| HS Code | 557814 |
| Product Name | CMP Metal Ion Cleaner Electronic/EL Grade |
| Chemical Category | Aqueous metal ion chelating/cleaning solution |
| Grade | Electronic/EL Grade |
| Appearance | Clear colorless liquid |
| Ph At 25 C | 6.0-7.5 |
| Density At 25 C | 0.998-1.005 g/cm³ |
| Metal Ion Impurities | < 1 ppb per element |
| Particle Count | < 50 particles/mL at ≥0.2 µm |
| Evaporation Residue | < 5 ppm |
| Solubility In Water | Fully miscible |
| Flash Point | Non-flammable |
| Storage Temperature | 15-35°C |
As an accredited CMP Metal Ion Cleaner Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Available in 1-gallon HDPE bottle: CMP Metal Ion Cleaner Electronic/EL Grade, high-purity formulation for semiconductor CMP residue removal. |
| Container Loading (20′ FCL) | A 20′ FCL of electronic/EL grade CMP metal ion cleaner, packaged in sealed drums, ensuring high-purity for semiconductor processes. |
| Shipping | CMP Metal Ion Cleaner Electronic/EL Grade is an ultrapure, electronics-grade aqueous solution for semiconductor processing. Ship in clean, chemically compatible, tightly sealed containers, protected from contamination and freezing. Ensure proper labeling, SDS availability, and compliance with applicable transport regulations for electronic chemicals. |
| Storage | Store in a clean, dry, well-ventilated area away from direct sunlight, heat sources, and incompatible chemicals. Keep the container tightly sealed to prevent moisture absorption, contamination, or degradation of electronic/EL grade purity. Use original packaging or approved high-density polyethylene containers. Maintain moderate, stable temperatures, avoid freezing, and follow all handling and disposal regulations. |
| Shelf Life | Shelf life is typically 12 months from manufacture when stored sealed in a cool, dry, inert environment. |
On a 300 mm copper damascene line, post-CMP metal ion control begins when the polished wafer transfers from the final platen into a sequential brush-and-spin clean module. The electronic-grade metal ion cleaner is dispensed at 1:20 to 1:50 dilution with ultrapure water conforming to ASTM D5127-13(2020) Type E-1, at dispense arm flow rates between 0.6 L/min and 1.0 L/min and wafer surface temperatures of 22 °C to 35 °C. The formulation is pH-adjusted to 5.5–6.5, where the chelation of Cu2+ and Cu+ species proceeds sufficiently fast to prevent redeposition onto low-k dielectrics and copper lines during the 30 s to 60 s dwell. PVA brush scrubber downforce is maintained at 0.3 psi to 0.7 psi; excessive downforce increases shear but also accelerates low-k dielectric damage on patterned wafers. Benzotriazole (BTA)-derived inhibitor films are removed by a combination of ligand exchange and brush shearing; incomplete removal results in via resistance shifts measured by parametric test. Cleaner efflux is monitored by ICP-MS following ASTM D5673-16, with a lower reporting limit below 1 µg/L for Cu. The cleaned wafers proceed to barrier CMP or post-clean anneal; the end product is copper interconnect for logic devices at 7 nm to 5 nm nodes on 300 mm substrates. Process boundaries include loss of chelation capacity if bath pH drifts below 4.0 or above 7.0 under high copper loading from dense patterned wafers; that condition may create edge copper redeposition, detectable by post-clean TXRF.
Process parameter matrix for post-CMP metal ion cleaning by substrate class.
| Substrate / application | Cleaner dilution (v/v) | pH setpoint | Temperature (°C) | Dwell time (s) | Analytical control |
|---|---|---|---|---|---|
| Copper damascene | 1:20–1:50 | 5.5–6.5 | 22–35 | 30–60 | VPD-ICP-MS per ASTM D5673-16 |
| Tungsten contact | 1:10–1:30 | 2.0–3.5 | 25–40 | 45–90 | TXRF for W, Fe |
| STI oxide | 1:30–1:100 | 9.0–10.5 | 22–40 | 20–40 | VPD-ICP-MS for Al, Fe, Na |
| TSV copper | 1:10–1:25 | 5.0–6.0 | 35–50 | 45–120 | ICP-MS on rinse effluent per ASTM D5673-16 |
Tungsten CMP slurries introduce iron, tungsten, and alumina particles into high-aspect-ratio contact structures. The post-clean step requires a cleaner that removes W and Fe ions while limiting tungsten recess to below the inline AFM threshold. In single-wafer spray processing on 300 mm wafers, the formulation is diluted to 1:10–1:30 and maintained at an acidic pH of 2.0–3.5 to keep dissolved tungsten species soluble and to disperse residual alumina. Contact time is controlled at 45 s–90 s; longer exposure at pH below 2.0 produces measurable tungsten plug recess above 1.5 nm on array contacts. The rinse step uses ultrapure water meeting SEMI C63-0221 metal specifications, and final residue is analysed by TXRF with detection limits below 1×109 atoms/cm² for Fe and W. The cleaned wafer moves to Ti/TiN adhesion layer deposition and chemical vapour deposition tungsten fill; the resulting contact plugs are used in DRAM and 3D NAND wordline/bitline stacks. Incompatibility exists with hydrogen peroxide-containing additives above 1 wt%, which accelerates tungsten dissolution through tungstic acid formation.
In shallow trench isolation integration, oxide CMP slurries introduce Al, Fe, and Na ions that must be removed before pad oxide regrowth and silicon nitride liner deposition. The metal ion cleaner is applied at 1:30–1:100 dilution on a 300 mm single-wafer scrubber with megasonic energy between 0.8 W/cm² and 1.2 W/cm² and a pH of 9.0–10.5. The alkaline condition ionizes surface silanol groups, reducing metal cation adsorption while the chelator complexes free Al3+, Fe3+, and Na+. Dwell time is limited to 20 s–40 s; prolonged contact at pH above 10.5 can roughen plasma-enhanced CVD oxide by surface etching. Post-clean metal contamination is quantified by vapour phase decomposition ICP-MS following ASTM D5127-13(2020) sampling protocols. The end product is the STI dielectric module for sub-20 nm logic and 1x-nm DRAM isolation. Published data for low-temperature STI liner compatibility with this cleaner at ≤30 °C is limited; process qualification therefore includes dielectric breakdown ramp testing.
Through-silicon via post-CMP cleaning presents a high copper load because the plated via fill can contribute dissolved Cu2+ at concentrations orders of magnitude above damascene lines. The cleaner is typically dispensed at 1:10–1:25 dilution, with pH held at 5.0–6.0 and wafer temperature raised to 35 °C–50 °C to maintain chelation kinetics. In TSV structures with via diameter 5 µm to 10 µm and aspect ratios from 8:1 to 12:1, mass transfer into the via bottom is the controlling variable; single-wafer spray tools with nitrogen bubble injection or dual-fluid nozzles deliver higher shear than batch immersion. Dwell time is extended to 45 s–120 s. Exhausted cleaner chemistry at the wafer edge may redeposit copper onto exposed silicon nitride passivation if the rinse delay exceeds 5 s. Analytical control uses ICP-MS on rinse effluent following ASTM D5673-16 and TXRF on via arrays. The finished wafers are used in high-bandwidth memory stacks and silicon interposers. The operational boundary is defined by chelator concentration: when copper ion load exceeds the stoichiometric chelation capacity at the chosen dilution, residual Cu2+ increases exponentially, which is detectable by inline conductivity sensors.
For legacy aluminium interconnect CMP, the cleaner is typically applied at 1:30 dilution with pH 8.0–9.0 and must meet SEMI C63-0221 trace metal limits; inline pH and conductivity monitoring are sufficient because Al3+ removal is well characterized, and the cleaned wafers proceed to 0.18 µm to 0.13 µm aluminium interconnect patterning.
Reclaimed 300 mm silicon wafers after double-side polishing require metal ion cleaning to restore surface purity before epitaxial deposition. The cleaner is applied in an immersion or spray bench at 1:20–1:50 dilution and pH 6.0–8.0, followed by a 10 min ultrapure water cascade rinse. Metal targets for Cu, Fe, Ni, and Zn are verified by VPD-ICP-MS per ASTM D5127-13(2020) with reporting limits below 1×109 atoms/cm². The process prevents metallic contamination from degrading carrier lifetime in epi wafers used for power devices. Equipment batch-to-batch variance is primarily governed by incoming wafer metal load and rinse tank resistivity; a rinse tank resistivity drop below 18 MΩ·cm triggers chemistry replacement. Incompatibility with hydrofluoric acid-containing pre-clean steps must be managed because residual fluoride decreases metal-chelate stability.
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CMP Metal Ion Cleaner Electronic/EL Grade is an aqueous post-chemical mechanical planarization cleaning formulation used to remove residual metal ions, slurry abrasives, and organic complexing by-products from copper, tungsten, cobalt, and dielectric surfaces. The Electronic/EL Grade designation identifies a quality gate aligned with electronic-chemical service rather than general industrial cleaning. The product is supplied as a liquid concentrate for dilution with ultrapure water meeting ASTM D5127 Type E-1 criteria. It is typically dispensed through point-of-use filtration rated at 0.1 µm and applied in batch immersion tools, spray processors, or single-wafer cleaning modules. Because the formulation is aqueous and chelant-bearing, it addresses ionic contamination that persists after slurry removal and brush scrubbing. The cleaner does not contain abrasive particles and is not a slurry conditioner. Its role is limited to post-polish surface preparation before barrier/liner deposition or subsequent lithography.
Specifications for Electronic/EL Grade products are defined by trace-metal ceilings, particle counts, and anion control. Analytical verification is performed by inductively coupled plasma mass spectrometry according to ASTM D5673-16 for dissolved elements and by ion chromatography according to ASTM D4327-17 for chloride and sulfate. pH is measured with a calibrated electrode according to ASTM D1293-18. A typical quality gate is shown in Table 1, but the figures should be read as class-typical industrial acceptance criteria rather than a universal datasheet. Published data for this specific configuration is limited; exact lot-release values are manufacturer-specific.
Table 1: Typical Electronic/EL Grade quality-gate parameters
| Parameter | Test Method or Instrument | Typical Electronic/EL Grade Quality Gate |
|---|---|---|
| Appearance | Visual inspection / turbidity meter | Clear, no visible haze |
| pH at 25 °C | ASTM D1293-18 | 2.5–4.0 as supplied |
| Trace metals: Na, K, Ca, Mg, Fe, Cu, Zn, Al | ASTM D5673-16 ICP-MS | ≤ 10 ppb each; ≤ 50 ppb total |
| Chloride, sulfate | ASTM D4327-17 ion chromatography | ≤ 500 ppb each |
| Particle count ≥ 0.2 µm | Light-scattering particle counter | ≤ 100 particles/mL as supplied |
| Point-of-use filtration | Membrane filter | 0.1 µm retention rating |
In production wet benches, the cleaner is typically diluted with ultrapure water at a ratio of 1:10 to 1:50, depending on the metal-loading challenge and the downstream defect budget. Bath temperature is held between 25 °C and 45 °C. Process time for batch immersion is commonly 3–10 min; single-wafer spray contact time is shorter, often 30–90 s. After dispense, a cascading rinse with hot or cold ultrapure water follows. In spray tools, the chemical is applied through a low-pressure fan or megasonic nozzle. In single-wafer tools, the formulation must tolerate short residence time and high disc rotation, usually 500–1,500 rpm. The cleaner is not recommended for drying via vapor phase unless a separate drying chemistry is qualified. Metal removal is monitored by wafer-level TXRF or VPD-ICP-MS, not by bath color or conductivity alone.
On copper/low-k stacks, the cleaner must remove metal ions while minimizing copper oxidation and dielectric k-value shift. The pH is held in a moderately acidic to near-neutral band. When pH drops below 2.0, copper etch rate may exceed 0.5 Å/min depending on chelator and oxidizer content, which becomes unacceptable for narrow-line damascene structures. When pH rises above 6.0, tungsten or cobalt oxide surfaces may become more difficult to clean because metal-hydroxide species adsorb. The product is therefore used within a pH window where chelation dominates over acid dissolution. Surface compatibility is evaluated by electrochemical impedance spectroscopy and by post-clean defect maps on patterned wafers. Low-k films such as SiOC and porous organosilicate are sensitive to amine-based alkaline cleaners; this product is formulated to avoid free amine ligands, reducing the risk of dielectric swelling. Titanium nitride and tantalum nitride barrier interfaces should be evaluated for galvanic effects when copper and cobalt are exposed simultaneously. Process engineers typically run split-lot tests with 25-wafer cassettes to compare metal removal efficiency and sheet resistance shift. Copper surface roughness after cleaning is measured by atomic force microscopy; an increase exceeding 0.2 nm RMS over the polished baseline may indicate over-aggressive cleaning or rinsing stagnation.
Mechanistically, the cleaner operates through acid-base neutralization and complexation. Residual metal ions such as Cu2+, Fe3+, Al3+, and tungsten species are converted into soluble complexes by carboxylate or sulfonate ligands. The formation constants for copper-carboxylate complexes are high enough to prevent redeposition at the wafer surface, but the ligand-to-metal ratio must be maintained above stoichiometric excess. If the bath becomes depleted, metal ions can undergo hydrolysis and leave hydroxide residues. Chelator saturation is detected by trace-metal titration and by an upward trend in particle counts. The cleaner also contains a pH buffer to resist acidification by dissolved slurry residues. Incoming slurry particles are typically silica or alumina; the cleaner removes them by suspension and undercutting rather than by dissolving them. Slurry particles are negatively charged at the working pH, and the cleaner maintains a zeta potential that prevents agglomeration. This mechanism reduces the formation of large particle agglomerates that can increase defect density after spin drying.
Metal ion removal efficiency is quantified by comparing pre-clean and post-clean contamination levels. A standard test uses intentionally contaminated silicon or copper wafers with known concentrations of transition metals, followed by VPD-ICP-MS or TXRF. For a 1012 atoms/cm² initial contamination, a 5–10 min immersion clean at 35 °C may reduce surface metals by two to three orders of magnitude, depending on substrate and contamination age. On thermally grown silicon dioxide, removal of iron and copper is generally more complete than on porous low-k surfaces because the porous matrix can adsorb ions below the surface. Analytical verification for the cleaning bath itself uses ICP-MS with method detection limits below 1 ppt for high-atomic-weight elements. Cleanroom handling under ISO 14644-1:2015 Class 4 or better is common. Bath samples are collected in acid-leached perfluoroalkoxy bottles to avoid extractable metal contamination. The rinse water should meet ASTM D5127 Type E-1 limits for total oxidizable carbon and dissolved metals; otherwise the cleaner cannot achieve low surface metal levels.
A distinction is observed when the Electronic/EL Grade product is compared with commodity citric acid, oxalic acid, or dilute hydrochloric acid blends. Commodity acid solutions typically carry parts-per-million metal impurities from raw materials and are not packaged with point-of-use particle filtration. By contrast, Electronic/EL Grade material is lot-tested against sub-ppb metal ceilings and supplied in cleanroom-compatible containers. Solvent-based post-CMP cleaners remove organic residues and dry quickly but may lack the chelation capacity needed for multivalent metal ions. Alkaline amine-based cleaners provide high particle removal on some dielectric films but can increase copper roughness and dielectric k-value shift. The CMP Metal Ion Cleaner Electronic/EL Grade occupies an intermediate position: aqueous enough for UPW rinsing, acidic enough to neutralize slurry residues, and chelating enough to bind trace metals without aggressive etching. Differences are most visible on defect maps after processing copper/low-k wafers, where solvent-only or unbuffered acid treatments may show higher post-clean copper oxide residues or water-mark defects.
Table 2: Comparative characteristics of post-CMP cleaning approaches
| Parameter | CMP Metal Ion Cleaner Electronic/EL Grade | Commodity Acid Cleaner | Amine-Based Alkaline Cleaner | Solvent Cleaner |
|---|---|---|---|---|
| Trace-metal impurity in as-supplied liquid | ≤ 10 ppb per element | Not guaranteed | Not guaranteed | Not controlled |
| Use-phase pH class | 2.5–4.0 | 1.0–3.0 | 8.0–10.0 | Neutral or apolar |
| Ionic metal removal | High due to chelation | Moderate, acid dissolution | Low to moderate | Low |
| Copper etch risk | Low to moderate | High if pH below 2.0 | Moderate | Low |
| Low-k compatibility | Moderate to high | Moderate | Risk of swelling | Risk of swelling |
| Rinseability in UPW | High | High | Moderate | High but drying limited |
| Typical operating temperature | 25–45 °C | 20–60 °C | 25–50 °C | 20–40 °C |
Bath life in immersion tools is constrained by metal loading, evaporation, and bacterial growth if organic acids are present. Typical bath life is 8–24 h for batch immersion, but it may be shorter when the bath is heavily loaded with copper from patterned wafers. Metal ion concentration in the bath should be monitored by ICP-MS or colorimetric titration. When total dissolved copper exceeds 1–5 ppm, the bath is typically replaced to avoid redeposition. Filtration is maintained with 0.1 µm point-of-use membrane filters. Differential pressure across the filter is measured; an increase of 0.5–1.0 bar above initial at constant flow indicates filter blinding by particles or gel-like residues. Recirculation flow in bench tanks is commonly set at 10–20 L/min per 50 L bath volume. In single-wafer tools, the cleaner is filtered at source and dispensed without recirculation. Temperature control is critical because chelator solubility decreases below 15 °C and evaporation above 45 °C may shift pH. The cleaner should not be mixed with strong oxidizers such as hydrogen peroxide unless a documented process requires it; uncontrolled oxidizer addition can degrade organic chelators and generate off-specification decomposition products. Waste handling follows site-specific acid neutralization and metal precipitation permits. Fluoride-containing waste streams should be kept segregated if the cleaner is used after oxide CMP. Published data for this specific configuration is limited regarding maximum bath life when copper loading exceeds 5 ppm.
Supply-chain documentation for Electronic/EL Grade material normally includes a lot certificate, ICP-MS trace-metal report, particle count data, and pH verification. Change control records are retained for raw materials, filter changes, and packaging lines to support electronic-chemical traceability. The cleaner is supplied in high-density polyethylene or fluoropolymer containers that are cleaned and leached to reduce extractable metal contamination. Storage should be at 10–30 °C in a dry chemical cabinet. If the product is stored below 10 °C, precipitation of organic constituents may occur; redissolution requires slow warming and mixing under cleanroom conditions. The product should not be combined with amine-based additives because the resulting pH shift and complexation change can reduce metal ion removal and alter copper surface roughness. Equipment qualification on production-scale lines typically includes particle shedding tests, bath stability evaluations, and compatibility checks for elastomers in pumps and valves. These verifications are performed before lot qualification because the cleaner can extract plasticizers or metal ions from non-high-purity wetted components.
