| HS Code | 168414 |
| Chemical Formula | (C2H5)2Zn |
| Molecular Weight | 123.49 g/mol |
| Cas Number | 557-20-0 |
| Ec Number | 209-161-3 |
| Product Grade | Electronic/EL Grade |
| Appearance | Colorless, clear liquid |
| Purity | ≥99.9999% (6N) metals basis |
| Density | 1.205 g/cm³ at 25°C |
| Melting Point | -28°C |
| Boiling Point | 117°C |
| Refractive Index | 1.498 at 20°C |
| Solubility | Soluble in saturated hydrocarbons and ethers; reacts/decomposes with water, alcohols, and acids |
| Reactivity With Air | Pyrophoric; ignites spontaneously in air |
| Zinc Content | ~52.94% |
As an accredited Diethylzinc (DEZ) Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Diethylzinc (DEZ) Electronic/EL Grade is supplied in 100 g stainless steel bubblers under inert atmosphere, ensuring high purity and safe handling. |
| Container Loading (20′ FCL) | Diethylzinc (DEZ) Electronic/EL Grade is packed in nitrogen-padded sealed containers, loaded upright and secured inside a 20′ FCL for safe, inert transport. |
| Shipping | Diethylzinc (DEZ) is shipped as a pyrophoric dangerous good (UN1366, Class 4.2) in passivated stainless-steel cylinders under dry nitrogen/argon. Containers feature leak-tight valves and inert purges. Transport is restricted to ground/ocean with proper hazard labeling; air freight is highly regulated. Strict moisture exclusion ensures stability and preserves Electronic/EL-grade purity. |
| Storage | Diethylzinc (DEZ) Electronic/EL Grade must be stored under an inert atmosphere, typically in sealed stainless-steel or compatible cylinders/bubblers, to prevent air or moisture contact. Keep in a cool, dry, well-ventilated area away from oxidizers, water sources, and ignition hazards. Use approved flammable-liquid storage, grounded equipment, and rigorous leak checks. |
| Shelf Life | Shelf life is typically 12 months from manufacture date when stored unopened under inert gas, away from moisture and air. |
Before any film property is measured, the supply path for diethylzinc is treated as a reactive impurity manifold rather than an inert stainless-steel delivery system. In thin-film CIGS and silicon heterojunction process lines, DEZ vapor is delivered from stainless steel bubblers thermostated at 15 ± 1 °C; the vapor draw rate is calibrated through pressure-based mass flow controllers with an upstream pressure of 800–950 mbar absolute. Deposition occurs in cold-wall showerhead MOCVD reactors at substrate temperatures from 150 °C to 250 °C for amorphous silicon-compatible front contacts, where higher temperatures degrade underlying silicon passivation layers. Diethylzinc and water vapor are consumed in a surface hydrolysis reaction; the H₂O/DEZ molar feed ratio is held between 0.8 and 1.2 to suppress carbon incorporation while avoiding excessive gas-phase pre-reaction. Transparent conductive ZnO film is doped with aluminum or gallium by adding trimethylaluminum or trimethylgallium at a molar flow ratio of 0.005 to 0.04 relative to DEZ. The resulting ZnO:Al or ZnO:Ga film is deposited to a thickness of 500–1200 nm, with sheet resistance measured by four-point probe per ASTM F84 to a target of 8–15 Ω/sq. Optical transmittance exceeds 80% in the 400–1100 nm band when measured with an integrating sphere spectrophotometer per ISO 15368. On multi-wafer MOCVD lines, batch-to-batch sheet resistance shifts of ±1 Ω/sq are observed when bubbler headspace pressure drifts outside ±5 mbar of setpoint. Delivery lines must be dedicated to DEZ and purged with dry nitrogen; contact with alcohols, acids, or chlorinated cleaning solvents triggers zinc oxide or zinc chloride formation. The terminal product is a transparent conductive oxide electrode in rigid photovoltaic modules.
| Property | Typical acceptance band | Method |
|---|---|---|
| Trace metals after controlled hydrolysis | ≤ 0.1 µg/g per metal for Zn, Al, Ga, Fe, Ni, Cu | ASTM D5673 |
| Water content in bulk liquid | ≤ 5 µg/g | ASTM E203 |
| Particle count ≥ 0.5 µm | ≤ 100 particles/mL | ISO 21501-4:2018 |
| Cleanroom fill environment | ISO Class 4 | ISO 14644-1:2015 |
Flexible OLED encapsulation lines use DEZ/H₂O ALD at substrate temperatures below 100 °C because polyethylene naphthalate and polyimide carrier films begin to stretch or warp above this threshold. DEZ is introduced into a cross-flow ALD reactor with sequential pulse times of 0.1–0.5 s for DEZ and 0.015–0.1 s for H₂O, separated by argon purge of 5–10 s. Chamber pressure is maintained at 0.5–2.0 mbar. Typical growth per cycle for DEZ/H₂O at 90 °C is 0.18–0.22 nm on silicon coupons, as measured by spectroscopic ellipsometry. A ZnO/Al₂O₃ nanolaminate with 30–50 nm total thickness is applied over OLED stacks. Stand-alone ZnO layers are not used as a primary moisture barrier because zinc oxide undergoes hydrolysis in damp air and roughens; instead, 5–15 nm ZnO layers are sandwiched between 2–5 nm Al₂O₃ layers. The resulting multilayer barrier stack measured at 38 °C and 90% relative humidity per ASTM F1249-20 shows water vapor transmission rate below 5×10⁻⁴ g/m²/day for specific polyethylene naphthalate film configurations; published data for this specific stack is limited to laboratory-scale coupons. Process failure on production tools is most often caused by DEZ condenser deposition in exhaust lines, which forms pyrophoric deposits if reactor unloading is attempted without dry-nitrogen purge cycles. Ampoule connection procedures follow SEMI S2 equipment safety expectations for pyrophoric liquid delivery, and ampoule changeouts are conducted in ISO 14644-1:2015 Class 4 minienvironments with point-of-use oxygen sensors set to alarm at 1% of the exposure limit. In production ALD tools, temperature non-uniformity across a 300 mm glass carrier of ±5 °C produces thickness variation up to 3% across the panel, which shifts barrier performance. The terminal product is a flexible organic light-emitting diode display with thin-film encapsulation, where moisture leakage is the dominant lifetime failure mode.
Zinc oxide electron transport layers formed from DEZ are attractive in perovskite and organic photovoltaic stacks because precursor delivery does not require post-annealing above 150 °C, but this same advantage creates a narrow processing window when the film contacts organic absorber layers. For inverted perovskite cell architectures, DEZ/H₂O ALD is run at substrate temperatures between 100 °C and 120 °C; above 130 °C, the halogen-rich perovskite surface releases volatile methylammonium species, reducing open-circuit voltage. The DEZ dose is limited to 0.1–0.3 s at 0.3–0.7 mbar to avoid overexposure that increases interfacial OH-group density. Growth per cycle is typically 0.15–0.20 nm; the electron transport layer thickness is maintained at 15–25 nm to balance series resistance against optical transmission. Thicker films above 30 nm create a measurable shunt suppression problem due to unfavorable energy-level alignment with the perovskite conduction band minimum. Film composition and thickness are verified by X-ray photoelectron spectroscopy after argon cluster etch. The terminal device is a perovskite solar cell with inverted p-i-n or n-i-p architecture; the DEZ-derived ZnO layer replaces titanium dioxide so that the entire device can be processed below 150 °C on flexible polymer substrates. Exposure of the freshly deposited ZnO film to water vapor before perovskite deposition creates surface hydroxyls that degrade electron extraction; therefore, the ALD chamber must be pumped below 0.1 mbar before the next layer is transferred under inert gas.
Cross-sectional control of c-axis orientation in DEZ-sourced piezoelectric zinc oxide becomes the controlling variable when the film is integrated into 2.4 GHz and 5.2 GHz bulk acoustic wave resonators. Unlike low-temperature encapsulation, acoustic resonator processing demands higher substrate temperatures between 180 °C and 280 °C to maximize grain texture; this is supplied by resistive heating in multi-wafer vertical ALD or MOCVD reactors with 150–200 mm wafer capacity. Zinc oxide films of 800–1500 nm are grown at rates of 2–5 nm/min by MOCVD using DEZ and H₂O or DEZ and O₂; the higher growth rate relative to ALD reduces throughput bottlenecks but increases surface roughness from 1.2 nm to 3.5 nm RMS as measured by atomic force microscopy on 10 × 10 µm scan areas. Rocking curve full width at half maximum of the (002) reflection is used as the acceptance criterion; values below 3° are required for adequate electromechanical coupling coefficient k_eff² above 5%. In real deposition campaigns, thickness uniformity across a 200 mm wafer drifts by ±3% when precursor ampoule temperature control exceeds ±0.5 °C; this causes frequency offset and requires per-wafer frequency trimming after electrode patterning. Oxygen plasma pre-clean before acoustic ZnO deposition is avoided because it roughens the electrode surface and degrades c-axis texture. The terminal component is a film bulk acoustic resonator for radio-frequency front-end filters in mobile communication modules, where the zinc oxide layer is sandwiched between top and bottom metal electrodes and the etched cavity is formed by release of a sacrificial poly-Si layer.
Diethylzinc has been evaluated as a zinc source for metalorganic deposition of ZnS:Mn emissive layers in electroluminescent display stacks because it avoids the high sublimation temperatures required for zinc chloride or metallic zinc sources. The process combines DEZ vapor, hydrogen sulfide, and manganese cyclopentadienyl tricarbonyl in a low-pressure cold-wall reactor at substrate temperatures between 200 °C and 350 °C. Manganese concentration in the ZnS lattice is controlled by the molar feed ratio of Mn to DEZ; a ratio of 0.001 to 0.01 yields amber emission with a peak wavelength near 585 nm when measured by photoluminescence spectrometry. Too high Mn content above 1.5 atomic percent causes concentration quenching in thin-film electroluminescent devices, reducing luminance at 60 Hz alternating-current driving. Deposition rate is limited by the sulfur precursor decomposition path; hydrogen sulfide is introduced at twice the DEZ molar flow to avoid zinc-rich films, but excess H₂S increases reactor exhaust scrubber load and downstream sulfide corrosion. Sulfur precursor delivery lines require heated passivation to prevent sulfur condensation and acidic corrosion during idle. The terminal product is a thin-film electroluminescent phosphor incorporated into alternating-current thin-film electroluminescent displays for industrial and automotive instrumentation. Published data for this specific configuration is limited; most industrial ZnS:Mn deposition still uses e-beam evaporation, so DEZ-based routes are qualified only in pilot-scale runs.
Zinc oxide thin-film transistor channels derived from DEZ/H₂O ALD are processed on borosilicate glass and polyimide substrates at temperatures between 120 °C and 180 °C; the chosen temperature is a compromise between field-effect mobility and gate-insulator interface trap density. In bottom-gate TFT integration, a 20–40 nm ZnO channel is deposited over 100–200 nm SiO₂ or 30–50 nm Al₂O₃ gate insulator. The DEZ pulse time and water pulse time are set asymmetrically at 0.1 s and 0.02 s to achieve zinc-rich film growth without converting the top few monolayers into zinc hydroxide, which increases off-state leakage current. Wet etching of the ZnO channel in dilute hydrochloric acid or buffered oxide etchants is monitored by critical dimension scanning electron microscopy; lateral etch rates of 0.5–2.0 nm/s cause channel length loss on 5–20 µm design rules. In production-scale runs, the main yield loss is particulate fallout from precursor ampoule contamination and incomplete purging between DEZ and H₂O pulses. The terminal product is a transparent thin-film transistor with mobility in the 1–10 cm²/V·s range, used in transparent backplanes for augmented-reality microdisplays and active-matrix transparent logic. The TFT current-voltage characteristics are collected with a semiconductor parameter analyzer at 0.1 V drain voltage, and devices with wet-etch lateral loss above 1 µm are rejected because channel length reduction raises drain-induced barrier lowering.
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Diethylzinc (DEZ) Electronic/EL Grade, CAS 557-20-0, is an organometallic precursor with the formula Zn(C2H5)2 and a molecular weight of 123.5 g/mol. The product is specified for vapor-phase semiconductor processes, and the Electronic/EL Grade nomenclature is a supply-chain classification rather than a universal standard; each lot is released with a certificate of analysis covering trace metals, volatile hydrocarbons, and particle content. The material is supplied as a clear, colorless, pyrophoric liquid in electropolished 316L stainless steel canisters with 1.8 L or 2.0 L working volume, dip-tube outlet, and VCR metal-seal connections. The specified metal-basis purity is 6N, equivalent to minimum 99.9999% zinc by weight after correction for non-metallic impurities. Primary uses are atomic layer deposition (ALD), chemical vapor deposition (CVD), and metal-organic CVD of zinc oxide, doped zinc oxide, zinc sulfide, and related chalcogenide films for complementary metal-oxide-semiconductor processing, thin-film transistor arrays, transparent conductive oxide stacks, and photovoltaic buffer layers. The product is not suitable for direct liquid injection; it is delivered by bubbling purified argon or nitrogen through a temperature-controlled canister.
Table 1 lists typical specification intervals for DEZ Electronic/EL Grade as published in supplier technical bulletins. The values are upper control limits or target intervals unless otherwise indicated; they are not a substitute for lot-specific acceptance criteria. The vapor pressure of diethylzinc is 1.6 kPa at 20 °C. This property supports bubbler delivery at moderate canister temperatures, but it also requires heated downstream lines held at 50–70 °C to prevent condensation. The packaging configuration is an integral part of the specification because pyrophoric and water-reactive behavior excludes open handling.
| Property | Typical specification or value | Reference method or equipment |
|---|---|---|
| Appearance | Clear, colorless liquid | Visual inspection |
| Zn-based purity | ≥ 99.9999% (6N) | ICP-MS after controlled digestion |
| Total trace metal impurities | ≤ 1.0 ppm by weight | Inductively coupled plasma mass spectrometry |
| Al, Fe, Cu, Ni, Cr, Sn, Pb | ≤ 0.1 ppm each | ICP-MS |
| Volatile hydrocarbon content | ≤ 0.01% as n-hexane equivalents | GC-FID |
| Density at 25 °C | 1.198 g/mL | Oscillating U-tube densitometer |
| Vapor pressure at 20 °C | 1.6 kPa (16 hPa) | Static vapor pressure cell |
| Boiling point | 117 °C | Literature value |
| Particle count | ≤ 5 particles/mL at ≥ 0.5 µm | Laser-obscuration particle counter |
| Package leak integrity | ≤ 1 × 10−9 Pa·m3/s helium | Helium leak test |
Release testing for the Electronic/EL Grade typically includes ICP-MS for the elements listed above and GC-FID for volatile hydrocarbon byproducts. The Al detection limit is commonly set at 0.01 ppm because aluminium is an unintentional n-type dopant in ZnO-based transparent conductive oxides. In ALD of ZnO:Al, an Al feed concentration above 0.05 ppm can alter carrier concentration and contact resistance; electronic-grade contracts therefore often specify a lower Al maximum rather than relying on total trace metal compliance. This is a property cliff-edge: once Al exceeds the process-specific threshold, film conductivity and thickness uniformity may remain within specification while transistor threshold voltage or buffer layer band alignment shifts.
Electropolished internal surfaces with roughness Ra <0.25 µm are specified for the canister because zinc oxide particulate adhesion is greater on machined stainless steel than on electropolished surfaces. The outlet is protected by a 0.5 µm sintered metal filter, and the pressure drop across this filter is included in the mass-flow controller sizing. A positive-pressure nitrogen blanket of 20–50 kPa prevents backflow of moisture during valve actuation. Heating above 60 °C is rarely used because volatile hydrocarbon impurities become more mobile and the risk of condensation in unheated downstream fittings increases.
Atomic layer deposition of zinc oxide from DEZ and water proceeds through alternating saturated surface reactions. On showerhead-type reactors for 200 mm or 300 mm substrates, the precursor is delivered by bubbling purified argon through the canister at 40–60 °C, while downstream vapor lines are maintained at 50–70 °C. Growth per cycle for thermal ZnO is 0.10–0.20 nm at substrate temperatures of 150–250 °C when measured by spectroscopic ellipsometry on thermal silicon oxide. Technical-grade DEZ may contain variable fractions of zinc alkoxide or zinc hydroxide from partial hydrolysis; these impurities have lower volatility than diethylzinc and shift the effective precursor partial pressure from lot to lot. The resulting thickness variability on high-aspect-ratio patterned structures has been attributed to precursor partial pressure drift and requires mass-flow controller recalibration. Electronic/EL Grade material reduces this drift through stricter oxygenated impurity limits and a controlled vapor pressure specification.
In plasma-enhanced ALD using O2 or N2O plasma, ZnO growth per cycle is also 0.10–0.20 nm at 150 °C, but the plasma route allows deposition on temperature-sensitive polymer substrates below 100 °C; in this regime, residual hydrocarbons from lower-purity DEZ can produce carbon contamination above 5 atomic % measured by X-ray photoelectron spectroscopy. The low hydrocarbon ceiling of the Electronic/EL Grade is therefore operationally relevant for flexible barrier layers and thin-film transistor channels. For high-aspect-ratio structures such as deep trench capacitors or through-silicon vias, the precursor must saturate surfaces with 10:1 or higher depth-to-width ratio. In such processes, inadequate precursor dose or a drop in DEZ partial pressure produces sidewall film thinning; spectroscopic ellipsometry on blanket witness wafers does not capture this deviation. Cross-sectional transmission electron microscopy is used to verify conformality, and process engineers often require ≥ 95% step coverage at 10:1 aspect ratio for DEZ/H2O processes. The Electronic/EL Grade’s vapor pressure consistency reduces the frequency of dose recalibration on 300 mm high-volume lines.
Metal-organic chemical vapor deposition of ZnO and related films uses DEZ when high deposition rate and large-area uniformity are required. In a cold-wall MOCVD reactor for chlorine-free transparent conductive oxide on glass, DEZ and an oxidant are delivered at substrate temperatures of 300–500 °C. The pyrophoric liquid requires inert purge after each deposition pulse and dry abatement of the exhaust. Electronic/EL Grade material is filled in an ISO Class 5 cleanroom and the canister vapor space is blanketed with purified nitrogen. This reduces particle shedding from source-container valves into the mass-flow controller. In production fabs, particle adder excursions on monitor wafers have been traced to elastomeric valve seats in precursor canister outlets; all-metal VCR connections and metal-seat valves are therefore standard for DEZ Electronic/EL Grade manifolds.
The electrical properties of ZnO films from DEZ/H2O are n-type. On 200 mm thermal oxide substrates, as-deposited films at 200 °C typically show resistivity of 0.1–10 Ω·cm measured by four-point probe; post-deposition annealing at 400 °C in nitrogen can reduce resistivity to below 0.01 Ω·cm when aluminium doping is added. These values are process-specific and should not be read as guaranteed material properties. The Electronic/EL Grade’s controlled aluminium upper limit is important because the difference between undoped and doped ZnO is less than 0.1 atomic % for some transparent conductive oxide formulations.
Storage and handling of DEZ Electronic/EL Grade are governed by pyrophoric and water-reactive hazards. Containers must be kept under inert gas at a positive pressure of 20–50 kPa, and canister change-out must occur in a dry nitrogen-purged enclosure with oxygen below 0.1% by volume. The product is incompatible with water, alcohols, amines, halogenated hydrocarbons, and any protic solvent; contact with water releases ethane and generates sufficient heat to ignite the liquid. Spill response uses dry sand or sodium carbonate powder, never water or carbon dioxide extinguishers. Direct liquid injection is impractical because the compound decomposes violently on contact with moisture; the canister must not be inverted unless an internal dip-tube configuration is confirmed. Trace oxygen ingress above 5 ppm in the delivery gas accelerates formation of zinc oxide particulates that block 0.5 µm filter elements and mass-flow controller orifices. These limitations confine DEZ Electronic/EL Grade to closed delivery systems with oxygen and moisture monitors at the canister outlet.
Fire suppression for DEZ storage areas should use dry chemical or inert gas systems; water sprinklers must be isolated from the storage zone. The container must be stored in a ventilated fire-rated cabinet with temperature controlled below 25 °C. Repeated thermal cycling between 15 °C and 35 °C can produce non-condensable gases that distort vapor pressure readings. For this reason, canister warming should be limited to the delivery enclosure and not to hot plates or band heaters that create local hot spots. A dual-stage inert gas purge with oxygen and moisture analyzers at the canister outlet is the minimum configuration for safe operation.
Zinc acetate dihydrate is a non-pyrophoric zinc source for sol-gel and spray pyrolysis, but decomposition requires substrate temperatures above 300 °C and releases acetic acid, which etches zinc oxide and limits electrical mobility. Zinc chloride is used in some MOCVD processes, but residual chloride above 0.1 atomic % degrades transparent conductive oxide stability and corrodes exhaust lines. DEZ Electronic/EL Grade is selected when deposition must occur below 150 °C, when chloride must remain below the detection limit of secondary ion mass spectrometry, and when ALD growth per cycle must remain stable within ±0.01 nm across a 300 mm wafer. Compared with dimethylzinc, DEZ has similar pyrophoric hazards but lower vapor pressure; the ethyl ligand undergoes beta-hydride elimination to yield ethane and ethylene, whereas methyl ligands can leave carbon in the oxide film under low-oxidant conditions. The Electronic/EL Grade further differs from research-grade DEZ in packaging, trace metal documentation, and particle release control. Table 2 summarizes the distinction between Electronic/EL Grade and technical-grade DEZ where industrial release data are available.
| Attribute | DEZ Electronic/EL Grade | Technical-grade DEZ |
|---|---|---|
| Metal-basis purity | ≥ 99.9999% (6N) | Often specified as 99.0–99.9%; trace metal release may be absent |
| Trace metal certificate of analysis | Lot-specific ICP-MS report for Al, Fe, Cu, Ni, Cr, Sn, Pb | Not consistently provided or limited to total transition metals |
| Oxygenated impurity control | Low-volatility Zn alkoxide/hydroxide species controlled by GC/FTIR | Not separately controlled in many technical grades |
| Particle count | ≤ 5 particles/mL at ≥ 0.5 µm | Not specified |
| Packaging | Electropolished 316L stainless steel, VCR metal seal, ISO Class 5 fill | General stainless steel cylinder or lecture bottle, threaded connection, uncontrolled fill environment |
| Application | Semiconductor ALD/CVD, TCO, thin-film transistors, photovoltaics | Chemical synthesis, pilot R&D, pyrophoric reagent use |
For process engineers, the relevant difference is not headline purity but lot-to-lot invariance of impurity species that act as dopants, particle sources, or vapor pressure modifiers. In ZnO thin-film transistors processed on 300 mm glass substrates, a transient increase in silicon-containing impurity from stopper or valve wear shifts turn-on voltage; electronic-grade supply chains therefore require wetted components to be 316L stainless steel or perfluorinated parts, with no glass or elastomer packings. Published data for this specific configuration are limited, but the qualification practice is to compare particle adders and threshold-voltage drift after a 25-wafer deposition run. The absence of a universal SEMI specification for DEZ Electronic/EL Grade means that the purchaser must request the impurity detection-limit sheet and verify that the values fit the process control chart.
