| HS Code | 707502 |
| Product Name | CMP Oxidant Electronic/EL Grade |
| Chemical Type | High-purity oxidizing agent for chemical mechanical planarization |
| Purity | 99.999% (metals basis) |
| Concentration | 30% or 50% w/w as specified |
| Appearance | Clear colorless liquid |
| Odor | Slight pungent odor |
| Ph | 2.0 - 4.0 (typical) |
| Specific Gravity | 1.10 - 1.15 at 20°C |
| Solubility | Fully miscible in water |
| Total Metals Impurities | ≤ 5 ppb |
| Particle Count | ≤ 100 particles/mL (>0.2 μm) |
As an accredited CMP Oxidant Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | CMP Oxidant Electronic/EL Grade is packaged in clean 4-gallon (15 L) fluorinated HDPE containers with secure, leakproof closures. |
| Container Loading (20′ FCL) | 20′ FCL: palletized, sealed containers of CMP Oxidant Electronic/EL Grade, secured with dunnage, labeled, isolated from flammables, and protected from moisture. |
| Shipping | CMP Oxidant Electronic/EL Grade ships as a hazardous oxidizer in dedicated, corrosion-resistant containers, with strict temperature control and segregation from combustibles. Transport follows UN regulations, using labeled, leak-proof packaging. Proper documentation, trained handlers, and controlled ambient conditions ensure safe, contamination-free delivery. |
| Storage | Store in a clean, cool, dry, well-ventilated area away from direct sunlight, heat, and incompatible materials (organics, reducing agents, acids, bases, metals). Keep the original container tightly sealed and upright to maintain high purity and prevent contamination. Use dedicated, corrosion-resistant secondary containment and follow strict electronic-grade handling procedures. |
| Shelf Life | Shelf life is typically six months from manufacture date if stored sealed, cool, and protected from light and contamination. |
In copper damascene planarization, the electronic/EL-grade CMP oxidant is metered point-of-use into the slurry distribution loop because decomposition in a premix tank exceeding 48 h alters copper removal rate and within-wafer non-uniformity. Compliance for this application is anchored to SEMI C30-0618 Grade 1 high-purity hydrogen peroxide, with particulate control validated in an ISO 14644-1:2015 Class 4 cleanroom and trace metal analysis performed by ICP-MS using ASTM D5673-16 sample preparation procedures. Slurry formulations combine 1.0–5.0 vol% oxidant with 1–3 wt% colloidal silica abrasive, 0.05–0.15 wt% benzotriazole passivation agent, and a pH adjusted to 4.0–6.0 with an organic acid buffer system; below 1.0 vol% oxidant, copper removal rate drops below 3000 Å/min, while above 5.0 vol% the slurry pH drifts downward and benzotriazole passivation weakens. The downstream copper CMP process uses a 300 mm rotary polisher with platen speed 30–90 rpm, head downforce 1.0–4.0 psi, slurry flow 100–200 mL/min, and in-situ diamond pad conditioning; platen temperature is held at 35–45°C to stabilize oxidant activity. Terminal products include sub-10 nm logic system-on-chip wafers, 176-layer 3D NAND memory arrays, and high-density DRAM devices with copper interconnect layers.
Oxidant addition in tungsten via polishing is maintained at 2.0–4.0 wt% in acidic slurries containing 2–5 wt% alumina abrasive and a pH adjusted to 2.5–3.5; point-of-use injection is mandatory because hydrogen peroxide decomposes exothermically in low-pH premix tanks and shifts tungsten etch selectivity. Compliance references SEMI C30-0618 Grade 1 for oxidant purity, while slurry particle size distribution is characterized by laser diffraction according to ISO 13320-1:2020, with D50 controlled at 0.15–0.35 µm to prevent microscratching of interlayer dielectric films. The production sequence follows contact etch, Ti/TiN liner deposition, CVD tungsten fill, and CMP overburden removal on a multi-head rotary polisher; endpoint is detected by motor current and optical reflectance, with platen speed 40–80 rpm, downforce 2.0–6.0 psi, slurry flow 80–150 mL/min, and ex-situ pad conditioning after every 50 wafers. Qualified output includes tungsten plug contacts and vias in 300 mm logic, DRAM, and 3D NAND wafers, where post-CMP plug height recess is held below 200 Å to preserve contact resistance.
For shallow trench isolation oxide polishing, the oxidant is added at 0.1–0.5 wt% in ceria-based slurries to maintain the Ce³⁺/Ce⁴⁺ redox balance and limit organic residue on densified oxide surfaces. The compliance envelope includes SEMI C30-0618 Grade 1 oxidant purity and ISO 14644-1:2015 Class 4 handling; the slurry formulation is compounded at 0.5–1.5 wt% ceria abrasive, pH 4.0–6.0, with a typical oxidant addition of 0.2 wt%. The downstream STI CMP process uses a 300 mm polisher with a polyurethane pad, platen speed 50–100 rpm, downforce 1.5–3.0 psi, slurry flow 120–180 mL/min, and a high-selectivity second step that stops on silicon nitride. Finished wafers encompass logic system-on-chip wafers, embedded non-volatile memory, and image sensor dies, where STI isolation leakage remains below 1 nA/cm² under wafer-level test.
Barrier-layer clearance after bulk copper CMP is performed with oxidant concentration reduced to 0.5–1.5 wt% in alkaline silica-based slurries containing 1–2 wt% colloidal silica, 0.02–0.10 wt% benzotriazole, and pH 8.0–10.0. Compliance is anchored to SEMI C30-0618 Grade 1 for oxidant purity and ASTM G31-72 immersion testing for copper corrosion control; electrochemical validation is conducted by Tafel scans, with copper etch rate held below 10 Å/min during barrier clearing to avoid line resistance degradation. The integrated process sequence follows bulk copper planarization, then removes TaN/Ta barrier films on a high-speed platen at 0.5–1.5 psi downforce, 70–100 rpm platen speed, 100–150 mL/min slurry flow, and optical endpoint detection; low downforce is selected to prevent low-k dielectric delamination and oxide erosion. The slurry must be used within 24 h after mixing because pH-dependent decomposition of the oxidant reduces barrier removal rate by more than 15% on aged batches. Qualified output consists of 300 mm copper interconnect wafers for logic nodes at 14 nm and below, where sheet resistance and interline capacitance are confirmed by four-point probe mapping and 1 MHz CV measurement.
During through-silicon via copper reveal polishing, the oxidant is subjected to variable copper ion loading from electroplated via fill, requiring point-of-use mixing at 1.0–2.0 wt% hydrogen peroxide with 1–3 wt% colloidal silica abrasive, 0.05–0.20 wt% oxalic or citric acid chelator, and pH 5.0–7.0. The oxidant purity is governed by SEMI C30-0618 Grade 1, while post-CMP residue control is validated by time-of-flight secondary ion mass spectrometry and surface particle counts in an ISO 14644-1:2015 Class 4 environment; the process must limit copper dishing to below 200 Å and silicon oxide erosion to below 100 Å. The downstream sequence includes via-middle TSV formation, temporary bonding, wafer backside grinding, wet etch reveal, and CMP on a 300 mm polisher with platen speed 40–70 rpm, downforce 1.0–3.0 psi, and slurry flow 90–140 mL/min. Published removal-rate data for sub-10 µm pitch TSV reveal is limited to specific consumable sets, so process qualification proceeds through designed experiments on the production polisher. End-of-line packaged devices include high-bandwidth memory stacks, 2.5D interposer wafers, and 3D integrated packages with TSV pitch below 10 µm.
Silicon carbide wafer polishing uses the oxidant at 0.5–2.5 wt% in alumina or colloidal silica slurries to accelerate Si-face oxidation and reduce surface roughness after lap grinding. Compliance references SEMI C30-0618 Grade 1 oxidant purity and ISO 25178-2:2021 areal surface texture for post-CMP acceptance, with Sa held below 0.5 nm across a 150 mm wafer. The formulation typically combines 2–10 wt% alumina abrasive with 0.5–1.0 wt% hydrogen peroxide and pH 2.0–4.0 for silicon-face CMP, while carbon-face removal may proceed without oxidant; slurry pH is adjusted with nitric acid, and the oxidant is added immediately before the polishing arm to avoid decomposition on hot platen surfaces. The downstream process uses a single-side polisher with platen speed 30–60 rpm, downforce 3.0–7.0 psi, slurry flow 80–120 mL/min, and diamond or elastomer pad conditioning; silicon-face removal rates of 100–500 nm/h are typical, reflecting the chemical inertness of hexagonal SiC. Terminal products are 150 mm and 200 mm silicon carbide substrates for 650 V–1.7 kV MOSFETs, Schottky barrier diodes, and epitaxial growth base wafers; post-CMP surface roughness is verified by atomic force microscopy before epitaxial deposition.
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CMP Oxidant Electronic/EL Grade is an aqueous hydrogen peroxide formulation supplied at 30.0–32.0% w/w for point-of-use blending in semiconductor chemical mechanical planarization slurries. The product is specified for reduced metallic impurity ceilings, controlled particle counts, and a stabilizer package compatible with acidic copper and tungsten slurry formulations. The Electronic/EL designation distinguishes the material from technical-grade and reagent-grade hydrogen peroxide through filtration, packaging, lot-specific certificate-of-analysis coverage, and trace-metal control aligned with wafer fabrication requirements. In CMP service, the peroxide species shifts the surface potential of copper, tungsten, and barrier films into an oxidized regime. The resulting oxide or mixed oxide/hydroxide film is then removed by abrasive action while recessed regions remain protected by the passivation layer.
The active component is H2O2, CAS 7722-84-1, with a molecular mass of 34.014 g/mol. The as-supplied liquid has a density of approximately 1.11 g/cm³ at 20 °C and a typical pH of 3.0–4.5 because of acid stabilizers. The assay window of 30.0–32.0% w/w is controlled by iodometric titration; the corresponding active oxygen content is approximately 14.1–15.1%. Metallic impurity ceilings are evaluated by inductively coupled plasma mass spectrometry after matrix dilution and are commonly aligned with SEMI C30 Table 1 for electronic/EL-grade peroxide. Table 1 summarizes a typical lot-release profile; actual values are reported on the lot certificate of analysis.
| Parameter | Method | Typical lot-release target |
|---|---|---|
| Hydrogen peroxide assay | Iodometric titration, SEMI C30 | 30.0–32.0% w/w |
| Free acid as H2SO4 | Acid-base titration | ≤ 0.05 meq/100 mL |
| Residue after evaporation | Gravimetric | ≤ 20 mg/L |
| Chloride | Ion chromatography | ≤ 0.5 ppm |
| Sulfate | Ion chromatography | ≤ 2 ppm |
| Phosphate | Ion chromatography | ≤ 2 ppm |
| Total organic carbon | Combustion catalytic oxidation | ≤ 10 ppm |
| Iron | ICP-MS per SEMI C30 | ≤ 10 ppb |
| Aluminum | ICP-MS per SEMI C30 | ≤ 10 ppb |
| Copper | ICP-MS per SEMI C30 | ≤ 5 ppb |
| Particles ≥ 0.2 µm | Laser particle counting | ≤ 100 counts/mL |
The stabilizer package is a critical formulation variable. Phosphate or organophosphonate stabilizers retard peroxide decomposition but can increase residue after evaporation. Tin-based stabilizers are also used at low concentration. For CMP oxidant service, the stabilizer chemistry must not flocculate silica, ceria, or alumina abrasives or interfere with the electrochemical action of corrosion inhibitors such as benzotriazole. Ultrafiltration through sub-micrometer membranes controls particulate contamination, but filter material must not leach cations or initiate peroxide decomposition. The product should not be treated as a commodity peroxide because stabilizer content, metal impurity profile, and packaging cleanliness directly affect wafer defectivity and removal-rate stability.
The active half-cell reaction is H2O2 + 2H+ + 2e− → 2H2O, with a standard reduction potential of approximately 1.776 V against the standard hydrogen electrode. In copper CMP, H2O2 oxidizes Cu0 to Cu2O and CuO depending on pH and concentration. Glycine or other chelators then dissolve the mechanically abraded oxide. The process is not monotonic: when point-of-use H2O2 concentration is below 0.5% w/w, copper removal may become dissolution-limited and recessed features may not retain adequate passivation. In the 1.0–3.0% w/w range, passivation and mechanical removal are generally balanced for silica- or alumina-based copper slurries. Above 5.0% w/w, copper removal can become passivation-limited because the oxide film thickens faster than the abrasive removes it. Published removal-rate peaks for copper CMP vary with abrasive type, pad, downforce, and chelator concentration; published data for this specific formulation is limited, so the concentration window must be re-established for each slurry blend.
For tungsten CMP, the oxidant converts W0 to WO3 or hydrated WO3 surface oxides under acidic pH, typically 2–4. The oxide is then removed by the abrasive. An oxidant deficit may cause tungsten residue or recess, while excess oxidant may passivate the surface and reduce removal rate. The pH at the point of use is usually adjusted within the slurry formulation; the EL-grade peroxide should be added downstream of acid calibration to avoid decomposition in low-pH hold tanks. The open-circuit potential shift on copper is commonly observed to be between 100 mV and 250 mV when H2O2 is increased from 0.5% to 2.0% w/w at pH 5.0. This potential shift correlates with the onset of oxide passivation.
Material removal rate during CMP can be approximated by the Preston equation: RR = Kp · p · v, where p is downforce pressure and v is relative velocity. The Preston coefficient Kp is not constant with oxidizer concentration; it changes with the thickness and hardness of the passivating oxide. For copper in a pH 5.0 slurry containing 2.0% w/w H2O2, the static passivation layer is typically a mixed Cu2O/CuO film with thickness below 5 nm. Mechanical abrasion locally removes this film and exposes Cu to fresh oxidant, producing a spatially controlled removal process. At high downforce or low oxidizer concentration, the passivation layer may be insufficient and copper loss into recessed features can increase.
On a 300 mm copper CMP platform using a porous polyurethane pad and a slurry flow of 150–250 mL/min, point-of-use mixing of a concentrated abrasive slurry with the oxidant at a static mixer is preferred. The oxidant flow is trimmed to maintain a bath concentration of 2.0 ± 0.2% w/w in many copper slurries because wider excursions are associated with removal-rate shifts exceeding 10%. The exact control limit is slurry-specific. Bubble generation from peroxide decomposition can create pad glazing and non-uniform material removal if the distribution system does not include degassing or bubble detection. Wetted surfaces in the oxidant feed path should be polytetrafluoroethylene, perfluoroalkoxy alkane, or high-purity polyvinylidene fluoride. Stainless steel, brass, and copper fittings are incompatible because they accelerate peroxide decomposition and release cations. Point-of-use filtration with a 0.1 µm membrane removes precedent particles without reducing peroxide activity if the membrane is pre-wetted and the housing is non-metallic.
Technical-grade H2O2 can contain total metallic impurities two to four orders of magnitude higher than electronic/EL-grade material. Sodium, iron, copper, and aluminum are the primary risks because mobile ions migrate under bias and transition metals can contribute to dielectric leakage or silicide defects. Substitution of technical-grade material in a copper CMP slurry may produce wafer edge defects, increased surface roughness, and post-clean metal residues even when the active peroxide concentration is identical. Reagent-grade H2O2 may have acceptable assay but lacks the packaging and particle controls required for semiconductor use.
Ammonium persulfate introduces sulfate and ammonium residues; it is also a strong oxidant in certain acidic systems but can generate decomposition byproducts that affect post-polish cleaning. Hydrogen peroxide decomposes primarily to water and oxygen, leaving no solid residue under controlled conditions. Compared with ferric nitrate, which is used in some tungsten slurries, EL-grade peroxide does not add iron to the wafer environment. Iron contamination is a known cause of oxide charging and minority carrier lifetime degradation. Compared with organic peroxides, hydrogen peroxide has a simpler carbon-free decomposition pathway and is less likely to leave carbonaceous residue after post-CMP cleaning. Table 2 summarizes substitution differences based on typical industrial-grade properties.
| Oxidant system | Active species | Typical metallic impurity level | Suitability for copper CMP | Primary limitation |
|---|---|---|---|---|
| Technical-grade H2O2 | H2O2 | 100–1000 ppb total metals | Poor | Metallic contamination and particle variability |
| Electronic/EL-grade H2O2 | H2O2 | ≤ 10 ppb per element | High | Requires chilled storage and vented gas handling |
| Ammonium persulfate | S2O82− | 100 ppb–1 ppm | Moderate | Sulfate residue, lower pH stability |
| Ferric nitrate | Fe3+ | 1–50 ppm | Poor for Cu; used in W | Iron contamination and pH coupling |
The operational boundary for the CMP Oxidant Electronic/EL Grade is directly linked to thermal stability. Storage should be maintained at 5–30 °C in a vented area; the decomposition rate approximately doubles for every 10 °C increase above room temperature. At temperatures above 35 °C, oxygen evolution can create pressure buildup if the container is not vented. The product is a strong oxidizer and is assigned to UN 2014, Class 5.1, Packing Group II for transport. The shelf life is typically 12 months from the date of manufacture when stored in the original unopened, vented container at 20 °C.
Incompatibilities include transition-metal salts, especially iron and copper, because they catalyze Fenton-type decomposition. Contact with carbon steel, stainless steel, brass, copper, and manganese dioxide must be avoided. Ammonia and organic amines at pH 8 or higher increase base-catalyzed decomposition and should not be combined with the oxidant unless the mixture is part of an engineered, vented blend with cooling. Do not return unused product to the original container after sampling because contamination can initiate decomposition. Process equipment should be passivated and thoroughly rinsed with ultrapure water before introduction of the peroxide. Slurry blending systems should include local exhaust ventilation, bubble detection, and pressure relief because oxygen evolution can occur during extended recirculation. Process engineers should verify lot-specific stabilizer content and trace-metal concentrations against the slurry formulation before point-of-use blending.
