| HS Code | 902127 |
| Chemical Name | Acetone (Electronic/EL Grade) |
| Cas Number | 67-64-1 |
| Chemical Formula | CH3COCH3 |
| Molecular Weight | 58.08 g/mol |
| Purity | ≥99.5% |
| Assay | ≥99.5% (GC) |
| Water Content | ≤100 ppm |
| Evaporation Residue | ≤2 ppm |
| Boiling Point | 56.1 °C at 760 mmHg |
| Density | 0.790 g/cm3 at 20 °C |
| Acidity Or Alkalinity | ≤0.001 meq/g |
| Appearance | Clear, colorless liquid |
| Color Pt Co | ≤10 |
| Solubility In Water | Miscible |
As an accredited Acetone Electronic/EL Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in 1-liter amber glass bottles with PTFE-lined closures, nitrogen-blanked for purity. Quantity: 1 L per bottle. |
| Container Loading (20′ FCL) | 20′ FCL shipment of Electronic/EL Grade Acetone, packed in sealed drums/IBCs, properly secured and ventilated for safe transport. |
| Shipping | Acetone Electronic/EL Grade is a high-purity, highly flammable liquid classified as UN1090, Class 3. Ship in properly grounded, sealed containers with hazardous material labeling. Avoid heat, sparks, and oxidizers. Transport via approved carriers in ventilated vehicles, following all applicable dangerous goods regulations. |
| Storage | Acetone Electronic/EL Grade must be stored in tightly sealed, compatible containers (stainless steel or approved HDPE) in a cool, dry, well-ventilated area. Keep away from heat, flames, sparks, and strong oxidizers. Protect from moisture and contamination to maintain high purity. Use proper grounding and bonding, and follow local flammable liquid storage regulations. |
| Shelf Life | Shelf life is typically 24 months from manufacture when stored sealed, cool, dry, and away from light. |
On 300 mm front-end-of-line post-etch residue removal lines, electronic-grade acetone is dispensed from pressure canisters through 0.05 µm PTFE membrane cartridges into single-wafer spin processors operating at platen speeds of 1200–2400 rpm. The solvent is blended with electronic-grade isopropyl alcohol at a volume ratio between 70:30 and 50:50 to reduce surface-tension gradients on copper/low-κ dual-damascene features below 40 nm line pitch. The acetone fraction in the blend is controlled to ±2 vol% because deviations above 75 vol% have been observed on wet-bench lines to raise static charge accumulation during spin-off and to increase pattern collapse on high-aspect-ratio trenches. Water content is held below 0.3 wt% by Karl Fischer titration measured per ASTM E1064-16; higher water loadings promote copper oxide formation at the cobalt barrier/copper interface and reduce the solubility of post-ash organometallic residues. The liquid is applied for 10–20 s at 800 rpm, followed by a 1500–2000 rpm rinse, then a 2500–3000 rpm dry cycle with 0.5–1.0 L/min heated nitrogen at 60–70°C. Terminal devices include advanced logic and stacked-die memory wafers processed in sub-5 nm nodes. Acceptance sampling follows ASTM D329-07 Type I for assay, with individual trace metals required at or below 10 ppb by ICP-MS and sodium, potassium, calcium, iron, copper and zinc reported on certificate of analysis. The wet bench itself is constructed from electropolished 316L stainless steel, with PTFE and PVDF wetted surfaces; elastomeric seals are limited to perfluoroelastomer grades because acetone swells EPDM and nitrile seals above 5% linear swell. Process ventilation must maintain a face velocity of at least 100 ft/min because the flash point of acetone is -17°C and the lower explosive limit is 2.5% in air.
In a bilayer lift-off stack for GaAs pseudomorphic high-electron-mobility transistor gates or MEMS microbridge release structures, a polydimethylglutarimide or poly(methyl methacrylate) underlayer is deliberately selected so that acetone swelling produces the undercut required for clean metal removal. Acetone is used neat rather than blended because dilution with isopropyl alcohol below 80 vol% reduces the dissolution rate of the lift-off layer to less than 50 nm/min at 21°C, extending immersion times and increasing the probability of metal redeposition. The bath is held at 18–22°C in quartz or PTFE-lined tanks equipped with megasonic transducers operating at 40–60 kHz and 0.5–1.0 W/cm² acoustic density. Wafers are immersed for 60–180 s, flushed with ultrapure water, and then transferred through a two-stage isopropyl alcohol rinse to prevent water spotting. Because the lift-off layer is usually poly(methyl methacrylate)-based, the acetone must be free of low-volatility plasticizers and oligomeric impurities that would remain on the gate metal after solvent evaporation; residue after evaporation is specified at ≤5 ppm per ASTM D1353-13. Particles larger than 0.2 µm are limited to fewer than 10 particles/mL to avoid gate-source shorts. Open acetone baths are blanketed with dry nitrogen when cleanroom relative humidity exceeds 60%, because water uptake can raise the bath water above 0.3 wt% within 4 h in an unlidded tank. Acetone is not used on negative-tone or cross-linked resists because such films do not swell sufficiently for lift-off; acid- or plasma-based stripping is required instead. The terminal products are discrete GaAs or GaN high-frequency transistors and surface-micromachined MEMS cantilevers, where source-drain spacing may be below 0.25 µm.
Gen 8.5 thin-film-transistor glass substrates moving through a flat-panel lithography line are cleaned with electronic-grade acetone after abrasive-free cerium oxide polishing and before indium tin oxide sputter deposition. The cleaning module delivers the solvent through a 0.1 µm polypropylene depth filter at a pressure of 0.15–0.25 MPa to oscillating brush scrubbers with polyvinyl alcohol bristles; the scrubber head speed is 300–500 rpm and the substrate transport speed is 2–4 m/min. Acetone is blended with deionized water at 5–15 vol% because higher concentrations have been observed on production lines to leave visible striations on color filter black matrix surfaces due to non-uniform evaporation. The solution is used at 22–25°C; heating above 30°C increases vapor release above the scrubber enclosure’s lower flammable limit and requires additional local exhaust ventilation. Polycarbonate viewing windows in the scrubber enclosure are not permitted because acetone stress-crazes polycarbonate at low service strain. After scrubbing, the glass passes through a two-stage cascade rinse with 18 MΩ·cm deionized water at 25°C and an air-knife drying zone with filtered nitrogen. Surface cleanliness is verified by contact angle ≤5° on bare glass and by water contact-angle hysteresis ≤3°, while residual organic contamination is measured by time-of-flight secondary ion mass spectrometry on witness coupons. The output is a 2200 × 2500 mm Gen 8.5 sheet that proceeds to indium tin oxide or IGZO sputter deposition for liquid-crystal or OLED backplanes. Compliance is tied to ISO 14644-1:2015 Class 4 cleanroom operation and to supplier metal impurity specifications of ≤50 ppb per mobile ion because sodium and potassium migration creates threshold voltage shifts in thin-film transistors.
Printed wiring board fabrication lines use electronic-grade acetone for post-microetch rinsing and for cleaning of solder mask exposure tools and stencils. In sequential lamination of high-density interconnect boards, a spray module applies a 5–10 vol% acetone/deionized water mixture at 35–40°C through fan nozzles at 0.1–0.3 MPa to remove sodium persulfate microetch residues and anti-foam carryover from copper traces before brown oxide adhesion promotion. The bath conductivity is maintained below 5 µS/cm, and the chloride ceiling is 200 ppb; higher chloride concentrations correlate with electromigration failures during biased humidity testing at 85°C/85% RH per IPC specifications. The same solvent grade may be used in under-stencil wipe rolls on surface-mount assembly lines to remove lead-free solder paste residues from laser-cut stencils without leaving nonvolatile material that can occlude apertures below 0.1 mm in diameter. Wipe velocity is set between 20 and 60 mm/s with an acetone dose of 0.02–0.05 mL per wipe cycle; the paper-fabric wipe is replaced after 50 cycles to avoid redeposition of tin-silver-copper particles. Acetone spray modules are segregated from alkaline permanganate desmear lines, and local exhaust is interlocked with lower explosive limit sensors set at 25%. Ionic cleanliness of finished printed circuit board assemblies is verified using IPC-TM-650 method 2.3.25 with a pass threshold of 1.56 µg/cm² sodium chloride equivalence. The terminal articles include multilayer HDI smartphone main boards and automotive LED driver boards where electrochemical migration must be prevented under 100 V bias.
| Application context | Acetone concentration | Operating temperature | Contact time | Critical analytical limit |
|---|---|---|---|---|
| FEOL post-etch rinse | 50–70 vol% in IPA | 20–25°C | 10–20 s | Water ≤0.3 wt% per ASTM E1064-16 |
| Bi-layer lift-off bath | Neat | 18–22°C | 60–180 s | Residue ≤5 ppm per ASTM D1353-13 |
| Display substrate scrub | 5–15 vol% in deionized water | 22–25°C | 10–30 s brush contact | Mobile metals ≤50 ppb |
| MEMS release rinse | Neat final step | 18–20°C | 30–60 s per step | Water ≤0.5 wt% final tank |
Following sacrificial oxide removal in 49% hydrofluoric acid vapor, silicon proof masses in MEMS accelerometer and gyroscope release processes move through a sequence of 50:50 water/acetone, neat acetone, and then isopropyl alcohol to reduce capillary forces that cause stiction of high-aspect-ratio comb fingers. The acetone bath is held at 18–20°C and filtered through 0.05 µm polytetrafluoroethylene membranes; contact time is 30–60 s per step. The water content of the neat acetone tank is monitored by Karl Fischer and kept below 0.5 wt%, because water in the final acetone step increases tip adhesion after alcohol exchange. Vapor extraction of 100–150 ft/min is required at tank surface due to the flash point of -17°C. After drying, comb-drive resonance quality factor is measured; stiction failure is defined as a shift greater than 5% in drive-mode resonance frequency. The process uses acetone only for released devices without photoresist; if organic mask material is present, the acetone step would swell the mask and distort critical dimensions. Devices include three-axis inertial sensors and microbolometers, and the acceptance criteria are written into release travelers referencing supplier certificates of analysis for residue ≤5 ppm and particles larger than 0.2 µm fewer than 10 particles/mL. Published data for this specific configuration is limited outside high-aspect-ratio inertial MEMS lines, so each release step is requalified when the solvent source changes.
Residue verification in cleanroom analytical laboratories uses electronic-grade acetone for the final rinse of glassware, PTFE beakers, and polypropylene sample bottles that will be used for trace metal or ion chromatography of silicon wafer, process bath, and wipe extracts. The solvent is dispensed from pressurized vessels through 0.1 µm filters and allowed to contact the article for 20–30 s, followed by two rinses with 18 MΩ·cm deionized water and drying under a filtered nitrogen manifold. Acetone concentration is not reduced below 95 vol% in this final rinse because lower ketone fractions leave insufficient wetting on fluoropolymer surfaces. Cleanliness is verified by inductively coupled plasma mass spectrometry of a blank extract, with acceptance of ≤5 ppb per element for sodium, potassium, aluminum, iron, copper, and zinc. This cleaning step supports the preparation of sample vials used in ion chromatography and gas chromatography–mass spectrometry of wafer cleaning baths; the acetone itself must meet ASTM D329-07 Type I and a residue limit of ≤5 ppm. Analytical use does not extend to samples containing strong oxidizers, concentrated nitric acid, or strong bases because acetone forms heat-sensitive adducts and polymerization by-products under these conditions. The terminal output is not a coated or assembled device, but the qualified analytical vessel set used to certify front-end cleaning baths and post-etch rinse solutions in semiconductor fabs.
Competitive Acetone Electronic/EL Grade prices that fit your budget—flexible terms and customized quotes for every order.
For samples, pricing, or more information, please contact us at +8615365186327 or mail to admin@ascent-chem.com.
We will respond to you as soon as possible.
Tel: +8615365186327
Email: admin@ascent-chem.com
Flexible payment, competitive price, premium service - Inquire now!
Acetone Electronic/EL Grade (CAS 67-64-1, CH3COCH3) is a controlled low-residue solvent supplied for semiconductor, photomask, flat-panel display, and precision electronic cleaning operations where ionic and particulate contamination must be minimized. The product is packaged in 1-gallon fluorinated high-density polyethylene containers, 5-gallon fluoropolymer pails, 200 L drums, or 1000 L intermediate bulk containers with PFA liners after final circulation through 0.05 μm absolute filters. Representative certificate-of-analysis values include assay by GC-FID ≥99.8 wt%, water by ASTM D1364 ≤0.10 wt%, nonvolatile residue by ASTM D1353 ≤5 ppm, acidity as acetic acid by ASTM D1613 ≤0.0002 meq/g, and individual sodium, potassium, calcium, iron, and copper by ICP-MS ≤5 ppb.
The product is dispensed as a cleaning and rinsing solvent for silicon wafers, quartz photomasks, display glass substrates, and printed circuit assemblies. In immersion cleaning of photomasks, the solvent is applied at 20–25°C to remove organic residue, resist particles, and surface contamination before pellicle mounting. Because acetone is miscible with water and displays a surface tension of 23.1 mN/m at 20°C, it wets narrow mask features but leaves a rapidly evaporating surface that may require a downstream isopropyl alcohol rinse or heated nitrogen dry step to prevent water condensation. For printed circuit assemblies, extraction under IPC-TM-650 2.3.25 is commonly evaluated against the 1.56 μg/cm² NaCl equivalence criterion after solvent cleaning.
Technical-grade acetone is typically produced as a coproduct of phenol via cumene hydroperoxide cleavage and may contain diacetone alcohol, mesityl oxide, aldehydes, higher-boiling aromatics, and water. Reagent-grade acetone reduces oxidizable impurity content but does not consistently control particle count or individual metal ion concentrations. Electronic/EL grade applies additional polishing and cleanroom filtration to reduce mobile ions that can cause threshold-voltage instability in transistor structures. The following comparison reflects representative supplier certificates of analysis; values for a specific lot depend upon packaging, storage duration, dispense hardware, and the analytical methods applied.
| Parameter | Test Method | Electronic/EL Grade | ACS Reagent | Technical Grade |
|---|---|---|---|---|
| Assay | GC-FID | ≥99.8 wt% | ≥99.5 wt% | ≥99.0 wt% |
| Water | ASTM D1364 | ≤0.10 wt% | ≤0.30 wt% | ≤0.50 wt% |
| Nonvolatile residue | ASTM D1353 | ≤5 ppm | ≤20 ppm | ≤100 ppm |
| Acidity as acetic acid | ASTM D1613 | ≤0.0002 meq/g | ≤0.0005 meq/g | ≤0.001 meq/g |
| Critical metals Na, K, Ca, Fe, Cu | ICP-MS | ≤5 ppb each | not specified | not controlled |
| Particles ≥0.2 μm | Optical particle counter | ≤50 particles/mL | not specified | not controlled |
For assay, GC-FID uses split injection on a polyethylene glycol stationary phase column with 0.25–0.53 mm internal diameter and reports individual impurities at a 0.005 wt% threshold. Water is determined by coulometric Karl Fischer titration per ASTM D1364. Nonvolatile residue is measured by evaporation of 100 mL sample in a platinum dish at 105°C per ASTM D1353. ICP-MS multielement analysis after sample preconcentration provides the trace-metal profile. The difference between Electronic/EL grade and technical grade is therefore not only lower water but also controlled removal of residue-forming impurities that remain after solvent evaporation.
The higher-boiling impurities in technical-grade acetone can act as hydrocarbon residues on wafer surfaces after drying. Mesityl oxide and diacetone alcohol form by aldol condensation during the phenol process and their concentrations track with water and acid levels. In Electronic/EL grade, oligomer content is reduced by a final distillation cut that excludes low-boiling aldehydes and high-boiling condensation products. This cut is monitored by gas chromatography with flame ionization detection using internal standard quantitation. Typical reporting thresholds for individual impurities are 0.005 wt%.
In a production track, the solvent is delivered from a remote cleanroom cabinet through 1/4-inch or 3/8-inch PFA lines with point-of-use 0.02 μm cartridge filters. Recirculation flow rates are set between 10 and 25 L/min per dispense head to avoid static charge accumulation and particle resuspension. The cleaning chamber is maintained with filtered air or nitrogen at 45–55% relative humidity; lower humidity reduces water adsorption but increases static charge on quartz surfaces. If water content in the solvent exceeds 0.10 wt%, the risk of water spotting on hydrophilic silicon dioxide increases when the wafer is withdrawn directly from the solvent without a low-water intermediate rinse. Published data for this specific configuration is limited, but the water specification is treated as a process boundary rather than a bulk-quality convenience.
Batch-to-batch variance in metal content is controlled by tanker and drum sampling at the filling line. Each container lot is sampled after 24 h stabilization and tested for water, acidity, residue, and particle counts. Filling rooms are operated at ISO Class 5 cleanliness per ISO 14644-1; containers are purged with filtered nitrogen before filling. The nitrogen purge reduces atmospheric carbon dioxide and water uptake but does not remove nonvolatile residues already present on container interior surfaces.
The processing window for acetone cleaning of hydrophilic silicon oxide is narrow. If the wafer is withdrawn at 23°C and 50% RH, evaporative cooling lowers the surface temperature to approximately 10–12°C; the dew point of the surrounding air is about 12°C under those conditions. This places the surface at the condensation boundary. A reduction in booth dew point to 5°C or an increase in air temperature to 25°C shifts the margin, but low humidity increases static adhesion of particles. Acceptable water content in the solvent therefore interacts with cleanroom dew point, wafer withdrawal speed, and exhaust velocity.
In high-volume wafer fabs, acetone is often paired with an isopropyl alcohol or deionized water rinse because acetone evaporation is approximately 5.6 relative to n-butyl acetate. A standing pool of acetone on a wafer can cool the surface by evaporative heat removal and reduce the local temperature below the dew point of the surrounding cleanroom air. This creates water condensation and particle adhesion if the exhaust flow is below 0.3 m/s. Recirculating hoods with HEPA/ULPA filtration and 0.35–0.45 m/s face velocity are common on manual cleaning stations.
For removal of rosin flux from printed circuit assemblies, immersion at 23–30°C for 5–10 minutes followed by a 10–15 minute deionized water rinse reduces ionizable surface contamination when the solvent is replenished at a rate of 0.5–1.0 bed volumes per day. Acetone Electronic/EL Grade is compatible with FR-4 laminate and most solder masks in short-duration contact; compatibility should be confirmed for polyimide coverlay and acrylic conformal coating. The solvent is not recommended for unrinsed contact with polycarbonate, acrylic, ABS, natural rubber, EPDM, or neoprene, which can swell or craze.
At the ≤5 ppb individual metal specification, extraction from wetted materials becomes the limiting variable. Wetted surfaces are specified as high-purity PFA, PTFE, FFKM, or electropolished 316L stainless steel with surface finish below 0.5 μm Ra. Borosilicate glass containers are used only for smaller packages because sodium and calcium extraction from glass can occur over storage periods longer than 90 days. Point-of-use filtration at 0.02 μm with PTFE membranes removes shedding from pump diaphragms and valve seats. A differential pressure increase above 0.7 bar across the filter indicates particle loading or batch contamination and triggers filter replacement. Pump materials containing polyvinyl chloride, polyurethane, or Buna-N are excluded from contact because plasticizer extraction raises nonvolatile residue and compromises the ≤5 ppm limit.
When switching from technical-grade acetone to Electronic/EL Grade, the line should first be flushed with 3–5 system volumes of electronic-grade material after mechanical cleaning of the sump. Legacy residue in transfer lines defeats the particle and metals specification if it is not removed. Reported field evaluations on stainless steel dispensing systems indicate that sodium and potassium recovery can remain above 1 ppb for several days after the first fill if the system was previously used with technical solvent. Published data for this specific configuration is limited, but the effect is assigned to ion adsorption on oxide films in unpassivated stainless steel tubing.
Acetone Electronic/EL Grade has a density of 0.790–0.793 g/cm³ at 20°C by ASTM D4052, a boiling range of 56.0–56.5°C by ASTM D1078, and a flash point of -17°C closed cup by ASTM D56. The vapor pressure at 20°C is approximately 24.6 kPa, requiring explosion-proof electrical classification in dispensing rooms and 10 air changes per hour minimum ventilation for open containers. The material is not suitable for vapor degreasing in open equipment; closed-loop equipment with inert gas blanketing is required where prolonged liquid contact with heated surfaces is specified.
Compared with HPLC-grade acetone, the Electronic/EL grade places tighter limits on nonvolatile residue and particles, but not necessarily on UV-absorbing impurities, because the electronics application is not driven by UV cutoff. Conversely, HPLC-grade acetone is not necessarily filtered or packaged to maintain ≤50 particles/mL at 0.2 μm. Compared with semiconductor-grade isopropyl alcohol, acetone offers higher solvency for non-polar residues and faster evaporation, but it is less compatible with some elastomers and has a lower flash point. A replacement should be validated by cleaning efficiency tests on the specific residue because acetone can redeposit dissolved oils if the rinse step is omitted.
Acetone Electronic/EL Grade is classified under GHS H225 as highly flammable liquid and vapor and under H319 for eye irritation. Storage areas should follow NFPA 30 for flammable liquids; containers must be grounded and bonded during transfer. The product is not photochemically reactive in standard EU RoHS compliance assessment but must be managed as a volatile organic compound under local emission rules. Waste streams containing acetone are not drain-disposed; closed collection with explosion-proof receivers is required.
