| HS Code | 797151 |
| Chemical Name | Formic Acid |
| Synonym | Methanoic acid |
| Chemical Formula | HCOOH |
| Cas Number | 64-18-6 |
| Molecular Weight | 46.03 g/mol |
| Grade | Electronic/EL Grade |
| Assay Purity | ≥99.5% (w/w) |
| Appearance | Clear, colorless liquid |
| Odor | Pungent, acrid |
| Melting Point | 8.4 °C |
| Boiling Point | 100.8 °C |
| Density | 1.220 g/cm³ at 20 °C |
| Refractive Index | 1.3714 at 20 °C |
| Flash Point | 45 °C (closed cup) |
| Pka | 3.75 |
| Viscosity | 1.61 mPa·s at 20 °C |
| Solubility In Water | Miscible |
| Solubility In Organic Solvents | Miscible with ethanol, acetone, ether and ethyl acetate |
As an accredited Formic Acid Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Formic Acid Electronic/EL Grade is supplied in 1L, 4L HDPE bottles and 20L drums, maintaining ultra-high purity. |
| Container Loading (20′ FCL) | 20′ FCL: Electronic/EL Grade Formic Acid loaded in sealed drums/IBCs, safely secured, labeled, and documented for transport. |
| Shipping | Formic Acid Electronic/EL Grade ships as a hazardous corrosive material (UN1779, Class 8). It requires certified drums or IBCs, proper hazard labeling, and segregation from bases and oxidizers. Transportation must comply with applicable dangerous goods regulations. Use dedicated, well-ventilated equipment, and ensure spill containment during handling and transit. |
| Storage | Store Formic Acid Electronic/EL Grade in tightly sealed, original containers made of compatible materials such as HDPE or PTFE. Keep in a cool, dry, well-ventilated area away from direct sunlight, heat, and incompatible substances like strong oxidizers and bases. Maintain temperature stability to preserve high purity, and segregate to prevent contamination or corrosion. |
| Shelf Life | Shelf life is typically 12 months when stored sealed, cool, and protected from light and moisture. |
In 300 mm copper/low-k interconnect fabrication, post-chemical-mechanical-polishing (CMP) cleaning removes benzotriazole (BTA) passivation films, colloidal silica or ceria abrasives, and copper oxides from patterned wafers without raising the k-value of porous SiCOH dielectrics. Electronic/EL grade formic acid with assay ≥99.5% and SEMI Grade 4/5 cation control at ≤10 ppb per critical element is blended at 0.6–1.5 wt% in ultrapure water with 0.05–0.2 wt% citric or oxalic acid chelant and 0.01–0.03 wt% nonionic surfactant. The bath pH at 25°C is held at 2.4–3.1. Single-wafer cleaning equipment with megasonic transducers operating at 950 kHz–1.1 MHz dispenses the solution for 30–60 s at 22–25°C, followed by ultrapure water rinsing and isopropyl alcohol vapor drying. The cleaning solution is recirculated through a 0.05 µm polytetrafluoroethylene membrane to control particle counts. Trace-metal compliance is verified by inductively coupled plasma mass spectrometry per ASTM D5673-16; cleanroom particle limits follow ISO 14644-1:2015 Class 3. A process boundary at pH <2.2 is established because static copper etch rate increases above 0.1 nm/min and low-k damage becomes detectable; pH >3.5 leaves residual BTA islands. Oxidizing agents such as hydrogen peroxide are not combined with formic acid in the same cleaning bath because performic acid formation shifts redox potential. Terminal product types include 28 nm and 14 nm logic wafers, DRAM, and 3D NAND with copper/low-k back-end-of-line stacks.
Vapour-phase fluxing replaces liquid flux in wafer bumping and chip attach by reducing tin oxides under nitrogen atmosphere. Electronic/EL grade formic acid is vaporized in a temperature-controlled bubbler maintained at 18–26°C; nitrogen carrier gas at 2–10 slm passes through the liquid and delivers a process chamber concentration of 1.5–3.5 vol%. Oxygen concentration is maintained below 100 ppm to prevent reoxidation. Peak reflow temperature for Sn-3.0Ag-0.5Cu or Sn-3.5Ag solder-capped bumps is set at 235–255°C with time above liquidus 35–70 s. Formic acid reduces surface oxides to metallic tin, water, and carbon dioxide; residual carboxylate species are removed by a post-reflow nitrogen purge at 150–180°C for 20–40 s. Chamber surfaces are held above the dew point of the formic acid-water mixture to suppress condensate dripping. Compliance is monitored by ionic contamination testing per IPC-TM-650 Method 2.3.25 and surface insulation resistance per IPC-TM-650 Method 2.6.3.7. Exceeding 4.5 vol% formic acid produces copper formate residues on Cu pillar sidewalls; below 1.2 vol%, oxide reduction becomes incomplete and bump collapse fails. Terminal products include Cu pillar solder-capped wafers, flip-chip chip-scale packages, 2.5D interposers, and high-bandwidth memory stacks.
Copper and copper-alloy leadframes accumulate cuprous and cupric oxide films during storage, die attach cure, and plasma cleaning. Immersion or spray treatment with Electronic/EL grade formic acid at 3.0–5.5 vol% in deionized water at 38–48°C for 45–120 s removes oxide without roughening silver-plated wirebond pads. A corrosion inhibitor such as benzotriazole at 0.5–1.0 wt% is added to the final rinse or incorporated into the cleaning bath to passivate copper surfaces after oxide removal. Process equipment uses polypropylene tanks with 40 kHz ultrasonic agitation, cascade overflow rinse at 18 MΩ·cm, and filtered nitrogen air-knife drying. Wirebond pull strength after cleaning is verified per MIL-STD-883J Method 2011; assembly cleanliness criteria follow IPC-A-610H Class 2. Concentrations above 8 vol% produce undercutting at the silver plating edge, particularly on alloy 194 and alloy 7025 leadframes; below 2.5 vol% the cuprous oxide removal rate falls below 1.5 nm/min and throughput is insufficient for high-volume lines. Bath life is typically 8–12 h before copper loading exceeds 150 ppm and requires replacement. Terminal products include QFN, SOIC, BGA, and power module leadframes with gold, silver, or bare copper wirebond pads.
Cerium oxide polishing slurries leave a mixed contamination layer of CeO2 particles, organic pad debris, and surface metal ions on thin-film transistor liquid crystal display and OLED backplane glass. Electronic/EL grade formic acid at 0.8–1.8 wt% in ultrapure water with 0.03–0.08 wt% anionic surfactant, pH 2.6–3.3, temperature 28–35°C, is dispensed through inline brush cleaning systems with 12–18 roll brush stages. The formic acid chelates cerium residues and shifts zeta potential to reduce redeposition on alkali-free aluminosilicate glass. Final rinsing uses 18 MΩ·cm ultrapure water followed by high-efficiency air-knife drying. Compliance with particle cleanliness is assessed per IEST-STD-CC1246E Level 85 and cleanroom environment per ISO 14644-1:2015 Class 5. At pH <2.1, measurable etching of alkali-free glass occurs at 0.1–0.3 nm/min; at pH >3.5, cerium removal efficiency falls below 90% and particle counts after drying increase. The solution is incompatible with unprotected aluminum frame components, which corrode within 4–6 h of continuous contact. Terminal products include Gen 8.5/10.5 TFT-LCD glass substrates and low-temperature polysilicon OLED backplanes used in high-resolution displays.
| Application | HCOOH Concentration | Temperature/Time | Critical Boundary |
|---|---|---|---|
| Post-CMP copper/low-k cleaning | 0.6–1.5 wt% | 22–25°C, 30–60 s | pH <2.2 increases copper etch |
| Flux-assisted reflow | 1.5–3.5 vol% | 235–255°C, 35–70 s above liquidus | >4.5 vol% forms copper formate residues |
| Leadframe oxide stripping | 3.0–5.5 vol% | 38–48°C, 45–120 s | >8 vol% undercuts silver plating |
| Polished glass substrate cleaning | 0.8–1.8 wt% | 28–35°C, inline brush stages | pH <2.1 etches alkali-free glass |
| RDL copper oxide removal | 1.0–2.5 wt% | 25–40°C, 30–90 s | pH <2.3 attacks copper RDL |
Redistribution layer copper oxidation after semi-additive processing creates a non-uniform CuO/Cu2O film that reduces adhesion of polyimide passivation in fan-out wafer-level packaging. Electronic/EL grade formic acid is formulated at 1.0–2.5 wt% with 0.1–0.3 wt% citric acid in ultrapure water; pH is adjusted to 2.5–3.0 with ammonium hydroxide, and bath temperature is maintained at 25–40°C. Spray development-track equipment dispenses the solution for 30–90 s through fan nozzles at 0.15–0.35 MPa pressure, followed by deionized water spin-rinse at 800–1,500 rpm and nitrogen dry. The oxide removal step is positioned after copper RDL plating and photoresist strip, before polyimide coating and cure. Adhesion between the copper RDL and polyimide is tested per ASTM D3359-23 tape peel method; trace metallic contamination is checked by ICP-MS per ASTM D5673-16. Published industrial data for formic acid above 2.5 wt% in RDL oxide removal is limited; process qualification on electrolytic and electroless copper RDL stacks is required. At pH <2.3, copper RDL attack exceeds 0.2 nm/min and causes line-width loss in 5–10 µm line/space designs; at pH >3.1, removal of CuO/Cu2O is incomplete and polyimide adhesion fails at the tape peel boundary. Ammonia-based stripper residues must be rinsed before formic acid exposure to avoid ammonium formate salt formation. Terminal products include fan-out wafer-level packages, panel-level packages, and chip-first/chip-last RDL structures.
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Formic Acid Electronic/EL Grade is a high-purity methanoic acid liquid supplied for semiconductor packaging, advanced printed circuit assembly, and precision plating baths where alkali-ion contamination, halide transport, and submicron particles generate electrical leakage, corrosion, or voiding defects. The material is identified by CAS 64-18-6 and has the molecular formula HCOOH with a molecular weight of 46.03 g/mol. Commercial model designations are supplier-specific and usually encode acid concentration and grade, such as Formic Acid 98 % EL or FOA-EL-98. Density of concentrated product at 20 °C is approximately 1.22 g/cm³; boiling point at 101.3 kPa is near 100.8 °C. The product may be offered at 98.0 % to 99.0 % assay with water as the principal balance, although anhydrous formulations with water below 0.1 % are also distributed. The grade designation EL is not a universal standard; it is a commercial purity category that must be read against the lot-specific Certificate of Analysis.
Anion and trace-metal control is the defining feature. Representative supplier limits control chloride at ≤ 1 mg/kg, sulfate at ≤ 2 mg/kg, nitrate at ≤ 2 mg/kg, and phosphate at ≤ 1 mg/kg. Sodium and potassium are typically limited to ≤ 0.5 mg/kg and ≤ 0.2 mg/kg because mobile alkali ions can shift threshold voltages in metal-oxide-semiconductor structures. Iron is often controlled at ≤ 0.3 mg/kg; aluminum, calcium, copper, zinc, and nickel are individually held between 0.05 mg/kg and 0.2 mg/kg. Non-volatile residue after evaporation is commonly specified below 20 mg/kg. For particle control, optical particle counting at ≥ 0.2 µm is applied, with typical upper limits around 100 particles/mL. Anion determinations are performed by ion chromatography following ISO 10304-1 or ASTM D4327; trace metals are measured by inductively coupled plasma mass spectrometry according to ISO 17294-2; water is determined by Karl Fischer titration using ISO 760 or ASTM E203.
The dominant process constraint is the thermal lability of formic acid. During vapor-phase oxide reduction, concentrated formic acid is metered into a vaporizer, mixed with nitrogen, and heated to process temperatures between 150 °C and 250 °C. Under these conditions, formic acid undergoes competing decomposition pathways: decarbonylation to carbon monoxide and water, and decarboxylation to carbon dioxide and hydrogen, the latter being promoted by transition-metal surfaces. This decomposition is process-useful in soldering because the liberated hydrogen-bearing species reduce tin and copper oxides, but it also means any volatile acid impurity in the feed can be carried into the process environment. Chloride in particular can form hydrochloric acid in the hot zone and attack copper traces, silver-plated terminals, or stainless steel chambers. Consequently, the chloride ceiling of EL grade is set well below technical-grade material to minimize gas-phase acid generation.
Trace-metal ceilings are constrained by the same transport logic. A single vaporization cycle can concentrate nonvolatile metals in the vaporizer sump; if the vaporizer is not drained, iron, nickel, and chromium from upstream corrosion can accumulate and eventually contaminate the vapor path through droplet entrainment. EL grade therefore imposes iron and transition-metal limits that are not required in cleaning or agricultural grades. In plating applications, the acid is introduced directly into the bath; any calcium or magnesium present can precipitate as sulfate or fluoride salts and increase bath turbidity, while sodium and potassium can co-deposit at high current density. The strict alkali-ion specification reduces this risk.
At 20 °C, dynamic viscosity of concentrated formic acid is approximately 1.8 mPa·s, lower than many mineral acids, which permits precise metering through fluoropolymer diaphragm pumps or pressure-transfer systems. Vapor pressure at 20 °C is approximately 4.7 kPa, indicating that vaporization can be achieved with moderate heat input but also that containers must be vented safely.
Operational boundaries should be explicit. Formic acid reacts violently with strong oxidizers including nitric acid, hydrogen peroxide, and chromium trioxide; combination with sulfuric acid can cause rapid decomposition and carbon monoxide release. Contact with carbon steel and cast iron produces iron formate and hydrogen, so storage vessels and transfer lines are constructed from 316L stainless steel, high-density polyethylene, or fluoropolymers, with 316L reserved only for passivated, short-residence-time applications. Prolonged storage above 30 °C or repeated opening of containers without nitrogen blanketing increases water uptake and reduces acid assay. For cleanroom use, drums are typically supplied with a nitrogen overlay and dispensed through filtered connections to avoid particle ingress.
In advanced solder interconnects for power semiconductor modules and flip-chip packages, formic acid vapor is used as a fluxless oxide-reduction agent. The process replaces liquid flux in void-sensitive joints because it leaves minimal nonvolatile organic residue. In a typical vacuum or nitrogen reflow chamber, formic acid is injected at 2–5 vol% balanced with nitrogen while the substrate reaches peak reflow temperature. For Sn-Ag-Cu alloys, peak reflow temperatures of 235 °C to 250 °C are common. The oxide-reduction sequence proceeds through adsorbed formate intermediates on the metal surface; tin oxide and copper oxide are reduced to elemental tin and copper, while formic acid decomposes to volatile byproducts. Process effectiveness depends on acid concentration, oxygen partial pressure in the chamber, and the surface temperature of the die pad and lead frame. Chambers used in production are often electropolished stainless steel, and the gas exhaust is routed through a thermal oxidizer or wet scrubber because carbon monoxide is a decomposition product.
High-purity EL grade is favored here because technical-grade formic acid contains sulfate and chloride that can redeposit on solder masks or underfill interfaces. In modules with exposed copper lead frames, chloride concentrations as low as 1 mg/kg in the liquid feed can produce surface discoloration after repeated thermal cycles. The absence of sodium and potassium further reduces ion migration risk under high-temperature reverse-bias testing. Users typically verify solder joint voiding by X-ray inspection; a reduction in void area requires both chamber gas management and consistent acid feed quality.
Plating bath pH adjustment for copper pillar or redistribution-layer deposition has traditionally used sulfuric acid, but sulfate carryover can alter plating organic additives. Formic Acid Electronic/EL Grade is introduced as a pH modifier to reduce sulfate loading in certain low-sulfate copper methanesulfonate baths. The acid must meet the same metallic impurity requirements as the plating bath: iron above 0.3 mg/kg can cause rough deposit morphology, and chloride above the bath specification can influence suppression characteristics of organic additives. When formic acid is used in acid copper baths, compatibility with organic brighteners and suppressors should be tested by Hull cell evaluation before line conversion. The concentration added is typically calculated from bath pH titration data; additions of 0.5 mL/L to 2.0 mL/L of concentrated acid are often required to shift pH by a few tenths in small-volume pilot baths, but production-scale dosing must be determined empirically.
Formate ions can complex with certain transition metals and may alter the adsorption equilibrium of nitrogen-containing levelers. Published data for this specific configuration is limited, so compatibility testing is required before substituting formic acid into an existing copper bath.
The difference between Electronic/EL Grade and lower-purity formic acid is most visible in chloride, sulfate, and trace-metal ceilings. Technical-grade formic acid, often available at 85 % or 90 %, is manufactured for leather tanning, descaling, and silage preservation; its impurity limits are broad and typically not controlled by lot-specific electronic standards. Reagent-grade formic acid may have higher assay but still lacks submicron particle and alkali-ion control. The table below compiles representative specification envelopes for three grade categories; values are drawn from supplier documentation and should not be interpreted as a universal product standard.
| Parameter | Electronic/EL Grade | Reagent Grade | Technical Grade |
|---|---|---|---|
| Assay (HCOOH) | ≥ 98.0 % | ≥ 96.0 % | 85–90 % |
| Chloride (Cl) | ≤ 1 mg/kg | ≤ 10 mg/kg | ≤ 50 mg/kg |
| Sulfate (SO₄) | ≤ 2 mg/kg | ≤ 20 mg/kg | ≤ 30 mg/kg |
| Iron (Fe) | ≤ 0.3 mg/kg | ≤ 5 mg/kg | ≤ 20 mg/kg |
| Sodium + potassium combined | ≤ 1 mg/kg | not routinely specified | not specified |
| Particles ≥ 0.2 µm | ≤ 100 particles/mL | not specified | not specified |
EL-grade packaging also differs from technical-grade supply chains. The product is filled in cleanroom environments into fluoropolymer-lined drums or high-density polyethylene containers that have been rinsed with high-purity deionized water and dried with filtered nitrogen. Technical grade is commonly shipped in unlined steel or polyethylene drums; reagent grade may be packaged in glass but without particle-classification data. For electronic manufacturing, the packaging and transfer system are part of the purity envelope because contamination can be introduced after chemical synthesis.
Batch-to-batch variance in Electronic/EL Grade is monitored through Certificate of Analysis documents that list lot number, assay, water, anion, trace metals, and particles. Production-scale lines often require incoming inspection using Fourier-transform infrared spectroscopy for identity and ion chromatography for chloride and sulfate before the material is released into cleanroom distribution. If a lot is repackaged outside a controlled environment, the Certification of Analysis should be supplemented with on-site particulate monitoring.
In semiconductor front-end cleaning, formic acid is occasionally used in dilute mixtures for copper oxide dissolution or as a component of organic acid cleaning chemistries. Because formic acid is a weak acid with pKa 3.75 at 25 °C, its pH response is less aggressive than hydrochloric or hydrofluoric acid, but it can etch copper oxides through complexation and reduction. In this application, the EL grade prevents re-deposition of iron, chromium, and nickel on wafer surfaces, which is critical for devices below 10 nm design rules. The absence of chloride in the formulation reduces pitting corrosion on aluminum bond pads when the chemistry is used in post-etch residue removal.