| HS Code | 913358 |
| Purity | ≥99.5% |
| Softening Point | 85–115 °C |
| Glass Transition Temperature | 45–70 °C |
| Number Average Molecular Weight | 500–900 g/mol |
| Weight Average Molecular Weight | 800–1,500 g/mol |
| Viscosity At 200 C | 200–600 mPa·s |
| Acid Value | ≤0.1 mg KOH/g |
| Bromine Number | ≤0.5 g Br2/100 g |
| Gardner Color | ≤1 |
| Ash Content | ≤30 ppm |
| Volatile Content | ≤0.1 wt% |
| Chlorine Content | ≤5 ppm |
| Metal Impurities Na Fe Mg | ≤1 ppm each |
| Moisture Content | ≤0.05 wt% |
| Dielectric Constant At 1 Mhz | ≤2.4 |
| Dissipation Factor At 1 Mhz | ≤0.001 |
As an accredited High-Purity Hydrocarbon Resin for ABF Semiconductor Packaging factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in 25 kg nitrogen-purged, sealed drums to maintain high purity for ABF semiconductor applications. |
| Container Loading (20′ FCL) | High-purity hydrocarbon resin for ABF packaging, loaded into 20-foot FCL, palletized, secured, with ventilation and moisture protection. |
| Shipping | Ship as High-Purity Hydrocarbon Resin (non-hazardous, non-DG). Pack in sealed moisture-barrier bags inside fiber drums or FIBC. Store away from heat, ignition sources, and incompatible oxidizers. Label as industrial chemical for semiconductor use. Transport via standard dry van or container, protected from moisture and contamination. Documentation: SDS, COA, and shipping manifest. |
| Storage | Store in a cool, dry, well-ventilated area away from heat, open flames, and direct sunlight. Keep container tightly sealed to prevent moisture absorption and contamination. Avoid exposure to oxidizing agents. Maintain stable temperature and low humidity, and follow semiconductor-grade handling procedures to preserve purity. |
| Shelf Life | Shelf life is typically 24 months from manufacture when stored sealed in original container under recommended conditions. |
In film converting lines producing dry ABF-class dielectric layers, the high-purity hydrocarbon resin is introduced as a hydrophobic modifier in the organic phase of a ketone-based varnish system. The incoming resin is pre-dissolved at 30–40 wt% solids in methyl ethyl ketone or cyclohexanone and filtered through 0.5 µm polypropylene depth filters before entering the main mixing vessel, because undispersed high-molecular-weight gel fractions will translate into coating defects on a slot-die lip and later into microvia bottom residues. The formulated varnish is coated onto a 38–50 µm PET carrier using a slot-die coater with lip gap 100–180 µm and line speed 4–12 m/min; three-zone air-flotation drying is staged from 70°C to 150°C, and residual solvent is held below 1.0 wt% by headspace gas chromatography. Viscosity at 25°C is maintained between 3000 mPa·s and 8000 mPa·s; below this range slot-die ribbing appears, while above this range air entrainment generates pinholes in the dried film. The hydrocarbon resin addition is maintained between 10 wt% and 25 wt% of total organic solids in the final dielectric layer; below 10 wt%, the reduction in moisture absorption and dissipation factor is too small to justify the formulation cost, while above 25 wt%, cured film elongation drops and slitting-induced edge cracking becomes a recurring coating-line rejection mode. Compliance on these converting lines is anchored to IEC 61249-2-21:2003 halogen-free criteria and to IPC-TM-650 2.6.2.1 for water absorption, while high-frequency electricals are screened by IPC-TM-650 2.5.5.13. The terminal product type is an uncured build-up dielectric dry film roll subsequently laminated and cured on IC substrate lines; it is not a finished semiconductor package.
| Compliance parameter | Method or standard | Acceptance window used on film converting lines |
|---|---|---|
| Halogen content | IEC 61249-2-21:2003 | Cl ≤ 900 ppm, Br ≤ 900 ppm, total halogen ≤ 1500 ppm |
| Water absorption after 24 h immersion | IPC-TM-650 2.6.2.1 | ≤ 0.30 wt% |
| Dielectric constant at 10 GHz | IPC-TM-650 2.5.5.13 | ≤ 3.0 |
| Dissipation factor at 10 GHz | IPC-TM-650 2.5.5.13 | ≤ 0.003 |
| Copper peel strength after thermal stress | IPC-TM-650 2.4.8 | ≥ 0.35 N/mm |
When a high-layer-count flip-chip ball grid array (FC-BGA) panel enters the vacuum laminator, the hydrocarbon-modified build-up dielectric must flow sufficiently to fill trace gaps, yet retain enough interfacial adhesion to survive downstream thermal excursions. Production vacuum laminators apply a pre-bond stage at 85–100°C under 0.3–0.5 MPa for 30–60 s to remove air, then a main cure at 180–200°C under 0.7–1.0 MPa for 60–90 min. The hydrocarbon resin has lower surface energy than the epoxy phase and can migrate toward the copper foil or plated copper surface during the melt-flow window; this migration is beneficial for lowering interfacial moisture uptake but harmful when the addition ratio exceeds 20 wt% of total organic solids, because copper peel strength after thermal stress measured per IPC-TM-650 2.4.8 falls below 0.35 N/mm on some core materials. In qualification runs for server-processor substrates, the organic phase is therefore held at 12–20 wt% hydrocarbon resin, with the balance comprising epoxy resin, phenolic hardener, and a low-molecular-weight elastomer. Below 12 wt%, the dielectric loss reduction is insufficient for high-speed differential pairs operating above 28 Gbps; above 20 wt%, post-lamination voids may appear at the edge of large 100 mm × 100 mm package sites where panel temperature gradients are greatest. Warpage measurements on 510 mm × 406 mm panels after cure show that formulations above 20 wt% hydrocarbon resin also exhibit a larger room-temperature bow, which complicates laser via drilling focus and reduces via-bottom energy density. After lamination, the panel moves through 355 nm UV laser via drilling with top-hat beam shaping, via diameters of 40–70 µm, alkaline permanganate desmear, electroless copper seeding, and semi-additive plating with copper thickness 15–25 µm. Compliance is verified against IPC-6012 Class 3 for plated through-hole and microvia reliability and against JEDEC J-STD-020 moisture sensitivity level tests. The terminal product type is an FC-BGA substrate with 8–20 build-up layers, used in high-performance computing processors, network switches, and server central processing units.
Coreless FC-CSP substrate lines processing mobile application processors force the hydrocarbon resin addition to a lower range than in large-body server packages because the cured dielectric must survive repeated bending and handling of thin panels without chip-side warpage. The organic phase in these build-up films is typically compounded with 5 wt% to 15 wt% hydrocarbon resin relative to total organic solids; the lower boundary preserves the adhesion of the first build-up layer to a temporary core carrier, while the upper boundary prevents delamination at the die edge during package singulation. Vacuum lamination on 510 mm × 406 mm coreless carriers uses a cure temperature of 190°C for 60 min, followed by 355 nm UV laser drilling with via diameters of 30–45 µm. After desmear and electroless copper seeding, semi-additive plating deposits 12–18 µm copper traces with line/space dimensions down to 10 µm/10 µm in the high-density escape region. Ionic cleanliness is monitored by IPC-TM-650 2.3.25 and maintained below 1.6 µg NaCl equivalent/cm² after the desmear-neutralization sequence, because mobile ions from the dielectric phase are a known source of electrochemical migration in fine-pitch mobile packages. Compliance for the substrate body follows IPC-6012 Class 2 or Class 3 depending on end-use reliability requirements, with JEDEC J-STD-020 MSL3 preconditioning applied before package assembly. The terminal product type is a coreless FC-CSP substrate with 2–4 build-up layers and package body sizes from 5 mm × 5 mm to 15 mm × 15 mm, assembled into smartphone application processors, baseband processors, and compact system-in-package modules.
In horizontal permanganate desmear lines, the interaction between alkaline potassium permanganate and the hydrocarbon phase determines whether a laser via bottom will plate reliably. Alkaline potassium permanganate must generate sufficient micro-roughness on the via bottom for electroless copper adhesion, but the hydrogenated hydrocarbon phase is largely resistant to permanganate oxidation. Production desmear baths are operated at 60–80 g/L KMnO4, 40–50 g/L NaOH, and 70–80°C for 8–15 min; the epoxy phase is selectively oxidized to a microporous surface, while hydrocarbon-rich domains remain smooth. When the hydrocarbon resin addition exceeds 18 wt% of total organic solids, the via-bottom roughness measured by atomic force microscopy after desmear falls below 50 nm Ra, and subsequent electroless copper seed coverage becomes non-uniform; when the addition is below 12 wt%, the dissipation factor after cure increases beyond 0.003 at 10 GHz in split-post dielectric resonator testing per IPC-TM-650 2.5.5.13. The stable formulation window for high-layer-count substrates is therefore 12–18 wt% hydrocarbon resin. Desmear lines employ ultrasonic agitation at 25–40 kHz and cascade rinse tanks with deionized water resistivity greater than 18 MΩ·cm; any reduction in rinse quality leaves permanganate residues that later manifest as voids under electrolytic copper plating. Peel strength after electroless copper deposition is verified by IPC-TM-650 2.4.8 and should remain above 0.35 N/mm after thermal cycling; values below this threshold correlate with field failures in high-current power delivery structures of large server chips. The terminal product type is a high-layer-count FC-BGA substrate with laser vias of 40–60 µm, used in AI accelerator packages, high-speed network ASICs, and graphics processor modules. Operational boundaries are explicit: the dielectric must not be combined with amine-based additives during varnish preparation, because amine acceleration of the epoxy cure shortens the desmear contrast window and increases the risk of resin smear remaining at via bottoms.
An antenna-in-package substrate carrying 28 GHz and 39 GHz phased array traces places a distinct constraint on the organic dielectric phase, because moisture uptake after MSL3 conditioning directly raises dissipation factor and degrades beamforming gain. In this application, the high-purity hydrocarbon resin is loaded at 20–35 wt% of the total organic solids, a higher range than in mobile FC-CSP but lower than the percolation threshold observed in early development builds where copper peel strength collapsed below 0.30 N/mm after desmear. The dielectric is processed on coreless panels through vacuum lamination at 190–200°C, UV laser via drilling, alkaline permanganate desmear, and semi-additive copper plating with controlled impedance geometries; trace width tolerance is held to ±10% on 50 Ω single-ended and 100 Ω differential lines. Dielectric constant and dissipation factor are extracted from microstrip ring resonator structures at 28 GHz, while moisture absorption after 24 h immersion is checked per IPC-TM-650 2.6.2.1 to remain below 0.25 wt%. Compliance for the substrate body follows IPC-6012 Class 3 microvia reliability, and the assembled antenna-in-package module is subjected to JEDEC J-STD-020 MSL3 preconditioning before surface-mount reflow. Published data for this specific configuration is limited, particularly for the interaction between hydrocarbon resin content and 28 GHz phase stability, so each formulation must be verified on the actual substrate stack-up rather than inferred from 10 GHz dielectric data. The terminal product type is an antenna-in-package substrate with 2–6 build-up layers used in 5G millimetre-wave modules, phased array transceivers, and fixed wireless access customer-premises equipment.
Because automotive ADAS processor substrates are qualified at 150°C for 1000 h and thermal cycled from -55°C to 125°C for 1000 cycles, any phase separation or interfacial oxidation that would be invisible in consumer qualification becomes a rejection criterion. The hydrocarbon resin content is restricted to 10–18 wt% of total organic solids in the build-up dielectric; above 18 wt%, edge cracking at the die attach pad and solder mask opening was observed on production FC-BGA panels after thermal aging, while below 10 wt%, moisture absorption after 85°C/85% RH conditioning rises above 0.30 wt%. The production process begins with vacuum lamination at 190°C and 0.8 MPa for 90 min, followed by 355 nm laser via drilling, permanganate desmear, electroless copper seeding, semi-additive plating, and deposit of a low-outgassing solder mask. Surface finishes are ENIG or ENEPIG with nickel at 3–6 µm, palladium at 0.05–0.1 µm, and immersion gold at 0.03–0.1 µm, because wire-bond and solder joint reliability after 1000 h at 150°C depends on the integrity of the nickel barrier. Compliance is verified through IPC-6012 Class 3, JEDEC JESD22-A104 thermal cycling condition C, JEDEC J-STD-020 MSL3, and the AEC-Q100 Grade 1 package-level reliability environment used by automotive tier-one qualification. The terminal product type is an automotive-grade FC-BGA or thermally enhanced BGA substrate for ADAS domain controllers, radar signal processors, lidar processing units, and infotainment head-end modules. A specific handling limitation is enforced: when storage relative humidity exceeds 65%, the dry film must be kept in nitrogen-purged cabinets and allowed to reach room temperature before vacuum lamination, otherwise absorbed moisture volatilizes during cure and creates microvoids at the copper-dielectric interface.
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High-purity hydrocarbon resin grade HCR-ABF-300 is formulated for build-up dielectric layers in advanced ABF semiconductor packaging, specifically for semi-additive process and modified semi-additive process substrates that must maintain low transmission loss at 28 GHz and 60 GHz. The product is supplied as a filtered solution in propylene glycol monomethyl ether acetate and butyl acetate at 35–40 wt% solids, with a maximum particle count of 0.5 particles/mL at a detection threshold of 0.5 μm by liquid particle counting. The resin backbone is a hydrogenated dicyclopentadiene/vinyl aromatic copolymer with a weight-average molecular weight of 8,000–12,000 g/mol and a polydispersity index between 2.0 and 2.6, determined by gel permeation chromatography. Total extractable ionic contamination is specified at ≤5 mg/kg by ion chromatography using IPC-TM-650 2.3.28.1; chloride and sulfate are each held below 2 mg/kg. Residual unsaturation after hydrogenation is ≤0.20 mmol/g by iodometric titration. Curing proceeds by addition polymerization of norbornene-type side groups rather than condensation, so no water is released during lamination cure.
On production-scale coating equipment, HCR-ABF-300 has been coated on 18 μm and 25 μm polyethylene terephthalate carrier film by slot-die and comma-roll methods. Wet film thickness is set between 70 μm and 110 μm to yield a dry dielectric thickness of 25–40 μm after 90 °C for 8–10 min. Residual solvent before lamination must be ≤1.0 wt%; retained PGMEA above 1.5 wt% creates interfacial voids during vacuum lamination and is a known failure mode on 600 mm × 600 mm diaphragm-type vacuum laminators. Vacuum lamination onto roughened copper is conducted at 85–115 °C and 0.5–0.8 MPa for 60–90 s. The lamination process window is limited to ±5 °C because the resin begins to advance above 120 °C; the resulting increase in yield stress prevents adequate fill of copper traces with line/space dimensions below 10/10 μm. Steady-shear viscosity at 25 °C is 1,200–2,400 mPa·s at 20 s−1 by cone-and-plate rheometry per ISO 3219.
The cured resin is typically laminated and thermally advanced in nitrogen at 190 °C for 120 min, followed by 220 °C for 30 min as a post-cure. Under these conditions, the crosslinked matrix reaches the representative values shown in Table 1. The data are generated on free-standing films with a thickness of 40 ± 5 μm and are not specification limits.
| Property | Test method | Condition | Representative value |
|---|---|---|---|
| Dielectric constant Dk at 10 GHz | IPC-TM-650 2.5.5.13 | 23 °C, 50% RH | 2.65 ± 0.05 |
| Dissipation factor Df at 10 GHz | IPC-TM-650 2.5.5.13 | 23 °C, 50% RH | 0.0025 ± 0.0005 |
| Glass transition temperature Tg | TMA, 10 °C/min | −40 °C to 250 °C | 185 ± 5 °C |
| Coefficient of thermal expansion α1 | ASTM E831-19 | −40 °C to 25 °C | 38 ppm/K |
| Coefficient of thermal expansion α2 | ASTM E831-19 | 150 °C to 200 °C | 110 ppm/K |
| Tensile strength | ASTM D638-14 | 23 °C, 5 mm/min | 72 MPa |
| Elongation at break | ASTM D638-14 | 23 °C, 5 mm/min | 4.2% |
| Young’s modulus | ASTM D638-14 | 23 °C | 3.1 GPa |
| Water absorption | ASTM D570-98 | 24 h, 23 °C | 0.12 wt% |
| 5% mass-loss temperature | TGA, 10 °C/min, nitrogen | 30 °C to 500 °C | 405 °C |
The low moisture absorption of 0.12 wt% is relevant for package warpage control and for maintenance of Df after 168 h of 85 °C/85% RH biased humidity aging. Published data for this specific configuration is limited, but available results indicate a Df shift of less than 0.0003 at 10 GHz after moisture exposure.
The product differs from conventional C5/C9 tackifier resins and non-hydrogenated dicyclopentadiene resins by the removal of polar stabilizers, rosin soaps, fatty acid esters, and phosphite antioxidants. Those additives lower melt viscosity in non-electronic applications, but in ABF dielectrics they increase ionic extractables and dielectric loss. HCR-ABF-300 is therefore filtered through 0.2 μm absolute filters before packaging in fluoropolymer-lined drums. Sodium, iron, chromium, nickel, and copper are each controlled to ≤1 mg/kg by closed-vessel acid digestion and ICP-MS.
The lower Df of HCR-ABF-300 arises from the absence of polar ester, ether, and hydroxyl groups in the cured network. Epoxy systems derive bulk adhesion from secondary bonding between hydroxyl groups and copper oxide, but those same groups increase dipole relaxation and moisture uptake. The hydrocarbon resin replaces polar adhesion with topographic anchoring after desmear, which is sufficient for signal lines but not for high-stress microvia redistribution layers without a silane coupling agent and surface roughening. The modulus of 3.1 GPa is lower than typical epoxy ABF films; therefore, HCR-ABF-300 is not recommended for packages with die-to-substrate CTE mismatch exceeding 4 ppm/K unless a core stiffener or balanced layup is used.
| Parameter | HCR-ABF-300 | Conventional epoxy ABF | Cyanate ester/BMI ABF |
|---|---|---|---|
| Dk at 10 GHz | 2.65 | 3.5–3.8 | 2.8–3.2 |
| Df at 10 GHz | 0.0025 | 0.025–0.030 | 0.005–0.010 |
| Moisture absorption | 0.12 wt% | 1.0–2.5 wt% | 0.5–1.0 wt% |
| Young’s modulus | 3.1 GPa | 4.0–5.0 GPa | 3.8–4.5 GPa |
| Copper peel strength after desmear | 0.55–0.70 N/mm | 0.80–1.00 N/mm | 0.70–0.90 N/mm |
| Glass transition temperature Tg | 185 °C | 180–220 °C | 220–260 °C |
| Thermal decomposition onset | 405 °C | 360–390 °C | 400–430 °C |
Cyanate ester and bismaleimide systems provide higher glass transition temperatures than HCR-ABF-300, but their dissipation factors are typically three to five times higher and their moisture uptake is greater. Epoxy systems offer stronger copper adhesion and higher modulus, but their dielectric loss and hygroscopic swelling limit their usefulness in high-frequency packages. HCR-ABF-300 occupies a position between these material families: it provides the lowest Df and moisture absorption of the three, with a modulus and copper peel strength that must be compensated by substrate design.
Blind vias with a top diameter of 40 μm and a bottom diameter of 28 μm are formed using a 355 nm UV laser at a fluence of 0.8–1.2 J/cm². The hydrocarbon matrix produces a carbon-rich smear layer that is less polar than epoxy smear. Desmear in 60 g/L potassium permanganate at 80 °C for 8–12 min removes the smear and produces a surface roughness Ra of 0.30–0.50 μm. Weight loss during desmear is controlled to 1.2–1.8 wt%; excessive weight loss above 2.0 wt% creates undercut at the via bottom and reduces copper peel strength. Because the resin has no hydrolyzable ester groups, permanganate attack is slower than on epoxy, but the process window is correspondingly narrow. Post-desmear neutralization with 10 wt% sulfuric acid at 45 °C for 3 min is required to remove manganese residues before electroless copper. Alternatively, argon/hydrogen plasma at 100 W for 60 s may be used before electroless copper, but published data for this specific configuration is limited.
Copper adhesion after electroless copper deposition is controlled by topographic anchoring. Peel strength on smooth copper after chemical cleaning is below 0.2 N/mm; after desmear at Ra 0.30–0.50 μm, peel strength reaches 0.55–0.70 N/mm per IPC-TM-650 2.4.8. This is lower than epoxy ABF films at equivalent roughness but remains sufficient for redistribution layers and ball pads in RF packages. For chip-last panel-level packaging on 600 mm × 600 mm panels, thickness control across a panel is specified at ±3 μm; batch-to-batch viscosity variation is held below ±8% to maintain slit-die thickness uniformity. The resin is not compatible with amine-based additives or imidazole accelerators because these compounds induce premature crosslinking during solvent drying and reduce storage stability at 25 °C to less than 72 h.
Reliability screening at package level is conducted by thermal cycling from −55 °C to 125 °C per JEDEC JESD22-A104, with through-via resistance change below 10% after 1,000 cycles. Biased highly accelerated stress testing at 130 °C and 85% RH for 96 h is used to detect interconnect degradation under bias; published data for this specific configuration is limited but indicates that the low moisture absorption of the hydrocarbon matrix reduces electrochemical migration at 5 V bias when comb patterns are spaced at 25 μm. Unopened containers are stored at 5 °C for up to 6 months; the product should not be held above 25 °C beyond 72 h before coating. Compliance with REACH Regulation (EC) No 1907/2006 and RoHS Directive 2011/65/EU Annex II is maintained; halogen content by combustion ion chromatography is below 50 mg/kg per IEC 61249-2-21.