| HS Code | 604622 |
| Productname | Copper CMP Polishing Slurry Electronic/EL Grade |
| Appearance | Homogeneous liquid dispersion, typically light blue or translucent |
| Ph | 4.0 - 5.0 |
| Particlesize | 30 - 70 nm |
| Solidscontent | 5% - 15% |
| Viscosity | 1.5 - 4.0 cP |
| Specificgravity | 1.05 - 1.15 |
| Copperremovalrate | 2000 - 8000 Å/min |
| Barrierselectivity | High selectivity to tantalum/tantalum nitride |
| Dishingvalue | ≤ 500 Å (typical patterned wafer) |
| Erosionvalue | ≤ 300 Å (typical patterned wafer) |
| Defectivity | Low surface defects and scratches |
| Shelflife | 6 - 12 months |
| Storagetemperature | 15 - 25 °C |
As an accredited Copper CMP Polishing Slurry Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in 1-gallon fluorinated HDPE bottle, nitrogen-sealed for Electronic/EL Grade Copper CMP slurry. |
| Container Loading (20′ FCL) | Ship Copper CMP polishing slurry (electronic/EL grade) in sealed containers loaded into a 20′ FCL, secured, contamination-free, properly labeled, and safely handled. |
| Shipping | Ship Copper CMP Polishing Slurry (Electronic/EL Grade) in sealed, corrosion-resistant containers, protected from freezing, contamination, and direct sunlight. Label per SDS; classify as non-hazardous or limited quantity if applicable. Use temperature-controlled freight, secure upright loads, and avoid contact with incompatible metals or oxidizers during transit. |
| Storage | Store Copper CMP Polishing Slurry in tightly sealed original containers in a clean, cool, well-ventilated area away from direct sunlight and incompatible chemicals. Maintain storage temperature above freezing and below recommended limits (typically 10–30°C) to prevent particle settling or separation. Keep containers upright and avoid contamination. If stored long-term, agitate or recirculate gently before use per manufacturer guidelines. |
| Shelf Life | Typically 6–12 months when stored sealed at recommended temperatures, away from light and freezing. Agitate well before use. |
Advanced logic and foundry fabs running damascene copper interconnects from 32 nm down to 7 nm use electronic/EL grade bulk copper slurries with tight particle-size and trace-metal distributions. A typical bulk copper slurry is formulated with colloidal silica at 1–5 wt%, hydrogen peroxide at 0.5–2.0 wt%, glycine at 0.5–1.5 wt%, benzotriazole at 0.01–0.05 wt%, and a carboxylate chelator at 0.1–0.3 wt%. The slurry is maintained at pH 5.5–6.5 and dispensed at 150–300 mL/min through point-of-use filtration with 0.5 µm nominal retention. On the polisher, platen speed is set at 65–85 rpm, carrier speed at 55–75 rpm, and downforce at 2.0–3.5 psi. Endpoint control uses eddy-current detection for copper clearing and optical endpoint for the subsequent barrier film. The bulk step typically removes electroplated copper at 6000–12000 Å/min while maintaining dielectric erosion below 50 Å/min on low-k films. After bulk clearing, a barrier slurry removes Ta/TaN/TiN with copper line loss held between 100 Å and 300 Å. This integrated sequence produces interconnects for system-on-chip processors, graphics processors, application-specific integrated circuits, and field-programmable gate arrays.
| Property | Metrology basis | Control window |
|---|---|---|
| Mean hydrodynamic diameter (D50) | ISO 22412:2017 | 35–70 nm |
| Particle size distribution limits | ISO 13320-1:2020 | D10 ≥20 nm, D90 ≤120 nm |
| Zeta potential at pH 5.5 | ISO 13099-2:2012 | -15 mV to -35 mV |
| Total trace metal impurities per element | ICP-MS per EPA Method 6020B | <50 ppb |
| Large particle count ≥0.5 µm | Liquid optical particle counter | <40 particles/mL |
| pH | NIST-traceable pH electrode | 5.5–6.5 for bulk Cu |
Through-silicon via integration in 2.5D and 3D packaging applies copper CMP slurries at higher abrasive loading because electroplated copper overburden over via arrays commonly reaches 5–15 µm. Typical via diameters are 5–20 µm with depths of 50–100 µm. The bulk slurry for this step uses silica or silica-alumina hybrids at 10–15 wt%, H2O2 at 2–5 wt%, glycine at 0.5–1.5 wt%, and benzotriazole at 0.02–0.10 wt%, with pH held between 4.0 and 5.5. Process settings are shifted toward higher shear: downforce 3.0–4.0 psi, platen speed 70 rpm, carrier speed 60 rpm, and slurry flow 250–350 mL/min. Copper removal rates of 1.5–3.0 µm/min are required to keep throughput acceptable, but high removal rate increases edge-fast polishing and dishing on large TSV features. Production data indicate that clearing time can shift by 15–20% across wafers with varying TSV pattern density, making eddy-current endpoint mandatory. After bulk copper removal, a low-abrasive barrier slurry clears the Ti/Cu seed and TiN adhesion layer while keeping dishing below 50 nm on 10 µm TSV openings. Copper-glycine precipitate on polyurethane pads is controlled with in-situ conditioning at 35–50 rpm and periodic line flush using dilute citric acid at 0.5–1.0 wt%. This slurry class supports high-bandwidth memory stacks, silicon interposers, and 2.5D/3D integrated processors.
A redistribution layer on polyimide or epoxy mold compound places different constraints on copper CMP because the underlying polymer is far softer than inorganic dielectrics. RDL line widths in fan-out wafer-level packaging typically range from 5/5 µm down to 2/2 µm, with electroplated copper thickness between 3 µm and 8 µm. The CMP slurry is formulated at pH 5.0–6.0 with colloidal silica content of only 1–3 wt%, D50 30–50 nm, H2O2 at 0.5–1.5 wt%, benzotriazole at 0.005–0.02 wt%, and citric acid buffer at 0.05–0.15 wt%. Oxidizer content is deliberately limited because excess H2O2 roughens polyimide and reduces adhesion to the subsequent mold compound. Downforce is maintained at 1.5–2.5 psi, platen and carrier speeds at 50–65 rpm, and flow at 150–220 mL/min on a soft pad with Shore D hardness of 45–55. Under these conditions copper removal rate is 3000–6000 Å/min while dielectric loss is held below 100 Å/min. The subsequent barrier slurry removes Ti/Cu seed at 800–1500 Å/min without attacking polymer. Post-CMP residue control is critical: benzotriazole residue above 10 ng/cm² by TOF-SIMS can cause skip plating in subsequent electroless Ni/Au under-bump metallization. Amine-based post-CMP cleaners are avoided because they dissolve Cu-organic complexes and widen dishing on narrow RDL features. The resulting wafers enter RF front-end modules, power management integrated circuits, and automotive radar transceivers.
Before solder cap attachment, electroplated copper pillars on 300 mm wafers exhibit within-die height variation sufficient to cause non-wet failures in flip-chip assembly. Copper pillars of 20–80 µm diameter and 30–50 µm height are planarized to reduce co-planarity variation from ±2–4 µm to ±0.5–1.0 µm. The slurry for this operation is adjusted to pH 5.5–6.0 with colloidal silica at 2–5 wt%, H2O2 at 1–2 wt%, and benzotriazole at 0.01–0.03 wt%. Removal proceeds at 1500–2500 Å/min under low downforce of 1.0–2.0 psi and platen speed of 50–70 rpm, clearing 2–5 µm of copper overburden without distorting pillar geometry. Because pillar arrays are often isolated, pattern density is managed with dummy fill to keep local density variation within ±5% and to prevent dishing on isolated pillars. Static etch rate must remain below 40 Å/min to preserve sidewall passivation and to avoid undercutting the pillar base. Residual copper oxide thickness after clean is monitored by ellipsometry and held below 20 Å to ensure reliable solder wetting. These planarized pillars enter flip-chip application processors, high-density die-to-die micro-bump assemblies, and fine-pitch graphics devices.
Hybrid bonding flow begins with copper/dielectric planarization that must produce copper pad recess of 2–5 nm below the surrounding silicon dioxide. This recess allows room-temperature dielectric bonding before thermal expansion of copper completes the metallic joint. Slurries for this step are ultralow in abrasive, typically colloidal silica at 1–2 wt% with D50 20–40 nm, pH 6.5–7.5, H2O2 at 0.5–1.0 wt%, and benzotriazole at 0.005–0.01 wt%. The process uses downforce of 0.5–1.5 psi, platen speed 40–60 rpm, carrier speed 35–50 rpm, and slurry flow 100–180 mL/min. A final buff step on a soft polyurethane pad conditions the surface to atomic-scale smoothness. Metrology on production lots uses atomic force microscopy over a 50 µm × 50 µm scan field, with roughness Rq below 0.5 nm and die-to-die recess range below 2 nm. Large particle count must be held below 10 particles/mL at a 0.2 µm detection threshold because a single pad-scratch event can destroy hybrid bonding yield. Post-CMP cleaning uses dilute citric acid at 0.5 wt% followed by deionized water; alkaline cleaners are excluded because they recess copper too aggressively and widen pad dishing. The narrow process window makes this the most defect-sensitive copper CMP application, and slurry shelf life at point of use is typically limited to 24 h due to colloidal stability boundaries near neutral pH. End products include CMOS image sensors, 3D NAND stacked dice, and AI accelerators with hybrid-bonded memory stacks.
For RF MEMS ohmic switches and micro-relays, copper structural layer planarization over sacrificial oxide requires a differentiated low-pressure CMP route because the released membranes and movable structures cannot tolerate high shear. Slurry pH is held at 5.0–6.0, colloidal silica at 1–2 wt%, H2O2 at 0.5–1.0 wt%, and benzotriazole at 0.01–0.02 wt%. Downforce is limited to 1.0–1.5 psi, platen speed to 40–60 rpm, and slurry flow to 100–150 mL/min. Published data for production-specific MEMS configurations is limited, so process development typically begins with blanket wafer studies to establish removal rate and surface roughness before device lots are introduced. The step defines copper structural thickness of 1–5 µm over oxide molds and must not generate pad debris that bridges the released switch gap. Processing is performed in ISO 14644-1:2015 Class 5 cleanroom conditions, with trace metal control below 50 ppb per element by EPA Method 6020B. This niche planarization route supplies RF MEMS ohmic contact micro-relays and tunable capacitors for millimeter-wave front-end modules.
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Copper CMP polishing slurry, electronic/EL grade, is a colloidal dispersion formulated for chemical-mechanical planarization of copper damascene interconnect structures on 200 mm and 300 mm wafer platforms. The material is supplied as an aqueous system containing a sub-100 nm abrasive fraction—commonly colloidal silica—together with hydrogen peroxide as the oxidizer, a carboxylic acid or amino acid complexing agent, and a triazole-based corrosion inhibitor. The designation “EL” refers to electronic-grade purity: critical trace metal ceilings are typically below 1 µg/L for Fe, Ni, Cr, Na, K, Ca, and Cu, and large-particle counts are controlled below 100 counts/mL at ≥0.5 µm when tested by single-particle optical sensing per ISO 21501-2:2019. Model identifiers for this class are vendor-specific and typically encode abrasive type, oxidizer content, and pH modifier; the EL suffix or grade code identifies electronic-grade purity rather than a standardized formulation. Published data for any single proprietary model is limited; removal rate and defectivity therefore require qualification on the target polishing tool using the vendor’s certificate of analysis and a defined incoming quality control protocol.
Typical certificates of analysis for this product class report pH 6.0–9.0, total solids 2–10 wt%, and mean particle diameter 35–95 nm by dynamic light scattering per ISO 22412:2017. Vendors may also report D50 from laser diffraction; however, laser diffraction is less sensitive to the fine tail and should be supplemented by dynamic light scattering. Zeta potential at native pH should exceed ±25 mV for silica-based systems, measured in 10 mM KCl background per ISO 13099-1:2012. Viscosity at 25 °C and 100 s⁻¹ is commonly 1–5 mPa·s per ISO 3219, and density is 1.00–1.15 g/cm³ per ASTM D4052. Hydrogen peroxide concentration is specified at 0.5–5.0 wt% by iodometric titration; conductivity is typically 0.5–10 mS/cm. These values are typical ranges and should not be substituted for a specific lot’s acceptance criteria.
| Property | Typical specification | Method |
|---|---|---|
| pH | 6.0–9.0 | ISO 10523:2008 |
| Mean particle diameter | 35–95 nm | ISO 22412:2017 |
| Total solids | 2–10 wt% | Gravimetric, 105 °C |
| Viscosity at 100 s⁻¹ | 1–5 mPa·s | ISO 3219 |
| Density | 1.00–1.15 g/cm³ | ASTM D4052 |
| Hydrogen peroxide | 0.5–5.0 wt% | Iodometric titration |
| Trace metals, critical elements | <1 µg/L | SEMI C43 ICP-MS |
| Large-particle count ≥0.5 µm | <100 counts/mL | ISO 21501-2:2019 |
The product is used in two CMP sequences: bulk copper removal and copper clearing before barrier CMP. On a 300 mm multi-head polisher, distribution is typically set at 100–300 mL/min with polishing pressure 0.8–2.5 psi and platen speed 40–90 rpm. In production-scale rotary tools fitted with an IC1000-type pad and in situ diamond conditioning, bulk copper removal rates typically range from 3000–7000 Å/min at 1.5 psi, but exact values are process- and pattern-dependent. Production-scale reports describe pad glazing when slurry solids exceed 8 wt% and conditioning downforce is below 4.5 kg; the removal rate can decay by more than 20% within 20 wafers. For clearing steps, the same chemistry is often diluted 1:1 to 1:3 with deionized water and paired with endpoint detection to limit copper dishing below 10 nm on 28 nm pitch test structures.
On a 300 mm polisher with a four-zone membrane carrier, within-wafer nonuniformity above 5% at 1.5 psi is often traced to slurry distribution, pad temperature drift, or uneven pad conditioning rather than slurry formulation alone. A slurry flow variation of ±20 mL/min can shift edge removal by 5–10% because abrasive replenishment at the wafer edge is transport-limited. Endpoint detection by eddy current or optical reflectometry must be tuned for copper clearing; prolonged over-polish can increase line recess by more than 10 nm on advanced damascene patterns. Static etch rate is typically held below 50 Å/min, and the removal-rate-to-static-etch ratio is expected to exceed 50:1 when the triazole inhibitor loading is correctly matched to the complexing agent concentration.
The removal mechanism couples chemical oxidation of Cu(0) to Cu+/Cu2+ by H₂O₂ with complexation of Cu2+ by glycine or citrate, followed by mechanical removal of the passivation film. The process window is narrow. At pH below 5.0, triazole inhibitor films lose adhesion and static etch increases; above pH 9.5, hydrogen peroxide decomposition accelerates, generating microbubbles that reduce pad contact and create removal nonuniformity. A set-point drift of ±0.2 pH can shift copper removal rate by ±15–25% depending on abrasive loading and complexing-agent concentration. Hydrogen peroxide concentration below 0.3 wt% in a 200 L day tank can reduce removal from 6000 Å/min to 2000 Å/min within 48 h when temperature reaches 30 °C. The decomposition follows first-order behavior with an apparent activation energy of 60–90 kJ/mol under metal-catalyzed alkaline conditions; storage at 20 °C rather than 30 °C may extend half-life from 24 h to >72 h. Point-of-use delivery systems must use PTFE or fluoropolymer wetted components; 316L stainless steel upstream of the polishing tool is avoided because leached Fe2+/Fe3+ catalytically decomposes peroxide and violates trace metal ceilings. Inline colorimetric or electrochemical peroxide monitoring is calibrated against daily iodometric titration because refractive index and density meters cannot resolve ±0.1 wt% changes with sufficient confidence.
High ionic strength from complexing agents and oxidizing species compresses the electrical double layer. For colloidal silica, the isoelectric point occurs near pH 2–3; stable formulations operate at pH 6.0–9.0, where the negative surface charge yields zeta potential magnitudes above 25 mV. A drift toward the isoelectric point or addition of cationic species can reduce zeta potential below 20 mV and trigger agglomeration. Alumina-containing copper slurries, in contrast, exhibit an isoelectric point near pH 8–9, so low-pH operation is required for positive surface charge. Multi-angle dynamic light scattering per ISO 22412:2017 should track both the Z-average and polydispersity index; a PDI increase above 0.20 is an early indicator of bimodal aggregation. During manufacture, a high-shear rotor-stator dispersion step at 3000–6000 rpm is typical; shear above 12000 rpm can produce collision-induced aggregation in concentrated silica slurries. Viscosity remains below 5 mPa·s at 100 s⁻¹ when dispersion is stable; shear-thickening is not expected for sub-100 nm silica under these dilute to semi-dilute conditions. Batch-to-batch variation in D50 wider than ±5 nm may alter Prestonian removal behavior because contact area and abrasive number density change nonlinearly.
Electronic/EL grade slurries are screened for oversized particles because a single ≥0.5 µm aggregate can create a scratch of 5–10 nm depth on post-CMP copper and may not be eliminated by subsequent barrier polish. Acceptance criteria commonly require <100 counts/mL at ≥0.5 µm and <20 counts/mL at ≥1.0 µm using single-particle optical sensing per ISO 21501-2:2019. Trace metal limits for critical mobile ions are typically <1 µg/L for Fe, Ni, Cr, and Cu, <0.5 µg/L for Na, K, Ca, and Mg, and <0.1 µg/L for noble-metal or radioactive species. Analysis is performed by quadrupole ICP-MS per SEMI C43 and ISO 17294-2:2016 after closed-vessel acid digestion. Packaging is filled in ISO Class 5 or better environments per ISO 14644-1:2015, and container leachability is tested so that cation release remains below 0.5 ng/cm²/day. In wafer fabs, point-of-use filtration at 0.5 µm is standard to protect the polishing tool from dried slurry flakes and agglomerated particles.
Electronic/EL grade is not interchangeable with barrier or bulk slurries. Barrier slurries typically show copper removal below 500 Å/min, while electronic/EL grade removes copper at 3000–7000 Å/min; substitution on a copper bulk step would extend polish time by more than 300% and may leave copper residues. Conversely, using an aggressive copper slurry on a barrier step can recess copper and damage low-κ dielectrics. The following table summarizes typical differences based on vendor datasheets and process qualification reports.
| Attribute | Electronic/EL grade Cu CMP | Conventional Cu CMP | Barrier or other slurry |
|---|---|---|---|
| Abrasive | Colloidal silica, 35–95 nm | Colloidal or fumed silica, 50–150 nm | Silica or ceria, 40–200 nm |
| Hydrogen peroxide | 0.5–5.0 wt% | 0.5–5.0 wt% | Typically <0.1 wt% |
| Cu removal rate | 3000–7000 Å/min | 2000–5000 Å/min | <500 Å/min |
| Trace metal limit | <1 µg/L critical elements | <10 µg/L critical elements | Varies |
| Large-particle count ≥0.5 µm | <100 counts/mL | <500 counts/mL | Varies |
| Corrosion inhibitor | Triazole, low static etch | Triazole, moderate static etch | Low or absent |
| Primary application | Cu bulk and clearing at advanced nodes | Cu bulk at mature nodes | Barrier clearing or dielectric |
Storage is specified at 5–25 °C in vented containers because hydrogen peroxide decomposition releases oxygen and can pressurize sealed packaging. The slurry must not be frozen; freeze-thaw cycles can destabilize colloidal silica and generate agglomerates. Mixing with amines, quaternary ammonium hydroxide, or cationic polymeric flocculants is incompatible because these species can reverse particle surface charge and cause rapid sedimentation. The product must not be combined with concentrated nitric acid, piranha solution, or strong oxidizing baths due to exothermic decomposition and oxygen release. Point-of-use blending of hydrogen peroxide should maintain concentration within ±0.1 wt% of the target for the polishing step, and batch premixes older than 48 h should be analyzed before use because pH and peroxide concentration drift with copper dissolution. Recirculation loops should maintain wall shear below 10000 s⁻¹; higher shear can fragment or aggregate abrasive particles. Incoming quality control should include pH, DLS particle size, LPC, peroxide titration, and ICP-MS trace metal screens before line release.
