivity values commonly between 5:1 and 20:1 depending on O2 flow and bias. The exhaust stream must be monitored for airborne molecular contamination because NH3 byproducts can interfere with downstream sensors; compliance with ISO 14644-8:2022 is therefore required at the subfab gas interface. Gas purity limits for CH2F2 include moisture ≤ 1 ppmv, oxygen ≤ 1 ppmv, and total hydrocarbons ≤ 1 ppmv. Terminal product types include 3D NAND flash memory strings, DRAM gate spacer structures, and FinFET gate spacers. An operational boundary is the flammability of CH2F2; oxygen-enriched mixtures above 8 vol% O2 are avoided because the flammable envelope expands with increasing process temperature and gas residence time.
For SiOCH interlayer dielectrics with k ≤ 2.5, CHF3/CH2F2 mixtures are used to suppress oxygen radical attack and prevent pore structure collapse during line and trench etching. A typical formulation ratio is CHF3 at 8–25 vol%, CH2F2 at 5–15 vol%, helium or argon as inert balance, chamber pressure 10–30 mTorr, wafer temperature 30–50 °C, and source/bias power split adjusted to maintain DC bias between 200 V and 800 V in a 300 mm CCP etcher. The hydrogen-rich fluorocarbon plasma deposits a thin fluoropolymer barrier on sidewalls, protecting porous SiOCH from moisture uptake and methyl-group depletion; post-etch H2/He plasma passivation at 200–500 W is applied before barrier deposition. Compliance for this application requires ISO 14644-1:2015 Class 4 cleanroom transfer, metal impurity ≤ 5 ppbw by inductively coupled plasma mass spectrometry, and particle counts ≤ 10 cm−3 at ≥0.1 μm in the gas distribution loop. Terminal product types include multicore SoCs, AI accelerator dies, and high-bandwidth memory logic interface chips. The process boundary is narrow: wafer temperature above 50 °C accelerates fluoropolymer dissociation and causes sidewall bowing in k ≤ 2.3 materials, while CHF3 below 8 vol% increases oxygen radical penetration and raises plasma-induced damage measured by mercuric probe flatband voltage shift.
GaN-on-SiC HEMT fabrication lines use CHF3-rich passivation via etch because the hydrogen-assisted chemistry limits GaN surface roughening compared with SF6- or CF4-dominant recipes. The process gas ratio is CHF3 30–50 vol%, argon 40–60 vol%, O2 3–8 vol%, chamber pressure 20–60 mTorr, ICP power 300–700 W, and bias power 50–150 W in 150 mm and 200 mm inductively coupled plasma etchers. The low-bias condition preserves AlGaN barrier conductivity, while endpoint detection at the 777.4 nm oxygen emission line terminates the etch once the Si3N4 passivation clears over source and drain contact regions. Compliance follows ISO 14644-2:2015 monitoring plans for gas purity and cleanroom particle control, with oxygen and moisture each limited to ≤ 1 ppmv. Terminal product types include RF power amplifiers, GaN HEMTs for 5G infrastructure, and SiC MOSFETs using nitride passivation layers. Published data for this specific configuration in GaN-on-SiC lines is limited outside device manufacturer qualification reports; the quoted window is therefore narrow rather than exhaustive.
Pad opening in bump and redistribution layer flows uses CH2F2-rich chemistry because the high hydrogen content produces HF-like surface reaction products and reduces fluorine radical attack on exposed copper compared with CF4-dominant mixtures. The formulated gas ratio is CH2F2 10–30 vol%, O2 3–10 vol%, argon balance, and optional CF4 at 0–5 vol%; chamber pressure is held at 20–50 mTorr, wafer temperature at 10–40 °C, and RF bias power is limited to 50–200 W to keep silicon recess below 10 nm. Endpoint detection monitors copper emission at 324.7 nm to terminate the etch once passivation nitride clears over post-CMP copper pads. The process environment complies with ISO 14644-1:2015 Class 5 for packaging-line cleanliness, and gas distribution must exclude acetylene and oxygen mixtures beyond the stated range to avoid copper oxide formation. Terminal product types include fan-out wafer-level packages, wafer-level chip-scale packages, 2.5D interposers, and 3D stacked packages. An operational incompatibility exists with process regimes above 50 mTorr because the CH2F2 polymer film becomes non-volatile and redeposits on copper, increasing via resistance by 5–15% if not removed by subsequent wet clean.
For thin-film transistor gate insulator open steps on Gen 8.5 large-area plasma etchers, CHF3 is used as the fluorocarbon source at 15–35 vol%, CH2F2 at 5–15 vol%, O2 at 3–10 vol%, and argon balance. Chamber pressure is maintained at 20–60 mTorr, substrate temperature at 25–60 °C, and source power at 10–20 kW depending on substrate area; the primary uniformity constraint is the gas injection manifold, because a generator-to-generator mass flow imbalance above 5% creates visible mura after gate insulator patterning. The process etches SiNx/SiOx gate insulator layers while preserving underlying indium gallium zinc oxide or amorphous silicon channel films. Facility compliance follows ISO 14644-1:2015 Class 5 cleanroom operation, with gas purity requiring particles ≤ 10 particles/L at ≥0.1 μm and moisture ≤ 1 ppmv in the distribution loop. Terminal product types include OLED backplane substrates, TFT-LCD panels, and AMOLED smartphone displays. The operational limit is sidewall taper: below 15 vol% CHF3 the polymer growth is insufficient to maintain a taper angle between 45° and 60°, while above 35 vol% the organic residue on the substrate requires extended wet stripping before post-etch inspection.
| Application scenario | Primary HFC feed ratio | Oxygen/additive window | Chamber pressure | Wafer/substrate temperature | RF conditions |
|---|---|---|---|---|---|
| SiO2 contact/via etch | CHF3 12–35 vol% | O2 3–8 vol%; optional CF4 10–20 vol% | 15–45 mTorr | 20–60 °C | source 13.56 MHz; bias 2 MHz |
| Silicon nitride staircase/spacer etch | CH2F2 5–18 vol%; CH3F 0–10 vol% | O2 2–8 vol% | 5–20 mTorr | 40–70 °C | source 13.56 MHz 500–1500 W; bias 50–300 W |
| Low-k SiOCH line/trench etch | CHF3 8–25 vol%; CH2F2 5–15 vol% | O2 0–5 vol%; He/Ar balance | 10–30 mTorr | 30–50 °C | DC bias 200–800 V |
| GaN/SiC passivation via etch | CHF3 30–50 vol% | O2 3–8 vol%; Ar 40–60 vol% | 20–60 mTorr | 25–50 °C | ICP 300–700 W; bias 50–150 W |
| Passivation nitride pad etch | CH2F2 10–30 vol% | O2 3–10 vol%; optional CF4 0–5 vol% | 20–50 mTorr | 10–40 °C | bias 50–200 W |
| Gen 8.5 TFT gate insulator etch | CHF3 15–35 vol%; CH2F2 5–15 vol% | O2 3–10 vol% | 20–60 mTorr | 25–60 °C | source 10–20 kW |
| Scenario | Compliance standard | Purity or contamination limit | Analytical method |
|---|---|---|---|
| SiO2 contact/via etch | ISO 14644-1:2015 Class 3 | moisture ≤ 1 ppmv; oxygen ≤ 1 ppmv; THC ≤ 1 ppmv | GC-PDHID |
| Silicon nitride staircase/spacer etch | ISO 14644-8:2022 | moisture ≤ 1 ppmv; oxygen ≤ 1 ppmv; THC ≤ 1 ppmv | extractive FTIR |
| Low-k SiOCH line/trench etch | ISO 14644-1:2015 Class 4 | metal impurity ≤ 5 ppbw; particles ≤ 10 cm−3 at ≥0.1 μm | ICP-MS; optical particle counter |
| GaN/SiC passivation via etch | ISO 14644-2:2015 | oxygen ≤ 1 ppmv; moisture ≤ 1 ppmv | GC-PDHID |
| Passivation nitride pad etch | ISO 14644-1:2015 Class 5 | silicon recess ≤ 10 nm; copper oxidation control | OES endpoint |
| Gen 8.5 TFT gate insulator etch | ISO 14644-1:2015 Class 5 | particles ≤ 10 particles/L at ≥0.1 μm; moisture ≤ 1 ppmv | optical particle counter |
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| Grade | CAS Registry No. | Boiling point | Purity | Water | Acidity as HF | Non-volatile residue | Particles ≥0.5 µm |
|---|---|---|---|---|---|---|---|
| HFC-23-EL | 75-46-7 | −82.1 °C | ≥99.999 % | ≤5 µmol/mol | ≤0.1 µmol/mol | not specified | not specified |
| HFC-32-EL | 75-10-5 | −51.7 °C | ≥99.999 % | ≤5 µmol/mol | ≤0.1 µmol/mol | not specified | not specified |
| HFC-134a-EL | 811-97-2 | −26.3 °C | ≥99.99 % | ≤10 mg/kg | ≤0.1 ppm | ≤1 ppm | ≤10 mL⁻¹ |
| HFC-245fa-EL | 460-73-1 | 15.3 °C | ≥99.99 % | ≤10 mg/kg | ≤0.1 ppm | ≤1 ppm | ≤10 mL⁻¹ |
| HFC-365mfc-EL | 406-58-6 | 40.2 °C | ≥99.99 % | ≤10 mg/kg | ≤0.1 ppm | ≤1 ppm | ≤5 mL⁻¹ |
| HFC-43-10mee-EL | 138495-42-8 | 55 °C | ≥99.99 % | ≤10 mg/kg | ≤0.1 ppm | ≤1 ppm | ≤5 mL⁻¹ |
| Control | Method or reference | Typical output |
|---|---|---|
| Gas chromatography purity | ASTM D6806 | ≥99.99 % or ≥99.999 % by grade |
| Water in liquid HFC | ASTM E1064 | ≤10 mg/kg |
| Non-volatile residue | ASTM D1353 | ≤1 ppm |
| Acidity as HF | ASTM D2989 | ≤0.1 ppm |
| Chloride | ASTM D2108 | ≤0.5 ppm |
| Vapor pressure | ASTM D2879 | compound-specific |
| Density | ASTM D4052 | compound-specific |
| Flammability limits | ASTM E681 | compound-specific |
| Dielectric breakdown | IEC 60156 | application-specific |
| Ozone-depletion potential | Montreal Protocol Annexes | 0 |
| HFC phasedown obligation | Kigali Amendment to Montreal Protocol | applicable |
