| HS Code | 992507 |
| Product Name | CMP Gelling Agent Electronic/EL Grade |
| Chemical Family | High-purity synthetic water-soluble polymer |
| Appearance | Colorless to pale yellow clear viscous liquid |
| Active Content | 20-30 wt% |
| Ph | 6.0-8.0 as supplied |
| Viscosity At 25c | 800-2000 mPa·s |
| Specific Gravity At 20c | 1.02-1.08 |
| Boiling Point | Approximately 100°C |
| Flash Point | Non-flammable / no flash point |
| Metal Impurities | Na, K, Fe, Cu, Ni, Ca ≤ 10 ppb each |
| Anion Impurities | Cl⁻, SO₄²⁻, NO₃⁻ ≤ 1 ppm each |
| Filtration Standard | Filtered through 0.1 µm membrane |
As an accredited CMP Gelling Agent Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in 1 kg HDPE bottles with airtight seals, nitrogen purged, for high-purity handling and contamination-free delivery. |
| Container Loading (20′ FCL) | 20' FCL loaded with CMP Gelling Agent (Electronic/EL Grade), using sealed, leak-proof drums secured with dunnage for safe transport. |
| Shipping | CMP Gelling Agent Electronic/EL Grade is a high-purity chemical for semiconductor slurry applications. Ship in sealed, contamination-free containers with proper UN/IATA/IMDG labeling. Avoid moisture, static, and temperature extremes; ground and bond during transfer. Include Safety Data Sheet, hazmat declarations, and handling precautions in accordance with local regulations. |
| Storage | Store in a tightly sealed, original container in a cool, dry, well-ventilated area. Keep away from direct sunlight, heat sources, and incompatible materials. Avoid moisture and contamination to maintain electronic/EL-grade purity. Ensure proper labeling and follow the Safety Data Sheet for specific temperature limits and handling requirements. |
| Shelf Life | Store in a cool, dry area, tightly sealed. Shelf life is typically 12 months from manufacture date when handled properly. |
Oxide interlayer dielectric planarization on 300 mm silicon substrates exposes a fumed-silica slurry to prolonged residence in low-shear distribution loops; without associative thickening, particle settling can exceed 8% concentration drift after 24 h at rest. The electronic/EL grade CMP gelling agent is inserted at 0.02–0.10 wt% of total slurry mass as a pre-hydrated stock solution at 0.5–2.0 wt%, typically after abrasive dispersion and before final pH adjustment to 9.0–11.5. Compliance for this downstream platform is specified through SEMI C43 particle size distribution reporting, ASTM D2196-20 rotational viscosity measurement at 100 s⁻¹, and cleanroom handling governed by ISO 14644-1:2015 Class 3. On a production CMP line, the slurry is supplied to a rotary 300 mm polisher with six-zone head pressure control at a downforce of 2.0–5.0 psi, platen speed of 60–90 rpm, slurry flow of 150–250 mL/min, and point-of-use filtration through a 0.5 µm PTFE membrane. The resulting terminal products are planarized 300 mm silicon wafers used for shallow trench isolation, pre-metal dielectric, and interlayer dielectric stacks in logic and memory devices. A process limitation observed on production mixers is local gelation at the injection port when the stock solution contacts pH-adjusted fumed silica above 11.0 without sufficient high-shear dispersion; therefore, the addition point is located upstream of an in-line high-shear mixer with defined residence time, and viscosity acceptance limits are held at 1.8–4.5 mPa·s at 100 s⁻¹ to prevent supply-pump head pressure faults. Batch-to-batch viscosity variation in the pre-hydrated stock solution must remain within ±0.3 mPa·s to avoid head pressure alarms and downstream point-of-use filter pressure excursions beyond 0.7 MPa.
In post-bulk copper barrier and liner removal for dual damascene back-end-of-line processing, the CMP gelling agent is used at 0.01–0.05 wt% of total slurry mass to deliver shear-thinning behavior without interfering with endpoint detection or benzotriazole passivation chemistry. The relevant specification set includes SEMI C43 for slurry particle size distribution, ASTM D2196-20 for low-shear viscosity, and cation purity release under SEMI C1 reagent protocols because the slurry contacts exposed copper and low-k dielectric layers. On the barrier platen, after bulk copper removal, downstream processing uses a softer polyurethane pad, platen speed of 70–100 rpm, downforce of 1.0–2.5 psi, and slurry flow of 100–180 mL/min; the material removes Ta/TaN liner and low-k cap residues at controlled line-recess rates. Terminal products are copper/low-k interconnect structures at 28 nm, 14 nm, and 7 nm design nodes, where the slurry must maintain viscosity of 1.2–2.8 mPa·s at 100 s⁻¹ to avoid eddy-current endpoint signal attenuation. Increasing the addition ratio above 0.10 wt% in this application can raise post-clean defect counts due to polymer residue on porous low-k sidewalls; therefore, point-of-use filtration at 0.5 µm and post-CMP brush cleaning are tuned as a pair. Production-scale slurry loops with longer than 30 m PFA tubing require evaluation for dead legs because settling in zero-flow branches produces intermittent viscosity spikes and endpoint drift.
Tungsten contact and plug CMP operates with acidic slurries at pH 2.0–4.0, ferric nitrate oxidizers, and alumina or colloidal silica abrasives. The electronic/EL grade gelling agent is added at 0.03–0.12 wt% of total slurry mass and must remain shear-recoverable after residence in low-pH distribution lines with elevated temperature. Compliance for this application is assessed under ASTM D2196-20 rotational rheometry, SEMI C43 for particle size distribution reporting, and cleanroom slurry preparation according to ISO 14644-1:2015 Class 3. On the polisher, a 200 mm or 300 mm rotary tool runs at a platen speed of 80–100 rpm, downforce of 3.0–5.0 psi, and slurry temperature controlled to 30–40 °C to stabilize oxidation kinetics. Terminal products are tungsten contact plugs and local interconnects in DRAM, 3D NAND, and logic contact layers. A production failure mode is viscosity loss exceeding 30% after 48 h when slurry temperature exceeds 45 °C or when low-pH hydrolysis of the polymer occurs; batch release therefore includes viscosity recovery after a high-shear pre-conditioning cycle, with acceptance at 2.0–5.0 mPa·s at 100 s⁻¹. Acid-compatible grades are required below pH 2.0, and cationic flocculants should not be introduced because they compress the abrasive electrical double layer and accelerate agglomeration in the delivery loop.
| Downstream CMP platform | Addition ratio (wt% of total slurry) | pH window | Target viscosity at 100 s⁻¹ (mPa·s) | Terminal product type |
|---|---|---|---|---|
| Oxide ILD/STI CMP | 0.02–0.10 | 9.0–11.5 | 1.8–4.5 | 300 mm logic and memory wafers |
| Copper barrier/liner CMP | 0.01–0.05 | 8.0–10.0 | 1.2–2.8 | Copper/low-k interconnects |
| Tungsten contact/plug CMP | 0.03–0.12 | 2.0–4.0 | 2.0–5.0 | DRAM and 3D NAND contact plugs |
| Silicon carbide CMP | 0.05–0.15 | 10.5–11.5 | 2.5–6.0 | 4H/6H-SiC epi-ready wafers |
| Sapphire LED substrate CMP | 0.02–0.08 | 11.0–13.0 | 2.0–5.5 | 2-inch, 4-inch, 6-inch sapphire wafers |
For silicon carbide wafer polishing lines where diamond abrasive suspension stability determines total batch productivity over 10–20 h cycles, the CMP gelling agent is introduced at 0.05–0.15 wt% of total slurry mass to prevent particle depletion at the platen edge. Quality release of the mixed slurry is made against ASTM D2196-20 rheological measurements, SEMI C43 particle size distribution drift limits, and surface texture verification under ISO 4287:1997 after polishing. Downstream processing uses a double-side lapping step with a copper or tin platen and diamond abrasive at 0.1–3.0 µm, followed by chemical mechanical polishing with colloidal silica at pH 10.5–11.5, platen speed 50–80 rpm, downforce 300–500 gf/cm², and slurry flow 80–150 mL/min. Terminal products are 4H and 6H silicon carbide epi-ready wafers for power metal-oxide-semiconductor field-effect transistors and merged PiN-Schottky diodes. Published data for this specific configuration is limited; therefore, on-site qualification via dynamic light scattering after 24 h and viscosity retention above 85% across a 20 h recirculation interval is recommended before changing the addition ratio. Shear degradation above 10⁴ s⁻¹ in recirculation loops can reduce suspension capacity and must be evaluated with a shear-history loop test rather than a single-point viscosity measurement.
Because sapphire LED substrate removal-rate uniformity is sensitive to slurry contact area across a 6-inch wafer, the electronic/EL grade gelling agent is prescribed at 0.02–0.08 wt% of total slurry mass in high-pH colloidal alumina suspensions. The application is governed by ISO 4287:1997 surface texture acceptance, ISO 14644-1:2015 Class 3 slurry preparation, and ASTM D2196-20 viscosity testing at 100 s⁻¹. After diamond lapping, the downstream CMP process uses a cast-iron or polyurethane platen, platen speed 40–70 rpm, downforce 400–700 gf/cm², slurry temperature 35–45 °C, and delivery flow of 100–200 mL/min. Terminal products are 2-inch, 4-inch, and 6-inch sapphire substrates for gallium nitride LED epitaxy. The main boundary condition is pH drift above 13.0, which accelerates alumina dissolution and increases ionic strength; the resulting compression of the electrical double layer can cause viscosity drift and particle aggregation, so pH is maintained by controlled potassium hydroxide dosing rather than uncontrolled caustic addition. Post-polish cleaning with brush scrubbing and dilute acid must be qualified because residues of the gelling agent on hydrophobic surfaces can increase haze values if drying occurs before rinsing.
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Chemical mechanical planarization slurries for copper damascene, tungsten contact, and interlayer dielectric processing require suspending agents that maintain abrasive dispersion without increasing point-of-use shear stress. CMP Gelling Agent Electronic/EL Grade is supplied as an anionic acrylate copolymer dispersion in ultrapure water under product code CMP-GA-EL-9500, with secondary viscosity grades CMP-GA-EL-3500, CMP-GA-EL-7500, and CMP-GA-EL-15000. Each grade corresponds to the nominal viscosity of a 1.0 wt% active-polymer solution in deionized water at 25 °C when measured using a Brookfield RV viscometer at 20 rpm in accordance with ASTM D2196-20 Method A. The material is controlled for high-purity slurry formulation where mobile ion contamination and post-polish organic residue are constrained by yield and reliability specifications for sub-28 nm device structures.
Batch-to-batch viscosity for CMP-GA-EL-9500 is controlled within ±10% of target when measured by ASTM D2196-20 Method A. Production-scale slurry compounding records from a 1000 L high-density polyethylene mixing tank indicate that the product can be dosed through a mass-flow liquid addition system at 0.1 kg/min without measurable gel slug formation when the tank is agitated at 300 rpm with a pitched-blade impeller. The most common scale-up failure mode is localized polymer concentration above 2 wt% at the addition point, which produces gel aggregates that are removed by a final 0.1 μm filter but can reduce filter capacity. This failure mode is mitigated by in-line dilution with deionized water at a ratio of 1:10 before injection into the main slurry vessel.
The electronic-grade designation is defined by limits on mobile ions, transition metals, and large-particle counts that separate this product from industrial rheology modifiers. Certificate-of-analysis data for CMP-GA-EL-9500 show sodium below 0.5 ppm, potassium below 0.5 ppm, iron below 0.2 ppm, calcium below 0.2 ppm, and total transition metals below 1.0 ppm when analyzed by inductively coupled plasma mass spectrometry following EPA Method 6020B. Liquid particle counts at the 0.5 μm threshold are maintained below 100 particles/mL using a syringe-style optical particle counter calibrated according to SEMI C79-1118. Total organic carbon is controlled below 50 ppm to limit organic residue after post-CMP cleaning. Final packaging filtration through 0.1 μm polyethersulfone membranes reduces large gel aggregates that would otherwise contribute to micro-scratch defects.
| Parameter | Method/Standard | CMP-GA-EL-3500 | CMP-GA-EL-7500 | CMP-GA-EL-9500 | CMP-GA-EL-15000 |
|---|---|---|---|---|---|
| Nominal viscosity at 1.0 wt% active polymer, 25 °C, 20 rpm | ASTM D2196-20 Method A | 3500 mPa·s ±10% | 7500 mPa·s ±10% | 9500 mPa·s ±10% | 15000 mPa·s ±10% |
| pH as supplied | ASTM E70-19 | 6.5–7.5 | 6.5–7.5 | 6.5–7.5 | 6.5–7.5 |
| Density at 25 °C | ASTM D4052-18a | 1.02–1.06 g/cm³ | 1.02–1.06 g/cm³ | 1.02–1.06 g/cm³ | 1.02–1.06 g/cm³ |
| Sodium content | EPA Method 6020B | <0.5 ppm | <0.5 ppm | <0.5 ppm | <0.5 ppm |
| Iron content | EPA Method 6020B | <0.2 ppm | <0.2 ppm | <0.2 ppm | <0.2 ppm |
| Total transition metals | EPA Method 6020B | <1.0 ppm | <1.0 ppm | <1.0 ppm | <1.0 ppm |
| Liquid particle count ≥0.5 μm | SEMI C79-1118 | <100 particles/mL | <100 particles/mL | <100 particles/mL | <100 particles/mL |
| Total organic carbon | ASTM D7573-18a | <50 ppm | <50 ppm | <50 ppm | <50 ppm |
| Storage shelf life in sealed HDPE containers at 5–35 °C | Manufacturer-controlled stability program | 12 months | |||
In slurry formulation, CMP Gelling Agent Electronic/EL Grade is added at 0.05 wt% to 0.50 wt% based on total slurry mass to establish a low-shear viscosity of 5 mPa·s to 50 mPa·s, sufficient to suspend colloidal silica abrasives with mean particle diameters of 20 nm to 80 nm for periods exceeding 72 h without hard settling. The shear-thinning profile reduces viscosity under polishing conditions; capillary rheometry at 10,000 s⁻¹ in accordance with ISO 11443:2021 typically yields a high-shear viscosity below 3.0 mPa·s, preventing an increase in wafer-scale removal rate non-uniformity. This behavior is more predictable than fumed silica addition, which simultaneously shifts the particle-size distribution and increases the total contact area of abrasive asperities on the pad surface.
High-shear slurry blending systems using rotor-stator mixers or inline high-pressure homogenizers require the gelling agent to be added slowly to the vortex at pH 6.5 to 7.5 to avoid local viscosity spikes. In a 200 L central slurry distribution loop equipped with a 0.05 μm polypropylene point-of-use filter, a 0.2 wt% loading of CMP-GA-EL-9500 produced a filter housing differential pressure increase below 0.7 bar over 24 h in qualification trials. Dispersion stability was retained through 72 h of continuous recirculation at 22 °C, with no measurable shift in mean abrasive particle size when monitored by dynamic light scattering using a 632.8 nm laser source. The low-pressure excursion is attributed to the absence of pre-swollen gel aggregates larger than 0.45 μm after package-level filtration; however, published data for this specific loop configuration is limited, and the 0.7 bar value should be treated as a line-qualification target rather than a guaranteed field result.
When the product is used in slurries containing hydrogen peroxide or ferric nitrate oxidizers, the addition sequence is adjusted so that the gelling agent is pre-diluted in deionized water before oxidizer addition. Direct contact between the concentrated polymer dispersion and pH 2.0 oxidizer stock solution has been observed to produce localized gel particles that are not re-dispersible under standard point-of-use agitation. Shear history during drum transfer and diaphragm pump recirculation can reduce the low-shear viscosity by 5% to 12% per 8 h shift when the system is operated without closed-loop filtration; viscosity should be verified after 8 h of recirculation using a cup-and-bob geometry per ISO 3219-1:2021.
Comparative qualification data for a copper barrier slurry at pH 7.2 indicate that replacement of 0.5 wt% fumed silica with 0.15 wt% CMP-GA-EL-9500 maintains sedimentation stability while reducing the liquid particle count at 0.5 μm from above 10,000 particles/mL to below 100 particles/mL. Unlike fumed silica, the polymer does not contribute a hard particle population that can increase scratch counts during copper line polishing. Compared with cellulose ethers of equivalent low-shear viscosity, the electronic-grade product reduces sodium residue on the wafer surface because the polymer is washed at the manufacturer’s facility to remove alkali metal catalysts. However, the product cannot replace the abrasive component of the slurry; it only modifies the suspension rheology and must be paired with the primary abrasive, typically colloidal silica, ceria, or alumina, at 0.5 wt% to 15 wt% solids.
| Parameter | CMP-GA-EL-9500 | Fumed silica | Cellulose ether |
|---|---|---|---|
| Sodium content | <0.5 ppm | 100–500 ppm | 50–200 ppm |
| Iron content | <0.2 ppm | 10–50 ppm | 5–20 ppm |
| Liquid particle count ≥0.5 μm | <100 particles/mL | >10,000 particles/mL | 500–2,000 particles/mL |
| Contribution to abrasive particle volume | None | Significant aggregate fraction | None |
| Post-polish organic residue in bulk | <50 ppm TOC | <10 ppm TOC | <30 ppm TOC |
Compatibility with cationic biocides or amine-based slurry additives is not recommended; the anionic charge of the polymer can form insoluble complexes that increase defect counts and reduce filtration efficiency. The product is also incompatible with oxidizing systems maintained below pH 2.0 for extended periods, because acid hydrolysis reduces molecular weight and lowers low-shear viscosity. Freeze-thaw cycling must be avoided, and storage below 5 °C may cause phase separation that is not fully reversible upon warming. At addition levels above 0.75 wt%, the low-shear yield stress can exceed 2.0 Pa, which is sufficient to suspend agglomerates that pass through 0.5 μm filters but may contribute to micro-scratch defects on copper lines with widths below 28 nm. The formulation window narrows to ±0.05 wt% when the slurry is used with a 0.1 μm point-of-use filter; higher loadings increase the polymer film thickness during post-CMP cleaning and can shift static water contact angle measurements by more than 5° on SiOC surfaces when measured according to ASTM D5946-17.
Defect maps after copper barrier polishing with the gelling agent at 0.2 wt% were compared with a control slurry containing no suspending agent. Post-CMP cleaning with dilute citric acid and ammonium hydroxide solutions at pH 9.5 removed the polymer residue to below the detection limit of time-of-flight secondary ion mass spectrometry on blanket SiOC coupons. The C-C and C-O secondary ion intensities at the surface were within 15% of the control, suggesting that the polymer does not form a covalently bound organic layer under standard brush-scrub processing. However, if polishing is followed by a delayed clean exceeding 30 min, the residue becomes more difficult to remove and requires a dilute tetramethylammonium hydroxide solution at 0.5 wt% for complete displacement. These cleaning boundaries must be incorporated into the process flow for low-residue targets below 20 defects per wafer at 0.15 μm inspection sensitivity.
