| HS Code | 489137 |
| Product | JSR AR5370 |
| Type | Chemically amplified positive-tone ArF photoresist |
| Exposure Wavelength | 193 nm |
| Polymer Type | Acrylic resin with alicyclic pendant groups |
| Photoacid Generator | Onium-salt based PAG |
| Solvent | Propylene glycol monomethyl ether acetate (PGMEA) |
| Typical Film Thickness | 200 nm |
| Viscosity | 1.5 cP |
| Application | ArF excimer laser lithography for semiconductor patterning |
As an accredited ArF Photoresist JSR AR5370 factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in 1-liter opaque HDPE bottles filled under inert nitrogen, sealed tightly, and stored protected from light at controlled temperature. |
| Container Loading (20′ FCL) | 20′ FCL container loading for JSR AR5370 ArF photoresist ensures sealed, temperature-controlled transport with secure, light-protected packaging. |
| Shipping | Ship as UN1993, Flammable Liquid, n.o.s. (contains photoresist solvents), Class 3, PG II/III, in approved containers. Avoid ignition sources, static discharge, and direct sunlight. Keep containers sealed and upright. Use grounded equipment during transfer. Provide current SDS, dangerous goods declaration, and proper labeling for road, sea, or air transport. |
| Storage | Store JSR AR5370 ArF photoresist in its original, tightly sealed container in a cool, dry, clean area—typically 2–8 °C—away from direct light, UV radiation, heat sources, and oxidizers. Keep upright, avoid moisture and static buildup, and allow the container to reach ambient temperature before opening to prevent condensation. Use only under appropriate cleanroom conditions. |
| Shelf Life | Shelf life is 12 months from manufacture date when stored at 2–8°C in the original, tightly sealed container away from light. |
In front-end-of-line logic patterning at the 193 nm wavelength, JSR AR5370 is applied as a positive-tone chemically amplified resist over an organic bottom anti-reflective coating to suppress substrate reflectivity below 2% at the resist–BARC interface on polished silicon or silicon germanium active layers. The stack is selected for gate and active region masking prior to polysilicon or high-k/metal gate etch, where the dense-line critical dimension is maintained to a target of 90 nm on a 0.93 NA scanner with annular illumination and a sigma band from 0.55 to 0.85. Typical ArF chemically amplified resist dose-to-size in this configuration falls between 15 mJ/cm² and 30 mJ/cm², but AR5370-specific optimum exposure must be generated on the production stack because published lot-specific data are limited.
The coating sequence begins with dilute HF and SC1/SC2 pre-clean, followed by HMDS vapor prime at 90 °C for 60 s. A 40 nm organic BARC is spin-coated and cured at 205 °C for 60 s; JSR AR5370 is dispensed as supplied, without solvent dilution, at 1,500 rpm for a 3 s spread step and 2,200 rpm for the final film thickness of 180 nm. Edge bead removal uses PGMEA-compatible solvent, and the soft bake is held at 100 °C for 90 s with hotplate zone-to-zone uniformity within ±0.5 °C. Post-exposure bake is run at 110 °C for 90 s; development uses 2.38 wt% TMAH at 23 °C, delivered by a 1.0 L/min dynamic dispense for 2 s followed by a 60 s static puddle and an 18 MΩ·cm deionized water rinse for 30 s. On production tracks, the primary failure signatures are density-dependent CD offset, T-topping after airborne amine ingress above 1 ppb, and puddle edge scumming when the developer nozzle idle time exceeds 45 min.
Cleanroom compliance for this segment is governed by ISO 14644-1:2015 Class 1, with airborne molecular contamination control referenced to ISO 14644-8:2013 for amine and acid species because the deprotection chemistry is sensitive to ambient bases. Equipment safety and reliability provisions align with SEMI S2-0820 and SEMI E10-0304. The terminal product is the patterned gate and active layer mask before etch; post-etch CD uniformity is verified by five-point scanning electron microscopy across the scanner slit and scan direction, with rework carried out by O2 plasma strip followed by solvent clean rather than wet strip alone.
DRAM storage node contact patterning places JSR AR5370 above a 60 nm organic BARC and a 30 nm physical vapor deposited titanium nitride hard mask, where substrate reflectivity is modulated by TiN grain size and surface roughness. The exposed contact hole target is 110 nm at a 220 nm pitch on a 0.93 NA 193 nm scanner using off-axis illumination, with illumination shape tuned to a quasar condition to improve high-order diffraction for hole arrays. AR5370-specific process window on TiN is not established by public data and must be extracted from a focus-exposure matrix because TiN reflectivity changes exposure latitude more than bare silicon. Exposure latitude on TiN hard mask holes is monitored through focus-exposure matrices; the dose-to-size shift across the focus range is evaluated against a depth-of-focus target of 0.35 μm for 10% exposure latitude.
The coating stack uses HMDS vapor prime at 100 °C for 90 s, a 60 nm BARC cured at 190 °C for 90 s, and an undiluted AR5370 dispense at 1,800 rpm after a 1,300 rpm spread step to produce a 220 nm film. Soft bake is held at 105 °C for 90 s; post-exposure bake is executed at 115 °C for 90 s. Development uses 0.26 N TMAH at 22 °C, with a two-step dispense consisting of a 0.8 L/min dynamic phase for 1.5 s and a 50 s static puddle, followed by a deionized water rinse at 1.2 L/min for 25 s. Production failure modes on this stack include contact hole scumming at TiN grain boundaries, BARC undercut after extended static puddle, and center-to-edge CD drift when the develop nozzle idle time exceeds 40 min.
Compliance anchors for this segment are ISO 14644-1:2015 Class 1 for particulate control, ISO 16700:2016 for scanning electron microscope magnification calibration used in contact CD metrology, and SEMI S2-0820 for track and exposure tool safety. The terminal structure is the DRAM storage node contact hole pattern transferred through the TiN hard mask into the underlying silicon nitride and oxide stack; post-etch inspection measures hole circularity, edge roughness, and critical dimension after hard mask breakthrough, not after resist develop alone.
Because the 3D NAND contact mask must resolve holes above a thick oxide/nitride stack with wafer topography exceeding 2 μm, JSR AR5370 is coated over a 200 nm spin-on carbon underlayer and a 35 nm silicon-containing anti-reflective coating to preserve etch transfer margins. The contact CD target is typically 120 nm to 180 nm depending on tier height, and the exposure tool is a 0.85 NA 193 nm scanner using off-axis illumination with a weak central pole to improve depth-of-focus for high-aspect-ratio holes. Published AR5370-specific data for this configuration is limited; the baseline process should be qualified on the actual oxide/nitride stack rather than a planar silicon monitor because topographical reflectivity changes the standing wave profile.
The underlayer and silicon-containing ARC are cured according to the supplier baseline before an undiluted AR5370 film of 320 nm is spin-coated at 1,200 rpm following a 900 rpm spread step. Soft bake is ramped at 5 °C/min to 110 °C and held for 120 s to avoid edge stress cracking on thick film; post-exposure bake is held at 120 °C for 90 s. Development uses 2.38 wt% TMAH at 21 °C, with a 70 s double static puddle dispensed by two separate nozzles at 0.6 L/min each, followed by a 30 s rinse. Production failure modes observed in thick ArF chemically amplified resist include edge film cracking when the bake ramp exceeds 10 °C/min, resist scumming at the silicon-containing ARC step, and profile undercut from developer over-saturation in dense hole arrays.
The cleanroom and equipment compliance profile for this segment references ISO 14644-1:2015 Class 1, ISO 14644-2:2015 for ongoing monitoring, ISO 14001:2015 for waste solvent and developer handling, and SEMI S2-0820 for track interlocks and exhaust management. The terminal product is the 3D NAND contact hole mask transferred through the silicon-containing ARC and spin-on carbon stack by anisotropic dry etch; post-etch verification includes cross-section SEM of the top, middle, and bottom hole diameter to quantify bowing and twist, because the lithographic pattern is only the first step in a multi-layer hard mask transfer path.
Low-k organosilicate dielectric stacks present a different reflectivity environment from front-end silicon. For dual damascene via and trench layering, JSR AR5370 is coated over an 80 nm organic BARC and a 30 nm SiCN or TiN hard mask on a 300 mm wafer, with the resist thickness set at 250 nm to balance via resolution against etch resistance. The exposure is performed on a 0.93 NA 193 nm scanner with polarized off-axis illumination, using dipole for trench patterns and annular for via patterns; the target via CD is 100 nm at 200 nm pitch. The main process conflict in this segment is that the low-k dielectric has a higher porosity than silicon, which can generate amine and moisture release during thermal steps and cause resist T-topping unless the AMC environment is tightly controlled.
The coating sequence begins with HMDS vapor prime at 95 °C for 45 s, followed by BARC cure at 200 °C for 60 s. AR5370 is dispensed as supplied at 1,900 rpm after a 1,400 rpm spread step to give a 250 nm film. Soft bake is set at 110 °C for 90 s; post-exposure bake is set at 115 °C for 60 s. Development uses 2.38 wt% TMAH at 23 °C with a 55 s static puddle after a 2 s dynamic dispense at 0.9 L/min, followed by a 25 s rinse. On low-k substrates, the observed failure signatures include standing wave-induced CD oscillation when BARC thickness drifts by more than ±5 nm, resist–BARC intermixing from solvent redissolution if the soft bake temperature drops below 105 °C, and via-to-trench bias shifts when the developer nozzle idle time exceeds 30 min.
This segment anchors compliance to ISO 14644-8:2013 for airborne molecular contamination classes, SEMI S2-0820 for equipment safety, REACH Regulation (EC) No 1907/2006 for solvent and developer substance registration, and RoHS Directive 2011/65/EU for terminal electronic assembly restrictions. The terminal product is the dual damascene via and trench pattern transferred into the low-k film by plasma etch, followed by wet clean, barrier deposition, copper electrochemical plating, and chemical mechanical planarization; lithography rework on low-k stacks must use a low-oxygen strip to minimize dielectric damage, not a conventional high-pressure O2 process.
If the implanted layer requires a resist mask thicker than 300 nm, JSR AR5370 can be evaluated as an implantation block mask for self-aligned source/drain and lightly doped drain steps, with a film thickness of 320 nm to provide stopping power for phosphorus, arsenic, and boron difluoride species at energies below 20 keV. Published AR5370-specific implant tolerance data are limited; qualification requires an implant dose matrix because typical 193 nm chemically amplified resist carbonizes at high dose and may leave aromatic residues after plasma ashing.
The resist is coated to 320 nm at 1,100 rpm after a 800 rpm spread step, soft-baked at 110 °C for 90 s, exposed with the implant block reticle, post-exposure baked at 115 °C for 60 s, and developed with 2.38 wt% TMAH at 23 °C in a 45 s static puddle. The patterned resist is then subjected to ion implantation at doses from 5×1013 ions/cm² to 5×1014 ions/cm², after which the wafer is carbonized selectively in the implanted areas. Failure signatures on production lines include edge popping at the resist–silicon interface when implantation beam current exceeds 10 μA/cm², resist thickness loss above 15% at the mask edge, and incomplete ash removal when the implant dose exceeds 5×1014 ions/cm² because the cross-linked surface is resistant to oxygen plasma.
Compliance for this segment references SEMI S2-0820 for ion implanter and track safety interlocks, ISO 9001:2015 for lot traceability and process change control, REACH Regulation (EC) No 1907/2006 for resist and solvent registration, and RoHS Directive 2011/65/EU for restricted substances in the final device. The terminal product is the self-aligned source/drain or extension implant mask removed by two-step O2/CF4 plasma ashing followed by wet strip; the mask is not removed by solvent-only processing because the ion-rich surface layer is insoluble in conventional PGMEA-based removers.
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JSR AR5370 is a positive-tone chemically amplified photoresist formulated for 193 nm argon fluoride immersion lithography. The material belongs to the JSR AR-series ArF immersion resist portfolio and is intended for 300 mm wafer processing in logic and memory manufacturing, particularly where half-pitch falls below 45 nm. JSR Corporation supplies the product as a solvent-borne casting solution under confidential technology transfer documentation; public datasheet values are limited. For this reason, the following description identifies the chemistry, process integration envelope, and class-level comparative data while flagging where AR5370-specific numerical limits must be obtained from the supplier certificate of analysis or application qualification report.
The resist belongs to the methacrylate/norbornene alicyclic resist class. Aromatic resins used in 248 nm KrF systems are unsuitable at 193 nm because the aromatic ring absorbs strongly and reduces vertical sidewall contrast. In chemically amplified ArF systems, exposure generates a photoacid that catalyzes deprotection of acid-labile pendant groups during post-exposure bake. Deprotected regions become soluble in 2.38 wt% tetramethylammonium hydroxide developer. The immersion-grade formulation constrains low-molecular-weight photoacid generator migration and is designed to operate with a 1.35 numerical aperture scanner and ultrapure water in the final lens-to-wafer gap.
On a 300 mm coater/developer track, AR5370-class ArF immersion resists are typically dispensed through a point-of-use fluoropolymer filter with retention rating of 0.01 μm to 0.05 μm. Coating thickness is set by spin speed and solids content; after post-apply bake and ellipsometric measurement, single-layer thickness commonly falls between 80 nm and 150 nm. Representative post-apply bake temperatures for this resist class are 90 °C to 110 °C for 60 s, while post-exposure bake temperatures are typically 100 °C to 115 °C for 60 s. Development is carried out with 2.38 wt% TMAH aqueous developer in a puddle or multi-spray process lasting 30 s to 60 s. These ranges are class-typical starting conditions, not certified AR5370 specifications.
Track compatibility includes closed-cover processing on TEL Lithius ProZ, TEL Clean Track ACT12, or equivalent 300 mm systems. Exposure is performed on 193 nm immersion scanners with a numerical aperture of 1.35, such as ASML TWINSCAN NXT:1950i or NXT:1980i. Coating defects from incomplete edge-bead removal and backside contamination are monitored by optical wafer edge inspection and are minimized by maintaining cleanroom particle control in accordance with ISO 14644-1:2015 for the scanner–track interface zone. Critical dimension verification is typically performed by top-down CD-SEM; the CD-SEM calibration procedure must account for resist shrinkage and charging.
Post-apply bake uniformity across the wafer requires hotplate temperature stability of at least ±1 °C within the closed process cup. Post-exposure bake is the primary thermal step controlling acid diffusion and deprotection extent; the dose-to-size and critical dimension response to PEB temperature must be characterized using a Bossung plot. A change of PEB temperature of 1 °C can shift critical dimension by 1 nm to 5 nm for this class of chemically amplified photoresist, depending on feature type and pitch. Product-specific PEB sensitivity data for AR5370 should be generated on the intended scanner and track combination.
Development uniformity is influenced by developer puddle size, wafer rotation speed, and exhaust balance in the developer cup. For 300 mm wafers, puddle coverage must extend to the bevel without meniscus break. A multi-spray develop step before puddle formation can improve radial CD uniformity by reducing surface wetting delay. Rinse with deionized water at 22 °C to 25 °C and spin dry with controlled final spin speed reduce watermark defects. Because AR5370 is an immersion resist, the final rinse step may include a surfactant-containing rinse to lower capillary stress on high-aspect-ratio features; compatibility with the topcoat and developer must be verified.
In immersion lithography, photoacid leaching from the resist into ultrapure water changes surface inhibition and critical dimension uniformity. ArF immersion formulations of this class reduce low-molecular-weight photoacid generator migration or are used with a topcoat. For AR5370, users must verify whether the process uses an embedded topcoat or a separate topcoat; published data for AR5370-specific leach rates, refractive index at 193 nm and 633 nm, and extraction rates are limited outside JSR application reports. Contact angle, dark film loss after ultrapure water immersion, and post-exposure delay latitude are therefore qualification variables rather than datasheet constants.
Production-scale ArF immersion processing of this class exhibits defect modes including microbridging, blob defects at the wafer edge, and line collapse caused by capillary forces during final rinse. These failure modes are aggravated by topcoat non-uniformity, incomplete post-rinse drying, and inhomogeneous development at the wafer bevel. The processing boundary is set more by immersion-specific defect control than by bulk resist contrast alone. When AR5370 is qualified for a specific layer, wafers should be inspected after development using broadband optical defect inspection and after pattern transfer using e-beam inspection; defect classification distinguishes resist residue from embedded particles.
Immersion water management at the scanner stage also imposes constraints on resist surface contact angle. A low receding contact angle can leave residual water droplets that cause watermark defects; an excessively high advancing contact angle can destabilize the immersion meniscus during wafer scan. Typical immersion resists are formulated with fluorinated or siloxane surface-active components to balance these properties, but AR5370-specific contact angle values must be measured using a commercial goniometer on film samples prepared under production conditions.
The defining compositional difference between AR5370 and 248 nm KrF resists is the elimination of aromatic resin. Aromatic rings have high absorbance at 193 nm, so ArF systems use methacrylate/norbornene copolymers with pendant alicyclic groups. This substitution reduces optical density but alters etch resistance and developer solubility. Compared with early 193 nm dry resists, immersion-grade materials for 1.35 numerical aperture exposure often reduce photoacid diffusion length to improve line-edge roughness and decrease free photoacid generator content to limit water extraction. The table below summarizes class-level comparisons; the AR5370 column identifies requirements that must be confirmed through fab-specific qualification or JSR application data.
| Parameter | KrF positive-tone | ArF dry positive-tone | ArF immersion / AR5370 class | EUV positive-tone |
|---|---|---|---|---|
| Exposure wavelength | 248 nm | 193 nm | 193 nm | 13.5 nm |
| Resin chemistry | Poly(4-hydroxystyrene) | Methacrylate/alicyclic | Low-leach methacrylate/norbornene | Poly(hydroxystyrene) or metal-oxide |
| Single-layer thickness | 300–800 nm | 150–300 nm | 80–150 nm | 20–50 nm |
| Critical limitation | Post-exposure delay stability | Low absorbance at 193 nm | Photoacid leaching and water defectivity | Photon shot noise and film absorptivity |
During pattern transfer, the alicyclic methacrylate backbone of AR5370-class ArF resists provides higher carbon density than non-alicyclic acrylate systems. Halogen-based plasma etching of low-k dielectrics and silicon-containing anti-reflective coatings imposes a minimum resist thickness to maintain mask integrity. At 80 nm to 150 nm single-layer thickness, the aspect ratio at 45 nm half-pitch is approximately 1.8 to 3.3. The limiting pattern collapse margin is controlled by rinse liquid surface tension; lower-surface-tension rinse solutions are used where aspect ratio exceeds 2.5. Published AR5370-specific collapse data should be obtained from supplier qualification studies. The resist is not intended for direct EUV exposure at 13.5 nm; its photon absorption and outgassing behavior under vacuum are not part of the ArF immersion application envelope.
| Document or control | Regulation or standard | Required content |
|---|---|---|
| Safety Data Sheet | CLP Regulation (EC) No 1272/2008 | Hazard classification, storage, disposal |
| REACH conformity | Regulation (EC) No 1907/2006 | Registration status, SVHC list |
| Cleanroom particle class | ISO 14644-1:2015 | Applicable zone around dispense and track |
| Equipment safety interface | SEMI S2 | Track and scanner interoperability |
Rework processes for ArF immersion resists of this class rely on organic solvent stripping or plasma ashing. The AR5370 film is soluble in common photoresist thinners based on propylene glycol monomethyl ether acetate or ethyl lactate before post-exposure bake; after deprotection and development, removal is usually performed with oxygen-based plasma or commercial liquid strippers. Solvent compatibility with the silicon-containing anti-reflective coating and spin-on carbon underlayer must be confirmed on the production stack, because a stripper that attacks the underlayer can create residue and adhesion failure.
Amine contamination from wafer cassettes, sealants, or track components can neutralize the photoacid and alter critical dimension. Sealed cassettes, chemical air filtration, and amine-free sealants are required in the resist handling area. The resistance to airborne molecular contaminants is quantified by post-exposure delay tests; wafers exposed but left in an amine-contaminated environment show surface insoluble layer formation and CD drift. For AR5370, the maximum allowable post-exposure delay time must be determined on the production track and may be significantly shorter than for KrF resists because of the sensitivity of the ArF photoacid system.
Storage of AR5370 should follow JSR label conditions; typical ArF resist storage is 5 °C to 25 °C in original fluoropolymer or high-density polyethylene containers, protected from ultraviolet light. Bath temperature cycling and repeated partial dispensing from bulk canisters should be avoided to prevent settlement and viscosity drift. Filtration at dispense with 0.01 μm to 0.05 μm fluoropolymer filters reduces particulate defects. Safety and environmental handling follow SDS hazard communication and applicable obligations under Regulation (EC) No 1907/2006 and Regulation (EC) No 1272/2008.
No AR5370 qualification should be finalized without wafer-level reliability data from the intended etch and ash integration. Residue from incomplete resist removal can cause contact opens and subsequent metal deposition defects. Production qualification includes a split-lot comparison with the previous reference resist, with baseline target values for line-width roughness, local critical dimension uniformity, defect density, etch bias, and post-ash residue. Published multi-lot AR5370 manufacturing consistency data are limited; fab-specific incoming quality control should include viscosity and water content measurement using batch-release documentation from JSR.
