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HS Code |
742604 |
| Chemical Formula | Zn3As2 |
| Molar Mass | 386.09 g/mol |
| Appearance | Grayish-black solid |
| Density | 5.36 g/cm³ |
| Melting Point | 1120 °C |
| Crystal Structure | Tetragonal |
| Band Gap | 1.0-1.1 eV (indirect) |
| Solubility In Water | Insoluble |
| Thermal Conductivity | 17 W/m·K |
| Cas Number | 12006-40-9 |
As an accredited Zinc Arsenide factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Zinc Arsenide, 100 grams, is supplied in a tightly sealed amber glass bottle with hazard labeling, inside a protective cardboard box. |
| Shipping | Zinc Arsenide should be shipped in tightly sealed containers, clearly labeled, and protected from moisture. Transport it according to local and international hazardous material regulations, including proper documentation and handling precautions. Ensure segregation from incompatible substances and store in a cool, dry, well-ventilated area to prevent decomposition or accidental exposure. |
| Storage | Zinc arsenide should be stored in a tightly sealed container, in a cool, dry, and well-ventilated area away from moisture, acids, and incompatible substances. It must be clearly labeled as toxic and hazardous. Storage areas should be secure and restricted to trained personnel, with appropriate safety measures such as spill containment and access to protective equipment. |
Applications of Zinc Arsenide in Industrial ManufacturingZinc arsenide serves as a specialized compound in niche high-tech sectors, where its unique semiconductor and material properties enable critical advances in electronic device fabrication and optoelectronics. As the manufacturer, we supply zinc arsenide to qualified partners focusing on precise, controlled, and standards-driven process environments. Below we outline key industrial application scenarios, relevant compliance requirements, and technical integration details. 1. III-V Semiconductor Wafer ManufacturingZinc arsenide acts as a foundational precursor in the epitaxial growth of III-V semiconductors, especially for infrared optoelectronic devices. Wafer fabs incorporate this material during molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE), leveraging its stable crystal lattice and electronic characteristics to fabricate detector layers and active region materials for laser diodes and photodetectors. Manufacturers must control impurity levels, arsenic vapor pressures, and layer stoichiometry to meet stringent performance and reliability specifications in IR imaging and sensor devices intended for aerospace and advanced measurement applications. Industry compliance standards
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2. Photovoltaic Research and Infrared Photodetector PrototypingIn advanced materials research labs, zinc arsenide features as a target material in the synthesis of novel multi-junction solar cells and custom IR photodetector structures. Its bandgap and carrier mobility allow for the engineering of device regions with tailored absorption spectra, essential for prototype testing and new technology validation. Researchers must adhere to strict laboratory safety and nanofabrication protocols, ensuring compatibility with downstream device encapsulation and functional testing. Industry compliance standards
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3. Sputtering Target Production for Specialty Thin FilmsZinc arsenide is formulated into sputtering targets essential for producing alloyed thin films with specific optoelectronic behaviors, especially in research and pilot-line manufacturing. Sputtering targets, once sintered, deliver controlled vapor-phase stoichiometry for uniform deposition on substrates, enabling the fabrication of device layers in advanced detector and optoelectronic systems. Requirements for purity, particle size, and mechanical integrity are closely monitored to ensure process reliability and film quality. Industry compliance standards
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4. Infrared Optical Coating DepositionAdvanced optics manufacturers source zinc arsenide for its suitability in infrared-transmitting coatings and antireflective layers applied to BaF2, ZnSe, and other IR transparent substrates. The control over absorption edge and refractive index in the final coating enables optimization of optical transmission for laser optics, IR spectroscopy windows, and sensor domes. Processes require strict environmental and chemical controls, as well as precise documentation for traceability. Industry compliance standards
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Every batch of Zinc Arsenide we produce in our facility reflects years of investment in research, skilled handling, and a firm approach to environmental responsibility. This compound has carved out an essential role in semiconductor and optoelectronic industries because its electrical and structural properties allow for applications beyond what zinc or arsenic-based materials achieve alone. Experiments in our plant, day in and day out, reveal the subtlety required to maintain purity during synthesis, as Zinc Arsenide’s performance in real-world devices depends on consistent stoichiometry and crystalline structure. On our lines, rigorous control at each stage, from raw material selection to final inspection, enables us to deliver material that meets the expectations of both research labs and production environments.
We produce Zinc Arsenide in the Zn3As2 form, which maintains a precise ratio of the base elements for improved device reliability. Our standard product comes as dark gray or black crystalline powder or larger crystalline fragments, depending on downstream requirements. By optimizing melt procedures, we achieve high density and controlled particle size, which influence how uniformly the material behaves in vapor phase and bulk applications. Physical assessment—grain boundary integrity, consistency of internal structure, freedom from oxide inclusions—takes place on every consignment. This kind of hands-on characterization, backed by traceable in-house analytics, lets us spot potential weaknesses long before the customer does.
Many challenges in semiconductor fabrication start with contaminants at the raw material stage. Trace oxygen or undesired metallics in Zinc Arsenide can distort conductivity, especially at the nano-scale. We include extensive pre-reaction cleaning and closed-system transfers throughout production. Our refining sequence—distillation of elemental zinc, careful weighing and combination in inert atmospheres, staged cooling to allow for controlled crystallization—removes much of the variation seen in commercial Zinc Arsenide. Every lot is measured for trace impurities using inductively coupled plasma mass spectrometry and checked for phase purity by X-ray diffraction. Our team has learned that slack practices at this stage show up months later in lost device yield for our customers.
Zinc Arsenide earns its place in the toolbox of those working on infrared detectors, photovoltaic cells, and specific types of laser diodes. Its bandgap properties—intermediate between those of elemental zinc and arsenic—make it suitable for absorption and emission in wavelength windows where silicon, gallium arsenide, or indium phosphide fall short. We supply material both to major equipment manufacturers and to research universities pushing boundaries in photonics. Zinc Arsenide’s electron mobility, paired with its relatively stable crystalline nature, allows for device architectures that demand not only rapid switching but also steady long-term performance. Our feedback loop draws on field failures and customer insights so that process refinement never stops.
Years spent making Zinc Arsenide at scale teach lessons not found in technical handbooks. One of the biggest headaches early on came from thermal gradients during cooling, which trigger cracking and inhomogeneity inside the ingot. Our machinists experimented with new insulation and slow temperature ramps, cutting the defect rate by half in a few quarters. Consistency of elemental sourcing proved another critical factor: we now favor specific suppliers for high-purity zinc and arsenic, shaping contracts around documented contaminant profiles. Cleanroom upgrades paid dividends, cutting down on airborne particulate infiltration that not only marred surface finish but also degraded subsequent wafer processing. These continuous improvements arise from operators, lab techs, and engineers sharing what works and what creates problems. Mistakes cost money—and, more importantly, risk customer trust.
Compared with more common semiconductors such as silicon or gallium arsenide, Zinc Arsenide delivers distinct performance in mid-infrared optical systems. Its bandgap of around 1.0 electron volts places it in a region useful for both emission and photovoltaic capture below the cut-off of most Group III-V materials. Unlike zinc selenide or telluride, the arsenide offers better chemical stability during device fabrication, resisting atmospheric degradation that complicates storage and handling. While gallium arsenide leads in high-frequency electronics, Zinc Arsenide excels in specialist optoelectronic devices and can serve as a base for mixed compounds when custom tuning of electrical characteristics is needed. Each material has its zone—real-world device choice often depends on a compromise between cost, availability, and operational requirements. Zinc Arsenide isn’t a blanket replacement, but in certain scenarios, it drives increased efficiency or allows for form factors others cannot deliver.
Developers looking to build photodetectors or solar cells for specialty bands have found that Zinc Arsenide’s intermediate bandgap reduces noise and increases sensitivity under conditions where other materials struggle with leakage currents or photon losses. Device manufacturers have come to us for material that supports stable junction formation, especially for dual-junction architectures where one layer relies on Zinc Arsenide and another layer, such as cadmium telluride or indium phosphide, bridges into adjacent frequency space. During ongoing collaborations, our technical team hears firsthand reports: steep improvements in detectivity, better yields in wafer processing, or enhanced device lifetimes under cycling. Research projects aimed at longer-wavelength data transmission leverage the transparency window available to Zinc Arsenide—even small defects or off-stoichiometric batches can impact transmission losses, so batch authentication has become central to our quality program.
Zinc Arsenide demands careful handling throughout its life, not just in our plant. It’s not as easy to machine or etch as silicon or gallium arsenide, and its dust presents health risks, as one would expect from its elemental constituents. In our own plant, we rely on closed hoppers, glovebox transfers, and high-efficiency extraction during all unit operations. Employees receive medical monitoring, and process protocols emphasize not only equipment life but operator health. Downstream users often call us for guidance on storage, typically seeking strategies to prevent oxidation or arsenic sublimation. Unlike more robust semiconductors, Zinc Arsenide cannot tolerate open air for extended periods; we provide packaging specifically designed to limit ingress of moisture and air. Shipping regulations mean our logistics team deals directly with authorities ensuring compliance. Every safety measure is grounded in the knowledge that trust builds over years but unravels in a moment if negligence creeps in.
Many inquiries arrive from engineering groups who need to prototype new sensor platforms. They want a supplier who understands the time pressures in development—delays in batch supply or specification mismatches can throw off project milestones. Our production scheduling favors responsiveness. Feedback loops direct us to tweak milling times, modify sieving steps, or alter cooling rates if a customer flags an unexpected material response under their specific process conditions. Our laboratory maintains a standing inventory of reference materials so new customers see identical characteristics as long-term partners. This open approach to technical support and sample matching fosters stronger partnerships. In recent years, we’ve worked with pilot-scale device lines looking at CMOS compatibility, requiring not only material purity but also low-defect density across large crystalline forms. For these customers, our technical leads share practical information, not jargon: annotated cross-sections, post-growth annealing recommendations, troubleshooting suggestions informed by years of plant-floor experience.
Regulation grows stricter each year, especially when it comes to elements like arsenic. Our plant no longer relies on legacy waste handling or generic exhaust, instead opting for recovery loops that capture volatile compounds prior to incineration. Waste streams get pre-treated before release, and independent auditors review our disposal logs. We trace each drum of arsenic-bearing material from arrival until it exits the premises, with operators trained to document every transition. Air discharges are scrubbed, and effluent water is tested at regular intervals against standards more rigorous than national law. This vigilance lets us sleep at night knowing our processes align with current environmental science and public expectations. Internally, we balance productivity targets with energy use, often holding off on late-shift melts during high-demand periods to lighten grid load and carbon output. The same philosophy that governs our approach to occupational safety shapes our approach to planetary health.
The pace of innovation in photonics, quantum computing, and alternative energy applications ensures that no production process stays static for long. We rely on communications from users in adjacent technologies: what works in their world often signals an avenue for our own process advances. Technical exchanges happen both in person—factory visits, customer audits, technical summits—and over secure digital channels. We open up our batch data so that end-users see traceability back to the start. New device projects sometimes call for tailored modifications, such as modified particle distribution or alternate surface treatments to suit specific thin-film deposition techniques. Our in-house team pursues pilot runs before scaling—reducing risk and building data that informs broader production. It’s not a matter of restating what the market already does; if we can find a way to improve device outcomes or make fabrication easier for our customers, that pursuit becomes part of our manufacturing DNA.
Engineers with experience in both research and high-volume production know that material choice goes beyond lowest purchase price. Many optoelectronic solutions default to gallium arsenide, indium phosphide, or silicon-based materials due to supply chain familiarity and production experience. Zinc Arsenide enters the equation for those facing specific challenges: lack of performance in the mid-infrared range, instability in layered heterojunctions, or device lifetime issues when exposed to routine environmental stressors. Several of our long-term clients pivoted to Zinc Arsenide after exhausting more conventional routes, sharing data that revealed measurable uplift in device efficiency and a reduction in performance drift after extended aging. While challenges remain—supply security of arsenic, specialized handling infrastructure—teams that overcome these hurdles find themselves equipped to build better sensors, detectors, and energy capture systems.
Requests for training have grown over the past decade, influenced by the rise of university-industry consortia and collaborative research networks. Our technical staff conducts seminars for new and existing customers covering topics those outside the plant rarely see: the impact of minor zinc-to-arsenic ratio shifts, signs of surface contamination, storage protocols, and what to do if a processing incident occurs. The next generation of device developers should understand the implications of each production step; we open up our production records in a controlled way, showing not just the “what” but the “how and why.” We avoid glossing over risks—Zinc Arsenide requires respect and adherence to best practices, whether in our plant or during customer downstream integration. This ethos flows through training modules, field troubleshooting, and feedback sessions that guide both teams toward robust device outcomes.
Bottlenecks in production cascade outwards, impacting new technology launches and ongoing manufacturing. We work directly with international freight partners who understand the sensitivity and regulatory context of arsenic-bearing compounds, offering direct tracking and responsive updates. Our in-house logistics crew—trained on chemical regulations and documentation—works tirelessly to package and dispatch orders to minimize dwell time and maximize material stability. In times of global disruption, we prioritize core accounts but build safety stock against swings in market demand. This approach rewards long-standing clients with secure access and consistent material properties, reducing the risk of unplanned downtime. Lead times are clearly communicated and rarely change once a purchase order is in place. Long-haul delivery teams check climate controls at each leg, using temperature monitors and seal checks that trace back to dispatch. All these efforts speak to one goal: uninterrupted flow of Zinc Arsenide from our plant to your process line.
The future for Zinc Arsenide extends beyond photonics and high-precision sensing. Collaborations with advanced computing groups have prompted process changes in our facility—demand for ultra-thin layered crystals, new doping regimes, or hybrid integration with silicon photonics. These tasks stretch our plant and our laboratory, driving new investments in analytic capability and high-purity feedstock logistics. Our workforce—spanning seasoned chemical operators to early-career material scientists—shares a commitment to delivering what customers imagine today, not just what past specifications required. The link between current production and emerging application insight keeps us at the forefront, building trust with those who expect more from their materials partner.
At every stage, from initial raw material purchase through to customer delivery, the commitments we make are lived out on the production floor. Quality assurance officers walk the line daily, reviewing both instrumentation outputs and physical samples. Adjustments happen based on experience, not bureaucracy—on-site staff solve problems in real time, learning from both successes and mistakes. Employees at every function contribute suggestions that feed directly into changes in our protocols, whether it’s PPE upgrades, a tweak in batch scheduling, or a new approach to waste capture. Each Zinc Arsenide batch reaching our customers carries the collective experience and pride of people who know their work matters to the broader technical community. Those who partner with us gain more than material—they secure a link to dependable production expertise and a willingness to collaborate on new frontiers.